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190 条记录 (耗时 0.025 秒)

    LIGHT OSCILLATION DEVICE AND RECORDING DEVICE
    1.
    发明申请
    LIGHT OSCILLATION DEVICE AND RECORDING DEVICE 有权
    光振荡装置和记录装置

    公开(公告)号：US20110234744A1

    公开(公告)日：2011-09-29

    申请号：US13052547

    申请日：2011-03-21

    申请人： Goro Fujita ,  Takao Miyajima ,  Hideki Watanabe

    发明人： Goro Fujita ,  Takao Miyajima ,  Hideki Watanabe

    IPC分类号： B41J2/435 ,  H01S5/00

    CPC分类号： G11B7/1263 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0601 ,  H01S5/06255 ,  H01S5/0658 ,  H01S5/22 ,  H01S5/34333

    摘要： A light oscillation device has a self oscillation semiconductor laser that has a double quantum well separated confinement heterostructure made of GaInN/GaN/AlGaN materials and that includes a saturable absorber section which is applied with a negative bias voltage and a gain section into which a gain current is injected, a light separation unit that separates a portion of laser light beams from the self oscillation semiconductor laser, a light sensing element that senses the laser light beams separated by the light separation unit, and a current control circuit which controls a current injected into the gain section of the self oscillation semiconductor laser based on an amount of the laser light beams which are sensed by the light sensing element.

    摘要翻译： 光振荡装置具有自激振荡半导体激光器，其具有由GaInN / GaN / AlGaN材料制成的双量子阱分离的限制异质结构，并且包括施加负偏置电压的可饱和吸收体部分和增益部分 电流被注入，分离来自自身振荡半导体激光器的激光束的一部分的光分离单元，感测由光分离单元分离的激光束的感光元件，以及控制注入电流的电流控制电路 基于由感光元件感测的激光束的量，进入自身振荡半导体激光器的增益部。

    Light oscillation device and recording device
    2.
    发明授权
    Light oscillation device and recording device 有权
    光振装置和记录装置

    公开(公告)号：US08842708B2

    公开(公告)日：2014-09-23

    申请号：US13052547

    申请日：2011-03-21

    申请人： Goro Fujita ,  Takao Miyajima ,  Hideki Watanabe

    发明人： Goro Fujita ,  Takao Miyajima ,  Hideki Watanabe

    IPC分类号： B41J2/385 ,  B41J2/47 ,  B41J2/00 ,  H01S5/00 ,  H01S5/06 ,  H01S5/343 ,  G11B7/1263 ,  B82Y20/00 ,  H01S5/065 ,  H01S5/0625 ,  H01S5/22

    CPC分类号： G11B7/1263 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0601 ,  H01S5/06255 ,  H01S5/0658 ,  H01S5/22 ,  H01S5/34333

    摘要： A light oscillation device has a self oscillation semiconductor laser that has a double quantum well separated confinement heterostructure made of GaInN/GaN/AlGaN materials and that includes a saturable absorber section which is applied with a negative bias voltage and a gain section into which a gain current is injected, a light separation unit that separates a portion of laser light beams from the self oscillation semiconductor laser, a light sensing element that senses the laser light beams separated by the light separation unit, and a current control circuit which controls a current injected into the gain section of the self oscillation semiconductor laser based on an amount of the laser light beams which are sensed by the light sensing element.

    摘要翻译： 光振荡装置具有自激振荡半导体激光器，其具有由GaInN / GaN / AlGaN材料制成的双量子阱分离的限制异质结构，并且包括施加负偏置电压的可饱和吸收体部分和增益部分 电流被注入，分离来自自身振荡半导体激光器的激光束的一部分的光分离单元，感测由光分离单元分离的激光束的感光元件，以及控制注入电流的电流控制电路 基于由感光元件感测的激光束的量，进入自身振荡半导体激光器的增益部。

    RECORDING DEVICE AND OPTICAL OSCILLATOR DEVICE
    3.
    发明申请
    RECORDING DEVICE AND OPTICAL OSCILLATOR DEVICE 失效
    记录装置和光学振荡器装置

    公开(公告)号：US20130100789A9

    公开(公告)日：2013-04-25

    申请号：US13209714

    申请日：2011-08-15

    申请人： Goro Fujita ,  Takao Miyajima ,  Masaru Kuramoto ,  Hideki Watanabe

    发明人： Goro Fujita ,  Takao Miyajima ,  Masaru Kuramoto ,  Hideki Watanabe

    IPC分类号： G11B7/0045

    CPC分类号： H01S5/0265 ,  B82Y20/00 ,  G11B7/0045 ,  G11B7/126 ,  G11B7/127 ,  G11B2007/00457 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0614 ,  H01S5/0658 ,  H01S5/06821 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34306

    摘要： A recording device that records information in an optical recording medium includes: a self excited oscillation semiconductor laser including a saturable absorber section to apply a bias voltage and a gain section to inject a gain current, and also emitting a laser light to record the information in the optical recording medium; a reference signal generation unit generating a master clock signal and also supplying an injection signal synchronized with the master clock signal to the gain section of the self excited oscillation semiconductor laser; and a recording signal generation unit generating a recording signal based upon the master clock signal and also applying the recording signal to the saturable absorber section of the self excited oscillation semiconductor laser as the bias voltage.

    摘要翻译： 在光记录介质中记录信息的记录装置包括：自激振荡半导体激光器，包括施加偏置电压的可饱和吸收部和注入增益电流的增益部，并且还发射激光以将信息记录在 光记录介质; 参考信号生成单元，生成主时钟信号，并且将与主时钟信号同步的注入信号提供给自激振荡半导体激光器的增益部分; 以及记录信号生成单元，其基于主时钟信号生成记录信号，并且将记录信号施加到自激振荡半导体激光器的可饱和吸收体部分作为偏置电压。

    Recording device and optical oscillator device
    4.
    发明授权
    Recording device and optical oscillator device 失效
    记录装置和光振装置

    公开(公告)号：US08472302B2

    公开(公告)日：2013-06-25

    申请号：US13209714

    申请日：2011-08-15

    申请人： Goro Fujita ,  Takao Miyajima ,  Masaru Kuramoto ,  Hideki Watanabe

    发明人： Goro Fujita ,  Takao Miyajima ,  Masaru Kuramoto ,  Hideki Watanabe

    IPC分类号： G11B7/00

    CPC分类号： H01S5/0265 ,  B82Y20/00 ,  G11B7/0045 ,  G11B7/126 ,  G11B7/127 ,  G11B2007/00457 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0614 ,  H01S5/0658 ,  H01S5/06821 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34306

    摘要： A recording device that records information in an optical recording medium includes: a self excited oscillation semiconductor laser including a saturable absorber section to apply a bias voltage and a gain section to inject a gain current, and also emitting a laser light to record the information in the optical recording medium; a reference signal generation unit generating a master clock signal and also supplying an injection signal synchronized with the master clock signal to the gain section of the self excited oscillation semiconductor laser; and a recording signal generation unit generating a recording signal based upon the master clock signal and also applying the recording signal to the saturable absorber section of the self excited oscillation semiconductor laser as the bias voltage.

    摘要翻译： 在光记录介质中记录信息的记录装置包括：自激振荡半导体激光器，包括施加偏置电压的可饱和吸收部和注入增益电流的增益部，并且还发射激光以将信息记录在 光记录介质; 参考信号生成单元，生成主时钟信号，并且将与主时钟信号同步的注入信号提供给自激振荡半导体激光器的增益部分; 以及记录信号生成单元，其基于主时钟信号生成记录信号，并且将记录信号施加到自激振荡半导体激光器的可饱和吸收体部分作为偏置电压。

    RECORDING DEVICE AND OPTICAL OSCILLATOR DEVICE
    5.
    发明申请
    RECORDING DEVICE AND OPTICAL OSCILLATOR DEVICE 失效
    记录装置和光学振荡器装置

    公开(公告)号：US20120044793A1

    公开(公告)日：2012-02-23

    申请号：US13209714

    申请日：2011-08-15

    申请人： Goro Fujita ,  Takao Miyajima ,  Masaru Kuramoto ,  Hideki Watanabe

    发明人： Goro Fujita ,  Takao Miyajima ,  Masaru Kuramoto ,  Hideki Watanabe

    IPC分类号： G11B7/0045

    CPC分类号： H01S5/0265 ,  B82Y20/00 ,  G11B7/0045 ,  G11B7/126 ,  G11B7/127 ,  G11B2007/00457 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0614 ,  H01S5/0658 ,  H01S5/06821 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34306

    摘要： A recording device that records information in an optical recording medium includes: a self excited oscillation semiconductor laser including a saturable absorber section to apply a bias voltage and a gain section to inject a gain current, and also emitting a laser light to record the information in the optical recording medium; a reference signal generation unit generating a master clock signal and also supplying an injection signal synchronized with the master clock signal to the gain section of the self excited oscillation semiconductor laser; and a recording signal generation unit generating a recording signal based upon the master clock signal and also applying the recording signal to the saturable absorber section of the self excited oscillation semiconductor laser as the bias voltage.

    摘要翻译： 在光记录介质中记录信息的记录装置包括：自激振荡半导体激光器，包括施加偏置电压的可饱和吸收部和注入增益电流的增益部，并且还发射激光以将信息记录在 光记录介质; 参考信号生成单元，生成主时钟信号，并且将与主时钟信号同步的注入信号提供给自激振荡半导体激光器的增益部分; 以及记录信号生成单元，其基于主时钟信号生成记录信号，并且将记录信号施加到自激振荡半导体激光器的可饱和吸收体部分作为偏置电压。

    Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same
    8.
    发明授权
    Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same 有权
    双段半导体激光装置及其制造方法及其驱动方法

    公开(公告)号：US08575626B2

    公开(公告)日：2013-11-05

    申请号：US13553380

    申请日：2012-07-19

    申请人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

    发明人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

    IPC分类号： H01L27/15 ,  H01L21/00

    CPC分类号： H01S5/0625 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333

    摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

    摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

    SELF-OSCILLATING SEMICONDUCTOR LASER DEVICE AND DRIVING METHOD THEREOF
    10.
    发明申请
    SELF-OSCILLATING SEMICONDUCTOR LASER DEVICE AND DRIVING METHOD THEREOF 有权
    自激振荡半导体激光器件及其驱动方法

    公开(公告)号：US20110216797A1

    公开(公告)日：2011-09-08

    申请号：US13035585

    申请日：2011-02-25

    申请人： Hideki Watanabe ,  Masaru Kuramoto ,  Takao Miyajima ,  Hiroyuki Yokoyama

    发明人： Hideki Watanabe ,  Masaru Kuramoto ,  Takao Miyajima ,  Hiroyuki Yokoyama

    IPC分类号： H01S5/343 ,  H01S5/30

    CPC分类号： H01S5/3407 ,  H01S5/0601 ,  H01S5/30 ,  H01S5/343

    摘要： There is provided a driving method of a self-oscillating semiconductor laser device including a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer and a second compound semiconductor layer configuring an emission region and a saturable absorption region, are successively laminated, a second electrode formed on the second compound semiconductor layer, and a first electrode electrically connected to the first compound semiconductor layer. The second electrode is separated into a first portion to create a forward bias state by passing current to the first electrode via the emission region and a second portion to apply an electric field to the saturable absorption region by a separation groove. The current greater than a current value where kink is occurred in optical output-current characteristics is to be passed to the first portion of the second electrode.

    摘要翻译： 提供了一种自激振荡半导体激光器件的驱动方法，该器件包括具有第一导电类型并由GaN基化合物半导体构成的第一化合物半导体层，构成发光区域的第三化合物半导体层和第二化合物半导体层， 依次层叠可饱和吸收区域，形成在第二化合物半导体层上的第二电极和与第一化合物半导体层电连接的第一电极。 第二电极被分离为第一部分，以通过经由发射区域将电流传递到第一电极以产生正向偏置状态，以及第二部分，以通过分离槽将电场施加到可饱和吸收区域。 大于在光输出电流特性中发生扭结的当前值的电流将被传递到第二电极的第一部分。