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    Method of three-dimensional display of object-oriented figure information and system thereof
    1.
    发明授权
    Method of three-dimensional display of object-oriented figure information and system thereof 失效
    面向对象图形信息的三维显示方法及其系统

    公开(公告)号：US5467444A

    公开(公告)日：1995-11-14

    申请号：US789005

    申请日：1991-11-07

    申请人： Fumio Kawamura ,  Shigeru Shimada ,  Tsutomu Ikeda

    发明人： Fumio Kawamura ,  Shigeru Shimada ,  Tsutomu Ikeda

    IPC分类号： G06T15/20 ,  G06T17/00 ,  G06F15/50

    CPC分类号： G06T17/00 ,  G06T15/20

    摘要： In a system for displaying map information, an object base storage unit stores an object base relating to relational objects, a map data base storage unit stores a map data base relating to figure elements of map data, and an attribute data base storage unit stores an attribute data base relating to attribute data related to the figure elements of the map data. In response to an input command, a head one of the relational objects is retrieved from the object base, and entity objects are desired from a head relational object by referring to the object base, so that each of the desired entity objects is processed. The map data retrieving section retrieves the map data from the map data base in response to the processing of each map data entity object of the derived entity objects, and the attribute data retrieving section retrieves the attribute data from the attribute data base in response to the execution of each of attribute data entity objects of the derived entity objects. The converting section converts the map data and attribute data into three-dimensional display data and the display data is three-dimensionally displayed on the display unit. In this case, predetermined height data for the attribute of each figure element of the map data is stored in a table in advance. The height data is obtained by referring to the table in accordance with the attribute data, and the map data is converted into three-dimensional map data based on the obtained height data.

    摘要翻译： 在用于显示地图信息的系统中，对象库存储单元存储与关系对象有关的对象库，地图数据库存储单元存储与地图数据的图形元素有关的地图数据库，属性数据库存储单元存储 与与地图数据的图形元素有关的属性数据相关的属性数据库。 响应于输入命令，从对象库检索关系对象中的头一个，并且通过参考对象库从头部关系对象期望实体对象，从而处理每个所需的实体对象。 响应于导出的实体对象的每个地图数据实体对象的处理，地图数据检索部分从地图数据库检索地图数据，并且属性数据检索部分响应于属性数据库从属性数据库中检索属性数据 执行派生实体对象的每个属性数据实体对象。 转换部分将地图数据和属性数据转换为三维显示数据，并且在显示单元上三维地显示显示数据。 在这种情况下，地图数据的每个图形元素的属性的预定高度数据被预先存储在表中。 根据属性数据参照该表获得高度数据，并且基于获得的高度数据将地图数据转换为三维地图数据。

    Map information system capable of displaying layout information
    2.
    发明授权
    Map information system capable of displaying layout information 失效
    能够显示布局信息的地图信息系统

    公开(公告)号：US5448696A

    公开(公告)日：1995-09-05

    申请号：US173469

    申请日：1993-12-27

    申请人： Shigeru Shimada ,  Fumio Kawamura ,  Kazuyuki Suzuki ,  Nobuyuki Chikada ,  Shirou Takei

    发明人： Shigeru Shimada ,  Fumio Kawamura ,  Kazuyuki Suzuki ,  Nobuyuki Chikada ,  Shirou Takei

    IPC分类号： G06T17/05 ,  G06T11/60

    CPC分类号： G06T17/05

    摘要： A method for displaying information and system includes the steps of displacing map data on the screen of a display unit, displaying layout data representing one or more segments of a certain floor in each of the one or more structure elements of the map data displayed on a first designated portion, on a second designated portion of the screen in response to a layout display instruction, and displaying attribute data corresponding to each of the one or more segments of the floor.

    摘要翻译： 一种用于显示信息和系统的方法包括以下步骤：在显示单元的屏幕上移动地图数据，显示表示在一个或多个显示单元上显示的地图数据的一个或多个结构元素中的每一个中的特定楼层的一个或多个段的布局数据 第一指定部分，响应于布局显示指令在屏幕的第二指定部分上，并且显示对应于楼层的一个或多个段中的每一个的属性数据。

    Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby
    4.
    发明授权
    Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby 失效
    生产III族元素氮化物晶体的方法，其中使用的制造装置以及由此制造的半导体元件

    公开(公告)号：US07794539B2

    公开(公告)日：2010-09-14

    申请号：US10599501

    申请日：2005-03-31

    申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

    发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

    IPC分类号： C30B9/00 ,  C30B30/04 ,  C30B28/06 ,  C30B11/00

    CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

    摘要： A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in FIG. 7.

    摘要翻译： 一种生产III族元素的氮化物晶体的方法，其中获得了改善的生长速率并且可以在短时间内生长大量的高质量晶体，其中使用的制造装置以及使用该方法和装置得到的半导体元件 被提供。 该方法是生产III族元素氮化物晶体的方法，其包括使含有III族元素，氮和至少一种碱金属和碱土金属的材料溶液经受加压和加热的晶体生长过程 含氮气体的气氛使得材料溶液中的氮和III族元素彼此反应生长晶体。 该方法还包括在晶体生长过程之前，制备材料制备方法，该方法是在含氮气体的气氛中，将环境温度和环境压力中的至少一种设定为 高于设定为晶体生长过程的条件，使得氮能够溶解在含有III族元素和碱金属和碱土金属中的至少一种的熔体中。 根据本发明的方法可以通过使用例如图1所示的制造装置来执行。 7。

    Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
    7.
    发明申请
    Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride 有权
    用于生产III族元素氮化物晶体的装置和用于生产III族元素氮化物晶体的方法

    公开(公告)号：US20080213158A1

    公开(公告)日：2008-09-04

    申请号：US12082745

    申请日：2008-04-14

    申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

    发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

    IPC分类号： C30B23/00 ,  C01B21/06

    CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

    摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.

    摘要翻译： 提供III族氮化物晶体的制造装置和制造III族氮化物晶体的方法，由此可以制造高质量的晶体。 例如，使用本发明的装置如下生长晶体。 将晶体原料（131）和含氮气体引入反应器容器（120）中，通过加热器（110）向其施加热量，并在施加压力的气氛中生长晶体。 气体通过反应器容器的气体入口从气体供给装置（180）引入反应器容器（120），然后通过反应器的气体出口被排出到耐压容器（102）的内部 反应堆容器。 由于气体不通过耐压容器（102）直接引入反应器容器（120），附着在耐压容器（102）等上的杂质混合物进入晶体生长位置可以 被阻止 此外，由于气体流过反应器容器（120），所以在气体入口等处没有蒸发的碱金属等的聚集，并且这种碱金属不会流入气体供给装置（180 ）。 结果，可以提高获得的III族氮化物晶体的质量。

    Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device
    8.
    发明申请
    Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device 有权
    第III族氮化物晶体及其制造方法，III族氮化物晶体基板和半导体器件

    公开(公告)号：US20080022921A1

    公开(公告)日：2008-01-31

    申请号：US11628253

    申请日：2005-04-15

    申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

    发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

    IPC分类号： C30B29/38 ,  C30B11/06 ,  C30B9/10 ,  H01L33/00

    CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B11/00 ,  H01L33/0075 ,  H01L33/32

    摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

    摘要翻译： 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有 至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中 至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

    Process For Producing Aluminum Nitride Crystal And Aluminum Nitride Crystal Obtained Thereby
    10.
    发明申请
    Process For Producing Aluminum Nitride Crystal And Aluminum Nitride Crystal Obtained Thereby 审中-公开
    由此获得的氮化铝结晶和氮化铝晶体的制造方法

    公开(公告)号：US20080008642A1

    公开(公告)日：2008-01-10

    申请号：US11661013

    申请日：2005-08-24

    申请人： Yusuke Mori ,  Takatamo Sasaki ,  Fumio Kawamura ,  Yoshimura Masashi ,  Minoru Kawahara ,  Hiroaki Isobe

    发明人： Yusuke Mori ,  Takatamo Sasaki ,  Fumio Kawamura ,  Yoshimura Masashi ,  Minoru Kawahara ,  Hiroaki Isobe

    IPC分类号： C01B21/072 ,  C30B29/38 ,  C30B9/10

    CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/10

    摘要： The present invention provides a method for producing aluminum nitride crystals under mild pressure and temperature conditions. In the production method of aluminum nitride crystals, aluminum nitride crystals are formed and grown in the presence of nitrogen-containing gas by allowing aluminum and the nitrogen to react with each other in a flux containing the following component (A) and component (B), or a flux containing the following component (B). (A) At least one element selected from the group consisting of the alkali metal and the alkaline-earth metal. (B) At least one element selected from the group consisting of tin (Sn), gallium (Ga), indium (In), bismuth (Bi) and mercury (Hg).

    摘要翻译： 本发明提供了在温和的压力和温度条件下制备氮化铝晶体的方法。 在氮化铝晶体的制造方法中，通过使含有以下成分（A）和成分（B）的助熔剂中的铝和氮彼此反应，在含氮气体的存在下，形成氮化铝晶体， ，或含有以下组分（B）的助熔剂。 （A）选自由碱金属和碱土金属组成的组中的至少一种元素。 （B）选自锡（Sn），镓（Ga），铟（In），铋（Bi）和汞（Hg）中的至少一种元素。