公开(公告)号：US20110244666A1

公开(公告)日：2011-10-06

申请号：US13080288

申请日：2011-04-05

申请人： Ha-Na Kim ,  Gyungjin Min ,  Chulho Shin ,  Sukho Joo ,  Han Geun Yu ,  Yeonghun Han

发明人： Ha-Na Kim ,  Gyungjin Min ,  Chulho Shin ,  Sukho Joo ,  Han Geun Yu ,  Yeonghun Han

IPC分类号： H01L21/302 ,  H01L21/28 ,  H01L21/31

CPC分类号： H01L27/11578 ,  H01L21/033 ,  H01L21/0337 ,  H01L27/11548 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11575

摘要： Methods of manufacturing stair-type structures and methods of manufacturing nonvolatile memory devices using the same. Methods of manufacturing stair-type structures may include forming a plurality of thin layers stacked in plate shapes, forming a mask on an utmost thin layer, patterning the utmost layer using the mask as an etch mask, escalating a width of the mask and etching each of the thin layers at a different width of the mask to form a stair-type structure of the thin layers. Control gates may be formed into the stair-type structures using the methods of manufacturing stair-type structures.

摘要翻译： 制造楼梯型结构的方法和制造使用其的非易失性存储装置的制造方法。 制造阶梯型结构的方法可以包括形成多个以板形形式堆叠的薄层，在最薄层上形成掩模，使用掩模将最大层图案化为蚀刻掩模，增加掩模的宽度并蚀刻每个 在薄膜的不同宽度处的薄层，以形成薄层的阶梯型结构。 可以使用制造楼梯型结构的方法将控制门形成为楼梯型结构。

公开(公告)号：US20090140132A1

公开(公告)日：2009-06-04

申请号：US12323783

申请日：2008-11-26

申请人： Do-Haing Lee ,  Ha-Na Kim ,  Yong-Jin Kim

发明人： Do-Haing Lee ,  Ha-Na Kim ,  Yong-Jin Kim

IPC分类号： H05H3/02

CPC分类号： H01J37/30 ,  H01J2237/0041 ,  H01J2237/04756 ,  H01J2237/20 ,  H01J2237/31

摘要： An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.

摘要翻译： 提供了一种使用中和束来处理衬底的设备和方法。 衬底处理装置包括被配置为形成离子源的离子源生成装置。 离子提取装置被配置为从离子源提取和加速离子。 离子中和装置被配置为将从离子提取装置提取和加速的离子转化成中和的束。 从离子提取装置提取和加速的离子的剩余部分不被转换成中和的束。 衬底支撑件被配置为支撑衬底，使得中和的光束被引向衬底支撑件。 衬底电源被配置为向衬底支撑件施加电压，使得未转换成中和束的离子的剩余部分通过衬底的施加电压被引导离开衬底支撑。

公开(公告)号：US09455268B2

公开(公告)日：2016-09-27

申请号：US14520751

申请日：2014-10-22

申请人： Jung-Ik Oh ,  Daehyun Jang ,  Ha-Na Kim ,  Kyoungsub Shin

发明人： Jung-Ik Oh ,  Daehyun Jang ,  Ha-Na Kim ,  Kyoungsub Shin

IPC分类号： H01L25/00 ,  H01L27/11 ,  H01L45/00 ,  H01L27/115 ,  H01L25/065

CPC分类号： H01L21/0274 ,  H01L21/30604 ,  H01L21/3085 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11582 ,  H01L27/2481 ,  H01L45/122 ,  H01L45/1253 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a staircase-shaped connection structure of a three-dimensional semiconductor device. The device includes an electrode structure on a substrate, the electrode structure including an upper staircase region, a lower staircase region, and a buffer region therebetween. The electrode structure includes horizontal electrodes sequentially stacked on the substrate, the horizontal electrodes include a plurality of pad regions constituting a staircase structure of each of the upper and lower staircase regions, and the buffer region has a width that is larger than that of each of the pad regions.

摘要翻译： 提供了三维半导体器件的阶梯状连接结构。 该装置包括在基板上的电极结构，电极结构包括上层阶段区域，下层阶梯区域和它们之间的缓冲区域。 电极结构包括依次堆叠在基板上的水平电极，水平电极包括构成上下阶梯区域中的每一个的阶梯结构的多个焊盘区域，并且缓冲区域的宽度大于 垫区域。

公开(公告)号：US09087790B2

公开(公告)日：2015-07-21

申请号：US13949600

申请日：2013-07-24

申请人： Jung-Ik Oh ,  Daehyun Jang ,  Ha-Na Kim ,  Seongsoo Lee

发明人： Jung-Ik Oh ,  Daehyun Jang ,  Ha-Na Kim ,  Seongsoo Lee

IPC分类号： H01L21/311 ,  H01L21/308 ,  H01L27/115

CPC分类号： H01L21/308 ,  H01L21/31144 ,  H01L27/11529 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

摘要： According to example embodiments of inventive concepts, a method of fabricating a 3D semiconductor device may include: forming a stack structure including a plurality of horizontal layers sequentially stacked on a substrate including a cell array region and a contact region; forming a first mask pattern covering the cell array region and defining openings extending in one direction over the contact region; performing a first etching process with a first etch-depth using the first mask pattern as an etch mask on the stack structure; forming a second mask pattern covering the cell array region and exposing a part of the contact region; and performing a second etching process with a second etch-depth using the second mask pattern as an etch mask structure on the stack structure. The second etch-depth may be greater than the first etch-depth.

摘要翻译： 根据发明构思的示例性实施例，制造3D半导体器件的方法可以包括：形成包括依次层叠在包括单元阵列区域和接触区域的基板上的多个水平层的堆叠结构; 形成覆盖所述单元阵列区域并限定在所述接触区域上沿一个方向延伸的开口的第一掩模图案; 使用所述第一掩模图案作为所述堆叠结构上的蚀刻掩模，利用第一蚀刻深度执行第一蚀刻工艺; 形成覆盖所述单元阵列区域并露出所述接触区域的一部分的第二掩模图案; 以及使用所述第二掩模图案作为所述堆叠结构上的蚀刻掩模结构，用第二蚀刻深度执行第二蚀刻工艺。 第二蚀刻深度可以大于第一蚀刻深度。

公开(公告)号：US20070039470A1

公开(公告)日：2007-02-22

申请号：US11329913

申请日：2006-01-10

申请人： Ha-Na Kim ,  Dong-Seok Ham ,  Yo-Han Ahn ,  Chang-Min Cho ,  Kwang-Min Choi

发明人： Ha-Na Kim ,  Dong-Seok Ham ,  Yo-Han Ahn ,  Chang-Min Cho ,  Kwang-Min Choi

IPC分类号： B01D47/00

CPC分类号： B01D47/14 ,  B01D53/18

摘要： Water discharged at a top region of an eliminator flows, e.g., by gravity into, along, and between the portions of the eliminator while an air flow also travels therein, e.g., horizontally and transverse to the water flow. As the air flow encounters the water, e.g., strikes portions of the eliminator having water flowing downward therealong or encounters water falling between portions of the eliminator, contaminants pass from the air flow to the water flow. The air flow, relieved of certain contaminants, continues onward and the water flow collects at the bottom of the eliminator for filtration and re-circulation through the eliminator.

摘要翻译： 在消除器的顶部区域排出的水例如通过重力流入消除器的部分之间，并且在消除器的部分之间流动，同时气流也在其中行进，例如水平和横向于水流。 当空气流遇到水时，例如撞击具有向下流动的水的消除器的部分或遇到在消除器的部分之间落下的水，污染物从空气流传递到水流。 释放某些污染物的空气流继续向前，水流收集在消除器的底部，以过滤并通过消除器再循环。

公开(公告)号：US08089042B2

公开(公告)日：2012-01-03

申请号：US12323783

申请日：2008-11-26

申请人： Do-Haing Lee ,  Ha-Na Kim ,  Yong-Jin Kim

发明人： Do-Haing Lee ,  Ha-Na Kim ,  Yong-Jin Kim

IPC分类号： H05H3/02

CPC分类号： H01J37/30 ,  H01J2237/0041 ,  H01J2237/04756 ,  H01J2237/20 ,  H01J2237/31

摘要： An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.

摘要翻译： 提供了一种使用中和束来处理衬底的设备和方法。 衬底处理装置包括被配置为形成离子源的离子源生成装置。 离子提取装置被配置为从离子源提取和加速离子。 离子中和装置被配置为将从离子提取装置提取和加速的离子转化成中和的束。 从离子提取装置提取和加速的离子的剩余部分不被转换成中和的束。 衬底支撑件被配置为支撑衬底，使得中和的光束被引向衬底支撑件。 衬底电源被配置为向衬底支撑件施加电压，使得未转换成中和束的离子的剩余部分通过衬底的施加电压被引导离开衬底支撑。

公开(公告)号：US09543307B2

公开(公告)日：2017-01-10

申请号：US14792114

申请日：2015-07-06

申请人： Ha-Na Kim ,  Dae-Hyun Jang ,  Jung-Ik Oh

发明人： Ha-Na Kim ,  Dae-Hyun Jang ,  Jung-Ik Oh

IPC分类号： H01L21/02 ,  H01L21/48 ,  H01L27/105 ,  H01L27/02

CPC分类号： H01L27/1052 ,  H01L21/481 ,  H01L21/4846 ,  H01L21/486 ,  H01L27/0207 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

摘要： A method of manufacturing a vertical memory device includes: providing a substrate including a cell array region and a peripheral circuit region; forming a mold structure in the cell array region; forming a mold protection film in a portion of the cell array region and the peripheral circuit region, the mold protection film contacting the mold structure; forming an opening for a common source line that passes through the mold structure and extends in a first direction perpendicular to a top surface of the substrate; forming a peripheral circuit contact hole that passes through the mold protection film and extends in the first direction in the peripheral circuit region; and simultaneously forming a first contact plug and a second contact plug, respectively, in the opening for the common source line and in the peripheral circuit contact hole.

摘要翻译： 制造垂直存储器件的方法包括：提供包括单元阵列区域和外围电路区域的衬底; 在电池阵列区域中形成模具结构; 在电池阵列区域和外围电路区域的一部分中形成保护膜，模具保护膜与模具结构接触; 形成用于通过所述模具结构并沿垂直于所述基板的顶表面的第一方向延伸的共同源极线的开口; 形成通过所述保护膜并在所述外围电路区域沿所述第一方向延伸的外围电路接触孔; 同时在公共源极线的开口和外围电路接触孔中分别形成第一接触插塞和第二接触插塞。

公开(公告)号：US20150228623A1

公开(公告)日：2015-08-13

申请号：US14520751

申请日：2014-10-22

申请人： JUNG-IK OH ,  Daehyun Jang ,  Ha-Na Kim ,  Kyoungsub Shin

发明人： JUNG-IK OH ,  Daehyun Jang ,  Ha-Na Kim ,  Kyoungsub Shin

IPC分类号： H01L25/065 ,  H01L27/115 ,  H01L25/00 ,  H01L45/00

CPC分类号： H01L21/0274 ,  H01L21/30604 ,  H01L21/3085 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11582 ,  H01L27/2481 ,  H01L45/122 ,  H01L45/1253 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a staircase-shaped connection structure of a three-dimensional semiconductor device. The device includes an electrode structure on a substrate, the electrode structure including an upper staircase region, a lower staircase region, and a buffer region therebetween. The electrode structure includes horizontal electrodes sequentially stacked on the substrate, the horizontal electrodes include a plurality of pad regions constituting a staircase structure of each of the upper and lower staircase regions, and the buffer region has a width that is larger than that of each of the pad regions.

摘要翻译： 提供了三维半导体器件的阶梯状连接结构。 该装置包括在基板上的电极结构，电极结构包括上层阶段区域，下层阶梯区域和它们之间的缓冲区域。 电极结构包括依次堆叠在基板上的水平电极，水平电极包括构成上下阶梯区域中的每一个的阶梯结构的多个焊盘区域，并且缓冲区域的宽度大于 垫区域。

公开(公告)号：US08450680B2

公开(公告)日：2013-05-28

申请号：US13306364

申请日：2011-11-29

申请人： Do-Haing Lee ,  Ha-Na Kim ,  Yong-Jin Kim

发明人： Do-Haing Lee ,  Ha-Na Kim ,  Yong-Jin Kim

IPC分类号： H05H3/02

CPC分类号： H01J37/30 ,  H01J2237/0041 ,  H01J2237/04756 ,  H01J2237/20 ,  H01J2237/31

摘要： An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.

摘要翻译： 提供了一种使用中和束来处理衬底的设备和方法。 衬底处理装置包括被配置为形成离子源的离子源生成装置。 离子提取装置被配置为从离子源提取和加速离子。 离子中和装置被配置为将从离子提取装置提取和加速的离子转化成中和的束。 从离子提取装置提取和加速的离子的剩余部分不被转换成中和的束。 衬底支撑件被配置为支撑衬底，使得中和的光束被引向衬底支撑件。 衬底电源被配置为向衬底支撑件施加电压，使得未转换成中和束的离子的剩余部分通过衬底的施加电压被引导离开衬底支撑。

公开(公告)号：US20120068058A1

公开(公告)日：2012-03-22

申请号：US13306364

申请日：2011-11-29

申请人： Do-Haing Lee ,  Ha-Na Kim ,  Yong-Jin Kim

发明人： Do-Haing Lee ,  Ha-Na Kim ,  Yong-Jin Kim

IPC分类号： H05H3/02

CPC分类号： H01J37/30 ,  H01J2237/0041 ,  H01J2237/04756 ,  H01J2237/20 ,  H01J2237/31

摘要： An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.

摘要翻译： 提供了一种使用中和束来处理衬底的设备和方法。 衬底处理装置包括被配置为形成离子源的离子源生成装置。 离子提取装置被配置为从离子源提取和加速离子。 离子中和装置被配置为将从离子提取装置提取和加速的离子转化成中和的束。 从离子提取装置提取和加速的离子的剩余部分不被转换成中和的束。 衬底支撑件被配置为支撑衬底，使得中和的光束被引向衬底支撑件。 衬底电源被配置为向衬底支撑件施加电压，使得未转换成中和束的离子的剩余部分通过衬底的施加电压被引导离开衬底支撑。