利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

17 条记录 (耗时 0.028 秒)

    Plasma doping method and plasma doping apparatus for performing the same
    2.
    发明申请
    Plasma doping method and plasma doping apparatus for performing the same 审中-公开
    等离子体掺杂法和等离子体掺杂装置

    公开(公告)号：US20070077366A1

    公开(公告)日：2007-04-05

    申请号：US11542468

    申请日：2006-10-04

    申请人： Gyeong-Su Keum ,  Ji-Hyun Hur ,  Jai-Hyung Won ,  No-Hyun Huh ,  Jae-Joon Oh

    发明人： Gyeong-Su Keum ,  Ji-Hyun Hur ,  Jai-Hyung Won ,  No-Hyun Huh ,  Jae-Joon Oh

    IPC分类号： C23C14/00 ,  H05H1/24 ,  G21G5/00

    CPC分类号： C23C14/48 ,  H01L21/2236

    摘要： A method of doping ions into an object using plasma, including providing a doping gas between a first electrode and a second electrode, where an object is disposed between the first and the second electrodes, applying a first power to the first electrode and grounding the second electrode, exciting the doping gas to a plasma state, directing ions toward the object to be doped, applying a second power to the second electrode and grounding the first electrode, and counting a dose of the ions directed toward the second electrode, and an apparatus for performing the same.

    摘要翻译： 一种使用等离子体将离子掺杂到物体中的方法，包括在第一电极和第二电极之间提供掺杂气体，其中物体设置在第一和第二电极之间，向第一电极施加第一电力并将第二电极接地 将掺杂气体激发到等离子体状态，将离子引向待掺杂的物体，向第二电极施加第二功率并将第一电极接地，并计数朝向第二电极的离子的剂量;以及设备 执行相同。

    Plasma doping method and plasma doping apparatus for performing the same
    3.
    发明申请
    Plasma doping method and plasma doping apparatus for performing the same 审中-公开
    等离子体掺杂法和等离子体掺杂装置

    公开(公告)号：US20070087584A1

    公开(公告)日：2007-04-19

    申请号：US11542639

    申请日：2006-10-04

    申请人： Gyeong-Su Keum ,  Ji-Hyun Hur ,  Jai-Hyung Won ,  No-Hyun Huh ,  Jae-Joon Oh

    发明人： Gyeong-Su Keum ,  Ji-Hyun Hur ,  Jai-Hyung Won ,  No-Hyun Huh ,  Jae-Joon Oh

    IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L29/76 ,  H01L29/94 ,  H01L31/00

    CPC分类号： H01J37/32422 ,  H01J37/32412 ,  H01J37/32577 ,  H01L21/2236

    摘要： In a method of doping ions into an object, such as a substrate, using plasma, a doping gas may be provided between first and second electrodes in a chamber. An electric field may be formed between the first and the second electrodes to excite the doping gas to a plasma state. The electric field may be formed by applying a first power having a first positive electric potential and a second power having a second positive electric potential, the second positive electric potential being higher than the first positive electric potential. The electric field may be reversed in direction by blocking the second power from being applied to the second electrode. Accumulated ions on the substrate may be effectively neutralized by introducing electrons toward the substrate so that arcing generation may be prevented.

    摘要翻译： 在使用等离子体将离子掺杂到诸如衬底的物体的方法中，可以在腔室中的第一和第二电极之间提供掺杂气体。 可以在第一和第二电极之间形成电场，以将掺杂气体激发到等离子体状态。 电场可以通过施加具有第一正电位的第一电力和具有第二正电位的第二电力而形成，第二正电位高于第一正电位。 电场可以通过阻止第二功率施加到第二电极而在方向上反转。 可以通过向基板引入电子来有效地中和衬底上的累积离子，从而可以防止产生电弧。

    Gas supply device and apparatus for processing a substrate
    7.
    发明申请
    Gas supply device and apparatus for processing a substrate 审中-公开
    用于处理衬底的气体供应装置和装置

    公开(公告)号：US20070087296A1

    公开(公告)日：2007-04-19

    申请号：US11581111

    申请日：2006-10-16

    申请人： Woo-Seok Kim ,  Jae-Hyun Han ,  Joo-Pyo Hong ,  No-Hyun Huh

    发明人： Woo-Seok Kim ,  Jae-Hyun Han ,  Joo-Pyo Hong ,  No-Hyun Huh

    IPC分类号： F23C5/08

    CPC分类号： C23C16/45508 ,  C23C16/4558

    摘要： A gas supply device may include a first gas supply member that may be disposed in a chamber and around a substrate loaded in the chamber. The first gas supply member may include nozzles for providing a gas onto the substrate. A second gas supply member that may provide the gas supplied from at least one gas supply line to the first gas supply member.

    摘要翻译： 气体供应装置可以包括第一气体供应构件，其可以设置在腔室中并且围绕装载在腔室中的衬底。 第一气体供给构件可以包括用于在基底上提供气体的喷嘴。 第二气体供应构件，其可以将从至少一个气体供应管线供应的气体提供给第一气体供应构件。

    MULTI INDUCTIVELY COUPLED PLASMA REACTOR AND METHOD THEREOF
    8.
    发明申请
    MULTI INDUCTIVELY COUPLED PLASMA REACTOR AND METHOD THEREOF 审中-公开
    多电感耦合等离子体反应器及其方法

    公开(公告)号：US20110204023A1

    公开(公告)日：2011-08-25

    申请号：US12715522

    申请日：2010-03-02

    申请人： No-Hyun Huh ,  Gyoo-Dong Kim ,  Chang-Woo Nam ,  Sung-Min Park ,  Dae-Kyu Choi

    发明人： No-Hyun Huh ,  Gyoo-Dong Kim ,  Chang-Woo Nam ,  Sung-Min Park ,  Dae-Kyu Choi

    IPC分类号： C23F1/00 ,  C23F1/08

    CPC分类号： H01J37/32165 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32449

    摘要： Disclosed is a multi-inductively coupled plasma reactor and method thereof. In a multi-inductively coupled plasma reacting method, an etching method to increase a specific portion of a substrate to be processed includes etching a specific portion of a substrate to be processed; and depositing a passivation layer on a surface of the specific portion etched, wherein the etching and depositing steps are repeatedly proceeded, and one of both steps is executed when there is plasma formed by a central plasma source and a peripheral plasma source. According to the multi-inductively coupled plasma reactor and method thereof of the invention, it is possible that plasma is uniformly processed on the entire area of the substrate since the central plasma source and the peripheral source are provided separately. Further, it is possible to form an independent multiple plasma area without electrical interference in the plasma reactor using the interference prevention electrode grounded between the central plasma source and the peripheral plasma source. Further, the plasma formed by the central plasma source and the peripheral plasma source is used to deeply etch a specific portion of the substrate to be processed.

    摘要翻译： 公开了一种多电感耦合等离子体反应器及其方法。 在多电感耦合等离子体反应方法中，用于增加要处理的衬底的特定部分的蚀刻方法包括蚀刻要处理的衬底的特定部分; 以及在蚀刻的特定部分的表面上沉积钝化层，其中反复进行蚀刻和沉积步骤，并且当存在由中心等离子体源和外围等离子体源形成的等离子体时，执行两个步骤之一。 根据本发明的多电感耦合等离子体反应器及其方法，由于中心等离子体源和外围源分别设置，因此可以在衬底的整个区域上均匀地处理等离子体。 此外，可以使用在中心等离子体源和外围等离子体源之间接地的防干扰电极在等离子体反应器中形成无电干扰的独立多等离子体区域。 此外，由中央等离子体源和外围等离子体源形成的等离子体用于深刻蚀刻待处理衬底的特定部分。

    Etching method
    9.
    发明授权
    Etching method 有权
    蚀刻方法

    公开(公告)号：US07497963B2

    公开(公告)日：2009-03-03

    申请号：US11032393

    申请日：2005-01-10

    申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    IPC分类号： B44C1/22

    CPC分类号： H01L21/67063 ,  H01L21/31116

    摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

    摘要翻译： 在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。 因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。 结果，在基板的表面上不会发生不均匀的蚀刻。 此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。 因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。 结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

    Etching method
    10.
    发明申请
    Etching method 有权
    蚀刻方法

    公开(公告)号：US20050153553A1

    公开(公告)日：2005-07-14

    申请号：US11032393

    申请日：2005-01-10

    申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/768 ,  H01L23/522

    CPC分类号： H01L21/67063 ,  H01L21/31116

    摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

    摘要翻译： 在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。 因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。 结果，在基板的表面上不会发生不均匀的蚀刻。 此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。 因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。 结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。