公开(公告)号：US20120040536A1

公开(公告)日：2012-02-16

申请号：US13207315

申请日：2011-08-10

申请人： Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park ,  Young-jin Choi ,  Omori Kenji

发明人： Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park ,  Young-jin Choi ,  Omori Kenji

IPC分类号： H01L21/318

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/4404 ,  H01L21/02274 ,  H01L21/02299

摘要： Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.

摘要翻译： 本发明的实施方案提供了在设置在处理室中的大尺寸基板上沉积含氮材料的方法。 在一个实施方案中，一种方法包括处理处理室内的一批衬底，以将一批含有底物的含氮材料从该批衬底上沉积，并在处理该批衬底期间以预定间隔进行调味过程以沉积导电 在处理室中设置的腔室部件的表面上的调味层。 腔室部件可以包括由裸铝制成而不阳极氧化的气体分配板。 在一个示例中，导电调味层可以包括非晶硅，掺杂非晶硅，掺杂硅，掺杂多晶硅，掺杂碳化硅等。

公开(公告)号：US08999847B2

公开(公告)日：2015-04-07

申请号：US13207315

申请日：2011-08-10

申请人： Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park ,  Young-jin Choi ,  Omori Kenji

发明人： Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park ,  Young-jin Choi ,  Omori Kenji

IPC分类号： H01L21/311 ,  H01L21/02 ,  C23C16/34 ,  C23C16/44

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/4404 ,  H01L21/02274 ,  H01L21/02299

摘要： Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.

摘要翻译： 本发明的实施方案提供了在设置在处理室中的大尺寸基板上沉积含氮材料的方法。 在一个实施方案中，一种方法包括处理处理室内的一批衬底，以将一批含有底物的含氮材料从该批衬底上沉积，并在处理该批衬底期间以预定间隔进行调味过程以沉积导电 在处理室中设置的腔室部件的表面上的调味层。 腔室部件可以包括由裸铝制成而不阳极氧化的气体分配板。 在一个示例中，导电调味层可以包括非晶硅，掺杂非晶硅，掺杂硅，掺杂多晶硅，掺杂碳化硅等。

公开(公告)号：US20090283039A1

公开(公告)日：2009-11-19

申请号：US12467477

申请日：2009-05-18

申请人： JOHN M. WHITE ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

发明人： JOHN M. WHITE ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

IPC分类号： C23C16/54 ,  F28D7/00

CPC分类号： F28D7/00 ,  C23C16/4405 ,  F28D2021/0078 ,  F28F9/26

摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

摘要翻译： 本发明通常包括组件之间的联接。 当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。 反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。 因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。 然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。 因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

公开(公告)号：US20130140009A1

公开(公告)日：2013-06-06

申请号：US13722637

申请日：2012-12-20

申请人： John M. White ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

发明人： John M. White ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

IPC分类号： F28D7/00

CPC分类号： F28D7/00 ,  C23C16/4405 ,  F28D2021/0078 ,  F28F9/26

摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

公开(公告)号：US20090258162A1

公开(公告)日：2009-10-15

申请号：US12422183

申请日：2009-04-10

申请人： GAKU FURUTA ,  Young-Jin Choi ,  Soo Young Choi ,  Beom Soo Park ,  John M. White ,  Suhail Anwar ,  Robin L. Tiner

发明人： GAKU FURUTA ,  Young-Jin Choi ,  Soo Young Choi ,  Beom Soo Park ,  John M. White ,  Suhail Anwar ,  Robin L. Tiner

IPC分类号： C23C16/44 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01J37/32357 ,  C23C16/4405 ,  C23C16/507 ,  H01J37/3244 ,  H01J2237/3321

摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.

摘要翻译： 本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。 通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。 气体可以在多个位置被供给到腔室。 在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

公开(公告)号：US20090107955A1

公开(公告)日：2009-04-30

申请号：US12205414

申请日：2008-09-05

申请人： ROBIN L. TINER ,  Suhail Anwar ,  Gaku Furuta ,  Young Jin Choi ,  Beom Soo Park ,  Soo Young Choi ,  John M. White

发明人： ROBIN L. TINER ,  Suhail Anwar ,  Gaku Furuta ,  Young Jin Choi ,  Beom Soo Park ,  Soo Young Choi ,  John M. White

IPC分类号： B44C1/22 ,  C23C16/455 ,  C23C16/44 ,  C23F1/08

CPC分类号： H01J37/32357 ,  C23C16/4404 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32834

摘要： The present invention generally includes a chamber liner spaced from a chamber wall to permit processing gases to be pulled between the chamber liner and the chamber wall when withdrawing gases from the processing chamber. When the vacuum pump is below the susceptor, processing gases will be drawn below the susceptor and may lead to undesired deposition onto process chamber components. Additionally, the processing gases will be pulled past the slit valve opening and potentially deposit within the slit valve opening. When material deposits in the slit valve opening, flaking may occur and contaminate the substrates. By drawing the processing gases along the sidewalls other than the one having the slit valve opening therethrough, undesired deposition on the slit valve opening may be reduced.

摘要翻译： 本发明通常包括与室壁间隔开的腔室衬套，以便当从处理腔室排出气体时允许处理气体在腔室衬套和室壁之间被拉动。 当真空泵在基座下方时，处理气体将被拉到基座下方，并可能导致不希望的沉积到处理室部件上。 此外，处理气体将被拉过狭缝阀开口并可能沉积在狭缝阀开口内。 当材料沉积在狭缝阀开口中时，会发生剥落并污染基板。 通过沿着具有狭缝阀开口的侧壁以外的侧壁吸收处理气体，可以减少狭缝阀开口上的不期望的沉积。

公开(公告)号：US20100151688A1

公开(公告)日：2010-06-17

申请号：US12634921

申请日：2009-12-10

申请人： Young Jin Choi ,  Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park

发明人： Young Jin Choi ,  Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park

IPC分类号： H01L21/3065 ,  H01L21/302

CPC分类号： C23C16/4583 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32733 ,  H01L21/68742

摘要： Embodiments disclosed herein generally include methods of ensuring uniform deposition on a substrate. The smallest gap between a portion of the substrate and the substrate support upon which the substrate rests may lead to uneven deposition of material or ‘thin spots’ on the substrate. Large area substrates, due to their size, are susceptible to numerous gaps at random locations. By inducing an electrostatic charge on the substrate prior to placing the substrate onto the substrate support, the substrate may be placed generally flush against the substrate support. The electrostatic charge on the substrate creates an attraction between the substrate and substrate support to pull substantially the entire surface of the substrate into contact with the substrate support. Material may then be substantially uniformly deposited on the substrate while reducing ‘thin spots’.

摘要翻译： 本文公开的实施例通常包括确保在基底上均匀沉积的方法。 衬底的一部分和衬底支撑物之间的最小间隙可能导致材料的不均匀沉积或衬底上的“薄点”。 由于其大尺寸，大面积基板在随机位置易受许多间隙的影响。 通过在将衬底放置在衬底支撑件上之前在衬底上引起静电电荷，衬底可以放置在与衬底支撑件相对齐齐的位置。 衬底上的静电电荷在衬底和衬底支撑件之间产生吸引力，以基本上将衬底的整个表面拉到与衬底支撑件接触。 然后可以将材料基本均匀地沉积在衬底上，同时减少“薄点”。

公开(公告)号：US20090255798A1

公开(公告)日：2009-10-15

申请号：US12271616

申请日：2008-11-14

申请人： Gaku Furuta ,  Young-Jin Choi ,  Soo Young Choi ,  Beom Soo Park ,  John M. White ,  Suhail Anwar ,  Robin L. Tiner

发明人： Gaku Furuta ,  Young-Jin Choi ,  Soo Young Choi ,  Beom Soo Park ,  John M. White ,  Suhail Anwar ,  Robin L. Tiner

IPC分类号： C23C16/513

CPC分类号： C23C16/5096 ,  C23C16/4405 ,  C23C16/45561 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449

摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.

摘要翻译： 本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。 通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。 气体可以在多个位置被供给到腔室。 在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

公开(公告)号：US20130263782A1

公开(公告)日：2013-10-10

申请号：US13569064

申请日：2012-08-07

申请人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

发明人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

IPC分类号： C23C16/04

摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

摘要翻译： 本文描述了用于处理衬底的装置。 用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面， 以及与阴影框体连接的可拆卸唇缘。 可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

公开(公告)号：US10676817B2

公开(公告)日：2020-06-09

申请号：US13569064

申请日：2012-08-07

申请人： Qunhua Wang ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

发明人： Qunhua Wang ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

IPC分类号： C23C16/04 ,  C23C16/458 ,  C23C14/04

摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.