公开(公告)号：US08899728B2

公开(公告)日：2014-12-02

申请号：US13949589

申请日：2013-07-24

申请人： Hideaki Nishimura ,  Yukitoshi Tajima ,  Takafumi Sasaki

发明人： Hideaki Nishimura ,  Yukitoshi Tajima ,  Takafumi Sasaki

IPC分类号： B41J2/045 ,  B41J2/14

CPC分类号： B41J2/14 ,  B41J2/14233 ,  B41J2002/14362

摘要： A droplet discharge head includes a nozzle plate provided with a nozzle opening which discharges an ink drop, an actuator substrate which forms a pressurized liquid chamber communicating with the nozzle opening, and is provided with a pressure generator changing a pressure in the pressured liquid chamber, and a common liquid chamber-forming substrate which forms a common liquid chamber to which ink which is supplied to the pressurized liquid chamber is supplied, the common liquid chamber-forming substrate includes a first plate made of a metal material, a second plate made of a resin material provided on one surface of the first plate, and a third plate made of a resin material provided on the other surface of the first plate, and the first plate, the second plate, and the third plate being integrally molded in a thickness direction.

摘要翻译： 液滴喷射头包括：喷嘴板，其具有喷出墨滴的喷嘴开口;形成与喷嘴开口连通的加压液体室的致动器基板，并且设置有压力发生器，其改变加压液体室中的压力; 以及公共液体室形成基板，其形成供给到加压液体室的墨的公共液体室，所述公共液体室形成基板包括由金属材料制成的第一板，由 设置在第一板的一个表面上的树脂材料和设置在第一板的另一个表面上的由树脂材料制成的第三板，并且第一板，第二板和第三板一体地模制成厚度 方向。

公开(公告)号：US09022521B2

公开(公告)日：2015-05-05

申请号：US14010806

申请日：2013-08-27

申请人： Takafumi Sasaki ,  Yukitoshi Tajima

发明人： Takafumi Sasaki ,  Yukitoshi Tajima

IPC分类号： B41J2/015 ,  B41J2/14 ,  B41J2/16

CPC分类号： B41J2/1433 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2002/14362 ,  B41J2202/11

摘要： Disclosed is a droplet discharge head including a nozzle substrate including a nozzle, an individual liquid chamber substrate including an individual liquid chamber, and a common liquid chamber substrate including a common liquid chamber, wherein the substrates are laminated, wherein a portion of a top surface of the common liquid chamber is flexible, wherein the top surface of the common liquid chamber is disposed at a side opposite to another side at which the nozzle plate is disposed, wherein the common liquid chamber has a shape such that one portion of the common liquid chamber is narrowed in a direction in which the substrates are laminated, wherein a height of a wall of the common liquid chamber in the direction in which the substrates are laminated is constant, and wherein the wall is substantially perpendicular to the top surface.

摘要翻译： 公开了一种液滴喷射头，其包括喷嘴基板，喷嘴基板包括喷嘴，包括单独液体室的单独液体室基板和包括公共液体室的公共液体室基板，其中基板被层压，其中顶部表面的一部分 所述公共液体室是柔性的，其中所述公共液体室的顶表面设置在与设置所述喷嘴板的另一侧相对的一侧，其中所述公共液体室具有使得所述公共液体的一部分 室在层叠基板的方向上变窄，其中，在层叠基板的方向上的公共液体室的壁的高度是恒定的，并且其中壁基本上垂直于顶表面。

公开(公告)号：US20140078221A1

公开(公告)日：2014-03-20

申请号：US14010806

申请日：2013-08-27

申请人： Takafumi Sasaki ,  Yukitoshi Tajima

发明人： Takafumi Sasaki ,  Yukitoshi Tajima

IPC分类号： B41J2/14

CPC分类号： B41J2/1433 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2002/14362 ,  B41J2202/11

摘要： Disclosed is a droplet discharge head including a nozzle substrate including a nozzle, an individual liquid chamber substrate including an individual liquid chamber, and a common liquid chamber substrate including a common liquid chamber, wherein the substrates are laminated, wherein a portion of a top surface of the common liquid chamber is flexible, wherein the top surface of the common liquid chamber is disposed at a side opposite to another side at which the nozzle plate is disposed, wherein the common liquid chamber has a shape such that one portion of the common liquid chamber is narrowed in a direction in which the substrates are laminated, wherein a height of a wall of the common liquid chamber in the direction in which the substrates are laminated is constant, and wherein the wall is substantially perpendicular to the top surface.

摘要翻译： 公开了一种液滴喷射头，其包括喷嘴基板，喷嘴基板包括喷嘴，包括单独液体室的单独液体室基板和包括公共液体室的公共液体室基板，其中基板被层压，其中顶部表面的一部分 所述公共液体室是柔性的，其中所述公共液体室的顶表面设置在与设置所述喷嘴板的另一侧相对的一侧，其中所述公共液体室具有使得所述公共液体的一部分 室在层叠基板的方向上变窄，其中，在层叠基板的方向上的公共液体室的壁的高度是恒定的，并且其中壁基本上垂直于顶表面。

公开(公告)号：US20140071199A1

公开(公告)日：2014-03-13

申请号：US14018586

申请日：2013-09-05

申请人： Yukitoshi Tajima ,  Takafumi Sasaki

发明人： Yukitoshi Tajima ,  Takafumi Sasaki

IPC分类号： B41J2/135 ,  B29C33/00

CPC分类号： B41J2/135 ,  B29C33/00 ,  B29C45/162 ,  B29C45/1671 ,  B41J2/161 ,  B41J2/1637

摘要： Disclosed is a composite component molding metal mold including a first metal mold for molding a first molded product, and a second metal mold for molding a second molded product. Each of the first and second metal molds includes a movable mold and a stationary mold. Each of the stationary molds includes a male mold and a female mold, and each of the movable molds includes a male mold and a female mold. A cavity for molding the first molded product is formed by a combination of the female mold of the stationary mold and the male mold of the movable mold, and another cavity for molding the second molded product is formed by another combination. A space which is in communication with the cavity and the other cavity is provided. When an insertion member is inserted into the space, the cavity and the other cavity are isolated.

摘要翻译： 公开了一种复合部件成形金属模具，其包括用于模制第一模制产品的第一金属模具和用于模制第二模制产品的第二金属模具。 第一和第二金属模具中的每一个包括可动模具和固定模具。 每个固定模具包括阳模和阴模，并且每个可移动模具包括阳模和阴模。 通过固定模具的阴模和可动模的阳模的组合形成用于模制第一模制产品的空腔，并且通过另一组合形成用于模制第二模制产品的另一空腔。 提供了与空腔和另一腔连通的空间。 当插入构件插入到空间中时，空腔和另一腔被隔离。

公开(公告)号：US08868228B2

公开(公告)日：2014-10-21

申请号：US13286443

申请日：2011-11-01

申请人： Toshiaki Otsuki ,  Takafumi Sasaki

发明人： Toshiaki Otsuki ,  Takafumi Sasaki

IPC分类号： G06F19/00 ,  G05B19/416 ,  G05B19/41

CPC分类号： G05B19/41 ,  G05B19/416

摘要： When a numerical controller executes a tool-center-point control in which a path of a tool center point with respect to a workpiece is instructed, and the workpiece is machined along the instructed path based on a speed instruction, the numerical controller sets the speed instruction so that the speed instruction is a synthesis speed with respect to a synthesis distance of a relative moving distance between the workpiece and a tool center point and a tool-direction changing distance due to a relative change in a tool direction with respect to the workpiece by a rotary axis. The numerical controller interpolates a position of a linear axis and a position of a rotary axis by the tool-center-point control according to the synthesis speed and drives the linear axis and the rotary axis to the position of the linear axis and the position of the rotary axis created by the interpolation.

摘要翻译： 当数字控制器执行其中指示了工具中心点的路径相对于工件的工具中心点控制，并且基于速度指令沿着指示路径加工工件时，数字控制器设定速度 指令，使得速度指令是相对于工件与刀具中心点之间的相对移动距离的合成距离和由于刀具方向相对于工件的相对变化而产生的刀具方向变化距离的合成速度 通过旋转轴。 数值控制器根据合成速度通过刀具中心点控制来插入线性轴的位置和旋转轴的位置，并将线性轴和旋转轴驱动到直线轴的位置和位置 由内插产生的旋转轴。

公开(公告)号：US08450220B2

公开(公告)日：2013-05-28

申请号：US12825005

申请日：2010-06-28

申请人： Takafumi Sasaki ,  Sadao Nakashima ,  Yoshinori Imai ,  Koei Kuribayashi

发明人： Takafumi Sasaki ,  Sadao Nakashima ,  Yoshinori Imai ,  Koei Kuribayashi

IPC分类号： H01L21/469

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/4412 ,  C23C16/45514 ,  C23C16/45578 ,  C23C16/54 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02529

摘要： There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.

摘要翻译： 提供了一种用于在高温条件下生长SiC外延膜的衬底处理装置，半导体器件的制造方法和制造衬底的方法。 基板处理装置包括：反应室; 第一气体供给系统，其配置为至少供给含有硅原子的气体和含有氯原子的气体，或者含有硅和氯原子的气体; 构造成供给至少一种还原气体的第二气体供给系统; 第三气体供给系统，被配置为至少提供含有碳原子的气体; 连接到第一气体供应系统或第一和第三气体供应系统的第一气体供应喷嘴; 连接到第二气体供应系统或第二和第三气体供应系统的第二气体供应喷嘴; 以及控制器，被配置为控制第一至第三气体供应系统。

公开(公告)号：US08409352B2

公开(公告)日：2013-04-02

申请号：US13036330

申请日：2011-02-28

申请人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

发明人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

IPC分类号： C23C16/00 ,  C23C16/455

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/45578 ,  H01L21/02529 ,  H01L21/67109

摘要： An apparatus including a reaction chamber in which substrates are stacked; a first gas supply nozzle installed in a region in which the substrates are stacked; a second gas supply nozzle installed in a different position; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the substrates, a line of which is branched in a direction of the second gas supply nozzle, and including a first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the substrates, a line of which is branched in a direction of the first gas supply nozzle, and including a second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the substrates are stacked.

摘要翻译： 一种装置，包括堆叠基板的反应室; 安装在基板堆叠的区域中的第一气体供给喷嘴; 安装在不同位置的第二气体供给喷嘴; 第一分支喷嘴，其在与所述基板的主表面平行的方向上安装在所述第一气体供给喷嘴处，所述第一分支喷嘴的管线沿所述第二气体供给喷嘴的方向分支，并且包括第一气体供给口; 以及第二分支喷嘴，其沿着与所述基板的主表面平行的方向安装在所述第二气体供给喷嘴上，所述第二分支喷嘴的管线沿所述第一气体供给喷嘴的方向分支，并且包括第二气体供给口; 其中所述第一气体供给口和所述第二气体供给口沿着所述基板堆叠的方向彼此相邻地安装。

公开(公告)号：US20120220108A1

公开(公告)日：2012-08-30

申请号：US13406056

申请日：2012-02-27

申请人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

发明人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

IPC分类号： H01L21/20 ,  H01L21/306 ,  C23C16/455

CPC分类号： H01L21/67109 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4587 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757

摘要： When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

摘要翻译： 当在1500℃至1700℃的超高温下进行诸如SiC外延生长的处理时，可以将成膜气体降低至歧管的耐热温度，并且可以提高膜质量均匀性。 基板处理装置包括用于处理多个基板的反应室，用于保持多个基板的船，用于向多个基板供给成膜气体的气体供给喷嘴，用于排出成膜的排气口 供应到反应室的气体，限定比由反应室和船的内壁限定的第一流动路径窄的第二流动路径的热交换部分，以及安装在多个 底物。

公开(公告)号：US20120220107A1

公开(公告)日：2012-08-30

申请号：US13405638

申请日：2012-02-27

申请人： Masanao Fukuda ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Daisuke Hara

发明人： Masanao Fukuda ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Daisuke Hara

IPC分类号： H01L21/20 ,  B65D85/00 ,  C30B25/12

CPC分类号： H01L21/67757 ,  H01L21/67309

摘要： Provided is a substrate processing apparatus having a stack structure of wafers that can endure a high temperature without bad influence on film-forming precision. The stack structure includes a holder base (110) configured to hold a wafer (14) at an inner circumference side thereof, and boat columns (31a to 31c) each including a holder retainer (HS) configured to hold an outer circumference side of the holder base (110), wherein an outer diameter of the holder base (110) is larger than that of the wafer (14), and the holder base (110) is detachable from the holder retainers (HS).

摘要翻译： 提供一种具有可承受高温而不影响成膜精度的晶片的堆叠结构的基板处理装置。 所述堆叠结构包括构造成在其内周侧保持晶片（14）的保持器基座（110）和每个包括保持器保持器（HS）的船柱（31a至31c），所述保持器保持器（HS）构造成保持所述 保持器基座（110），其中保持器基座（110）的外径大于晶片（14）的外径，并且保持器基座（110）可从保持器保持器（HS）拆卸。

公开(公告)号：US08041447B2

公开(公告)日：2011-10-18

申请号：US12192590

申请日：2008-08-15

申请人： Toshiaki Otsuki ,  Soichiro Ide ,  Takafumi Sasaki

发明人： Toshiaki Otsuki ,  Soichiro Ide ,  Takafumi Sasaki

IPC分类号： G05B13/02 ,  G05B19/25 ,  G05B19/41 ,  G06F19/00

CPC分类号： G05B19/4086 ,  G05B2219/35557 ,  G05B2219/50049

摘要： A numerical controller controlling a 5-axis machine tool compensates setting error that arises when a workpiece is set on the table. Error in the three linear axes and the two rotation axes are compensated using preset error amounts to keep the calculated tool position and tool direction in a command coordinate system. If a trigonometric function used for error compensation has a plurality of solution sets, the solution set closest to the tool direction in the command coordinate system is selected from the plurality of solution sets and used as the positions of the two rotation axes compensated in the above error compensation.

摘要翻译： 控制5轴机床的数字控制器可以补偿工件设置在工作台上时产生的设定误差。 三个直线轴的误差和两个旋转轴的补偿使用预设的误差量，以将计算出的刀具位置和刀具方向保持在命令坐标系中。 如果用于误差补偿的三角函数具有多个解集，则从多个解集合中选择最靠近命令坐标系中的刀具方向的解，并将其用作在上述中补偿的两个旋转轴的位置 误差补偿。