Abstract:
A light oscillation device has a self oscillation semiconductor laser that has a double quantum well separated confinement heterostructure made of GaInN/GaN/AlGaN materials and that includes a saturable absorber section which is applied with a negative bias voltage and a gain section into which a gain current is injected, a light separation unit that separates a portion of laser light beams from the self oscillation semiconductor laser, a light sensing element that senses the laser light beams separated by the light separation unit, and a current control circuit which controls a current injected into the gain section of the self oscillation semiconductor laser based on an amount of the laser light beams which are sensed by the light sensing element.
Abstract translation:光振荡装置具有自激振荡半导体激光器,其具有由GaInN / GaN / AlGaN材料制成的双量子阱分离的限制异质结构,并且包括施加负偏置电压的可饱和吸收体部分和增益部分 电流被注入,分离来自自身振荡半导体激光器的激光束的一部分的光分离单元,感测由光分离单元分离的激光束的感光元件,以及控制注入电流的电流控制电路 基于由感光元件感测的激光束的量,进入自身振荡半导体激光器的增益部。
Abstract:
A light oscillation device has a self oscillation semiconductor laser that has a double quantum well separated confinement heterostructure made of GaInN/GaN/AlGaN materials and that includes a saturable absorber section which is applied with a negative bias voltage and a gain section into which a gain current is injected, a light separation unit that separates a portion of laser light beams from the self oscillation semiconductor laser, a light sensing element that senses the laser light beams separated by the light separation unit, and a current control circuit which controls a current injected into the gain section of the self oscillation semiconductor laser based on an amount of the laser light beams which are sensed by the light sensing element.
Abstract translation:光振荡装置具有自激振荡半导体激光器,其具有由GaInN / GaN / AlGaN材料制成的双量子阱分离的限制异质结构,并且包括施加负偏置电压的可饱和吸收体部分和增益部分 电流被注入,分离来自自身振荡半导体激光器的激光束的一部分的光分离单元,感测由光分离单元分离的激光束的感光元件,以及控制注入电流的电流控制电路 基于由感光元件感测的激光束的量,进入自身振荡半导体激光器的增益部。
Abstract:
A recording device that records information in an optical recording medium includes: a self excited oscillation semiconductor laser including a saturable absorber section to apply a bias voltage and a gain section to inject a gain current, and also emitting a laser light to record the information in the optical recording medium; a reference signal generation unit generating a master clock signal and also supplying an injection signal synchronized with the master clock signal to the gain section of the self excited oscillation semiconductor laser; and a recording signal generation unit generating a recording signal based upon the master clock signal and also applying the recording signal to the saturable absorber section of the self excited oscillation semiconductor laser as the bias voltage.
Abstract:
A recording device that records information in an optical recording medium includes: a self excited oscillation semiconductor laser including a saturable absorber section to apply a bias voltage and a gain section to inject a gain current, and also emitting a laser light to record the information in the optical recording medium; a reference signal generation unit generating a master clock signal and also supplying an injection signal synchronized with the master clock signal to the gain section of the self excited oscillation semiconductor laser; and a recording signal generation unit generating a recording signal based upon the master clock signal and also applying the recording signal to the saturable absorber section of the self excited oscillation semiconductor laser as the bias voltage.
Abstract:
A recording device that records information in an optical recording medium includes: a self excited oscillation semiconductor laser including a saturable absorber section to apply a bias voltage and a gain section to inject a gain current, and also emitting a laser light to record the information in the optical recording medium; a reference signal generation unit generating a master clock signal and also supplying an injection signal synchronized with the master clock signal to the gain section of the self excited oscillation semiconductor laser; and a recording signal generation unit generating a recording signal based upon the master clock signal and also applying the recording signal to the saturable absorber section of the self excited oscillation semiconductor laser as the bias voltage.
Abstract:
Provided is a recording apparatus including a self-excited oscillation semiconductor laser that has a double quantum well separate confinement heterostructure and includes a saturable absorber section to which a negative bias voltage is applied and a gain section into which a gain current is injected, an optical separation unit, an objective lens, a light reception element, a pulse detection unit, a reference signal generation unit, a phase comparison unit, a recording signal generation unit, and a control unit.
Abstract:
An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
Abstract:
A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
Abstract:
An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration. The laser diode can be driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
Abstract:
There is provided a driving method of a self-oscillating semiconductor laser device including a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer and a second compound semiconductor layer configuring an emission region and a saturable absorption region, are successively laminated, a second electrode formed on the second compound semiconductor layer, and a first electrode electrically connected to the first compound semiconductor layer. The second electrode is separated into a first portion to create a forward bias state by passing current to the first electrode via the emission region and a second portion to apply an electric field to the saturable absorption region by a separation groove. The current greater than a current value where kink is occurred in optical output-current characteristics is to be passed to the first portion of the second electrode.