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    Atomic layer deposition method of depositing an oxide on a substrate
    1.
    发明申请
    Atomic layer deposition method of depositing an oxide on a substrate 有权
    在衬底上沉积氧化物的原子层沉积方法

    公开(公告)号：US20060257584A1

    公开(公告)日：2006-11-16

    申请号：US11491383

    申请日：2006-07-20

    申请人： Garo Derderian ,  Shuang Meng ,  Danny Dynka

    发明人： Garo Derderian ,  Shuang Meng ,  Danny Dynka

    IPC分类号： H05H1/24 ,  C23C16/00

    CPC分类号： C23C16/45542 ,  C23C16/402 ,  C23C16/403 ,  C23C16/407 ,  C23C16/45531

    摘要： The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.

    摘要翻译： 本发明包括在衬底上沉积氧化物的原子层沉积方法。 在一个实施方式中，衬底位于沉积室内。 第一种物质被化学吸附到基底上以在气相前体的沉积室内形成第一物质单层。 化学吸附的第一物质与至少部分从O 2和O 3 3中的至少一个导出的远程等离子体氧接触，并且与远程等离子体氮有效地与第一物质反应 物质形成包含第一物质单层的组分的氧化物的单层。 连续重复化学吸附和与远程等离子体氧和远程等离子体氮的接触，以在衬底上形成多孔氧化物。 考虑了其他方面和实现。

    Atomic layer deposition method of depositing an oxide on a substrate
    2.
    发明申请
    Atomic layer deposition method of depositing an oxide on a substrate 有权
    在衬底上沉积氧化物的原子层沉积方法

    公开(公告)号：US20050123690A1

    公开(公告)日：2005-06-09

    申请号：US10733201

    申请日：2003-12-09

    申请人： Garo Derderian ,  Shuang Meng ,  Danny Dynka

    发明人： Garo Derderian ,  Shuang Meng ,  Danny Dynka

    IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00 ,  C23C14/10

    CPC分类号： C23C16/45542 ,  C23C16/402 ,  C23C16/403 ,  C23C16/407 ,  C23C16/45531

    摘要： The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.

    摘要翻译： 本发明包括在衬底上沉积氧化物的原子层沉积方法。 在一个实施方式中，衬底位于沉积室内。 第一种物质被化学吸附到基底上以在气相前体的沉积室内形成第一物质单层。 化学吸附的第一物质与至少部分从O 2和O 3 3中的至少一个导出的远程等离子体氧接触，并且与远程等离子体氮有效地与第一物质反应 物质形成包含第一物质单层的组分的氧化物的单层。 连续重复化学吸附和与远程等离子体氧和远程等离子体氮的接触，以在衬底上形成多孔氧化物。 考虑了其他方面和实现。

    Atomic layer deposition method of forming an oxide comprising layer on a substrate
    4.
    发明申请
    Atomic layer deposition method of forming an oxide comprising layer on a substrate 失效
    在基板上形成含氧化物层的原子层沉积方法

    公开(公告)号：US20060003102A1

    公开(公告)日：2006-01-05

    申请号：US11216897

    申请日：2005-08-31

    申请人： Garo Derderian ,  Demetrius Sarigiannis ,  Shuang Meng

    发明人： Garo Derderian ,  Demetrius Sarigiannis ,  Shuang Meng

    IPC分类号： C23C16/00

    CPC分类号： H01L51/0516 ,  C23C16/40 ,  C23C16/45544 ,  H01L21/3141

    摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.

    摘要翻译： 本发明包括在衬底上沉积包含层的氧化物的原子层沉积方法。 在一个实施方式中，衬底位于沉积室内。 第一种物质被化学吸附以从气态第一前体在沉积室内的基底上形成第一物质单层。 化学吸附的第一物质与有效与第一物质反应以形成第一物质单层的组分的氧化物的气态第二前体接触。 所述接触至少部分地由流动的O 3至沉积室导致，其中O 3在至少170℃的温度下在其位置处 被排放到沉积室中。 依次重复化学吸附和接触以在基底上形成含氧化物层。 考虑另外的方面和实现。

    Systems and methods for depositing material onto microfeature workpieces in reaction chambers
    6.
    发明申请
    Systems and methods for depositing material onto microfeature workpieces in reaction chambers 有权
    将物质沉积在反应室中的微型工件上的系统和方法

    公开(公告)号：US20050061243A1

    公开(公告)日：2005-03-24

    申请号：US10665908

    申请日：2003-09-18

    申请人： Demetrius Sarigiannis ,  Shuang Meng ,  Garo Derderian

    发明人： Demetrius Sarigiannis ,  Shuang Meng ,  Garo Derderian

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/45561

    摘要： Systems and methods for depositing material onto a microfeature workpiece in a reaction chamber are disclosed herein. In one embodiment, the system includes a gas supply assembly having a first gas source, a first gas conduit coupled to the first gas source, a first valve assembly, a reaction chamber, and a gas distributor carried by the reaction chamber. The first valve assembly includes first and second valves that are in fluid communication with the first gas conduit. The first and second valves are configured in a parallel arrangement so that the first gas flows through the first valve and/or the second valve. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译： 本文公开了将物质沉积在反应室中的微特征工件上的系统和方法。 在一个实施例中，系统包括具有第一气体源，耦合到第一气体源的第一气体管道，由反应室承载的第一阀组件，反应室和气体分配器的气体供应组件。 第一阀组件包括与第一气体导管流体连通的第一和第二阀。 第一和第二阀构造成并联布置，使得第一气体流过第一阀和/或第二阀。 要强调的是提供本摘要以符合要求摘要的规则。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    Atomic layer deposition method of forming an oxide comprising layer on a substrate
    7.
    发明申请
    Atomic layer deposition method of forming an oxide comprising layer on a substrate 有权

    公开(公告)号：US20060029737A1

    公开(公告)日：2006-02-09

    申请号：US11200275

    申请日：2005-08-09

    申请人： Garo Derderian ,  Demetrius Sarigiannis ,  Shuang Meng

    发明人： Garo Derderian ,  Demetrius Sarigiannis ,  Shuang Meng

    IPC分类号： C23C16/00

    CPC分类号： H01L51/0516 ,  C23C16/40 ,  C23C16/45544 ,  H01L21/3141

    摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.

    Atomic layer deposition method of forming an oxide comprising layer on a substrate
    8.
    发明申请
    Atomic layer deposition method of forming an oxide comprising layer on a substrate 失效
    在基板上形成含氧化物层的原子层沉积方法

    公开(公告)号：US20050186731A1

    公开(公告)日：2005-08-25

    申请号：US10783242

    申请日：2004-02-19

    申请人： Garo Derderian ,  Demetrius Sarigiannis ,  Shuang Meng

    发明人： Garo Derderian ,  Demetrius Sarigiannis ,  Shuang Meng

    IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/314 ,  H01L21/469 ,  H01L21/8238 ,  H01L21/8242

    CPC分类号： H01L51/0516 ,  C23C16/40 ,  C23C16/45544 ,  H01L21/3141

    摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.

    摘要翻译： 本发明包括在衬底上沉积包含层的氧化物的原子层沉积方法。 在一个实施方式中，衬底位于沉积室内。 第一种物质被化学吸附以从气态第一前体在沉积室内的基底上形成第一物质单层。 化学吸附的第一物质与有效与第一物质反应以形成第一物质单层的组分的氧化物的气态第二前体接触。 所述接触至少部分地由流动的O 3至沉积室导致，其中O 3在至少170℃的温度下在其位置处 被排放到沉积室中。 依次重复化学吸附和接触以在基底上形成含氧化物层。 考虑另外的方面和实现。

    SYSTEMS AND METHODS FOR DEPOSITING MATERIAL ONTO MICROFEATURE WORKPIECES IN REACTION CHAMBERS
    9.
    发明申请
    SYSTEMS AND METHODS FOR DEPOSITING MATERIAL ONTO MICROFEATURE WORKPIECES IN REACTION CHAMBERS 审中-公开
    将材料沉积在反应釜中的微生物工件的系统和方法

    公开(公告)号：US20080029028A1

    公开(公告)日：2008-02-07

    申请号：US11872313

    申请日：2007-10-15

    申请人： Demetrius Sarigiannis ,  Shuang Meng ,  Garo Derderian

    发明人： Demetrius Sarigiannis ,  Shuang Meng ,  Garo Derderian

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/45561

    摘要： Systems and methods for depositing material onto a microfeature workpiece in a reaction chamber are disclosed herein. In one embodiment, the system includes a gas supply assembly having a first gas source, a first gas conduit coupled to the first gas source, a first valve assembly, a reaction chamber, and a gas distributor carried by the reaction chamber. The first valve assembly includes first and second valves that are in fluid communication with the first gas conduit. The first and second valves are configured in a parallel arrangement so that the first gas flows through the first valve and/or the second valve. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译： 本文公开了将物质沉积在反应室中的微特征工件上的系统和方法。 在一个实施例中，系统包括具有第一气体源，耦合到第一气体源的第一气体管道，由反应室承载的第一阀组件，反应室和气体分配器的气体供应组件。 第一阀组件包括与第一气体导管流体连通的第一和第二阀。 第一和第二阀构造成并联布置，使得第一气体流过第一阀和/或第二阀。 要强调的是提供本摘要以符合要求摘要的规则。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。