公开(公告)号：US20190074159A1

公开(公告)日：2019-03-07

申请号：US16115287

申请日：2018-08-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Noritsugu Takahashi ,  Yasunari Sohda ,  Akira Ikegami ,  Yuta Kawamoto

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/141 ,  H01J37/147

CPC classification number: H01J37/28 ,  H01J37/141 ,  H01J37/1471 ,  H01J37/1475 ,  H01J37/1477 ,  H01J37/244 ,  H01J2237/1504 ,  H01J2237/1508 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/2449 ,  H01J2237/248 ,  H01J2237/2817

Abstract: The present invention enlarges a range of movement of field of view by beam deflection with a simple deflector configuration and suppresses deterioration of a signal electron detection rate caused by the beam deflection. A scanning electron microscope according to the present invention is provided with a first deflection field setting module that sets plural deflectors to move a scanning area on a specimen by a primary electron beam to a position deviated from an axis extended from an electron source toward the center of an objective lens and a second deflection field setting module that sets the plural deflectors so that trajectories of signal electrons are corrected without changing the scanning area set by the first deflection field setting module. The control unit controls the plural deflectors by adding a setting value set by the second deflection field setting module to a setting value set by the first deflection field setting module.

公开(公告)号：US09644955B2

公开(公告)日：2017-05-09

申请号：US14364392

申请日：2012-11-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Tasuku Yano ,  Yasunari Sohda ,  Muneyuki Fukuda ,  Katsunori Onuki ,  Hajime Kawano ,  Naomasa Suzuki

IPC: H01J37/28 ,  G01B15/00 ,  H01J37/21 ,  H01L21/66 ,  H01J37/244

CPC classification number: G01B15/00 ,  G01B2210/56 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/20 ,  H01J2237/281 ,  H01L22/12

Abstract: A scanning electron beam device having: a deflector (5) for deflecting an electron beam (17) emitted from an electron source (1); an objective lens (7) for causing the electron beam to converge; a retarding electrode; a stage (9) for placing a wafer (16); and a controller (15); wherein the stage can be raised and lowered. In the low acceleration voltage region, the controller performs rough adjustment and fine adjustment of the focus in relation to the variation in the height of the wafer using electromagnetic focusing performed through excitation current adjustment of the objective lens. In the high acceleration voltage region, the controller performs rough adjustment of the focus in relation to the variation in the height of the wafer by mechanical focusing performed through raising and lowering of the stage, and performs fine adjustment by electrostatic focusing performed through adjustment of the retarding voltage. It thereby becomes possible to provide a scanning electron beam device that measures, in a highly accurate manner, both the upper part and the bottom part of a groove or a hole having a high aspect ratio.

公开(公告)号：US20150076362A1

公开(公告)日：2015-03-19

申请号：US14396769

申请日：2013-04-18

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasunari Sohda ,  Tasuku Yano ,  Muneyuki Fukuda ,  Noritsugu Takahashi ,  Hajime Kawano ,  Hiroyuki Ito

IPC: H01J37/141 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/141 ,  H01J37/147 ,  H01J37/1475 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/1405 ,  H01J2237/1532 ,  H01J2237/1536

Abstract: In order to provide a charged particle beam apparatus enabling reduction of deflecting coma aberration in cases such as where wide field-of-view scanning is carried out, a charged particle beam apparatus is provided with an electromagnetic objective lens and a stage on which a sample is placed, wherein the electromagnetic objective lens is provided with the following: a plurality of magnetic paths; an objective lens coil; an opening disposed so as to face the sample; an inner lens deflector disposed more on the objective lens coil side than the end of the opening.

Abstract translation: 为了提供在诸如进行宽视场扫描的情况下能够减少偏转彗形像差的带电粒子束装置，带电粒子束装置设置有电磁物镜和在其上具有样品 放置，其中电磁物镜设置有：多个磁路; 物镜线圈; 设置成面向样品的开口; 设置在比开口端部更靠物镜线圈侧的内透镜偏转器。

公开(公告)号：US10559450B2

公开(公告)日：2020-02-11

申请号：US16115287

申请日：2018-08-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Noritsugu Takahashi ,  Yasunari Sohda ,  Akira Ikegami ,  Yuta Kawamoto

IPC: H01J37/141 ,  H01J37/04 ,  H01J37/28 ,  H01J37/244 ,  H01J37/147

Abstract: The present invention enlarges a range of movement of field of view by beam deflection with a simple deflector configuration and suppresses deterioration of a signal electron detection rate caused by the beam deflection. A scanning electron microscope according to the present invention is provided with a first deflection field setting module that sets plural deflectors to move a scanning area on a specimen by a primary electron beam to a position deviated from an axis extended from an electron source toward the center of an objective lens and a second deflection field setting module that sets the plural deflectors so that trajectories of signal electrons are corrected without changing the scanning area set by the first deflection field setting module. The control unit controls the plural deflectors by adding a setting value set by the second deflection field setting module to a setting value set by the first deflection field setting module.

公开(公告)号：US09520266B2

公开(公告)日：2016-12-13

申请号：US14455878

申请日：2014-08-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Kaori Shirahata ,  Yasunari Sohda ,  Makoto Sakakibara ,  Daisuke Bizen ,  Hajime Kawano ,  Hideyuki Kazumi

IPC: H01J37/244 ,  H01J37/22 ,  H01J37/10 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/244 ,  G01B2210/56 ,  H01J37/10 ,  H01J37/147 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/2448 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: Pattern critical dimension measurement equipment includes an electron source configured to generate a primary electron beam, a deflector configured to deflect the primary electron beam emitted from the electron source, a focusing lens configured to focus the primary electron beam deflected by the deflector, a decelerator configured to decelerate the primary electron beam that irradiates the sample, a first detector located between the electron source and the focusing lens, the first detector being configured to detect electrons at part of azimuths of electrons generated from the sample upon irradiation of the sample with the primary electron beam, and a second detector located between the electron source and the first detector, the second detector being configured to detect electrons at substantially all azimuths of the electrons generated from the sample.

Abstract translation: 图案关键尺寸测量设备包括被配置为产生一次电子束的电子源，被配置为使从电子源发射的一次电子束偏转的偏转器，配置成聚焦由偏转器偏转的一次电子束的聚焦透镜， 使照射样品的一次电子束减速，位于电子源和聚焦透镜之间的第一检测器，第一检测器被配置为在样品照射样品时与主要样品一起检测从样品产生的电子方位角的一部分处的电子 电子束和位于电子源和第一检测器之间的第二检测器，第二检测器被配置为在从样品产生的电子的基本上所有的方位角处检测电子。

公开(公告)号：US09443695B2

公开(公告)日：2016-09-13

申请号：US14759782

申请日：2013-12-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeyoshi Ohashi ,  Yasunari Sohda ,  Noritsugu Takahashi ,  Hajime Kawano ,  Osamu Komuro

IPC: H01J37/28 ,  H01J37/21 ,  H01J37/22 ,  H01J37/20 ,  H01J37/147

CPC classification number: H01J37/222 ,  H01J37/1472 ,  H01J37/1475 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/1536 ,  H01J2237/221 ,  H01J2237/2448 ,  H01J2237/2806 ,  H01J2237/2809 ,  H01J2237/2817

Abstract: This charged-particle beam device changes conditions for combining an intensity ratio between upper and lower deflectors and rotation angles of the deflectors in multiple ways when obtaining images having different pixel sizes in the vertical and horizontal directions. Then, the charged-particle beam device determines an optimal intensity ratio between the upper and lower deflectors and rotation angles of the deflectors on the basis of variations in size value measured in the larger pixel size direction (Y-direction) of the image. As a result, it is possible to extend the field of view in the Y-direction while reducing deflection aberrations when measuring at high precision in the X-direction.

Abstract translation: 当获得在垂直和水平方向上具有不同像素尺寸的图像时，该带电粒子束装置改变用于以多种方式组合上偏导器和下偏转器之间的强度比和偏转器的旋转角度的条件。 然后，带电粒子束装置基于在图像的较大像素尺寸方向（Y方向）上测量的尺寸值的变化，确定偏转器的上下偏转器之间的最佳强度比和偏转器的旋转角度。 结果，可以在X方向上以高精度测量的同时在Y方向上延伸视场，同时减少偏转像差。

公开(公告)号：US09312091B2

公开(公告)日：2016-04-12

申请号：US14396769

申请日：2013-04-18

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasunari Sohda ,  Tasuku Yano ,  Muneyuki Fukuda ,  Noritsugu Takahashi ,  Hajime Kawano ,  Hiroyuki Ito

IPC: G21K5/04 ,  H01J37/141 ,  H01J37/153 ,  H01J37/28 ,  H01J37/147

CPC classification number: H01J37/141 ,  H01J37/147 ,  H01J37/1475 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/1405 ,  H01J2237/1532 ,  H01J2237/1536

Abstract: In order to provide a charged particle beam apparatus enabling reduction of deflecting coma aberration in cases such as where wide field-of-view scanning is carried out, a charged particle beam apparatus is provided with an electromagnetic objective lens and a stage on which a sample is placed, wherein the electromagnetic objective lens is provided with the following: a plurality of magnetic paths; an objective lens coil; an opening disposed so as to face the sample; an inner lens deflector disposed more on the objective lens coil side than the end of the opening.

Abstract translation: 为了提供在诸如进行宽视场扫描的情况下能够减少偏转彗形像差的带电粒子束装置，带电粒子束装置设置有电磁物镜和在其上具有样品 放置，其中电磁物镜设置有：多个磁路; 物镜线圈; 设置成面向样品的开口; 设置在比开口端部更靠物镜线圈侧的内透镜偏转器。

公开(公告)号：US10134558B2

公开(公告)日：2018-11-20

申请号：US15123828

申请日：2015-02-04

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasunari Sohda ,  Takeyoshi Ohashi ,  Takafumi Miwa ,  Noritsugu Takahashi ,  Hajime Kawano

IPC: H01J37/05 ,  H01J37/29 ,  H01J37/21 ,  H01J37/28 ,  H01J37/145 ,  H01J37/26

Abstract: A scanning electron microscope according to the present invention includes: an electron source that produces an electron beam; a trajectory dispersion unit that disperses the trajectory of an electron beam of electrons with a different energy value; a selection slit plate having a selection slit that selects the energy range of the dispersed electron beam; and a transmittance monitoring unit that monitors the transmittance of an electron beam, which is being transmitted through the selection slit. Accordingly, there can be provided a scanning electron microscope equipped with an energy filter that implements a stable reduction in energy distribution.

公开(公告)号：US09960006B2

公开(公告)日：2018-05-01

申请号：US15310438

申请日：2015-04-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Noritsugu Takahashi ,  Yasunari Sohda ,  Wataru Mori ,  Yuko Sasaki ,  Hajime Kawano

IPC: G01N23/22 ,  G01N23/225 ,  G21K7/00 ,  H01J37/28 ,  H01J37/05 ,  H01J37/147 ,  H01J37/153 ,  H01J37/21 ,  H01J37/244 ,  H01J37/26 ,  H01J37/12

CPC classification number: H01J37/05 ,  H01J37/12 ,  H01J37/147 ,  H01J37/153 ,  H01J37/21 ,  H01J37/244 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/1532 ,  H01J2237/2448

Abstract: A charged-particle-beam device used for measuring the dimensions, etc., of fine circuit patterns in a semiconductor manufacturing process, wherein corrections are made in the defocusing and astigmatism generated during changes in the operating conditions of a Wien filter acting as a deflector of secondary signals such as secondary electrons, and the display dimensions of obtained images are kept constant. In the charged-particle-beam device, the Wien filter (23) is arranged between a detector and a lens (11) arranged on the test-sample side among two stages of lenses for converging a charged-particle beam, and a computing device (93) is provided for the interlocked control of the Wien filter (23) and a lens (12) arranged on the charged-particle-source side among the two stages of lenses.

公开(公告)号：US09799483B2

公开(公告)日：2017-10-24

申请号：US15306977

申请日：2015-04-21

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tomoyasu Shojo ,  Hajime Kawano ,  Yasunari Sohda

IPC: H01J37/28 ,  H01J37/09 ,  G01N23/225 ,  H01J37/12 ,  H01J37/10 ,  H01J37/147

CPC classification number: H01J37/12 ,  H01J37/09 ,  H01J37/10 ,  H01J37/147 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/103 ,  H01J2237/21 ,  H01J2237/24592 ,  H01J2237/28 ,  H01J2237/2809 ,  H01J2237/2814 ,  H01J2237/2817

Abstract: In the present invention, a charged particle beam device has a charged particle source (1), a first condenser lens (4) arranged downstream from the charged particle source (1), an aperture (5) arranged downstream from the first condenser lens (4), and a second condenser lens (6) arranged downstream from the aperture (5), wherein, when a sample (12) is to be irradiated at a second charged particle beam amount which is greater than a first charged particle beam amount, the first and second condenser lenses are controlled such that a charged particle beam is formed downstream from the aperture (5), and such that the focal point of the second condenser lens does not vary between the first charged particle beam amount and the second charged particle beam amount.