公开(公告)号：US09028614B2

公开(公告)日：2015-05-12

申请号：US13406056

申请日：2012-02-27

申请人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

发明人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/673 ,  H01L21/677 ,  C23C16/32 ,  C23C16/44

CPC分类号： H01L21/67109 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4587 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757

摘要： When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

摘要翻译： 当在1500℃至1700℃的超高温下进行诸如SiC外延生长的处理时，可以将成膜气体降低至歧管的耐热温度，并且可以提高膜质量均匀性。 基板处理装置包括用于处理多个基板的反应室，用于保持多个基板的船，用于向多个基板供给成膜气体的气体供给喷嘴，用于排出成膜的排气口 供应到反应室的气体，限定比由反应室和船的内壁限定的第一流动路径窄的第二流动路径的热交换部分，以及安装在多个 底物。

公开(公告)号：US20120220108A1

公开(公告)日：2012-08-30

申请号：US13406056

申请日：2012-02-27

申请人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

发明人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

IPC分类号： H01L21/20 ,  H01L21/306 ,  C23C16/455

CPC分类号： H01L21/67109 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4587 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757

摘要： When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

摘要翻译： 当在1500℃至1700℃的超高温下进行诸如SiC外延生长的处理时，可以将成膜气体降低至歧管的耐热温度，并且可以提高膜质量均匀性。 基板处理装置包括用于处理多个基板的反应室，用于保持多个基板的船，用于向多个基板供给成膜气体的气体供给喷嘴，用于排出成膜的排气口 供应到反应室的气体，限定比由反应室和船的内壁限定的第一流动路径窄的第二流动路径的热交换部分，以及安装在多个 底物。

公开(公告)号：US20120220107A1

公开(公告)日：2012-08-30

申请号：US13405638

申请日：2012-02-27

申请人： Masanao Fukuda ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Daisuke Hara

发明人： Masanao Fukuda ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Daisuke Hara

IPC分类号： H01L21/20 ,  B65D85/00 ,  C30B25/12

CPC分类号： H01L21/67757 ,  H01L21/67309

摘要： Provided is a substrate processing apparatus having a stack structure of wafers that can endure a high temperature without bad influence on film-forming precision. The stack structure includes a holder base (110) configured to hold a wafer (14) at an inner circumference side thereof, and boat columns (31a to 31c) each including a holder retainer (HS) configured to hold an outer circumference side of the holder base (110), wherein an outer diameter of the holder base (110) is larger than that of the wafer (14), and the holder base (110) is detachable from the holder retainers (HS).

摘要翻译： 提供一种具有可承受高温而不影响成膜精度的晶片的堆叠结构的基板处理装置。 所述堆叠结构包括构造成在其内周侧保持晶片（14）的保持器基座（110）和每个包括保持器保持器（HS）的船柱（31a至31c），所述保持器保持器（HS）构造成保持所述 保持器基座（110），其中保持器基座（110）的外径大于晶片（14）的外径，并且保持器基座（110）可从保持器保持器（HS）拆卸。

公开(公告)号：US20120156886A1

公开(公告)日：2012-06-21

申请号：US13331123

申请日：2011-12-20

申请人： Kenji Shirako ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yoshinori Imai ,  Daisuke Hara ,  Shuhei Saido ,  Koei Kuribayashi

发明人： Kenji Shirako ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yoshinori Imai ,  Daisuke Hara ,  Shuhei Saido ,  Koei Kuribayashi

IPC分类号： H01L21/306 ,  C01B31/36 ,  C23F1/08

CPC分类号： C23C16/325 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262

摘要： Production efficiency of a substrate (in particular, a substrate on which a SiC epitaxial film is formed) is improved and formation of the film inside a gas supply port is suppressed. This is accomplished by a substrate processing apparatus including a reaction chamber configured to accommodate a plurality of substrates 14, a heating part installed to surround the reaction chamber and configured to heat the reaction chamber, and a first gas supply pipe 60 extending in the reaction chamber, wherein the first gas supply pipe 60 includes a first gas supply port 68 configured to inject a first gas toward the plurality of substrates 14, and first shielding walls installed at both sides of the first gas supply port to expose the first gas supply port 68, the first shielding walls extending toward the plurality of substrates 14 from the first gas supply port 68.

摘要翻译： 改善了基板（特别是其上形成有SiC外延膜的基板）的生产效率，并抑制了气体供给口内的膜的形成。 这是通过一种基板处理装置实现的，该基板处理装置包括：反应室，其构造成容纳多个基板14，加热部分安装成围绕反应室并构造成加热反应室;以及第一气体供给管60，其在反应室 其特征在于，所述第一气体供给管60包括：第一气体供给口68，其配置成朝向所述多个基板14喷射第一气体;以及第一遮蔽壁，设置在所述第一气体供给口的两侧，露出所述第一气体供给口68 第一屏蔽壁从第一气体供给口68向多个基板14延伸。

公开(公告)号：US20090269933A1

公开(公告)日：2009-10-29

申请号：US11991937

申请日：2006-09-22

申请人： Takatomo Yamaguchi ,  Akinori Tanaka ,  Daisuke Hara

发明人： Takatomo Yamaguchi ,  Akinori Tanaka ,  Daisuke Hara

IPC分类号： H01L21/465 ,  C23C16/458 ,  H01L21/677 ,  H01L21/46 ,  C23C14/50

CPC分类号： H01L21/67742 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/67757

摘要： A substrate processing apparatus comprises a processing chamber for storing a substrate and performing a specified processing on the substrate, a substrate holding jig for holding the substrate in the processing chamber, a placement stand capable of moving the substrate holding jig inside and outside the processing chamber while mounting the substrate holding jig, a substrate holding jig movement mechanism for moving the substrate holding jig to a location different from the placement stand while holding the substrate holding jig, and a substrate holding jig movement suppression mechanism for suppressing vertical and horizontal movement of the substrate holding jig in order to keep the substrate holding jig mounted on the placement unit of the substrate holding jig movement mechanism.

摘要翻译： 基板处理装置包括：处理室，用于存储基板并在基板上执行指定的处理;基板保持夹具，用于将基板保持在处理室中;放置台，其能够将处理室内外的基板保持夹具移动 同时安装基板保持夹具，用于在保持基板保持夹具的同时将基板保持夹具移动到与放置台不同的位置的基板保持夹具移动机构，以及用于抑制基板保持夹具的垂直和水平移动的基板保持夹具移动抑制机构 基板保持夹具，以将基板保持夹具安装在基板保持夹具移动机构的放置单元上。

公开(公告)号：US09084298B2

公开(公告)日：2015-07-14

申请号：US13034035

申请日：2011-02-24

申请人： Yukitomo Hirochi ,  Akinori Tanaka ,  Akihiro Sato ,  Takeshi Itoh ,  Daisuke Hara ,  Kenji Shirako ,  Kazuhiro Morimitsu ,  Masanao Fukuda

发明人： Yukitomo Hirochi ,  Akinori Tanaka ,  Akihiro Sato ,  Takeshi Itoh ,  Daisuke Hara ,  Kenji Shirako ,  Kazuhiro Morimitsu ,  Masanao Fukuda

IPC分类号： H05B6/10 ,  H05B6/02

CPC分类号： H05B6/108

摘要： There are provided a substrate processing apparatus capable of suppressing leakage of magnetic field during processing of a substrate. The substrate processing apparatus of the present invention includes: a reaction tube having a processing chamber provided therein to process a substrate; an induction heating unit installed outside of the reaction tube to accommodate the reaction tube, wherein the induction heating unit is configured to electromagnetically induction-heat the processing chamber by generating a magnetic field; an accommodation tube installed outside of the induction heating unit to accommodate the induction heating unit, wherein the accommodation tube accommodates the reaction tube and the induction heating unit in an air-tight manner; a shielding unit made of a conductive material installed to surround an outside of the accommodation tube; and an inert gas supply unit installed in a gap between the reaction tube and the accommodation tube where the induction heating unit is installed, wherein the inert gas supply unit is configured to supply an inert gas into the gap.

摘要翻译： 提供了能够抑制基板的加工过程中的磁场泄漏的基板处理装置。 本发明的基板处理装置包括：反应管，其具有设置在其中的处理室，用于处理基板; 感应加热单元，其安装在所述反应管的外部以容纳所述反应管，其中所述感应加热单元被构造成通过产生磁场对所述处理室进行电磁感应加热; 安装在所述感应加热单元外部以容纳所述感应加热单元的容纳管，其中所述容纳管以气密方式容纳所述反应管和所述感应加热单元; 由导电材料制成的屏蔽单元，该导电材料安装成围绕容纳管的外侧; 以及安装在所述反应管与所述感应加热单元的所述容纳管之间的间隙中的惰性气体供给单元，其中，所述惰性气体供给单元构造成将惰性气体供给到所述间隙。

公开(公告)号：US09082694B2

公开(公告)日：2015-07-14

申请号：US14001510

申请日：2012-02-22

申请人： Shuhei Saido ,  Daisuke Hara ,  Takafumi Sasaki

发明人： Shuhei Saido ,  Daisuke Hara ,  Takafumi Sasaki

IPC分类号： C23C16/00 ,  H01L21/205 ,  C23C16/455 ,  C23C16/46 ,  H01L21/67 ,  H01L21/02

CPC分类号： H01L21/205 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/46 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/67109

摘要： A substrate processing apparatus includes: a processing chamber that accommodates a substrate; a heating portion that is provided so as to surround a accommodating region of the substrate within the processing chamber; a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the accommodating region of the substrate; and a gas heating mechanism that is provided inside the heating portion and that supplies the processing gas from an upstream side of the gas nozzle into the gas nozzle. A ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle.

摘要翻译： 基板处理装置包括：容纳基板的处理室; 加热部，其设置成围绕处理室内的基板的容纳区域; 气体喷嘴，其设置在所述加热部内，并将处理气体供给到所述基板的容纳区域; 以及气体加热机构，其设置在加热部内部，并且将处理气体从气体喷嘴的上游侧供给到气体喷嘴中。 气体加热机构的气体流路中的流路周向长度与流路截面积的比率大于气体流路中的流路周向长度与流路截面积的比 的气体喷嘴。

公开(公告)号：US20130330930A1

公开(公告)日：2013-12-12

申请号：US14001510

申请日：2012-02-22

申请人： Shuhei Saido ,  Daisuke Hara ,  Takafumi Sasaki

发明人： Shuhei Saido ,  Daisuke Hara ,  Takafumi Sasaki

IPC分类号： H01L21/205

CPC分类号： H01L21/205 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/46 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/67109

摘要： A substrate processing apparatus includes: a processing chamber that accommodates a substrate; a heating portion that is provided so as to surround a accommodating region of the substrate within the processing chamber; a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the accommodating region of the substrate; and a gas heating mechanism that is provided inside the heating portion and that supplies the processing gas from an upstream side of the gas nozzle into the gas nozzle. A ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle.

摘要翻译： 基板处理装置包括：容纳基板的处理室; 加热部，其设置成围绕处理室内的基板的容纳区域; 气体喷嘴，其设置在所述加热部内，并将处理气体供给到所述基板的容纳区域; 以及气体加热机构，其设置在加热部内部，并且将处理气体从气体喷嘴的上游侧供给到气体喷嘴中。 气体加热机构的气体流路中的流路周向长度与流路截面积的比率大于气体流路中的流路周向长度与流路截面积的比 的气体喷嘴。

公开(公告)号：US07953582B2

公开(公告)日：2011-05-31

申请号：US11603526

申请日：2006-11-21

申请人： Daisuke Hara ,  Takashi Mitsuhashi ,  Zhigang Wu

发明人： Daisuke Hara ,  Takashi Mitsuhashi ,  Zhigang Wu

IPC分类号： G06G7/48

CPC分类号： G03F7/2061 ,  G03F1/36 ,  G03F1/68

摘要： A method and system for lithography simulation is disclosed. The method and system specify a subject region of a lithography image with a CD marker, specify a threshold intensity over the lithography image, specify a gradient to a threshold value of the threshold intensity, and calculate a sensitivity or ratio of change of an image boundary of the lithography image to lithography process variation.

摘要翻译： 公开了一种用于光刻仿真的方法和系统。 该方法和系统使用CD标记指定光刻图像的主题区域，在光刻图像上指定阈值强度，指定到阈值强度的阈值的梯度，并计算图像边界的灵敏度或变化率 的光刻图像到光刻工艺的变化。

公开(公告)号：US20130272690A1

公开(公告)日：2013-10-17

申请号：US13821336

申请日：2011-09-20

申请人： Yohei Aoki ,  Daisuke Hara ,  Yasuji Nakamura ,  Ryoko Kato

发明人： Yohei Aoki ,  Daisuke Hara ,  Yasuji Nakamura ,  Ryoko Kato

IPC分类号： G03B7/095

CPC分类号： G03B7/095 ,  G03B37/02 ,  H04N5/2251 ,  H04N5/232 ,  H04N5/238

摘要： A dome-type camera includes a camera lens capable of rotating in a tilt direction, a dome cover for covering the camera lens, and an aperture control unit for controlling the amount of aperture of the camera lens. The amount of aperture is set to become smaller from an open value toward a closed value in accordance with the tilt angle of the camera lens becoming smaller from a zenith direction of the dome cover toward a horizontal direction. According to this dome-type camera, a desirable low tilt angle image with a reduced blur may be obtained even with a megapixel dome camera.

摘要翻译： 一种圆顶型照相机包括能够在倾斜方向上旋转的相机透镜，用于覆盖照相机镜头的半球罩，以及用于控制照相机镜头的光圈量的光圈​​控制单元。 根据照相机镜头从圆顶盖的顶点方向向水平方向的天顶方向变小的倾斜角，将开口量设定为从打开值朝向闭合值变小。 根据该圆顶型照相机，即使用百万像素的球型照相机，也可以获得具有减小的模糊的期望的低倾角图像。