公开(公告)号：US5777952A

公开(公告)日：1998-07-07

申请号：US678267

申请日：1996-07-11

申请人： Hajime Nishimura ,  Atsushi Ichikawa ,  Akio Yabe ,  Yuji Yokoyama

发明人： Hajime Nishimura ,  Atsushi Ichikawa ,  Akio Yabe ,  Yuji Yokoyama

IPC分类号： G11B11/10 ,  G11B11/105 ,  G11B11/00

CPC分类号： G11B11/10558 ,  G11B11/1056

摘要： A bias magnet unit has a permanent magnet that applies a bias magnetic field to an optical spot on a magneto-optical disk. A driving coil rotates the magnet in order to change a polarity of the bias magnetic field. A sensor detects the intensity and polarity of the bias magnetic field to confirm the rotational position of the magnet after it has been rotated. A linkage structure that is connected between a magnet holder of the magnet unit and the housing has arms that drive the magnet unit between two positions, one in which the magneto-optical disk cartridge can be inserted into the device and another in which the disk is loaded onto the spindle motor for recording/playback. Overall, the components of the device cooperate structurally to provide a relatively thin device structure having low power consumption.

摘要翻译： 偏置磁体单元具有向磁光盘上的光点施加偏置磁场的永磁体。 驱动线圈使磁体旋转，以改变偏磁场的极性。 传感器检测偏磁场的强度和极性，以确认磁体旋转后的旋转位置。 连接在磁体单元的磁体保持器和壳体之间的连接结构具有在两个位置之间驱动磁体单元的臂，其中可以将磁光盘盒插入到该装置中，其中磁盘 加载到主轴电机上进行记录/播放。 总体而言，该装置的部件在结构上配合以提供具有低功耗的较薄的装置结构。

公开(公告)号：US10020511B2

公开(公告)日：2018-07-10

申请号：US14426799

申请日：2012-09-10

申请人： Tatsuya Hashimoto ,  Keisuke Ohara ,  Yuji Yokoyama ,  Yusuke Fukumoto

发明人： Tatsuya Hashimoto ,  Keisuke Ohara ,  Yuji Yokoyama ,  Yusuke Fukumoto

IPC分类号： H01M4/62 ,  H01M10/052 ,  H01M4/13 ,  H01M4/139

CPC分类号： H01M4/62 ,  H01M4/13 ,  H01M4/139 ,  H01M4/621 ,  H01M4/622 ,  H01M10/052 ,  H01M2220/20 ,  Y02E60/122 ,  Y02T10/7011

摘要： This invention provides a lithium secondary battery that comprises a positive electrode comprising a positive electrode active material layer and a negative electrode comprising a negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are placed to face each other. The negative electrode active material layer has an area A comprising a non-positive-electrode-facing portion that does not face the positive electrode active material layer. The area A comprises a negative electrode active material, a hot-melt binder and a temperature-sensitive thickener. The hot-melt binder has a melting point and the temperature-sensitive thickener has a gelation temperature both in a range of 45° C. to 100° C.

公开(公告)号：US08562367B2

公开(公告)日：2013-10-22

申请号：US13270476

申请日：2011-10-11

申请人： Yuji Yokoyama

发明人： Yuji Yokoyama

IPC分类号： H01R13/62

CPC分类号： H01R12/714 ,  G01R1/0466 ,  G01R31/2863 ,  H01R13/62933

摘要： A socket for electrical part mounted on the wiring substrate to accommodate an electrical part. The present invention comprises a socket body, a floating plate and a holding structure. The socket body has a contact pin unit comprising a unit body in which the plural contact pins are mounted. The floating plate is mounted on upper side of the unit body to accommodate the electrical part, and comprises through holes into which the upper side contact portions of contact pins are inserted. The holding structure holds the floating plate in a descended state when the socket for the electrical part is not yet mounted on the wiring substrate, and releases the holding state of floating plate and makes the floating plate to be capable of moving vertically under the state of being urged upward when the socket for the electrical part is mounted on the wiring substrate.

摘要翻译： 用于电气部件的插座，安装在布线基板上以容纳电气部件。 本发明包括插座主体，浮动板和保持结构。 插座本体具有接触针单元，该接触针单元包括其中安装有多个接触针的单元体。 浮板安装在单元主体的上侧以容纳电气部件，并且包括插孔的上侧接触部分的通孔。 当电气部件的插座尚未安装在布线基板上时，保持结构将浮动板保持在下降状态，并且释放浮板的保持状态并使浮板能够在状态下垂直移动 当电气部件的插座安装在布线基板上时被向上推动。

公开(公告)号：US06936510B2

公开(公告)日：2005-08-30

申请号：US10388454

申请日：2003-03-17

申请人： Kazuo Itabashi ,  Osamu Tsuboi ,  Yuji Yokoyama ,  Kenichi Inoue ,  Koichi Hashimoto ,  Wataru Futo

发明人： Kazuo Itabashi ,  Osamu Tsuboi ,  Yuji Yokoyama ,  Kenichi Inoue ,  Koichi Hashimoto ,  Wataru Futo

IPC分类号： H01L21/02 ,  H01L21/60 ,  H01L21/8242 ,  H01L27/105 ,  H01L27/108 ,  H01L27/10

CPC分类号： H01L27/10852 ,  H01L21/76897 ,  H01L27/105 ,  H01L27/10805 ,  H01L27/10817 ,  H01L28/91

摘要： A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating films, and electrically connected to the conductive plug through the second aperture.

摘要翻译： 一种半导体存储器件，包括：覆盖栅电极的上表面和侧表面的第一绝缘膜; 形成在覆盖所述第一绝缘膜的所述基板上的第二绝缘膜; 形成在所述第二绝缘膜上并到达所述杂质扩散区的一对接触孔; 嵌入在所述接触孔之一中的导电插塞; 第三绝缘膜，形成在覆盖所述导电插塞的所述第二绝缘膜上，并且在所述另一个接触孔上具有第一孔; 形成在第三绝缘膜上并通过第一孔和另一个接触孔连接到另一个杂质扩散区的位线; 覆盖位线的上表面和侧表面的第四绝缘膜; 与覆盖所述位线的侧面的所述第四绝缘膜对准的通过所述第三绝缘膜形成的第二孔; 存储电极，其形成为在所述位线上延伸，通过所述第三和第四绝缘膜与所述位线绝缘，并且通过所述第二孔电连接到所述导电插塞。

公开(公告)号：US20130157096A1

公开(公告)日：2013-06-20

申请号：US13820743

申请日：2011-09-16

申请人： Yasushi Nakagiri ,  Hiroaki Furuta ,  Yasuhiko Hina ,  Yuji Yokoyama ,  Shinpei Yamagami ,  Akira Nagasaki ,  Norihiro Yamamoto

发明人： Yasushi Nakagiri ,  Hiroaki Furuta ,  Yasuhiko Hina ,  Yuji Yokoyama ,  Shinpei Yamagami ,  Akira Nagasaki ,  Norihiro Yamamoto

IPC分类号： H01M10/0587

CPC分类号： H01M10/0587 ,  H01M2/1673 ,  H01M2/18 ,  H01M4/667 ,  H01M4/70 ,  H01M10/0431

摘要： Disclosed is a non-aqueous electrolyte secondary battery including: a spirally-wound electrode group including a continuous first electrode, a continuous second electrode, and a continuous separator interposed between the first electrode and the second electrode; and a non-aqueous electrolyte. The first electrode includes a sheet-like first current collector, and a first active material layer formed on a surface of the first current collector; and the second electrode includes a sheet-like second current collector, and a second active material layer formed on a surface of the second current collector. In the electrode group, the winding terminal end of the first electrode faces the second electrode on the further outer peripheral side, with the separator interposed therebetween. The facing site of the second electrode where the second electrode faces the winding terminal end of the first electrode is reinforced with a reinforcing component for supplementing the thickness of the second electrode.

摘要翻译： 本发明公开了一种非水电解质二次电池，包括：螺旋卷绕电极组，包括连续的第一电极，连续的第二电极和介于所述第一电极和所述第二电极之间的连续隔膜; 和非水电解质。 第一电极包括片状第一集电体和形成在第一集电体的表面上的第一活性物质层; 并且所述第二电极包括片状的第二集电体和形成在所述第二集电体的表面上的第二活性物质层。 在电极组中，第一电极的绕组末端在另外的外周侧面对第二电极，隔膜间隔开。 第二电极的面对第一电极的绕组末端的第二电极的面对部位用用于补充第二电极的厚度的增强部件来增强。

公开(公告)号：US20120225337A1

公开(公告)日：2012-09-06

申请号：US13510816

申请日：2011-08-08

申请人： Yasushi Nakagiri ,  Hiroaki Furuta ,  Yasuhiko Hina ,  Yuji Yokoyama ,  Shinpei Yamagami ,  Akira Nagasaki ,  Norihiro Yamamoto

发明人： Yasushi Nakagiri ,  Hiroaki Furuta ,  Yasuhiko Hina ,  Yuji Yokoyama ,  Shinpei Yamagami ,  Akira Nagasaki ,  Norihiro Yamamoto

IPC分类号： H01M4/00 ,  H01M4/139

CPC分类号： H01M10/0566 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M10/0431 ,  H01M10/0525 ,  H01M10/0587 ,  Y02T10/7011 ,  Y10T29/49112

摘要： A non-aqueous electrolyte secondary battery comprising: an electrode group in which a long first electrode, a long second electrode, and a long separator disposed therebetween are wound spirally; and a non-aqueous electrolyte, is provided. The first electrode includes a sheet-like first current collector and a first active material layer disposed on a surface of the first current collector. The second electrode includes a sheet-like second current collector and a second active material layer disposed on a surface of the second current collector. An end portion of the first electrode on a winding-end side of the electrode group has a non-linear form and faces the second electrode placed on an outer circumferential side with the separator therebetween. The non-linear form is preferably a periodically continuous form, for example a waveform.

摘要翻译： 1，一种非水电解质二次电池，其特征在于，包括长螺旋状地缠绕有长的第1电极，长的第2电极和长隔板的电极组， 和非水电解质。 第一电极包括片状第一集电体和设置在第一集电体的表面上的第一活性物质层。 第二电极包括片状的第二集电体和设置在第二集电体的表面上的第二活性物质层。 电极组的绕线端侧的第一电极的端部具有非线性形状，并且与隔膜之间的隔板面对设置在外周侧的第二电极。 非线性形式优选地是周期性连续的形式，例如波形。

公开(公告)号：US07824188B2

公开(公告)日：2010-11-02

申请号：US12630290

申请日：2009-12-03

申请人： Yuji Yokoyama

发明人： Yuji Yokoyama

IPC分类号： H01R12/00

CPC分类号： H05K7/1061

摘要： A socket for an electric component includes: a socket main body having a receiving portion which receives an electric component such as an IC package; a socket cover supported to be capable of turning by a first turning shaft provided in a vicinity of one side end of the socket main body to turn to thereby open or close the housing portion; and a radiating member mounted to the socket cover and is in contact with the electric component received in the receiving portion to radiate heat from the electric component in a state of the socket cover being closed. The socket cover has an opening portion formed in a position corresponding to the receiving portion of the socket main body in the closed state, and the radiating member is supported to be capable of turning by a second turning shaft parallel to the first turning shaft in the opening of the socket cover.

摘要翻译： 一种用于电气部件的插座包括：插座主体，具有容纳诸如IC封装的电气部件的接收部分; 插座盖被支撑成能够通过设置在插座主体的一个侧端附近的第一转动轴转动，从而打开或关闭壳体部; 以及散热构件，其安装到所述插座盖并且与所述接收部分中容纳的电气部件接触，以在所述插座盖被封闭的状态下从所述电气部件辐射热量。 插座盖具有在关闭状态下形成在与插座主体的容纳部相对应的位置的开口部，并且散热构件被支撑为能够通过平行于第一转动轴的第二转动轴在第 打开插座盖。

公开(公告)号：US20060219677A1

公开(公告)日：2006-10-05

申请号：US11392803

申请日：2006-03-30

申请人： Kanji Matsutani ,  Masaki Mashiko ,  Yuji Yokoyama ,  Mieko Akaba ,  Hiroshi Yagisawa ,  Masao Akatsuka ,  Shoichi Fukuda

发明人： Kanji Matsutani ,  Masaki Mashiko ,  Yuji Yokoyama ,  Mieko Akaba ,  Hiroshi Yagisawa ,  Masao Akatsuka ,  Shoichi Fukuda

IPC分类号： B23K26/38

CPC分类号： B21G1/08 ,  A61B17/06066 ,  A61B2017/00526 ,  A61B2017/061 ,  B23K26/389

摘要： A method for manufacturing an eyeless needle by which a satisfactory hole can be formed in the end surface of a fine suture needle having a needle diameter less than 150 micrometers is proposed. In a method for manufacturing an eyeless needle by forming a hole for inserting and fixing one end of a suture thread by caulking in the end surface of the eyeless suture needle made of stainless steel, the hole is formed by irradiating the end surface of a needle material thicker by 6 to 20 micrometers than a desired needle diameter of the suture needle less than 150 micrometers with one shot of a laser beam, and subsequently, a portion thicker than the desired needle diameter is removed by electrolytic polishing or chemical polishing.

摘要翻译： 提出了一种制造无眼针的方法，通过该方法可以在针直径小于150微米的精细缝合针的端面中形成令人满意的孔。 在通过在由不锈钢制成的无眼缝合针的端面中铆接而形成用于插入和固定缝合线的一端的孔的方法中，通过照射针的端面而形成孔 通过电击抛光或化学抛光除去比单次激光束小于150微米的缝合针的期望针直径比所需针直径更大6至20微米的材料，随后通过电解抛光或化学抛光除去比所需针直径更厚的部分。

公开(公告)号：US06735129B2

公开(公告)日：2004-05-11

申请号：US10153525

申请日：2002-05-24

申请人： Hiroshi Akasaki ,  Shuichi Miyaoka ,  Yuji Yokoyama ,  Masatoshi Hasegawa ,  Kozaburo Kurita

发明人： Hiroshi Akasaki ,  Shuichi Miyaoka ,  Yuji Yokoyama ,  Masatoshi Hasegawa ,  Kozaburo Kurita

IPC分类号： G11C700

CPC分类号： G11C7/1066 ,  G11C7/1006 ,  G11C7/1039 ,  G11C7/1072 ,  G11C2207/104

摘要： In a semiconductor integrated circuit device that includes macro cells (circuit blocks that can be designed independently) such as a storage circuit and operates synchronously with an external clock, total delay time from signal input to output is reduced and the speed of operation is increased. In the semiconductor integrated circuit device which has plural circuit blocks coupled in series for signal transmission and whose whole operation is controlled by a clock signal, the semiconductor integrated circuit device including first circuit blocks that receive input signals in response to a first timing signal based on a clock signal, and a second circuit block that forms output signals in response to a second timing signal based on the clock signal, a time difference between the first timing signal and the second timing signal is set to a non-integral multiple of the cycle of the clock signal.

摘要翻译： 在包括诸如存储电路的宏单元（可独立设计的电路块）并且与外部时钟同步地操作的半导体集成电路器件中，从信号输入到输出的总延迟时间减少，并且操作速度增加。 在具有串联耦合用于信号传输并且其整个操作由时钟信号控制的多个电路块的半导体集成电路器件中，半导体集成电路器件包括响应于基于第一定时信号接收输入信号的第一电路块 时钟信号和响应于基于时钟信号的第二定时信号形成输出信号的第二电路块，第一定时信号和第二定时信号之间的时间差被设置为该周期的非整数倍 的时钟信号。

公开(公告)号：US06285045B1

公开(公告)日：2001-09-04

申请号：US08890991

申请日：1997-07-10

申请人： Kazuo Itabashi ,  Osamu Tsuboi ,  Yuji Yokoyama ,  Kenichi Inoue ,  Koichi Hashimoto ,  Wataru Futo

发明人： Kazuo Itabashi ,  Osamu Tsuboi ,  Yuji Yokoyama ,  Kenichi Inoue ,  Koichi Hashimoto ,  Wataru Futo

IPC分类号： H01L2710

CPC分类号： H01L27/10852 ,  H01L21/76897 ,  H01L27/105 ,  H01L27/10805 ,  H01L27/10817 ,  H01L28/91

摘要： A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating films, and electrically connected to the conductive plug through the second aperture.

摘要翻译： 一种半导体存储器件，包括：覆盖栅电极的上表面和侧表面的第一绝缘膜; 形成在覆盖所述第一绝缘膜的所述基板上的第二绝缘膜; 形成在所述第二绝缘膜上并到达所述杂质扩散区的一对接触孔; 嵌入在所述接触孔之一中的导电插塞; 第三绝缘膜，形成在覆盖所述导电插塞的所述第二绝缘膜上，并且在所述另一个接触孔上具有第一孔; 形成在第三绝缘膜上并通过第一孔和另一个接触孔连接到另一个杂质扩散区的位线; 覆盖位线的上表面和侧表面的第四绝缘膜; 与覆盖所述位线的侧面的所述第四绝缘膜对准的通过所述第三绝缘膜形成的第二孔; 存储电极，其形成为在所述位线上延伸，通过所述第三和第四绝缘膜与所述位线绝缘，并且通过所述第二孔电连接到所述导电插塞。