公开(公告)号：US09028614B2

公开(公告)日：2015-05-12

申请号：US13406056

申请日：2012-02-27

申请人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

发明人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/673 ,  H01L21/677 ,  C23C16/32 ,  C23C16/44

CPC分类号： H01L21/67109 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4587 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757

摘要： When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

摘要翻译： 当在1500℃至1700℃的超高温下进行诸如SiC外延生长的处理时，可以将成膜气体降低至歧管的耐热温度，并且可以提高膜质量均匀性。 基板处理装置包括用于处理多个基板的反应室，用于保持多个基板的船，用于向多个基板供给成膜气体的气体供给喷嘴，用于排出成膜的排气口 供应到反应室的气体，限定比由反应室和船的内壁限定的第一流动路径窄的第二流动路径的热交换部分，以及安装在多个 底物。

公开(公告)号：US20120220108A1

公开(公告)日：2012-08-30

申请号：US13406056

申请日：2012-02-27

申请人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

发明人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

IPC分类号： H01L21/20 ,  H01L21/306 ,  C23C16/455

CPC分类号： H01L21/67109 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4587 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757

摘要： When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

摘要翻译： 当在1500℃至1700℃的超高温下进行诸如SiC外延生长的处理时，可以将成膜气体降低至歧管的耐热温度，并且可以提高膜质量均匀性。 基板处理装置包括用于处理多个基板的反应室，用于保持多个基板的船，用于向多个基板供给成膜气体的气体供给喷嘴，用于排出成膜的排气口 供应到反应室的气体，限定比由反应室和船的内壁限定的第一流动路径窄的第二流动路径的热交换部分，以及安装在多个 底物。

公开(公告)号：US20120156886A1

公开(公告)日：2012-06-21

申请号：US13331123

申请日：2011-12-20

申请人： Kenji Shirako ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yoshinori Imai ,  Daisuke Hara ,  Shuhei Saido ,  Koei Kuribayashi

发明人： Kenji Shirako ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yoshinori Imai ,  Daisuke Hara ,  Shuhei Saido ,  Koei Kuribayashi

IPC分类号： H01L21/306 ,  C01B31/36 ,  C23F1/08

CPC分类号： C23C16/325 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262

摘要： Production efficiency of a substrate (in particular, a substrate on which a SiC epitaxial film is formed) is improved and formation of the film inside a gas supply port is suppressed. This is accomplished by a substrate processing apparatus including a reaction chamber configured to accommodate a plurality of substrates 14, a heating part installed to surround the reaction chamber and configured to heat the reaction chamber, and a first gas supply pipe 60 extending in the reaction chamber, wherein the first gas supply pipe 60 includes a first gas supply port 68 configured to inject a first gas toward the plurality of substrates 14, and first shielding walls installed at both sides of the first gas supply port to expose the first gas supply port 68, the first shielding walls extending toward the plurality of substrates 14 from the first gas supply port 68.

摘要翻译： 改善了基板（特别是其上形成有SiC外延膜的基板）的生产效率，并抑制了气体供给口内的膜的形成。 这是通过一种基板处理装置实现的，该基板处理装置包括：反应室，其构造成容纳多个基板14，加热部分安装成围绕反应室并构造成加热反应室;以及第一气体供给管60，其在反应室 其特征在于，所述第一气体供给管60包括：第一气体供给口68，其配置成朝向所述多个基板14喷射第一气体;以及第一遮蔽壁，设置在所述第一气体供给口的两侧，露出所述第一气体供给口68 第一屏蔽壁从第一气体供给口68向多个基板14延伸。

公开(公告)号：US20120220107A1

公开(公告)日：2012-08-30

申请号：US13405638

申请日：2012-02-27

申请人： Masanao Fukuda ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Daisuke Hara

发明人： Masanao Fukuda ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Daisuke Hara

IPC分类号： H01L21/20 ,  B65D85/00 ,  C30B25/12

CPC分类号： H01L21/67757 ,  H01L21/67309

摘要： Provided is a substrate processing apparatus having a stack structure of wafers that can endure a high temperature without bad influence on film-forming precision. The stack structure includes a holder base (110) configured to hold a wafer (14) at an inner circumference side thereof, and boat columns (31a to 31c) each including a holder retainer (HS) configured to hold an outer circumference side of the holder base (110), wherein an outer diameter of the holder base (110) is larger than that of the wafer (14), and the holder base (110) is detachable from the holder retainers (HS).

摘要翻译： 提供一种具有可承受高温而不影响成膜精度的晶片的堆叠结构的基板处理装置。 所述堆叠结构包括构造成在其内周侧保持晶片（14）的保持器基座（110）和每个包括保持器保持器（HS）的船柱（31a至31c），所述保持器保持器（HS）构造成保持所述 保持器基座（110），其中保持器基座（110）的外径大于晶片（14）的外径，并且保持器基座（110）可从保持器保持器（HS）拆卸。

公开(公告)号：US09082694B2

公开(公告)日：2015-07-14

申请号：US14001510

申请日：2012-02-22

申请人： Shuhei Saido ,  Daisuke Hara ,  Takafumi Sasaki

发明人： Shuhei Saido ,  Daisuke Hara ,  Takafumi Sasaki

IPC分类号： C23C16/00 ,  H01L21/205 ,  C23C16/455 ,  C23C16/46 ,  H01L21/67 ,  H01L21/02

CPC分类号： H01L21/205 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/46 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/67109

摘要： A substrate processing apparatus includes: a processing chamber that accommodates a substrate; a heating portion that is provided so as to surround a accommodating region of the substrate within the processing chamber; a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the accommodating region of the substrate; and a gas heating mechanism that is provided inside the heating portion and that supplies the processing gas from an upstream side of the gas nozzle into the gas nozzle. A ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle.

摘要翻译： 基板处理装置包括：容纳基板的处理室; 加热部，其设置成围绕处理室内的基板的容纳区域; 气体喷嘴，其设置在所述加热部内，并将处理气体供给到所述基板的容纳区域; 以及气体加热机构，其设置在加热部内部，并且将处理气体从气体喷嘴的上游侧供给到气体喷嘴中。 气体加热机构的气体流路中的流路周向长度与流路截面积的比率大于气体流路中的流路周向长度与流路截面积的比 的气体喷嘴。

公开(公告)号：US20130330930A1

公开(公告)日：2013-12-12

申请号：US14001510

申请日：2012-02-22

申请人： Shuhei Saido ,  Daisuke Hara ,  Takafumi Sasaki

发明人： Shuhei Saido ,  Daisuke Hara ,  Takafumi Sasaki

IPC分类号： H01L21/205

CPC分类号： H01L21/205 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/46 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/67109

摘要： A substrate processing apparatus includes: a processing chamber that accommodates a substrate; a heating portion that is provided so as to surround a accommodating region of the substrate within the processing chamber; a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the accommodating region of the substrate; and a gas heating mechanism that is provided inside the heating portion and that supplies the processing gas from an upstream side of the gas nozzle into the gas nozzle. A ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle.

摘要翻译： 基板处理装置包括：容纳基板的处理室; 加热部，其设置成围绕处理室内的基板的容纳区域; 气体喷嘴，其设置在所述加热部内，并将处理气体供给到所述基板的容纳区域; 以及气体加热机构，其设置在加热部内部，并且将处理气体从气体喷嘴的上游侧供给到气体喷嘴中。 气体加热机构的气体流路中的流路周向长度与流路截面积的比率大于气体流路中的流路周向长度与流路截面积的比 的气体喷嘴。

公开(公告)号：US08901013B2

公开(公告)日：2014-12-02

申请号：US13813493

申请日：2011-08-02

申请人： Kazuhiro Yuasa ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yasuhiro Megawa ,  Masayoshi Minami

发明人： Kazuhiro Yuasa ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yasuhiro Megawa ,  Masayoshi Minami

IPC分类号： H01L21/02 ,  H01L21/3105 ,  H01L21/67

CPC分类号： H01L21/02104 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/3105 ,  H01L21/67017

摘要： An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.

摘要翻译： 将含氧气体和含氢气体供给到加热至第二温度并且压力设定为小于大气压的预反应室中，并且在预反应室内的两种气体之间产生反应 产生反应性物质，并且将反应性物质供应到处理室中并从其中排出，其中容纳加热到第一温度的基底并将压力设定为小于大气压，并且通过 此时的第二温度设定为不小于第一温度的反应物种。

公开(公告)号：US20090029561A1

公开(公告)日：2009-01-29

申请号：US12219131

申请日：2008-07-16

申请人： Masanao Fukuda ,  Kazuhiro Morimitsu ,  Takafumi Sasaki

发明人： Masanao Fukuda ,  Kazuhiro Morimitsu ,  Takafumi Sasaki

IPC分类号： H01L21/283 ,  C23C16/00

CPC分类号： C23C16/45591 ,  C23C16/45578 ,  C30B25/14 ,  C30B25/165

摘要： There is provided a semiconductor processing apparatus comprising a processing tube for housing a substrate support member that supports a plurality of substrates stacked at a prescribed pitch in a vertical direction; a gas supply part that extends in a direction in which the substrates are stacked in the processing tube and that has a plurality of gas supply openings; an exhaust part that opens onto the processing tube; a gas rectifying plate that is disposed in a space between a penumbra of the substrates supported on the substrate support member and an inner wall of the processing tube, and that extends from the gas supply part in a circumferential direction of the processing tube and in the direction in which the substrates are stacked; and a gas flow regulating part disposed in a space in the processing tube that is above a top-most gas supply opening and a top-most substrate and in a space in the processing tube that is below a bottom-most substrate and a bottom-most gas supply opening. A thin film formed on the substrate can be made more uniform.

摘要翻译： 提供了一种半导体处理装置，其包括：处理管，用于容纳基板支撑构件，所述基板支撑构件支撑以垂直方向以规定间距堆叠的多个基板; 气体供给部，其沿着所述基板堆叠在所述处理管中并具有多个气体供给开口的方向延伸; 通向处理管上的排气部分; 气体整流板，其设置在支撑在基板支撑部件上的基板的半暗区与处理管的内壁之间的空间中，并且从处理管的圆周方向从气体供给部延伸， 堆叠基板的方向; 以及气体流量调节部，其设置在所述处理管的空间中，所述空间位于最上面的气体供给开口和最上面的基板之上，并且处于所述处理管的位于最下面的基板之下的空间中， 大部分供气口。 可以使形成在基板上的薄膜更均匀。

公开(公告)号：US20130157474A1

公开(公告)日：2013-06-20

申请号：US13813493

申请日：2011-08-02

申请人： Kazuhiro Yuasa ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yasuhiro Megawa ,  Masayoshi Minami

发明人： Kazuhiro Yuasa ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yasuhiro Megawa ,  Masayoshi Minami

IPC分类号： H01L21/02

CPC分类号： H01L21/02104 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/3105 ,  H01L21/67017

摘要： An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.

摘要翻译： 将含氧气体和含氢气体供给到加热至第二温度并且压力设定为小于大气压的预反应室中，并且在预反应室内的两种气体之间产生反应 产生反应性物质，并且将反应性物质供应到处理室中并从其中排出，其中容纳加热到第一温度的基底并将压力设定为小于大气压，并且通过 此时的第二温度设定为不小于第一温度的反应物种。

公开(公告)号：US20100035440A1

公开(公告)日：2010-02-11

申请号：US12536061

申请日：2009-08-05

申请人： Masanao Fukuda ,  Takafumi Sasaki ,  Kazuhiro Yuasa

发明人： Masanao Fukuda ,  Takafumi Sasaki ,  Kazuhiro Yuasa

IPC分类号： H01L21/465

CPC分类号： H01L21/02238 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45519 ,  C23C16/45546 ,  C23C16/45548 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/52 ,  H01L21/02255 ,  H01L21/31662

摘要： A substrate processing apparatus includes: a reaction tube configured to process a plurality of substrates; a heater configured to heat the inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a first nozzle disposed in an area corresponding to a substrate arrangement area where the plurality of substrates are arranged, and configured to supply hydrogen-containing gas from a plurality of locations of the area into the reaction tube; a second nozzle disposed in the area corresponding to the substrate arrangement area, and configured to supply oxygen-containing gas from a plurality of locations of the area into the reaction tube; an exhaust outlet configured to exhaust the inside of the reaction tube; and a pressure controller configured to control pressure inside the reaction tube to be lower than atmospheric pressure, wherein the first nozzle is provided with a plurality of first gas ejection holes, and the second nozzle is provided with as many second gas ejection holes as at least the plurality of substrates so that the second gas ejection holes correspond to at least the respective substrates.

摘要翻译： 一种基板处理装置，包括：反应管，被配置为处理多个基板; 加热器，其构造成加热反应管的内部; 保持器，其构造成在所述反应管内布置和保持所述多个基板; 第一喷嘴，其设置在与配置有多个基板的基板配置区域对应的区域中，并且构造成将来自该区域的多个位置的含氢气体供给到反应管中; 第二喷嘴，其设置在与所述基板配置区域对应的区域中，并且被配置为将所述区域的多个位置的含氧气体供应到所述反应管中; 排气口，其构造成排出反应管的内部; 以及压力控制器，被配置为将所述反应管内的压力控制为低于大气压力，其中所述第一喷嘴设置有多个第一气体喷射孔，并且所述第二喷嘴设置有至少至少两个第二气体喷射孔 所述多个基板使得所述第二气体喷射孔至少对应于各个基板。