公开(公告)号：US5819434A

公开(公告)日：1998-10-13

申请号：US638884

申请日：1996-04-25

申请人： Harald Herchen ,  Walter Merry ,  William Brown

发明人： Harald Herchen ,  Walter Merry ,  William Brown

IPC分类号： C23F4/00 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  F26B19/00

CPC分类号： C23C16/45565 ,  H01J37/3244

摘要： A thin gas distribution plate is provided, consistent with requirements for mechanical rigidity and strength. The gas distribution plate has sufficiently low mass to permit rapid heating to an equilibrium temperature as determined by radiated heat loss. The gas distribution plate has a thinner central cross-section, optionally including smaller diameter apertures formed therethrough; and has a thicker circumferential cross-section, optionally having larger apertures formed therethrough, to thereby promote even gas distribution across the surface of the wafer, while mitigating or eliminating entirely the first wafer effect.

摘要翻译： 提供薄气体分配板，符合机械刚度和强度要求。 气体分布板具有足够低的质量，以允许快速加热到通过辐射热损失确定的平衡温度。 气体分配板具有较薄的中心横截面，可选地包括通过其形成的较小直径的孔; 并且具有更厚的圆周横截面，可选地具有通过其形成的更大的孔，从而促进跨过晶片表面的均匀气体分布，同时减轻或消除完全第一晶片效应。

公开(公告)号：US5789322A

公开(公告)日：1998-08-04

申请号：US870110

申请日：1997-06-05

申请人： William Brown ,  Harald Herchen ,  Ihi Nzeadibe ,  Walter Merry

发明人： William Brown ,  Harald Herchen ,  Ihi Nzeadibe ,  Walter Merry

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  C23C16/00 ,  H01L21/00

CPC分类号： H01J37/3244

摘要： An improved low-volume gas distribution assembly for a chemical downstream etch tool includes a focusing collar positioned within a process chamber and having a depending shroud in close proximity to a wafer chuck. An apertured gas delivery conduit rests on channels formed in slanted sides of a central tube of the focusing collar. The apertures in the gas delivery conduit are patterned and dimensioned to provide substantially uniform distribution of a process gas over the upper surface of the workpiece. The central tube is sealed with a cover plate and the process chamber is covered with a chamber lid.

摘要翻译： 用于化学下游蚀刻工具的改进的低体积气体分配组件包括定位在处理室内并具有紧邻晶片卡盘的垂直护罩的聚焦轴环。 多孔气体输送导管支撑在聚焦轴环的中心管的倾斜侧面上形成的通道上。 气体输送管道中的孔被图案化并确定尺寸以提供工件气体在工件的上表面上的基本上均匀的分布。 中心管用盖板密封，处理室被室盖覆盖。

公开(公告)号：US5780359A

公开(公告)日：1998-07-14

申请号：US570058

申请日：1995-12-11

申请人： William Brown ,  Harald Herchen ,  Walter Merry ,  Michael Welch

发明人： William Brown ,  Harald Herchen ,  Walter Merry ,  Michael Welch

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/02071 ,  H01L21/31138

摘要： A process for producing a strip removes photoresist and extraneous deposits of polymer residue on the top surface and sidewalls of a post-metal etch wafer. The photoresist and residue are processed simultaneously by a chemical mechanism comprising reactive species derived from a microwave-excited fluorine-containing downstream gas, and a physical mechanism comprising ion bombardment that results from a radio frequency excited plasma and accompanying wafer self bias. A vacuum pump draws stripped photoresist and residues from the surface of the wafer and exhausts them from the chamber.

公开(公告)号：US5728260A

公开(公告)日：1998-03-17

申请号：US654958

申请日：1996-05-29

申请人： William Brown ,  Harald Herchen ,  Ihi Nzeadibe ,  Walter Merry

发明人： William Brown ,  Harald Herchen ,  Ihi Nzeadibe ,  Walter Merry

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/00 ,  C23F1/00

CPC分类号： H01J37/3244

摘要： An improved low-volume gas distribution assembly for a chemical downstream etch tool includes a focusing collar positioned within a process chamber and having a depending shroud in close proximity to a wafer chuck. An apertured gas delivery conduit rests on channels formed in slanted sides of a central tube of the focusing collar. The apertures in the gas delivery conduit are patterned and dimensioned to provide substantially uniform distribution of a process gas over the upper surface of the workpiece. The central tube is sealed with a cover plate and the process chamber is covered with a chamber lid.

摘要翻译： 用于化学下游蚀刻工具的改进的低体积气体分配组件包括定位在处理室内并具有紧邻晶片卡盘的垂直护罩的聚焦轴环。 多孔气体输送导管支撑在聚焦轴环的中心管的倾斜侧面上形成的通道上。 气体输送管道中的孔被图案化并确定尺寸以提供工件气体在工件的上表面上的基本上均匀的分布。 中心管用盖板密封，处理室被室盖覆盖。

公开(公告)号：US6062237A

公开(公告)日：2000-05-16

申请号：US060173

申请日：1998-04-14

申请人： William Brown ,  Harald Herchen ,  Walter Merry ,  Michael Welch

发明人： William Brown ,  Harald Herchen ,  Walter Merry ,  Michael Welch

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  B08B6/00

CPC分类号： H01L21/02071 ,  H01L21/31138

摘要： A process for producing a strip removes photoresist and extraneous deposits of polymer residue on the top surface and sidewalls of a post-metal etch wafer. The photoresist and residue are processed simultaneously by a chemical mechanism comprising reactive species derived from a microwave-excited fluorine-containing downstream gas, and a physical mechanism comprising ion bombardment that results from a radio frequency excited plasma and accompanying wafer self bias. A vacuum pump draws stripped photoresist and residues from the surface of the wafer and exhausts them from the chamber.

摘要翻译： 制造带材的方法在后金属蚀刻晶片的顶表面和侧壁上去除光致抗蚀剂和聚合物残余物的外来沉积物。 光致抗蚀剂和残余物通过包含衍生自微波激发的含氟下游气体的反应物质的化学机理以及由射频激发等离子体和伴随的晶片自偏压产生的离子轰击的物理机理同时进行处理。 真空泵从晶片的表面吸出剥离的光致抗蚀剂和残留物，并将其从室中排出。

公开(公告)号：US20050224181A1

公开(公告)日：2005-10-13

申请号：US10821723

申请日：2004-04-08

申请人： Walter Merry ,  Quanyuan Shang ,  John White

发明人： Walter Merry ,  Quanyuan Shang ,  John White

IPC分类号： B44C1/22 ,  C23F1/00 ,  G02F20060101 ,  H01J37/32 ,  H01L21/302

CPC分类号： H01J37/3244 ,  H01J37/32357 ,  H01J37/32522 ,  H01J37/32788 ,  H01J2237/3325 ,  H01J2237/334

摘要： Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of the film stack in a processing chamber to expose a portion of an underlying silicon layer, and etching a trench in the silicon layer without removing the substrate from the processing chamber. The invention is particularly useful for thin film transistor fabrication for flat panel displays.

摘要翻译： 提供了一种用于处理薄膜叠层的集群工具，处理室和方法的实施例。 在一个实施例中，提供了一种用于原位蚀刻膜堆叠的硅和金属层的方法，其包括以下步骤：在处理室中蚀刻膜堆叠的上金属层以暴露下层硅层的一部分， 并且在硅层中蚀刻沟槽而不从处理室移除衬底。 本发明对于平板显示器的薄膜晶体管制造特别有用。

公开(公告)号：US20050048789A1

公开(公告)日：2005-03-03

申请号：US10655231

申请日：2003-09-03

申请人： Walter Merry ,  Cecilia Mak ,  Kam Law

发明人： Walter Merry ,  Cecilia Mak ,  Kam Law

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/30655 ,  H01L21/31116

摘要： A method of etching a dielectric layer formed on a substrate including a sequence of processing cycles, wherein each cycle comprises steps of depositing an inactive polymeric film, activating the film to etch the structure, and removing the film is disclosed. In one embodiment, the method uses a fluorocarbon gas to form the polymeric film and a substrate bias to activate such film.

摘要翻译： 一种蚀刻在衬底上形成的包括一系列处理循环的电介质层的方法，其中每个循环包括沉积非活性聚合物膜，激活该膜以蚀刻该结构并除去该膜的步骤。 在一个实施方案中，该方法使用碳氟化合物气体来形成聚合物膜和衬底偏压以激活这种膜。

公开(公告)号：US20090302002A1

公开(公告)日：2009-12-10

申请号：US12395057

申请日：2009-02-27

申请人： Kenneth Collins ,  Martin Salinas ,  Walter Merry ,  Jie Yuan ,  Andrew Nguyen ,  Kartik Ramaswamy ,  Jennifer Sun ,  Ren-Guan Duan ,  Xiaoming He ,  Nancy Fung

发明人： Kenneth Collins ,  Martin Salinas ,  Walter Merry ,  Jie Yuan ,  Andrew Nguyen ,  Kartik Ramaswamy ,  Jennifer Sun ,  Ren-Guan Duan ,  Xiaoming He ,  Nancy Fung

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H01J37/321 ,  G03F7/427 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/31138

摘要： A method and an apparatus for removing polymer from a substrate are provided. In one embodiment, an apparatus utilized to remove polymer from a substrate includes a processing chamber having a chamber wall and a chamber lid defining a process volume, a substrate support assembly disposed in the processing chamber, and a remote plasma source coupled to the processing chamber through an outlet port formed within the chamber wall, the outlet port having an opening pointing toward an periphery region of a substrate disposed on the substrate support assembly, wherein the remote plasma source is fabricated from a material resistant to hydrogen species.

摘要翻译： 提供了从基板上除去聚合物的方法和装置。 在一个实施方案中，用于从基材中除去聚合物的装置包括具有室壁和限定处理体积的室盖的处理室，设置在处理室中的基板支撑组件和耦合到处理室的远程等离子体源 通过形成在室壁内的出口，出口具有指向设置在基板支撑组件上的基板的周边区域的开口，其中远程等离子体源由耐氢物质的材料制成。

公开(公告)号：US5786276A

公开(公告)日：1998-07-28

申请号：US829683

申请日：1997-03-31

申请人： Cynthia B. Brooks ,  Walter Merry ,  Ajey M. Joshi ,  Gladys D. Quinones ,  Jitske Trevor

发明人： Cynthia B. Brooks ,  Walter Merry ,  Ajey M. Joshi ,  Gladys D. Quinones ,  Jitske Trevor

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  B44C1/22

CPC分类号： H01L21/31116

摘要： A chemical downstream etching (CDE) that is selective to silicon nitrides (SiN) over silicon oxides (SiO) uses at least one of a CH.sub.3 F/CF.sub.4 /O.sub.2 recipe and a CH.sub.2 F.sub.2 /CF.sub.4 /O.sub.2 recipe. Inflow rates are mapped for the respective components of the input recipe to find settings that provide both high nitride etch rates and high selectivity towards the SiN material. A pins-up scheme is used for simultaneously stripping away backside nitride with topside nitride.

摘要翻译： 在硅氧化物（SiO）上对氮化硅（SiN）有选择性的化学下游蚀刻（CDE）使用CH3F / CF4 / O2配方和CH2F2 / CF4 / O2配方中的至少一种。 对于输入配方的各个组件映射流入速率，以找到提供高氮化物蚀刻速率和对SiN材料具有高选择性的设置。 引脚方案用于同时剥离带有顶侧氮化物的背面氮化物。