-
公开(公告)号：US5160993A
公开(公告)日：1992-11-03
申请号：US711548
申请日：1991-06-06
IPC分类号： G02F1/017 , G02F1/21 , H01L31/0352
CPC分类号： B82Y20/00 , G02F1/01716 , G02F1/218 , H01L31/035236 , H01L31/035281 , Y02E10/50
摘要： In an optosemiconductor device including a superlattice configuration (TBQ) of first and second quantum well layers and a potential barrier therebetween, photo-excited carriers are formed in the first quantum well layer and are tunnelled through the potential barrier toward the second quantum well layer, so that the tunneled carriers are accumulated in the second quantum well layer. An electric field is applied to the superlattice configuration to expel the tunneled carriers from the second quantum well layer.
-
2.发明授权Non-linear quantum semiconductor optical device having a signal-to-noise ratio 失效具有改善的信噪比的非线性半导体光学器件
公开(公告)号：US5225692A
公开(公告)日：1993-07-06
申请号：US858132
申请日：1992-03-27
CPC分类号： B82Y20/00 , G02F1/01716 , G02F1/218 , G02F3/026 , H01S3/1061 , H01S5/18302 , H01S5/0609 , H01S5/18341 , H01S5/3416
摘要： A non-linear semiconductor optical device comprises a first quantum well layer having discrete quantum levels of carriers including a first quantum level for electrons and a second quantum level for holes with an energy gap corresponding to a wavelength of an incident optical beam; a pair of barrier layers provided above and below the first quantum well layer in contact therewith with a thickness that allows a tunneling of the carriers therethrough for defining a potential well in correspondence to the first quantum well layer; and a second quantum well layer provided in contact with the barrier layers for accepting the carriers that have been created in the first quantum well layer upon excitation by the incident optical beam and escaped therefrom by tunneling through the barrier layer. The second quantum well layer comprises a material that has a conduction band including therein a .GAMMA. valley and an X valley, wherein said .GAMMA. valley is located at an energy level substantially higher than the first quantum level while said X valley is located at an energy level substantially lower than the first quantum level.
-
公开(公告)号：US5284783A
公开(公告)日：1994-02-08
申请号：US724935
申请日：1991-07-02
申请人： Hideaki Ishikawa , Toshio Fujii , Eizo Miyauchi
发明人： Hideaki Ishikawa , Toshio Fujii , Eizo Miyauchi
IPC分类号： H01L21/22 , H01L21/331 , H01L21/265
CPC分类号： H01L29/66318 , H01L21/22 , Y10S438/936
摘要： A method of fabricating a semiconductor device having an epitaxial layer of a group III-V semiconductor material provided on an underlying crystal layer with a lattice matching therewith, the semiconductor material being doped to the p-type by addition of beryllium and selected from a group including gallium aluminum arsenide and indium gallium aluminum arsenide, in which the method comprises steps of growing the epitaxial layer on the underlying crystal layer, adding beryllium to a concentration level of about 5.times.10.sup.19 atoms/cm.sup.3 to about 5.times.10.sup.20 atoms/cm.sup.3 to the semiconductor material, and adding indium by an amount of about 0.5 mole percent to about 8 mole percent with respect to group III elements in the semiconductor material.
摘要翻译： 一种制造半导体器件的方法，该半导体器件具有设置在与晶格匹配的基底晶体层上的III-V族半导体材料的外延层，该半导体材料通过添加铍而掺杂成p型，并且选自 包括砷化镓铝和砷化铟镓砷，其中该方法包括在下面的晶体层上生长外延层的步骤，将铍添加到约5×1019原子/厘米3至约5×1020原子/厘米3的浓度至 半导体材料，并且相对于半导体材料中的III族元素，将铟添加量为约0.5摩尔％至约8摩尔％。
-
4.发明授权公开(公告)号：US09184439B2
公开(公告)日：2015-11-10
申请号：US13516974
申请日：2010-12-08
摘要： Providing a noble negative-electrode active material including silicon, and a production process for the same.A negative-electrode active material for non-aqueous-system secondary battery including a silicon phase and a composite oxide phase (a CaSiO3 phase, for instance) is obtained by mixing a silicon oxide (SiO, for instance) with a silicon compound (CaSi2, for instance), which includes silicon and at least one member of elements being selected from the group consisting of Group 2 (or Group 2A) elements in the Periodic Table, to prepare a mixed raw material, and then reacting the mixed raw material. The composite oxide phase demonstrates the advantage of inhibiting electrolytic solutions from decomposing in a smaller amount than does the conventional SiO2 phase.
摘要翻译： 提供含有硅的贵负极活性物质及其制造方法。 通过将氧化硅（例如SiO）与硅化合物（CaSi 2）相混合，得到含有硅相和复合氧化物相（例如CaSiO 3相）的非水系二次电池用负极活性物质 例如），其包括硅和选自元素周期表中的组2（或组2A）元素的元素中的至少一个元素，以制备混合原料，然后使混合原料反应。 复合氧化物相显示了抑制电解液比常规SiO 2相分解更少的优点。
-
公开(公告)号：US20130165657A1
公开(公告)日：2013-06-27
申请号：US13732857
申请日：2013-01-02
IPC分类号： C07C269/08 , C07C55/07 , C07C271/24 , C07C51/43 , C07D513/04
CPC分类号： C07C269/08 , C07C51/43 , C07C55/07 , C07D417/04 , C07D513/04 , C07C271/24
摘要： The problem to be solved is to produce, at high yields with high purity, anhydrous crystals of a compound represented by formula (1) that is an important intermediate for preparation of FXa inhibitor compound (X) or a pharmacologically acceptable salt thereof, or a hydrate thereof. The solution thereto is an industrial preparation process that provides, with high purity, anhydrous crystals of a compound represented by the following formula (1), which is an intermediate for the production of FXa inhibitor compound (X) or a pharmacologically acceptable salt thereof, or a hydrate thereof, wherein Boc represents a tert-butoxycarbonyl group.
摘要翻译： 要解决的问题是以高纯度产生作为制备FXa抑制剂化合物（X）或其药理学上可接受的盐的重要中间体的式（1）表示的化合物的无水晶体，或 水合物。 其解决方案是工业制备方法，其提供由用于制备FXa抑制剂化合物（X）或其药理学上可接受的盐的中间体的由下式（1）表示的化合物的高纯度无水晶体， 或其水合物，其中Boc表示叔丁氧基羰基。
-
公开(公告)号：US5590407A
公开(公告)日：1996-12-31
申请号：US533194
申请日：1995-09-25
申请人： Hideaki Ishikawa , Atsunao Shinoda
发明人： Hideaki Ishikawa , Atsunao Shinoda
CPC分类号： H04M1/725
摘要： A drive through wireless order taking system includes a base station, and a slave station being connectable with the base station by radio and being movable into and out of a talk lock state. The base station includes a device for transmitting a talk lock release signal to the slave station. The slave station includes a device for moving the slave station out of the talk lock state in response to the talk lock release signal transmitted from the base station.
摘要翻译： 通过无线订单取出系统的驱动器包括基站，以及能够通过无线电与基站连接并可进出通话锁定状态的从站。 基站包括用于将通话锁释放信号发送到从站的设备。 从站包括用于响应于从基站发送的通话锁释放信号将从站移动到通话锁定状态的设备。
-
公开(公告)号：US20120087095A1
公开(公告)日：2012-04-12
申请号：US13266675
申请日：2010-04-16
CPC分类号： H01L23/467 , B60K1/02 , B60K6/365 , B60K6/445 , B60L3/003 , B60L11/123 , B60L11/14 , B60L2200/10 , B60L2200/26 , B60L2200/32 , B60L2200/36 , B60L2220/12 , B60L2220/14 , B60L2240/36 , B60L2240/525 , C25D11/08 , C25D11/10 , C25D11/12 , H01L23/367 , H01L23/433 , H01L23/473 , H01L24/33 , H01L25/072 , H01L2224/73265 , H01L2224/83101 , H01L2224/8384 , H01L2924/01327 , H01L2924/07802 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H02M7/003 , Y02T10/6217 , Y02T10/6239 , Y02T10/7077 , H01L2924/00
摘要： A power module according to the present invention includes: a semiconductor element for converting DC current to AC current by switching operation; an electrical wiring board to which the semiconductor element is electrically connected, with the semiconductor element being disposed upon one of its principal surfaces; an insulating resin layer provided on the other principal surface of the electrical wiring board; a first insulation layer that is disposed opposite from the electrical wiring board, separated by the insulating resin layer, and that is joined to the insulating resin layer; a second insulation layer that is disposed opposite from the insulating resin layer, separated by the first insulation layer, and that ensures electrical insulation of the semiconductor element; and a metallic heat dissipation member that is disposed opposite from the first insulation layer, separated by the second insulation layer, and that radiates heat generated by the semiconductor element via the electrical wiring board, the insulating resin layer, the first insulation layer, and the second insulation layer.
摘要翻译： 根据本发明的电源模块包括：用于通过切换操作将DC电流转换成AC电流的半导体元件; 半导体元件电连接的电气布线板，半导体元件设置在其主表面之一上; 绝缘树脂层，设置在所述电气布线板的另一个主表面上; 第一绝缘层，与所述电布线板相对设置，由所述绝缘树脂层隔开，并且与所述绝缘树脂层接合; 第二绝缘层，与绝缘树脂层相对设置，由第一绝缘层隔开，并且确保半导体元件的电绝缘; 以及金属散热构件，其与所述第一绝缘层相对设置，由所述第二绝缘层隔开，并且经由所述电布线板，所述绝缘树脂层，所述第一绝缘层和所述第二绝缘层辐射由所述半导体元件产生的热量 第二绝缘层。
-
8.发明授权
公开(公告)号：US5941916A
公开(公告)日：1999-08-24
申请号：US667646
申请日：1996-06-21
申请人： Mitsuru Watabe , Shoji Sasaki , Hideaki Ishikawa
发明人： Mitsuru Watabe , Shoji Sasaki , Hideaki Ishikawa
CPC分类号： F02D41/222 , F02D41/1454 , F02D41/1494 , F02D41/1495 , F02D41/20 , F02D41/221 , F02D2041/2024 , F02D2041/2058 , F02D2041/2082 , Y02T10/40
摘要： A driving apparatus is provided including a current detecting device for detecting electric current flowing through elements such as a sensor, a heater and an actuator, and switching devices for controlling electric current through the elements. The number of electric current detecting devices is reduced by using the devices in common. Switching the switching devices on-and-off is repeated. The electric current flowing in the element, which is to be detected, is detected by separation from another electric current that flows in the other elements
摘要翻译： 提供一种驱动装置，其包括用于检测流过诸如传感器，加热器和致动器的元件的电流的电流检测装置，以及用于控制通过元件的电流的开关装置。 通过使用这些装置来减少电流检测装置的数量。 重复切换开关设备的开关。 要检测的元件中流动的电流通过与在其它元件中流动的另一电流分离来检测
-
公开(公告)号：US5661905A
公开(公告)日：1997-09-02
申请号：US477885
申请日：1995-06-07
申请人： Masaaki Nakaura , Hideo Okamoto , Hideaki Ishikawa , Kazuo Yagi
发明人： Masaaki Nakaura , Hideo Okamoto , Hideaki Ishikawa , Kazuo Yagi
CPC分类号： F23D14/46 , F23D14/045 , F23D2210/00 , Y10T29/49348 , Y10T29/49826
摘要： In a method of making a gas burner device, there are steps of symmetrically blanking a first metal plate and deforming it so as to form a first intermediate blank having a bulged portion, bending the first intermediate blank at a symmetrical center thereof to provide a first burner flow path with the bulged portion, and joining end portions of the intermediate blank to form a first burner, blanking a second metal plate and symmetrically deforming it so as to form a second intermediate blank having a bulged portion, bending the second intermediate blank at a symmetrical center thereof to provide a cover plate; and encasing at least an upper end of the first burner with the cover plate to form a slit-like sleeve first hole between the first burner and the cover plate, and forming a second burner flow path communication with a second burner suction hole and the slit-like sleeve fire hole so as to provide a second burner.
摘要翻译： 在制造气体燃烧器装置的方法中，存在对称地冲压第一金属板并使其变形以形成具有凸出部分的第一中间坯料的步骤，将第一中间坯料弯曲在其对称的中心处，以提供第一 具有凸出部分的燃烧器流动路径，以及中间坯料的接合端部以形成第一燃烧器，冲切第二金属板并对称地使其变形，以形成具有凸出部分的第二中间坯料，将第二中间坯料弯曲 一个对称中心，提供一个盖板; 并且用所述盖板至少包围所述第一燃烧器的上端，以在所述第一燃烧器和所述盖板之间形成狭缝状的套筒第一孔，并且形成与第二燃烧器吸入孔和所述狭缝连通的第二燃烧器流路 为了提供第二个燃烧器。
-
公开(公告)号：US5525054A
公开(公告)日：1996-06-11
申请号：US118626
申请日：1993-09-10
申请人： Masaaki Nakaura , Hideo Okamoto , Hideaki Ishikawa , Kazuo Yagi
发明人： Masaaki Nakaura , Hideo Okamoto , Hideaki Ishikawa , Kazuo Yagi
CPC分类号： F23D14/46 , F23D14/045 , F23D2210/00 , Y10T29/49348 , Y10T29/49826
摘要： In a gas burner device having a first burner having a first fire hole formed therein and a second burner having a second fire hole arranged therein, the fire hole is disposed around the first fire hole of a first burner to straddle the first fire hole. The second burner has a common suction hole through which a fuel gas and primary air are supplied to the second fire hole independent of fuel gas and primary air supplied to the first burner.
摘要翻译： 在具有形成有第一火焰孔的第一燃烧器和配置有第二火焰孔的第二燃烧器的气体燃烧器装置中，所述火焰孔围绕所述第一燃烧器的所述第一火孔设置，跨越所述第一火焰孔。 第二燃烧器具有共用的抽吸孔，燃料气体和一次空气不依赖于供应到第一燃烧器的燃料气体和一次空气而被供应到第二火焰孔。
-
-
-
-
-
-
-
-
-
搜索结果
27 条记录 (耗时 0.023 秒)
