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    Positive photosensitive siloxane composition
    3.
    发明授权
    Positive photosensitive siloxane composition 有权
    正光敏硅氧烷组合物

    公开(公告)号：US08993214B2

    公开(公告)日：2015-03-31

    申请号：US14117433

    申请日：2012-05-15

    申请人： Daishi Yokoyama ,  Takashi Fuke ,  Yuji Tashiro ,  Takashi Sekito ,  Toshiaki Nonaka

    发明人： Daishi Yokoyama ,  Takashi Fuke ,  Yuji Tashiro ,  Takashi Sekito ,  Toshiaki Nonaka

    IPC分类号： G03F7/075 ,  G03F7/039 ,  G03F7/022

    CPC分类号： G03F7/0757 ,  C08G77/18 ,  C08K5/235 ,  C08L83/00 ,  C08L83/04 ,  G03F7/0233

    摘要： A positive photosensitive siloxane composition comprising at least three types of following polysiloxanes (A), (B) and (C) obtained by hydrolyzing and condensing a silane compound represented by general formula (1) R1nSi (OR2)4-n, a diazonaphthoquinone derivative, and a solvent: a polysiloxane (A) such that if pre-baked the film thereof will be soluble in a 5 weight % TMAH aqueous solution and the solution rate of said film will be 1,000 Å/sec or less; a polysiloxane (B) such that if pre-baked the solution rate of the film thereof will be 4,000 Å/sec or more relative to a 2.38 weight % TMAH aqueous solution; and a polysiloxane (C) such that if pre-baked the solution rate of the film thereof will be between 200 and 3,000 Å/sec relative to a 2.38 weight % TMAH aqueous solution. (In the formula, R1 represents a C1-20 linear or branched cyclic alkyl group, in which any methylene may be substituted by oxygen, or a C6-20 aryl group, in which any hydrogen may be substituted by fluorine; n represents a 0 or a 1; and R2 represents a C1-5 alkyl group.)

    摘要翻译： 包含通过水解和缩合由通式（1）表示的硅烷化合物R1nSi（OR2）4-n，重氮萘醌衍生物（A），（C））所得到的至少三种以下聚硅氧烷（A），（B） 和溶剂：聚硅氧烷（A），使得如果其预烘烤，则其膜可溶于5重量％的TMAH水溶液中，并且所述膜的溶液速率将为1000埃/秒或更小; 聚硅氧烷（B），使得如果预烘焙，则相对于2.38重量％的TMAH水溶液，其膜的溶液速率将为4,000 /秒或更多; 和聚硅氧烷（C），使得如果预烘烤，则相对于2.38重量％的TMAH水溶液，其膜的溶液速率将在200和3000埃之间。 （式中，R 1表示可以被氧取代的任意亚甲基的C 1-20直链状或支链状的烷基或可被氟取代的氢原子的碳原子数为6〜20的芳基，n表示0以上 或1;且R 2表示C 1-5烷基。

    Positive photosensitive siloxane composition
    4.
    发明授权
    Positive photosensitive siloxane composition 有权
    正光敏硅氧烷组合物

    公开(公告)号：US08883397B2

    公开(公告)日：2014-11-11

    申请号：US13814686

    申请日：2011-08-19

    申请人： Daishi Yokoyama ,  Takashi Fuke ,  Yuji Tashiro ,  Takashi Sekito ,  Toshiaki Nonaka

    发明人： Daishi Yokoyama ,  Takashi Fuke ,  Yuji Tashiro ,  Takashi Sekito ,  Toshiaki Nonaka

    IPC分类号： G03F7/075 ,  G03F7/039 ,  G03F7/022

    CPC分类号： G03F7/0757 ,  G03F7/022

    摘要： A positive photosensitive siloxane composition containing: a polysiloxane (Ia), which is obtained by hydrolyzing and condensing the silane compound represented by RSi(OR1)3 in general formula (1) and the silane compound represented by Si(OR1)4 in general formula (2) in the presence of a basic catalyst, and a pre-baked film of which has a dissolution rate of 1,000 Å/second or less in a 5 wt % TMAH aqueous solution; a polysiloxane (Ib), which is obtained by hydrolyzing and condensing at least the silane compound represented by general formula (1) in the presence of an acid or basic catalyst, and a pre-baked film of which has a dissolution rate of 100 Å/second or more in a 2.38 wt % TMAH aqueous solution; and a diazonaphthoquinone derivative and solvent. (In the formula: R represents a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, in which any methylene may be replaced by oxygen, or represents an aryl group having 6 to 20 carbon atoms, in which any hydrogen may be replaced by fluorine; and R1 is an alkyl group having 1 to 5 carbon atoms.)

    摘要翻译： 一种正型感光性硅氧烷组合物，其含有：将通式（1）中的RSi（OR 1）3表示的硅烷化合物和通式（1）中的Si（OR 1）4）表示的硅烷化合物水解缩合得到的聚硅氧烷（Ia） （2）在碱性催化剂存在下，其预烘膜在5重量％TMAH水溶液中的溶解速率为1000埃/秒以下; 通过在酸或碱性催化剂的存在下至少使通式（1）表示的硅烷化合物水解和缩合得到的聚硅氧烷（Ib），其预烘膜的溶解速率为 在2.38重量％TMAH水溶液中的/秒以上; 和重氮萘醌衍生物和溶剂。 （式中，R表示碳原子数1〜20的直链状，支链状或环状的烷基，其中任意亚甲基可被氧代替，或表示碳原子数为6〜20的芳基， 被氟取代; R1是具有1至5个碳原子的烷基）

    POSITIVE PHOTOSENSITIVE SILOXANE COMPOSITION
    5.
    发明申请
    POSITIVE PHOTOSENSITIVE SILOXANE COMPOSITION 有权
    正性感光性硅氧烷组合物

    公开(公告)号：US20130216952A1

    公开(公告)日：2013-08-22

    申请号：US13814686

    申请日：2011-08-19

    申请人： Daishi Yokoyama ,  Takashi Fuke ,  Yuji Tashiro ,  Takashi Sekito ,  Toshiaki Nonaka

    发明人： Daishi Yokoyama ,  Takashi Fuke ,  Yuji Tashiro ,  Takashi Sekito ,  Toshiaki Nonaka

    IPC分类号： G03F7/075

    CPC分类号： G03F7/0757 ,  G03F7/022

    摘要： A positive photosensitive siloxane composition containing: a polysiloxane (Ia), which is obtained by hydrolyzing and condensing the silane compound represented by RSi(OR1)3 in general formula (1) and the silane compound represented by Si(OR1)4 in general formula (2) in the presence of a basic catalyst, and a pre-baked film of which has a dissolution rate of 1,000 Å/second or less in a 5 wt % TMAH aqueous solution; a polysiloxane (Ib), which is obtained by hydrolyzing and condensing at least the silane compound represented by general formula (1) in the presence of an acid or basic catalyst, and a pre-baked film of which has a dissolution rate of 100 Å/second or more in a 2.38 wt % TMAH aqueous solution; and a diazonaphthoquinone derivative and solvent. (In the formula: R represents a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, in which any methylene may be replaced by oxygen, or represents an aryl group having 6 to 20 carbon atoms, in which any hydrogen may be replaced by fluorine; and R1 is an alkyl group having 1 to 5 carbon atoms.)

    摘要翻译： 一种正型感光性硅氧烷组合物，其含有聚硅氧烷（Ia），其通过使通式（1）中的RSi（OR 1）3表示的硅烷化合物和通式（1）中的Si（OR 1）4表示的硅烷化合物）通式 （2）在碱性催化剂存在下，其预烘膜在5重量％TMAH水溶液中的溶解速率为1000埃/秒以下。 通过在酸或碱性催化剂的存在下至少使通式（1）表示的硅烷化合物水解和缩合得到的聚硅氧烷（Ib），其预烘膜的溶解速率为 在2.38重量％TMAH水溶液中的/秒以上; 和重氮萘醌衍生物和溶剂。 （式中，R表示碳原子数1〜20的直链状，支链状或环状的烷基，其中任意亚甲基可被氧代替，或表示碳原子数为6〜20的芳基， 被氟取代; R1是具有1至5个碳原子的烷基）

    POSITIVE PHOTOSENSITIVE SILOXANE COMPOSITION
    7.
    发明申请
    POSITIVE PHOTOSENSITIVE SILOXANE COMPOSITION 有权
    正性感光性硅氧烷组合物

    公开(公告)号：US20140335452A1

    公开(公告)日：2014-11-13

    申请号：US14117433

    申请日：2012-05-15

    申请人： Daishi Yokoyama ,  Takashi Fuke ,  Yuji Tashiro ,  Takashi Sekito ,  Toshiaki Nonaka

    发明人： Daishi Yokoyama ,  Takashi Fuke ,  Yuji Tashiro ,  Takashi Sekito ,  Toshiaki Nonaka

    IPC分类号： G03F7/075

    CPC分类号： G03F7/0757 ,  C08G77/18 ,  C08K5/235 ,  C08L83/00 ,  C08L83/04 ,  G03F7/0233

    摘要： A positive photosensitive siloxane composition comprising at least three types of following polysiloxanes (A), (B) and (C) obtained by hydrolyzing and condensing a silane compound represented by general formula (1) R1nSi (OR2)4-n, a diazonaphthoquinone derivative, and a solvent: a polysiloxane (A) such that if pre-baked the film thereof will be soluble in a 5 weight % TMAH aqueous solution and the solution rate of said film will be 1,000 Å/sec or less; a polysiloxane (B) such that if pre-baked the solution rate of the film thereof will be 4,000 Å/sec or more relative to a 2.38 weight % TMAH aqueous solution; and a polysiloxane (C) such that if pre-baked the solution rate of the film thereof will be between 200 and 3,000 Å/sec relative to a 2.38 weight % TMAH aqueous solution. (In the formula, R1 represents a C1-20 linear or branched cyclic alkyl group, in which any methylene may be substituted by oxygen, or a C6-20 aryl group, in which any hydrogen may be substituted by fluorine; n represents a 0 or a 1; and R2 represents a C1-5 alkyl group.)

    摘要翻译： 包含通过水解和缩合由通式（1）表示的硅烷化合物R1nSi（OR2）4-n，重氮萘醌衍生物（A），（C））所得到的至少三种以下聚硅氧烷（A），（B） 和溶剂：聚硅氧烷（A），使得如果其预烘烤，则其膜可溶于5重量％的TMAH水溶液中，并且所述膜的溶液速率将为1000埃/秒或更小; 聚硅氧烷（B），使得如果预烘焙，则相对于2.38重量％的TMAH水溶液，其膜的溶液速率将为4,000 /秒或更多; 和聚硅氧烷（C），使得如果预烘烤，则相对于2.38重量％的TMAH水溶液，其膜的溶液速率将在200和3000埃之间。 （式中，R 1表示可以被氧取代的任意亚甲基的C 1-20直链状或支链状的烷基或可被氟取代的氢原子的碳原子数为6〜20的芳基，n表示0以上 或1;且R 2表示C 1-5烷基。

    COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING SAME
    9.
    发明申请
    COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING SAME 有权
    用于形成精细图案的组合物和使用其的图案形成方法

    公开(公告)号：US20150017587A1

    公开(公告)日：2015-01-15

    申请号：US14344943

    申请日：2012-10-10

    申请人： Tetsuo Okayasu ,  Takashi Sekito ,  Mashiro Ishii

    发明人： Tetsuo Okayasu ,  Takashi Sekito ,  Mashiro Ishii

    IPC分类号： G03F7/40 ,  G03F7/11

    CPC分类号： G03F7/405 ,  C08F220/56 ,  C08F226/02 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0273

    摘要： [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition.[Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.

    摘要翻译： 本发明提供一种能够形成没有诸如表面粗糙度，桥接缺陷和分辨率故障等麻烦的细的负性光致抗蚀剂图案的组合物。 并且还提供使用该组合物的图案形成方法。 解决问题的方法利用化学放大型抗蚀剂组合物在形成负性抗蚀剂图案的过程中，通过对所述图案进行增肥来使抗微细图案形成用组合物小​​型化。 精细图案形成组合物包含含有具有下式（A），（B）或（C）结构的重复单元的聚合物和溶剂。 将该组合物浇铸在通过用有机溶剂显影剂显影获得的负型抗蚀剂图案上，然后加热形成精细图案。