摘要:
A method of supplying an etching gas includes: supplying a first etching gas used in an etching process into a processing container; and supplying a second etching gas used in the etching process into the processing container, in which, when the first etching gas and the second etching gas are switched therebetween, only a small amount of a gas, which is needed as an etching gas before the switching and is not needed as an etching gas after the switching, is continuously supplied into the processing container.
摘要:
In a lead frame for face-down bonding, plural leads (3) are bonded to bumps (2) formed on electrodes of a semiconductor chip (1) by face-down bonding based on ultrasonic wave, and grooves (4) having V-shaped cross section are formed on the leads (3) at tip positions at which the leads (3) are bonded to the bumps (2). The leads comprise a first lead extending in a first direction and a second lead extending in a second direction which is different from the first direction, and all the grooves (4) extend in the same direction irrespective of the direction of the lead (3). Ultrasonic wave bonding is performed in the direction of the V-shaped groove (4) to move the bump (2) in the direction of the V-shaped groove (4) and weld the bump (2) and the lead (3) at the contact surface with the V-shaped groove (4), so that the bonding strength of the bump (2) and the lead (3) can be made uniform.
摘要:
A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.
摘要:
In a semiconductor device, each of a plurality of leads has a chip mounting portion electrically connected to the semiconductor chip through a bump and a lead main body supporting the chip mounting portion. A lead path from the distal end of the lead main body to the bump is bent in X, Y, and Z directions so that the distal end portion of the lead main body and the chip mounting portion are arranged on different levels when viewed from a side surface. The lead main body and the chip mounting portion substantially make a right angle to form an L shape when viewed from an upper side. The semiconductor chip is connected, through bumps, to upper surfaces of distal end portions of the chip mounting portions of the leads on a plane. A molded body seals constituent elements except a part separated from a connection portion between the lead main body and the chip mounting portion, and incorporates a bent portion of the lead main body. Each lead is arranged such that the chip mounting portions are arranged on both sides of a centerline of the semiconductor device in a longitudinal direction to be parallel to the centerline. The L-shaped leads are arranged on one side such that the chip mounting portions oppose each other on a plane. A lead frame and lead bonding are also disclosed.
摘要:
A method of fabricating a chip semiconductor device includes steps in which electrically conductive bumps are provided on electrodes of semiconductor elements on a wafer, an insulating substrate having an electrode pattern is combined onto the wafer so that the electrode pattern is made into contact with the bumps, only the wafer on which the semiconductor elements are provided is divided by grooves into a plurality of chips each of which has a semiconductor element, a liquid resin is flowed into the grooves and onto the chips for subsequent curing the resin, and the cured resin and the insulating substrate are concurrently cut along the grooves so that a plurality of semiconductor devices are formed.
摘要:
A plasma processing apparatus includes a processing chamber the inside of which is maintained in a vacuum; a mounting table configured to mount a target substrate and serve as a lower electrode in the processing chamber; a circular ring-shaped member provided at the mounting table so as to surround a peripheral portion of the target substrate; an upper electrode arranged to face the lower electrode thereabove; and a power feed unit for supplying a high frequency power to the mounting table. The apparatus performs a plasma process on the target substrate by plasma generated in the processing chamber. The circular ring-shaped member includes at least one ring-shaped groove configured to adjust an electric field distribution to a desired distribution in a plasma generation space, and the groove is formed in a surface of the circular ring-shaped member and the surface is on an opposite side to the plasma generation space.
摘要:
An airbag module integrates the components required for gas generation, thereby eliminating the need for a separate inflation component. The airbag module can comprise a cover with a pocket, a gas generant container, an inflatable cushion an upper and lower retainer housing, and an inflation gas generation system in fluid communication with the cushion. The airbag module does not comprise a discrete inflator that is functional outside the assembled airbag module. The gas generant container houses a package of solid gas generating compound. The energetic materials of the propellant do not become functional as a gas generation source until the cover is secured to the lower retainer housing.
摘要:
An apparatus for sealing a resin uses a liquid resin. A substrate has a frame for surrounding the substrate and is provided with a plurality of semiconductor devices. The substrate has a first opening portion. A squeegee guide plate is placed on the frame and has a second opening portion. The second opening portion is larger than first opening portion in size. A first squeegee moves along the squeegee guide plate in a first direction and rakes the liquid resin. The liquid resin is protuberated in order to bury the semiconductor devices. A second squeegee moves along the squeegee guide plate in a second direction opposite to the first direction and further rakes the liquid resin so as to smooth a surface of the liquid resin. A turning mechanism serves to turn the second squeegee in a circular arc form during the movement of the second squeegee.
摘要:
A gas generating system devoid of a booster chamber. The inflator includes a composition having a metal chlorate as a first oxidizer, a primary fuel selected from carboxylic acids, dicarboxylic acids, and mixtures thereof, and a second oxidizer not having perchlorate character. The metal chlorate is provided at about 10-20 wt %, the primary fuel is provided at about 15-45 wt %, and the second oxidizer is provided at about 30-50 wt % stated by weight of the total composition.
摘要:
A gas generating system devoid of a booster chamber. The inflator includes a composition having a metal chlorate as a first oxidizer, a primary fuel selected from carboxylic acids, dicarboxylic acids, and mixtures thereof, and a second oxidizer not having perchlorate character. The metal chlorate is provided at about 10-20 wt %, the primary fuel is provided at about 15-45 wt %, and the second oxidizer is provided at about 30-50 wt % stated by weight of the total composition.