公开(公告)号：US5548099A

公开(公告)日：1996-08-20

申请号：US304920

申请日：1994-09-13

申请人： Herbert S. Cole, Jr. ,  Theresa A. Sitnik-Nieters

发明人： Herbert S. Cole, Jr. ,  Theresa A. Sitnik-Nieters

IPC分类号： H01L23/29 ,  H01L23/31 ,  H01L23/538 ,  H01L23/66 ,  B23K26/00 ,  H01L21/60 ,  H05K3/30

CPC分类号： H01L24/24 ,  H01L23/29 ,  H01L23/315 ,  H01L23/5389 ,  H01L23/66 ,  H01L24/82 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787 ,  H01L2924/3011 ,  Y10T29/4913

摘要： In a method for preserving an air bridge structure on an integrated circuit chip, without sacrificing metallization routing area in an overlying high density interconnect structure, a protective layer is sublimed over the air bridge to provide mechanical strength while preventing contamination and deformation during processing. A high density interconnect structure is applied over the chip and protective layer. A small portion of the high density interconnect structure is removed from the area over the air bridge structure, and the protective layer is then sublimed away, leaving the resultant structure with an undamaged air bridge which is free of residue.

摘要翻译： 在一种用于在集成电路芯片上保持空气桥结构的方法中，不牺牲上覆高密度互连结构中的金属化布线区域，保护层在空气桥上升华以提供机械强度，同时防止加工过程中的污染和变形。 在芯片和保护层上施加高密度互连结构。 将高密度互连结构的一小部分从空气桥结构上的区域去除，然后将保护层升华，留下所得结构与没有残留物的未损坏的空气桥。

公开(公告)号：US5434751A

公开(公告)日：1995-07-18

申请号：US225876

申请日：1994-04-11

申请人： Herbert S. Cole, Jr. ,  Theresa A. Sitnik-Nieters ,  Robert J. Wojnarowski ,  John H. Lupinski

发明人： Herbert S. Cole, Jr. ,  Theresa A. Sitnik-Nieters ,  Robert J. Wojnarowski ,  John H. Lupinski

IPC分类号： H01L21/48 ,  H01L23/538 ,  H05K1/00 ,  H05K1/11

CPC分类号： H01L24/82 ,  H01L21/485 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L2224/04105 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L24/73 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787 ,  H05K1/0286 ,  H05K3/4676 ,  Y10T29/49155

摘要： A multichip module (incorporating a high density interconnect structure) has: a first portion containing a substrate with semiconductor chips therein, with each chip having contact pads; a second portion comprising a (HDI) structure interconnecting the chip pads; and a solvent-soluble release layer bonding the two portions together and allowing for easy removal of the HDI structure from the substrate of the module by immersion in an appropriate solvent for the release layer.

摘要翻译： 多芯片模块（包括高密度互连结构）具有：包含其中具有半导体芯片的衬底的第一部分，每个芯片具有接触焊盘; 第二部分包括互连芯片焊盘的（HDI）结构; 以及将两部分结合在一起的溶剂可溶性剥离层，并且通过浸渍在用于剥离层的合适溶剂中，可以容易地从模块的基材上除去HDI结构。

公开(公告)号：US5401687A

公开(公告)日：1995-03-28

申请号：US46299

申请日：1993-04-15

申请人： Herbert S. Cole ,  Theresa A. Sitnik-Nieters ,  Bernard Gorowitz

发明人： Herbert S. Cole ,  Theresa A. Sitnik-Nieters ,  Bernard Gorowitz

IPC分类号： H01L21/768 ,  H01L23/482 ,  H01L23/538 ,  H01L21/28 ,  H01L21/56 ,  H01L21/58 ,  H01L21/60

CPC分类号： H01L24/82 ,  H01L23/4821 ,  H01L23/5381 ,  H01L24/24 ,  H01L2224/24227 ,  H01L2224/82039 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787

摘要： In a method for preserving an air bridge structure on an integrated circuit chip used in an overlay process, a patternable protective layer is applied for providing mechanical strength to prevent deformation during subsequent processing. A polymeric film layer is applied over the chip and protective layer, and interconnections are fabricated through the polymeric film layer. The polymeric film layer is removed from the area over the air bridge structure. The patternable protective layer is then removed, leaving the resultant structure with an undamaged air bridge which is free of residue.

摘要翻译： 在用于在覆盖工艺中使用的集成电路芯片上保留空气桥结构的方法中，施加可图案化的保护层以提供机械强度以防止后续处理期间的变形。 将聚合物膜层施加在芯片和保护层上，并且通过聚合物膜层制造互连。 从空气桥结构上的区域去除聚合物膜层。 然后去除可图案化的保护层，使得所得结构具有没有残留物的未损坏的空气桥。

公开(公告)号：US5554305A

公开(公告)日：1996-09-10

申请号：US411178

申请日：1995-03-27

申请人： Robert J. Wojnarowski ,  Herbert S. Cole ,  Theresa A. Sitnik-Nieters ,  Wolfgang Daum

发明人： Robert J. Wojnarowski ,  Herbert S. Cole ,  Theresa A. Sitnik-Nieters ,  Wolfgang Daum

IPC分类号： B32B7/02 ,  B32B18/00 ,  H01L21/48 ,  H01L21/60 ,  H01L23/498 ,  H01L23/538 ,  H05K1/02 ,  H05K1/03 ,  H05K3/00 ,  H05K3/38 ,  H01L21/3105

CPC分类号： H05K1/0313 ,  H01L21/481 ,  H01L23/49894 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H05K1/024 ,  H05K1/0373 ,  H05K3/0032 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/3011 ,  H05K2201/0116 ,  H05K2201/015 ,  H05K2201/0158 ,  H05K2203/083 ,  H05K2203/122 ,  H05K3/386 ,  Y10S521/918 ,  Y10T29/49124 ,  Y10T29/49155

摘要： A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.

公开(公告)号：US5449427A

公开(公告)日：1995-09-12

申请号：US247820

申请日：1994-05-23

申请人： Robert J. Wojnarowski ,  Herbert S. Cole ,  Theresa A. Sitnik-Nieters ,  Wolfgang Daum

发明人： Robert J. Wojnarowski ,  Herbert S. Cole ,  Theresa A. Sitnik-Nieters ,  Wolfgang Daum

IPC分类号： B32B7/02 ,  B32B18/00 ,  H01L21/48 ,  H01L21/60 ,  H01L23/498 ,  H01L23/538 ,  H05K1/02 ,  H05K1/03 ,  H05K3/00 ,  H05K3/38 ,  B32B31/12 ,  B32B31/14

CPC分类号： H05K1/0313 ,  H01L21/481 ,  H01L23/49894 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H05K1/024 ,  H05K1/0373 ,  H05K3/0032 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/3011 ,  H05K2201/0116 ,  H05K2201/015 ,  H05K2201/0158 ,  H05K2203/083 ,  H05K2203/122 ,  H05K3/386 ,  Y10S521/918 ,  Y10T29/49124 ,  Y10T29/49155

摘要： A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.

摘要翻译： 用于处理低介电常数材料的方法包括将添加剂材料分散在多孔低介电常数层中，制造所需的电子结构，然后从低介电常数层的孔中除去添加剂材料。 从孔中去除添加剂材料可以通过升华，蒸发和扩散来实现。 用于低介电常数层的应用包括用作互连由衬底支撑的电路芯片和用作印刷电路板材料的覆盖层的用途。

公开(公告)号：US5576517A

公开(公告)日：1996-11-19

申请号：US411176

申请日：1995-03-27

申请人： Robert J. Wojnarowski ,  Herbert S. Cole ,  Theresa A. Sitnik-Nieters ,  Wolfgang Daum

发明人： Robert J. Wojnarowski ,  Herbert S. Cole ,  Theresa A. Sitnik-Nieters ,  Wolfgang Daum

IPC分类号： B32B7/02 ,  B32B18/00 ,  H01L21/48 ,  H01L21/60 ,  H01L23/498 ,  H01L23/538 ,  H05K1/02 ,  H05K1/03 ,  H05K3/00 ,  H05K3/38 ,  H05K1/18

CPC分类号： H05K1/0313 ,  H01L21/481 ,  H01L23/49894 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H05K1/024 ,  H05K1/0373 ,  H05K3/0032 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/3011 ,  H05K2201/0116 ,  H05K2201/015 ,  H05K2201/0158 ,  H05K2203/083 ,  H05K2203/122 ,  H05K3/386 ,  Y10S521/918 ,  Y10T29/49124 ,  Y10T29/49155

摘要： An electronic structure includes a circuit chip having chip pads and supported by a substrate, and a low dielectric constant porous polymer layer having pores and situated over the substrate and circuit chip. The porous polymer layer has at least one via therein aligned with at least one of the chip pads, and a pattern of electrical conductors extends over a portion of the porous polymer layer and into the at least one via. The pattern of electrical conductors does not significantly protrude into the pores of the porous polymer layer.

摘要翻译： 电子结构包括具有芯片焊盘并由衬底支撑的电路芯片，以及具有孔并位于衬底和电路芯片上的低介电常数多孔聚合物层。 多孔聚合物层具有与至少一个芯片焊盘对准的至少一个通孔，并且电导体图案在多孔聚合物层的一部分上延伸到至少一个通孔中。 电导体的图案不会显着地突出到多孔聚合物层的孔中。