Abstract:
A semiconductive device is described in which electrical contact is made with the semiconductor surface through a rupture in an overlying frangible dielectric coating. Contact is achieved by forming an electrode pad on the semiconductor surface, coating the surface of the semiconductor and the electrode pad with a frangible layer of dielectric, forming a terminal connector contact pad on the dielectric coating over the electrode pad, rupturing the dielectric layer to communicate the pads, and bonding a terminal lead to the connector contact pad. In a preferred embodiment, the rupturing and bonding steps are simultaneously achieved by compression bonding a terminal wire to the connector contact pad.