公开(公告)号：US5086015A

公开(公告)日：1992-02-04

申请号：US394364

申请日：1989-08-15

申请人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Mikio Hongo

发明人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Mikio Hongo

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/76802 ,  Y10S148/046

摘要： A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning operation by a voltage applied to a deflection electrode; forming a first hole in the semiconductor device by the focused ion beam to a depth capable of reaching an insulating film formed between upper and lower wiring conductors so that the first hole has a curved bottom corresponding to the undulation of the upper wiring conductor, and the upper wiring conductor is absent at the bottom of the first hole; and scanning a portion of the bottom of the first hole with the focused ion beam to form a second hole in the insulating film to a depth capable of reaching the lower wiring conductor, thereby preventing the shorting between the upper and lower wiring conductors. Further, a method of forming a hole of a predetermined shape at a surface area having a step-like portion of a semiconductor device by an ion beam is disclosed which method comprises a pre-etching step of scanning the high-level region of the step-like portion with the ion beam so that the high-level region becomes equal in level to the low-level region of the step-like portion, and a main step of scanning the whole of the surface area with the ion beam till the hole of the predetermined shape is formed in the semiconductor device.

摘要翻译： 公开了一种通过离子束蚀刻具有多层布线的半导体器件的方法，该方法包括以下步骤：从高密度离子源提取高强度离子束; 聚焦提取的离子束; 使聚焦离子束通过施加到偏转电极的电压进行扫描操作; 通过所述聚焦离子束在所述半导体器件中形成第一孔至能够到达形成在上部和下部布线导体之间的绝缘膜的深度，使得所述第一孔具有对应于所述上部布线导体的起伏的弯曲底部，并且 上部布线导体在第一个孔的底部不存在; 并用聚焦离子束扫描第一孔的底部的一部分，以在绝缘膜中形成能够到达下布线导体的深度的第二孔，从而防止上布线导体和下布线导体之间的短路。 此外，公开了一种通过离子束在具有半导体器件的阶梯状部分的表面区域形成预定形状的孔的方法，该方法包括：扫描步骤的高级区域的预蚀刻步骤 具有离子束的部分，使得高级区域变得与阶梯状部分的低级区域相等，并且主要步骤是用离子束扫描整个表面积直到孔 在半导体器件中形成预定形状。

公开(公告)号：US5026664A

公开(公告)日：1991-06-25

申请号：US334145

申请日：1989-04-06

申请人： Mikio Hongo ,  Katsuro Mizukoshi ,  Shuzo Sano ,  Takashi Kamimura ,  Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi

发明人： Mikio Hongo ,  Katsuro Mizukoshi ,  Shuzo Sano ,  Takashi Kamimura ,  Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76838 ,  H01L21/32051 ,  H01L21/76892 ,  Y10S148/093

摘要： A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for disconnection for the purpose of evaluation of the characteristics of the device. The additional conduction path is formed by forming a hole in the passivation layer to expose a part of the conductor layer, directing, in an atmosphere containing a metal compound gas, an ion beam onto the hole and onto a predetermined portion of the passivation layer on which the additional conduction path of a pattern is to be formed to thereby form a patterned film of the metal decomposed from the metal compound gas and forming an additional conductor on the patterned film. The provision of the additional conduction path and/or the removal of part of the patterned conductor layer is preformed in a chemical vapor deposition apparatus which includes a vacuum chamber and an ion beam radiation unit having a housing partitioned into, for example, first, second and third compartments. The ion beam radiation unit has an ion source placed in the first compartment, an ion beam focusing and deflecting device placed in the second compartment and pressure buffer constituted by the third compartment. The third compartment is coupled to and pneumatically isolated from the vacuum chamber for conducting an ion beam emitted from the ion source, passing the second compartment and ejected from the second compartment to the vacuum chamber.

摘要翻译： 具有衬底，用于衬底中的区域的互连的图案化导体层和覆盖该器件的钝化层的半导体IC器件被设置有去除图案和/或图案化导体层的一部分的附加传导路径用于断开 评估设备特点的目的。 附加传导路径是通过在钝化层中形成一个孔而露出导体层的一部分而形成的，该导体层的一部分在包含金属化合物气体的气氛中引导离子束到孔上并延伸到钝化层的预定部分上 其形成图案的附加传导路径，从而形成从金属化合物气体分解的金属的图案化膜，并在图案化膜上形成附加导体。 提供额外的传导路径和/或去除图案化的导体层的一部分在化学气相沉积设备中预先形成，该化学气相沉积设备包括真空室和离子束辐射单元，该单元具有被分隔成例如第一，第二 和第三个隔间。 离子束辐射单元具有放置在第一隔室中的离子源，放置在第二隔室中的离子束聚焦和偏转装置以及由第三隔间构成的压力缓冲器。 第三隔室与真空室联接并气动隔离，用于传导从离子源发射的离子束，通过第二隔室并从第二隔室喷射到真空室。

公开(公告)号：US06753253B1

公开(公告)日：2004-06-22

申请号：US07584180

申请日：1990-09-18

申请人： Takahiko Takahashi ,  Fumikazu Itoh ,  Akira Shimase ,  Mikio Hongo ,  Satoshi Haraichi ,  Hiroshi Yamaguchi

发明人： Takahiko Takahashi ,  Fumikazu Itoh ,  Akira Shimase ,  Mikio Hongo ,  Satoshi Haraichi ,  Hiroshi Yamaguchi

IPC分类号： H01L2144

CPC分类号： H01L23/544 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/30466 ,  H01J2237/31749 ,  H01L21/32051 ,  H01L21/768 ,  H01L21/76879 ,  H01L21/76888 ,  H01L21/76892 ,  H01L21/76894 ,  H01L22/22 ,  H01L23/525 ,  H01L23/5254 ,  H01L23/552 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05554 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01065 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1204 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y10S438/94 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

摘要： Herein disclosed are a variety of techniques relating to the wiring and logic corrections on a chip by making use of the focused ion beam (which is shortly referred to as “FIB”) or the laser selection metal CVD. The time periods for the wiring corrections and for debugging and developing an electronic system are shortened by making use of the processing characteristics of the FIB. Illustratively, a hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. The inside of the hole and a predetermined region on the insulating film are irradiated with either a laser beam or an ion beam in a metal compound gas to deposit metal in the hole and on said region and a connecting wiring is formed by means of optically pumped CVD. The present invention also relates to an IC or VLSI structure having a trial cutting region, at test etching region and an auxiliary wiring or pad, suitable for the application of such defect correction and circuit change, as well as a method of making same, a designing method using such technique, and a focused ion beam system and other systems for use in those methods.

摘要翻译： 这里公开了通过利用聚焦离子束（其被简称为“FIB”）或激光选择金属CVD与芯片上的布线和逻辑校正有关的各种技术。 通过利用FIB的处理特性，缩短布线校正和调试开发电子系统的时间。 示例性地，在通过聚焦离子束连接到另一布线的布线的一部分上方的绝缘膜中钻孔。 在绝缘膜的内部和绝缘膜上的预定区域用金属化合物气体中的激光束或离子束照射以在孔中和所述区域上沉积金属，并且通过光泵浦形成连接布线 CVD。 本发明还涉及一种IC或VLSI结构，其具有在测试蚀刻区域处的试验切割区域和适于应用这种缺陷校正和电路改变的辅助布线或焊盘，以及其制造方法 使用这种技术的设计方法，以及用于这些方法的聚焦离子束系统和其它系统。

公开(公告)号：US5497034A

公开(公告)日：1996-03-05

申请号：US318267

申请日：1994-10-05

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40 ,  H01L29/46

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

公开(公告)号：US4868068A

公开(公告)日：1989-09-19

申请号：US32753

申请日：1987-03-31

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而沉积在孔的表面上的区域和互连孔的区域，以形成导电金属膜， 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

公开(公告)号：US5683547A

公开(公告)日：1997-11-04

申请号：US273780

申请日：1994-07-12

申请人： Junzou Azuma ,  Fumikazu Itoh ,  Satoshi Haraichi ,  Akira Shimase ,  Junichi Mori ,  Takahiko Takahashi ,  Emiko Uda

发明人： Junzou Azuma ,  Fumikazu Itoh ,  Satoshi Haraichi ,  Akira Shimase ,  Junichi Mori ,  Takahiko Takahashi ,  Emiko Uda

IPC分类号： H01J37/305 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/30

CPC分类号： H01L21/76892 ,  H01J37/3056 ,  H01L21/32136 ,  H01L21/76879 ,  H01J2237/006 ,  H01J2237/31744

摘要： A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching gas, a mixed gas different in composition from any conventional one is employed and the gas is uniformly supplied to an etching area and at least one of the components of such a mixed gas is a spontaneous reactive gas for use in etching the sample spontaneously and isotropically. With this arrangement, it is possible to subject to local etching a material for which the local etching has been impossible to provide since a single etching gas causes a reaction too fierce or causes almost nearly no reaction.

摘要翻译： 一种处理方法和装置，其特征在于，在蚀刻气体气氛中，通过用离子束或电子束等聚焦能量束照射样品，使用聚焦能量束进行聚焦能量束照射区域的局部能量束处理。 作为蚀刻气体，使用与常规方法不同组成的混合气体，并将气体均匀地供给到蚀刻区域，并且这种混合气体的至少一个成分是用于蚀刻样品的自发反应气体 自发和各向同性。 通过这种布置，由于单一蚀刻气体引起反应太剧烈或几乎几乎不发生反应，因此可以局部蚀刻局部蚀刻不可能提供的材料。

公开(公告)号：US5824598A

公开(公告)日：1998-10-20

申请号：US561310

申请日：1995-11-21

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而在孔的表面上沉积的区域和互连孔的区域，以形成将导电金属膜电连接 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

公开(公告)号：US5472507A

公开(公告)日：1995-12-05

申请号：US238888

申请日：1994-05-06

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40 ,  C23C16/00

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而在孔的表面上沉积的区域和互连孔的区域，以形成将导电金属膜电连接 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

公开(公告)号：US4900695A

公开(公告)日：1990-02-13

申请号：US134460

申请日：1987-12-17

申请人： Takahiko Takahashi ,  Funikazu Itoh ,  Akira Shimase ,  HIroshi Yamaguchi ,  Mikio Hongo ,  Satoshi Haraichi

发明人： Takahiko Takahashi ,  Funikazu Itoh ,  Akira Shimase ,  HIroshi Yamaguchi ,  Mikio Hongo ,  Satoshi Haraichi

IPC分类号： H01L21/66 ,  H01L21/768 ,  H01L23/525

CPC分类号： H01L22/22 ,  H01L21/768 ,  H01L21/76879 ,  H01L21/76888 ,  H01L21/76892 ,  H01L21/76894 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/14 ,  Y10S438/94

摘要： The present invention relates to a semiconductor integrated circuit device and a process for producing the same. A hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. The inside of the hole and a predetermined region on the insulating film are irradiated with either a laser beam or an ion beam in a metal compound gas to deposit metal in the hole and on said region and a connecting wiring is formed by means of optically pumped CVD. To electrically connect upper- and lower-level wirings in a multilayer wiring structure by a connecting wiring, the connecting wiring is electrically isolated from an intermediate-level wiring through which it extends. The above-described arrangement enables provision of a hole with a focused ion beam and formation of a metal wiring on a selective region by means, for example, optically pumped CVD. Accordingly, it is possible to effect fine machining and electrically connect together wirings inside an LSI after the completion thereof. It is therefore possible to carry out debugging, repair and a defect analysis of the LSI.

摘要翻译： 半导体集成电路装置及其制造方法技术领域本发明涉及半导体集成电路装置及其制造方法。 在通过聚焦离子束连接到另一布线的布线的一部分上方的绝缘膜中钻孔。 在绝缘膜的内部和绝缘膜上的预定区域用金属化合物气体中的激光束或离子束照射以在孔中和所述区域上沉积金属，并且通过光泵浦形成连接布线 CVD。 为了通过连接布线将多层布线结构中的上下布线电连接，连接布线与其延伸的中间布线电隔离。 上述布置可以通过例如光泵浦CVD在选择区域上提供具有聚焦离子束的孔和形成金属布线。 因此，可以在完成LSI之后实现精细加工并将LSI内的布线电连接在一起。 因此，可以进行LSI的调试，修理和缺陷分析。

公开(公告)号：US5055696A

公开(公告)日：1991-10-08

申请号：US391304

申请日：1989-08-08

申请人： Satoshi Haraichi ,  Fumikazu Itoh ,  Akira Shimase ,  Takahiko Takahashi

发明人： Satoshi Haraichi ,  Fumikazu Itoh ,  Akira Shimase ,  Takahiko Takahashi

IPC分类号： H01L21/302 ,  H01J37/304 ,  H01J37/305 ,  H01L21/3065

CPC分类号： H01J37/304 ,  H01J37/228 ,  H01J37/3005 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01L21/76892

摘要： In locally reactive etching by irradiating to a multilayered workpiece reactive beam generated by extracting the reactant gas ionized or by irradiating such focussing beam as ion beam, electron beam or laser beam to the multilayered workpiece in an atmosphere of reactant gas; each layer of a multilayered device comprising a plurality of layers formed on a substrate can be accurately and quickly eteched by detecting the change of the material of the layer currently being etched and after detecting the change of material, switching reactant gas to be ionized or atmospheric reactant gas to one complying with the material of the layer currently being etched. This multilayered device micro etching method can be readily put into practice by a multilayered device micro etching system further comprising means for detecting the change of the material of layer to be etched and means for switching and supplying a plurality of reactant gases, in a micro etching appratus for performing locally rective etching.

摘要翻译： 在局部反应蚀刻中，通过照射到通过提取离子化的反应物气体产生的多层工件反应性束，或者通过在反应气体的气氛中将这样的聚焦束作为离子束，电子束或激光束照射到多层工件; 通过检测当前被蚀刻的层的材料的变化，并且在检测到材料的变化，切换待离子化或大气的反应气体之后，可以精确而快速地将包含形成在基板上的多层的多层器件的每个层 反应气体与符合当前蚀刻层的材料一致。 这种多层器件微蚀刻方法可以通过多层器件微蚀刻系统容易地实施，该多层器件微蚀刻系统还包括用于在微蚀刻中检测被蚀刻层的材料的变化和用于切换和供应多个反应气体的装置的装置 用于进行局部矫正蚀刻。