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    Composition for forming etching stopper layer
    3.
    发明申请
    Composition for forming etching stopper layer 审中-公开
    用于形成蚀刻阻挡层的组合物

    公开(公告)号：US20070026667A1

    公开(公告)日：2007-02-01

    申请号：US10574556

    申请日：2004-09-09

    申请人： Yuji Tashiro ,  Hiroyuki Aoki ,  Tomonori Ishikawa

    发明人： Yuji Tashiro ,  Hiroyuki Aoki ,  Tomonori Ishikawa

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/02126 ,  C08G77/52 ,  C09D183/14 ,  H01L21/31116 ,  H01L21/3121 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835

    摘要： An object of the present invention is to provide a composition for formation of etching stopper layer, which can simultaneously realize dry etching selectivity and low permittivity, and a production process of a semiconductor device using the same. This object can be attained by a composition for formation of etching stopper layer, comprising a silicon-containing polymer, the silicon-containing polymer contained in the composition comprising a disilylbenzene structure, and a production process of a semiconductor device comprising forming an etching stopper layer using the composition.

    摘要翻译： 本发明的目的在于提供一种能够同时实现干蚀刻选择性和低介电常数的蚀刻停止层的形成用组合物及使用其的半导体装置的制造方法。 该目的可以通过用于形成蚀刻停止层的组合物来实现，该组合物包括含硅聚合物，包含二甲硅烷基苯结构的组合物中所含的含硅聚合物，以及半导体器件的制造方法，包括形成蚀刻停止层 使用组合。

    Silicon-containing copolymer and method of producing same
    4.
    发明授权
    Silicon-containing copolymer and method of producing same 失效
    含硅共聚物及其制造方法

    公开(公告)号：US5596062A

    公开(公告)日：1997-01-21

    申请号：US516562

    申请日：1995-08-18

    申请人： Yuji Tashiro ,  Kazuo Inoue ,  Tadashi Suzuki

    发明人： Yuji Tashiro ,  Kazuo Inoue ,  Tadashi Suzuki

    IPC分类号： C08G77/60 ,  C08G77/62 ,  C08G77/04

    CPC分类号： C08G77/62 ,  C08G77/60

    摘要： A silicon-containing copolymer is disclosed which has a number average molecular weight of 500-100,000 and which contains the following structural units (I)-(III): ##STR1## wherein R.sup.1, R.sup.2, R.sup.4, R.sup.5, R.sup.6 and R.sup.7 each represent an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkylamino group or an alkylsilyl group and and R.sup.3 and R.sup.8 each represent a divalent aromatic group. The copolymer is produced by reacting an organodihalosilane, a disilyl compound, a diamine and ammonia with each other.

    摘要翻译： 公开了一种数均分子量为500-10000的含硅共聚物，其含有以下结构单元（I） - （III）：（Ⅰ）（Ⅰ） ）其中R1，R2，R4，R5，R6和R7各自表示烷基，烯基，环烷基，芳基，芳烷基，烷基氨基或烷基甲硅烷基，R3和R8各自表示 二价芳族基团。 共聚物通过有机二卤代硅烷，二甲硅烷基化合物，二胺和氨彼此反应制备。

    POSITIVE PHOTOSENSITIVE SILOXANE COMPOSITION
    6.
    发明申请
    POSITIVE PHOTOSENSITIVE SILOXANE COMPOSITION 有权
    正性感光性硅氧烷组合物

    公开(公告)号：US20130216952A1

    公开(公告)日：2013-08-22

    申请号：US13814686

    申请日：2011-08-19

    申请人： Daishi Yokoyama ,  Takashi Fuke ,  Yuji Tashiro ,  Takashi Sekito ,  Toshiaki Nonaka

    发明人： Daishi Yokoyama ,  Takashi Fuke ,  Yuji Tashiro ,  Takashi Sekito ,  Toshiaki Nonaka

    IPC分类号： G03F7/075

    CPC分类号： G03F7/0757 ,  G03F7/022

    摘要： A positive photosensitive siloxane composition containing: a polysiloxane (Ia), which is obtained by hydrolyzing and condensing the silane compound represented by RSi(OR1)3 in general formula (1) and the silane compound represented by Si(OR1)4 in general formula (2) in the presence of a basic catalyst, and a pre-baked film of which has a dissolution rate of 1,000 Å/second or less in a 5 wt % TMAH aqueous solution; a polysiloxane (Ib), which is obtained by hydrolyzing and condensing at least the silane compound represented by general formula (1) in the presence of an acid or basic catalyst, and a pre-baked film of which has a dissolution rate of 100 Å/second or more in a 2.38 wt % TMAH aqueous solution; and a diazonaphthoquinone derivative and solvent. (In the formula: R represents a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, in which any methylene may be replaced by oxygen, or represents an aryl group having 6 to 20 carbon atoms, in which any hydrogen may be replaced by fluorine; and R1 is an alkyl group having 1 to 5 carbon atoms.)

    摘要翻译： 一种正型感光性硅氧烷组合物，其含有聚硅氧烷（Ia），其通过使通式（1）中的RSi（OR 1）3表示的硅烷化合物和通式（1）中的Si（OR 1）4表示的硅烷化合物）通式 （2）在碱性催化剂存在下，其预烘膜在5重量％TMAH水溶液中的溶解速率为1000埃/秒以下。 通过在酸或碱性催化剂的存在下至少使通式（1）表示的硅烷化合物水解和缩合得到的聚硅氧烷（Ib），其预烘膜的溶解速率为 在2.38重量％TMAH水溶液中的/秒以上; 和重氮萘醌衍生物和溶剂。 （式中，R表示碳原子数1〜20的直链状，支链状或环状的烷基，其中任意亚甲基可被氧代替，或表示碳原子数为6〜20的芳基， 被氟取代; R1是具有1至5个碳原子的烷基）

    Silicon-containing copolymer and process for producing the same
    7.
    发明授权
    Silicon-containing copolymer and process for producing the same 有权

    公开(公告)号：US06946536B2

    公开(公告)日：2005-09-20

    申请号：US10399928

    申请日：2002-03-14

    申请人： Yuji Tashiro

    发明人： Yuji Tashiro

    IPC分类号： C08J5/18 ,  C08G77/00 ,  C08G77/54 ,  C08G77/60 ,  C08G77/62 ,  C08L20060101 ,  C08L83/14

    CPC分类号： C08G77/54 ,  C09D183/14

    摘要： A silicon-containing copolymer which comprises units represented by the general formulae (I) and (II) as essential units and ones represented by the general formulae (III) to (VII) as optional units and has a number average molecular weight of 500 to 1,000,000, —(—R1R2Si—A —)p—  (I) —(—R3R4Si—R7—SiR5R6—)q—  (II) —(—R8Si—A—)r—  (III) —(—R9(H)Si—A—)s—  (IV) —(—R1R2Si—NH—R10—NH—)t—  (V) —(—R8Si—NH—R10—NH—)u—  (VI) —(—R9(H)Si—NH—R10—NH—)w—  (VII) wherein A is NH or oxygen, the proportions of these satisfying the relationship 0.01≦Si—O/(Si—N+Si—O)≦0.99.

    POSITIVE PHOTOSENSITIVE SILOXANE COMPOSITION
    8.
    发明申请
    POSITIVE PHOTOSENSITIVE SILOXANE COMPOSITION 有权
    正性感光性硅氧烷组合物

    公开(公告)号：US20140335452A1

    公开(公告)日：2014-11-13

    申请号：US14117433

    申请日：2012-05-15

    申请人： Daishi Yokoyama ,  Takashi Fuke ,  Yuji Tashiro ,  Takashi Sekito ,  Toshiaki Nonaka

    发明人： Daishi Yokoyama ,  Takashi Fuke ,  Yuji Tashiro ,  Takashi Sekito ,  Toshiaki Nonaka

    IPC分类号： G03F7/075

    CPC分类号： G03F7/0757 ,  C08G77/18 ,  C08K5/235 ,  C08L83/00 ,  C08L83/04 ,  G03F7/0233

    摘要： A positive photosensitive siloxane composition comprising at least three types of following polysiloxanes (A), (B) and (C) obtained by hydrolyzing and condensing a silane compound represented by general formula (1) R1nSi (OR2)4-n, a diazonaphthoquinone derivative, and a solvent: a polysiloxane (A) such that if pre-baked the film thereof will be soluble in a 5 weight % TMAH aqueous solution and the solution rate of said film will be 1,000 Å/sec or less; a polysiloxane (B) such that if pre-baked the solution rate of the film thereof will be 4,000 Å/sec or more relative to a 2.38 weight % TMAH aqueous solution; and a polysiloxane (C) such that if pre-baked the solution rate of the film thereof will be between 200 and 3,000 Å/sec relative to a 2.38 weight % TMAH aqueous solution. (In the formula, R1 represents a C1-20 linear or branched cyclic alkyl group, in which any methylene may be substituted by oxygen, or a C6-20 aryl group, in which any hydrogen may be substituted by fluorine; n represents a 0 or a 1; and R2 represents a C1-5 alkyl group.)

    摘要翻译： 包含通过水解和缩合由通式（1）表示的硅烷化合物R1nSi（OR2）4-n，重氮萘醌衍生物（A），（C））所得到的至少三种以下聚硅氧烷（A），（B） 和溶剂：聚硅氧烷（A），使得如果其预烘烤，则其膜可溶于5重量％的TMAH水溶液中，并且所述膜的溶液速率将为1000埃/秒或更小; 聚硅氧烷（B），使得如果预烘焙，则相对于2.38重量％的TMAH水溶液，其膜的溶液速率将为4,000 /秒或更多; 和聚硅氧烷（C），使得如果预烘烤，则相对于2.38重量％的TMAH水溶液，其膜的溶液速率将在200和3000埃之间。 （式中，R 1表示可以被氧取代的任意亚甲基的C 1-20直链状或支链状的烷基或可被氟取代的氢原子的碳原子数为6〜20的芳基，n表示0以上 或1;且R 2表示C 1-5烷基。

    Composition of silicon-containing copolymer, solvent-soluble crosslinked silicon-containing copolymer, and cured articles obtained therefrom
    10.
    发明授权
    Composition of silicon-containing copolymer, solvent-soluble crosslinked silicon-containing copolymer, and cured articles obtained therefrom 有权
    含硅共聚物，溶剂可溶性交联硅含量共聚物和由其获得的固化物的组成

    公开(公告)号：US07371433B2

    公开(公告)日：2008-05-13

    申请号：US10506855

    申请日：2003-04-04

    申请人： Yuji Tashiro

    发明人： Yuji Tashiro

    IPC分类号： B05D3/02

    CPC分类号： H01J11/12 ,  C08G77/54 ,  C08K5/5415 ,  C08K5/5465 ,  C08L83/14 ,  C09D183/14 ,  C09D183/16 ,  G02F1/133345 ,  H01J11/36 ,  H01J11/38 ,  H01J11/48 ,  H01J2211/366 ,  Y10T428/31663

    摘要： A composition comprising a silicon-containing copolymer having a number-average molecular weight of 500 to 1,000,000, having SiO bond in the polymer and containing at least the structural units represented by the following general formulae (I) and (II) and, if necessary, one or more of the structural units represented by the following general formulae (III) to (VII) and a cross-linking agent is reacted at −20 to 100° C. for 1 to 3 hours. The resultant reaction composition is coated on a substrate and cured by heating to a temperature of 150° C. or above, for example, 250° C. to obtain a cured product of a silicon-containing copolymer which has a high heat resistance, a high light transmission, a low relative dielectric constant and a high chemical resistance and which has a strong mechanical strength and a good flexibility. wherein R1 to R6, R8 and R9 each independently represents an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkylamino group, an alkylsilyl group or an alkoxy group, R7 represents a divalent group, R10 represents a divalent aromatic group, and A represents NH or O.

    摘要翻译： 一种组合物，其包含数均分子量为500〜1,000,000的含硅共聚物，在聚合物中具有SiO键，并且至少含有由以下通式（I）和（II）表示的结构单元，并且如有必要 ，由以下通式（III）〜（VII）表示的结构单元中的一种以上，交联剂在-20〜100℃下反应1〜3小时。 将所得反应组合物涂布在基材上，通过加热至150℃以上，例如250℃的温度固化，得到耐热性高的含硅共聚物的固化物， 高透光率，低相对介电常数和高耐化学性，并且具有很强的机械强度和良好的柔韧性。 其中R 1至R 6，R 8和R 9各自独立地表示烷基，烯基 ，环烷基，芳基，芳烷基，烷基氨基，烷基甲硅烷基或烷氧基，R 7表示二价基团，R 10表示 二价芳基，A表示NH或O.