公开(公告)号：US5153890A

公开(公告)日：1992-10-06

申请号：US782834

申请日：1991-10-24

申请人： Gian-Luca Bona ,  Wilhelm Heuberger ,  Peter Roentgen ,  Peter Unger

发明人： Gian-Luca Bona ,  Wilhelm Heuberger ,  Peter Roentgen ,  Peter Unger

IPC分类号： H01S5/00 ,  H01L21/20 ,  H01L29/737 ,  H01L33/00 ,  H01L33/16 ,  H01L33/24 ,  H01L33/30 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01L33/30 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/737 ,  H01L33/0062 ,  H01L33/16 ,  H01S5/16 ,  H01S5/2232 ,  H01S5/32 ,  H01L33/24 ,  H01S5/223 ,  H01S5/2234 ,  H01S5/2235 ,  H01S5/2237 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/3206 ,  H01S5/32325

摘要： A semiconductor device such as a laser diode grown on a structured substrate surface having horizontal regions and adjacent inclined sidewall surfaces. The horizontal regions are of standard orientation while the inclined surfaces are misoriented. The layers forming the device are grown on top of a structured surface, with at least the active layer of the semiconductor material assuming an ordered state which depends on the orientation of the substrate surface. The center section of the active layer is deposited on top of a horizontal region. This section is in the ordered state and has a lower bandgap energy than the terminating sections which are grown on the inclined regions and which exhibit a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap materials so that buried devices can be obtained that provide strongly confined and non-absorbing mirrors.

摘要翻译： 在具有水平区域和相邻的倾斜侧壁表面的结构化衬底表面上生长的诸如激光二极管的半导体器件。 水平区域具有标准取向，而倾斜表面的方位不对。 形成器件的层在结构化表面的顶部生长，至少半导体材料的有源层呈现取决于衬底表面取向的有序状态。 有源层的中心部分沉积在水平区域的顶部。 该部分处于有序状态，并且具有比在倾斜区域上生长且具有更宽带隙的端接部分更低的带隙能量。 有源层可以在具有更宽带隙材料的任一横向方向上终止，使得可以获得提供强约束和非吸收反射镜的掩埋器件。

公开(公告)号：US06204560B1

公开(公告)日：2001-03-20

申请号：US09063173

申请日：1998-04-20

申请人： Andreas Daetwyler ,  Urs Deutsch ,  Christoph Harder ,  Wilhelm Heuberger ,  Eberhard Latta ,  Abram Jakubowicz ,  Albertus Oosenbrug ,  William Patrick ,  Peter Roentgen ,  Erica Williams

发明人： Andreas Daetwyler ,  Urs Deutsch ,  Christoph Harder ,  Wilhelm Heuberger ,  Eberhard Latta ,  Abram Jakubowicz ,  Albertus Oosenbrug ,  William Patrick ,  Peter Roentgen ,  Erica Williams

IPC分类号： H01L2352

CPC分类号： H01S5/0425 ,  H01L21/28575 ,  Y10S257/915

摘要： As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride.

摘要翻译： 如下文将更详细地描述的，这里公开了用于非硅半导体技术的氮化钛扩散阻挡层和相关方法。 在本发明的一个方面中，半导体器件包括非硅有源表面。 该改进包括用于形成与非硅有源表面的外部电连接的欧姆接触，其中欧姆接触包括至少一层主要由氮化钛组成的层。 在本发明的另一方面，公开了一种半导体脊波导激光器，其包括半导体衬底和设置在衬底上的有源层。 包覆层部分地支撑在衬底上并且部分地支撑在有源层上。 包覆层包括以与活性区域相对的关系设置的脊部。 金属化结构基本上覆盖脊部并且包括至少一个由氮化钛组成的层。

公开(公告)号：US5037776A

公开(公告)日：1991-08-06

申请号：US407507

申请日：1989-09-14

申请人： Yvan Galeuchet ,  Volker Graf ,  Wilhelm Heuberger ,  Peter Roentgen

发明人： Yvan Galeuchet ,  Volker Graf ,  Wilhelm Heuberger ,  Peter Roentgen

IPC分类号： H01L29/201 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L21/338 ,  H01L29/775 ,  H01L29/812 ,  H01S5/12 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/40

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/775 ,  H01S5/323 ,  H01S5/34 ,  H01S5/1228 ,  H01S5/2238 ,  H01S5/2275 ,  H01S5/305 ,  H01S5/3202 ,  H01S5/3428 ,  H01S5/4031 ,  Y10S148/065 ,  Y10S148/095

摘要： A method, and devices produced therewith, for the epitaxial growth of sub-micron semiconductor structures with at least one crystal plane-dependently grown, buried active layer (24) consisting of a III-V compound. The active layer (24) and adjacent embedding layers (23, 25) form a heterostructure produced in a one-step growth process not requiring removal of the sample from the growth chamber in between layer depositions. The layers of the structure are grown on a semiconductor substrate (21) having a structured surface exposing regions of different crystal orientation providing growth and no-growth-planes for the selective growth process. The method allows the production of multiple, closely spaced active layers and of layers consisting of adjoining sections having different physical properties.

公开(公告)号：US5059552A

公开(公告)日：1991-10-22

申请号：US669816

申请日：1991-03-15

申请人： Christoph S. Harder ,  Wilhelm Heuberger ,  Peter D. Hoh ,  David J. Webb

发明人： Christoph S. Harder ,  Wilhelm Heuberger ,  Peter D. Hoh ,  David J. Webb

IPC分类号： H01S5/00 ,  H01L21/318 ,  H01S5/22

CPC分类号： H01S5/22 ,  H01L21/3185 ,  Y10S148/10 ,  Y10S438/951 ,  Y10S438/978

摘要： A process for forming the ridge structure of a self-aligned InP-system, double heterostructure (DH) laser, particularly useful for long wavelength devices as required for signal transmission systems includes a thin Si.sub.3 N.sub.4 layer (41) inserted between a photoresist mask (42) that defines the ridge structure, and a contact layer (35). Using a Si.sub.3 N.sub.4 layer (4) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si.sub.3 N.sub.4 layer (43) for device embedding, provides for the etch selectively required in the process step that is used to expose the contact layer to ohmic contact metallization deposition.