Abstract:
This charged-particle beam device changes conditions for combining an intensity ratio between upper and lower deflectors and rotation angles of the deflectors in multiple ways when obtaining images having different pixel sizes in the vertical and horizontal directions. Then, the charged-particle beam device determines an optimal intensity ratio between the upper and lower deflectors and rotation angles of the deflectors on the basis of variations in size value measured in the larger pixel size direction (Y-direction) of the image. As a result, it is possible to extend the field of view in the Y-direction while reducing deflection aberrations when measuring at high precision in the X-direction.
Abstract:
An error of an outline point due to a brightness fluctuation cannot be corrected by a simple method such as a method of adding a certain amount of offset. However, in recent years as the miniaturization of the pattern represented by a resist pattern has progressed, it has been difficult to appropriately determine a region that serves as a reference. An outline of the resist pattern is extracted from an image of the resist pattern obtained by a charged particle beam apparatus in consideration of influence of the brightness fluctuation. That is, a plurality of brightness profiles in the vicinity of edge points configuring the outline are obtained and an evaluation value of a shape of the brightness profile in the vicinity of a specific edge is obtained based on the plurality of brightness profiles, and the outline of a specific edge point is corrected, based on the evaluation value.
Abstract:
In order to provide an aberration correction system that realizes a charged particle beam of which the anisotropy is reduced or eliminated on a sample surface even in the case where there is magnetic interference between pole stages of an aberration corrector, an correction system includes a line cross position control device (209) which controls a line cross position in the aberration corrector of the charged particle beam so that a designed value and an actually measured value of the line cross position are equal to each other, an image shift amount extraction device (210), and a feedback determination device (211) which determines whether or not changing an excitation amount of the aberration corrector is necessary whether or not changing an excitation amount is necessary from an extracted image shift amount.
Abstract:
To improve the efficiency of generation of chromatic aberrations of an energy filter for reducing energy distribution. Mounted are an energy filter for primary electrons, the energy filter having a beam slit and a pair of a magnetic deflector and an electrostatic deflector that are superimposed with each other. An electron lens is arranged between the beam slit and the pair of the magnetic deflector and the electrostatic deflector.
Abstract:
To improve the efficiency of generation of chromatic aberrations of an energy filter for reducing energy distribution. Mounted are an energy filter for primary electrons, the energy filter having a beam slit and a pair of a magnetic deflector and an electrostatic deflector that are superimposed with each other. An electron lens is arranged between the beam slit and the pair of the magnetic deflector and the electrostatic deflector.
Abstract:
The objective of the invention is to provide a measuring method that can determine pattern contours and dimensions with high precision even if an object to be measured shrinks due to electron beam radiations. In order to achieve this objective, a method, which performs measurements by irradiating an electron beam onto a sample having a pattern formed on a primary coating thereof, prepares an SEM image and contour of the pattern (S201, S202), material parameters of the pattern part and primary coating part of the sample (S203, S204), and a beam condition in irradiating the electron beam onto the sample (S205), and uses these prepared things to calculate a pattern shape or dimensions before the irradiation of the electron beam (S206).
Abstract:
A scanning electron microscope according to the present invention includes: an electron source that produces an electron beam; a trajectory dispersion unit that disperses the trajectory of an electron beam of electrons with a different energy value; a selection slit plate having a selection slit that selects the energy range of the dispersed electron beam; and a transmittance monitoring unit that monitors the transmittance of an electron beam, which is being transmitted through the selection slit. Accordingly, there can be provided a scanning electron microscope equipped with an energy filter that implements a stable reduction in energy distribution.
Abstract:
An error of an outline point due to a brightness fluctuation cannot be corrected by a simple method such as a method of adding a certain amount of offset. However, in recent years as the miniaturization of the pattern represented by a resist pattern has progressed, it has been difficult to appropriately determine a region that serves as a reference. An outline of the resist pattern is extracted from an image of the resist pattern obtained by a charged particle beam apparatus in consideration of influence of the brightness fluctuation. That is, a plurality of brightness profiles in the vicinity of edge points configuring the outline are obtained and an evaluation value of a shape of the brightness profile in the vicinity of a specific edge is obtained based on the plurality of brightness profiles, and the outline of a specific edge point is corrected, based on the evaluation value.
Abstract:
Provided are an aberration corrector that reduces irregularity of a magnetic field of a multipole to obtain an image of high resolution and a charged particle beam apparatus using the same. The aberration corrector includes a plurality of magnetic field type poles, a ring that magnetically connects the plurality of poles with one another and an adjustment member disposed between the pole and the ring to adjust a spacing between the pole and the ring per pole.
Abstract:
A charged particle beam device using a multi-pole type aberration corrector includes: a charged particle source which generates a primary charged particle beam; an aberration correction optical system which corrects aberrations of the primary charged particle beam; a detection unit which detects a secondary charged particle generated from a sample irradiated with the primary charged particle beam whose aberrations have been corrected; an image forming unit which forms a charged particle image of the sample from a signal obtained by detecting the secondary charged particle; an aberration correction amount calculation unit which processes the charged particle image, separates aberrations having different symmetries, selects an aberration to be preferentially corrected from the separated aberrations, and calculates a correction amount of the aberration correction optical system; and an aberration correction optical system control unit which controls the aberration correction optical system based on the calculated correction amount.