-
公开(公告)号：US20050168253A1
公开(公告)日：2005-08-04
申请号：US11044736
申请日：2005-01-27
摘要： A method and device for generating a clock signal accurately synchronized with a wobble signal including jitter even if there are manufacturing differences between voltage controlled oscillators. The clock signal generation device includes a voltage controlled oscillator for generating a clock signal corresponding to each of a plurality of oscillation characteristics. The clock signal generation device applies a test voltage to a voltage controlled oscillator with a voltage control device and sequentially identifies a plurality of oscillation characteristics set for the voltage controlled oscillator. The clock signal generation device selects one of the identified oscillation characteristics that has a frequency range with a generally middle part in which the frequency of a wobble signal is located and has a smaller gain.
摘要翻译： 一种用于产生与包括抖动的摆动信号精确同步的时钟信号的方法和装置，即使在压控振荡器之间存在制造差异。 时钟信号产生装置包括用于产生对应于多个振荡特性中的每一个的时钟信号的压控振荡器。 时钟信号生成装置利用电压控制装置对压控振荡器施加测试电压，并且顺序地识别为压控振荡器设定的多个振荡特性。 时钟信号生成装置选择具有频率范围的一个识别的振荡特性，该频率范围具有摆动信号的频率位于其中且具有较小增益的大致中间部分。
-
公开(公告)号：US07141961B2
公开(公告)日：2006-11-28
申请号：US11044736
申请日：2005-01-27
IPC分类号： G01R19/00
摘要： A method and device for generating a clock signal accurately synchronized with a wobble signal including jitter even if there are manufacturing differences between voltage controlled oscillators. The clock signal generation device includes a voltage controlled oscillator for generating a clock signal corresponding to each of a plurality of oscillation characteristics. The clock signal generation device applies a test voltage to a voltage controlled oscillator with a voltage control device and sequentially identifies a plurality of oscillation characteristics set for the voltage controlled oscillator. The clock signal generation device selects one of the identified oscillation characteristics that has a frequency range with a generally middle part in which the frequency of a wobble signal is located and has a smaller gain.
摘要翻译： 一种用于产生与包括抖动的摆动信号精确同步的时钟信号的方法和装置，即使在压控振荡器之间存在制造差异。 时钟信号产生装置包括用于产生对应于多个振荡特性中的每一个的时钟信号的压控振荡器。 时钟信号生成装置利用电压控制装置对压控振荡器施加测试电压，并且顺序地识别为压控振荡器设定的多个振荡特性。 时钟信号生成装置选择具有频率范围的一个识别的振荡特性，该频率范围具有摆动信号的频率位于其中并且具有较小增益的大致中间部分。
-
公开(公告)号：US20090153679A1
公开(公告)日：2009-06-18
申请号：US12335179
申请日：2008-12-15
IPC分类号： H04N5/228
CPC分类号： H04N5/23248 , G02B27/646 , H04N5/2254
摘要： An internal CPU, a vibration control equalizer for processing an output signal of a vibration detector for detecting vibration of an imaging apparatus and calculating a vibration signal for determining a driving amount for an optical component on the basis of vibration of the imaging apparatus, a position control equalizer for calculating a position signal for determining a driving amount for the optical component on the basis of position of the optical component, and a control switching section for switching between the internal CPU and an external control circuit for the imaging apparatus for control of the vibration control equalizer and the position control equalizer.
摘要翻译： 内部CPU，振动控制均衡器，用于处理用于检测成像装置的振动的振动检测器的输出信号，并且基于成像装置的振动计算用于确定光学部件的驱动量的振动信号;位置 控制均衡器，用于基于所述光学部件的位置计算用于确定所述光学部件的驱动量的位置信号;以及控制切换部，用于在所述内部CPU与所述摄像装置的外部控制电路之间进行切换， 振动控制均衡器和位置控制均衡器。
-
公开(公告)号：US08212879B2
公开(公告)日：2012-07-03
申请号：US12335179
申请日：2008-12-15
IPC分类号： H04N5/228
CPC分类号： H04N5/23248 , G02B27/646 , H04N5/2254
摘要： An internal CPU, a vibration control equalizer for processing an output signal of a vibration detector for detecting vibration of an imaging apparatus and calculating a vibration signal for determining a driving amount for an optical component on the basis of vibration of the imaging apparatus, a position control equalizer for calculating a position signal for determining a driving amount for the optical component on the basis of position of the optical component, and a control switching section for switching between the internal CPU and an external control circuit for the imaging apparatus for control of the vibration control equalizer and the position control equalizer.
摘要翻译： 内部CPU，振动控制均衡器，用于处理用于检测成像装置的振动的振动检测器的输出信号，并且基于成像装置的振动计算用于确定光学部件的驱动量的振动信号;位置 控制均衡器，用于基于所述光学部件的位置计算用于确定所述光学部件的驱动量的位置信号;以及控制切换部，用于在所述内部CPU与所述摄像装置的外部控制电路之间进行切换， 振动控制均衡器和位置控制均衡器。
-
公开(公告)号：US08564676B2
公开(公告)日：2013-10-22
申请号：US12323884
申请日：2008-11-26
申请人： Tomofumi Watanabe , Hideki Hirayama
发明人： Tomofumi Watanabe , Hideki Hirayama
CPC分类号： H04N5/23248 , H04N5/23258 , H04N5/2328
摘要： A semiconductor device with an anti-shake function includes a logic chip having a digital circuit which obtains a value for vibration of an apparatus based on a vibration detection signal supplied from a vibration detection element to generate a correction signal. The logic chip includes a correction signal processing unit which generates the correction signal, and a control signal output unit which outputs a vibration control signal in accordance with the correction signal to a vibration correction control unit which executes vibration correction control for an optical component in accordance with vibration. The correction signal processing unit includes a vibration computing unit which is capable of executing a plurality of stages of signal processing operations, by dedicated circuits, respectively, and which generates the correction signal from the vibration detection signal, and a central processing unit capable of executing desired computation processing to be performed by the vibration computing unit, and a signal obtained by executing all or a part of the computation processing to be performed by the dedicated circuits by the central processing unit is supplied as the correction signal to the control signal output unit.
摘要翻译： 具有防抖功能的半导体器件包括具有数字电路的逻辑芯片，该数字电路基于从振动检测元件提供的振动检测信号获得装置的振动值，以产生校正信号。 逻辑芯片包括产生校正信号的校正信号处理单元和控制信号输出单元，该控制信号输出单元根据校正信号将振动控制信号输出到振动校正控制单元，该振动校正控制单元根据光学组件执行振动校正控制 振动。 校正信号处理单元包括：振动计算单元，其能够分别通过专用电路执行多级信号处理操作，并且从振动检测信号生成校正信号;以及中央处理单元，其能够执行 由振动计算单元进行的期望的计算处理以及由中央处理单元执行由专用电路执行的计算处理的全部或一部分而获得的信号作为校正信号被提供给控制信号输出单元 。
-
公开(公告)号：US08659669B2
公开(公告)日：2014-02-25
申请号：US12764412
申请日：2010-04-21
申请人： Hideki Hirayama , Naoto Iwata
发明人： Hideki Hirayama , Naoto Iwata
IPC分类号： H04N5/228
CPC分类号： H04N5/23248 , G03B2217/005
摘要： A first high-pass filter comprising a low-pass filter which allows only a frequency component of an input signal less than or equal to a first frequency to pass, a latch unit which latches an output of a low-pass filter according to a control signal, and a calculating unit which outputs a difference between an input signal and an output of the latch unit are provided on an image stabilization circuit. When latching in the latch unit is released, a held value of the latch unit is stepwise changed to the output value of the low-pass filter. Such a first high-pass filter is used in a centering process of an optical element.
摘要翻译： 第一高通滤波器，包括低通滤波器，其仅允许小于或等于第一频率的输入信号的频率分量通过;锁存单元，其根据控制来锁存低通滤波器的输出 信号，以及输出输入信号和锁存单元的输出之间的差的计算单元设置在图像稳定电路上。 当闩锁单元中的锁存被释放时，锁存单元的保持值逐步改变为低通滤波器的输出值。 这种第一高通滤波器用于光学元件的定心过程。
-
公开(公告)号：US08445938B2
公开(公告)日：2013-05-21
申请号：US12933927
申请日：2009-03-23
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/02 , H01L33/025 , H01L33/32
摘要： The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6, and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1. The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6. The third buffer layer 5 serves as a planarized base for growth of the light emitting layer 6 so as to reduce a threading dislocation and a residual distortion in the light emitting layer 6. This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer 5. The third buffer layer 5 is doped with an Si impurity serving as a donor.
摘要翻译： 本发明的氮化物半导体发光层包括用于外延生长的单晶衬底1，第一缓冲层2，n型氮化物半导体层3，第二缓冲层4，第三缓冲层5， 发光层6和p型氮化物半导体层7.第一缓冲层2层压到单晶衬底1的顶侧。将n型氮化物半导体层3层压到 第一缓冲层2的顶面。第三缓冲层5层叠在n型氮化物半导体层3的顶侧，第二缓冲层4插入其间。 发光层6层压到第三缓冲层5的顶侧.p型氮化物半导体层7层压到发光层6的顶侧。第三缓冲层5用作平坦化 从而减少发光层6中的穿透位错和残留变形。该氮化物半导体发光器件通过利用在该发光层6中生成的载流子来减少发光层中的压电场。 第三缓冲层5掺杂有作为供体的Si杂质。
-
8.发明授权Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element 有权蓝宝石衬底，使用蓝宝石衬底的氮化物半导体发光元件，以及氮化物半导体发光元件的制造方法公开(公告)号：US08390023B2
公开(公告)日：2013-03-05
申请号：US12446081
申请日：2007-10-19
IPC分类号： H01L33/00
CPC分类号： H01L21/02661 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/007 , H01L33/16
摘要： The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained. Specifically, c-axis growth can be carried out from the plane of each step as an a-plane on the terrace by vapor phase growth, which is advantageous in the fabrication of a device, in order to grow an excellent GaN single crystal which has been epitaxially grown so that the m-plane is opposite to the surplane of the terrace, and, in the mean time, the steps become integrated (fused), whereby a device can be fabricated from a substrate of a GaN single crystal having no significant threading dislocation. Further, the use of the m-plane can advantageously eliminate the influence of piezo electric fields.
摘要翻译： 本发明提供一种廉价的基板，其可以通过气相生长实现晶体的m面生长。 在蓝宝石衬底中，在生长GaN等的晶体时，准备从m面倾斜预定非常小的角度的偏角平面作为晶体模板的生长表面， 通过抛光工艺制备包括步骤和梯田的逐步底物。 根据上述结构，即使使用通常不形成m面（非极性面）GaN膜的廉价蓝宝石基板作为晶体生长用基板，也可以获得以下的效果。 具体地说，c轴生长可以通过气相生长在平台上作为a平面从每个步骤的平面进行，这在器件的制造中是有利的，以便生长优异的GaN单晶，其具有 被外延生长，使得m平面与平台的平面相对，并且同时，步骤被整合（熔化），由此可以从不具有显着性的GaN单晶的衬底制造器件 穿线错位 此外，使用m面可以有利地消除压电场的影响。
-
9.发明授权公开(公告)号：US08278129B2
公开(公告)日：2012-10-02
申请号：US12622085
申请日：2009-11-19
IPC分类号： H01L21/00
CPC分类号： H01L21/02458 , H01L21/0237 , H01L21/0242 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L33/32
摘要： In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N(0 0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.
摘要翻译： 在制备AlaGabIn（1-ab）N（0 0）的氮化氮半导体层的过程中，AlGaInN层以生长 根据金属有机气相外延（MOPVE）方法，其速率小于0.09μm/ h。 通过本发明的方法制造的AlGaInN层具有低缺陷的高质量，并且提高了内部量子产率。
-
10.发明申请公开(公告)号：US20100270583A1
公开(公告)日：2010-10-28
申请号：US12622085
申请日：2009-11-19
CPC分类号： H01L21/02458 , H01L21/0237 , H01L21/0242 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L33/32
摘要： In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N (0 0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.
摘要翻译： 在制备AlaGabIn（1-ab）N（0 0）的氮化氮半导体层的过程中，AlGaInN层以生长 根据金属有机气相外延（MOPVE）方法，其速率小于0.09μm/ h。 通过本发明的方法制造的AlGaInN层具有低缺陷的高质量，并且提高了内部量子产率。
-
-
-
-
-
-
-
-
-
搜索结果
80 条记录 (耗时 0.02 秒)
