公开(公告)号：US06782817B2

公开(公告)日：2004-08-31

申请号：US10315140

申请日：2002-12-10

申请人： Hideo Izawa ,  Yuichi Yamazaki ,  Yasushi Katagiri

发明人： Hideo Izawa ,  Yuichi Yamazaki ,  Yasushi Katagiri

IPC分类号： B41F1306

CPC分类号： B41F13/06 ,  B65H23/32 ,  B65H2301/33212 ,  B65H2301/517

摘要： A printing machine includes two printing units, each comprising a web feed section, a web printing section connected to the web feed section and a web treating section connected to the web printing section, in which a single-side surface of a continuous web is printed at each of the web printing sections. The printing machine also includes a turn/transfer section at which two the printing units are operatively connected and the continuous web printed by one of the two web printing sections is transferred to the other one thereof through turning and transferring treatment of the continuous web. The printing machine is capable of carrying out double-side printing and single side printing and improving printing efficiency with a relatively small location space or site.

摘要翻译： 印刷机包括两个印刷单元，每个印刷单元包括卷筒纸进给部分，连接到卷筒纸进给部分的幅材印刷部分和连接到幅材印刷部分的卷材处理部分，其中打印连续卷材的单面表面 在每个卷筒印刷部分。 印刷机还包括转动/转印部分，两个印刷单元在该转动/转印部分可操作地连接，并且由两个幅材印刷部分之一印刷的连续幅材通过连续幅材的转动和转印处理被转印到​​另一个。 印刷机能够在相对较小的位置空间或场所进行双面印刷和单面印刷并提高印刷效率。

公开(公告)号：US08710672B2

公开(公告)日：2014-04-29

申请号：US13541954

申请日：2012-07-05

申请人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

发明人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

IPC分类号： H01L21/768

CPC分类号： H01L23/5226 ,  B82Y40/00 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.

摘要翻译： 实施例的半导体器件包括：衬底; 在基板上的第一催化金属膜; 第一催化金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 所述导电膜在所述接触孔的底部，所述导电膜与所述石墨烯电连接; 在所述导电膜上的第二催化金属膜，所述第二催化金属膜用选自氢，氮，氨和稀有气体中的至少一种气体进行等离子体处理; 和第二催化金属膜上的碳纳米管。

公开(公告)号：US08487449B2

公开(公告)日：2013-07-16

申请号：US13215463

申请日：2011-08-23

申请人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

发明人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

IPC分类号： H01L29/70 ,  H01L21/4763

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.

摘要翻译： 根据一个实施例，碳纳米管互连包括第一导电层，绝缘膜，底层催化剂，催化剂失活膜，催化剂膜和碳纳米管。 绝缘膜形成在第一导电层上并包括孔。 在孔的底面上的第一导电层和孔的侧面的绝缘膜上形成催化剂底膜。 在孔中的侧表面上的催化剂底层上形成催化剂失活膜。 在孔的底面的催化剂底层和孔的侧面的催化剂失活膜上形成催化剂膜。 在孔中形成碳纳米管，碳纳米管包括与孔中底表面上的催化剂膜接触的一端。

公开(公告)号：US08398927B2

公开(公告)日：2013-03-19

申请号：US12495004

申请日：2009-06-30

申请人： Yuichi Yamazaki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Mariko Suzuki

发明人： Yuichi Yamazaki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Mariko Suzuki

IPC分类号： B01J19/08

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/16

摘要： A carbon nanotube manufacturing apparatus includes a plasma generating unit that generates plasma including ions, radicals, and electrons, from gas; a carbon nanotube manufacturing unit that manufactures carbon nanotubes from the radicals; a shielding electrode unit that is provided between the plasma generating unit and the carbon nanotube manufacturing unit and prevents the ions and the electrons from entering the carbon nanotube manufacturing unit; and a bias applying unit that applies a voltage to the shielding electrode unit, wherein the shielding electrode unit includes at least two first shielding electrodes that are arranged one above another, each of the first shielding electrodes having at least one opening.

摘要翻译： 碳纳米管制造装置包括：等离子体产生单元，其从气体产生包括离子，自由基和电子的等离子体; 由自由基制造碳纳米管的碳纳米管制造单元; 设置在等离子体产生单元和碳纳米管制造单元之间并防止离子和电子进入碳纳米管制造单元的屏蔽电极单元; 以及向所述屏蔽电极单元施加电压的偏压施加单元，其中所述屏蔽电极单元包括至少两个彼此排列的第一屏蔽电极，每个所述第一屏蔽电极具有至少一个开口。

公开(公告)号：US20130056873A1

公开(公告)日：2013-03-07

申请号：US13224929

申请日：2011-09-02

申请人： Makoto Wada ,  Yuichi Yamazaki ,  Akihiro Kajita ,  Atsuko Sakata

发明人： Makoto Wada ,  Yuichi Yamazaki ,  Akihiro Kajita ,  Atsuko Sakata

IPC分类号： H01L23/532

CPC分类号： H01L23/53276 ,  H01L21/28556 ,  H01L21/76805 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76885 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to an embodiment of the present invention, a device includes a substrate, a base body formed on or above the substrate, and a pair of wirings. The base body has a line shape in a plan view and extends along a length direction. The pair of wirings includes first and second catalyst layers formed on both side surfaces of the base body in the length direction of the base body with sandwiching the base body; and first and second graphene layers formed on both side surfaces of the base body in a manner of contacting the first and second catalyst layers, respectively, and extending along the length direction of the base body, the graphene layers includes a plurality of graphenes laminated perpendicularly with respect to both side surfaces of the base body, respectively.

摘要翻译： 根据本发明的实施例，一种装置包括基板，形成在基板上或上方的基体，以及一对布线。 基体在平面图中具有线状并沿长度方向延伸。 一对配线包括在基体的长度方向上形成在基体的两侧面上的第一和第二催化剂层，夹着基体; 以及分别以与基体的长度方向接触的方式形成在基体的两侧面上的第一和第二石墨烯层，所述石墨烯层包括垂直层叠的多个石墨烯层 分别相对于基体的两个侧面。

公开(公告)号：US20120228614A1

公开(公告)日：2012-09-13

申请号：US13413854

申请日：2012-03-07

申请人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

发明人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02645 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53276 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.

摘要翻译： 根据一个实施例，公开了一种半导体器件。 该器件包括半导体衬底和半导体衬底上方的互连。 互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。 助催化剂层包括与催化剂层接触的部分。 该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。 催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

公开(公告)号：US20110233779A1

公开(公告)日：2011-09-29

申请号：US13052367

申请日：2011-03-21

申请人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

发明人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

IPC分类号： H01L23/532 ,  H01L21/28 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L23/5226 ,  B82Y10/00 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53238 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device includes an interlayer insulation film provided on a substrate including a Cu wiring, a via hole formed in the interlayer insulation film on the Cu wiring, a first metal film selectively formed on the Cu wiring in the via hole, functioning as a barrier to the Cu wiring, and functioning as a promoter of carbon nanotube growth, a second metal film formed at least on the first metal film in the via hole, and functioning as a catalyst of the carbon nanotube growth, and carbon nanotubes buried in the via hole in which the first metal film and the second metal film are formed.

摘要翻译： 根据一个实施例，半导体器件包括设置在包括Cu布线的基板上的层间绝缘膜，形成在Cu布线上的层间绝缘膜中的通孔，选择性地形成在通孔中的Cu布线上的第一金属膜 作为Cu布线的屏障，起到碳纳米管生长的促进剂的功能，至少在通孔中的第一金属膜上形成的第二金属膜，并且用作碳纳米管生长的催化剂，碳 埋藏在其中形成有第一金属膜和第二金属膜的通孔中的纳米管。

公开(公告)号：USD513491S1

公开(公告)日：2006-01-10

申请号：US29219864

申请日：2004-12-23

申请人： Yuichi Yamazaki ,  Jamie Klopp

设计人： Yuichi Yamazaki ,  Jamie Klopp

公开(公告)号：US5408522A

公开(公告)日：1995-04-18

申请号：US704176

申请日：1991-05-22

申请人： Norimitsu Ikehata ,  Takashi Aoki ,  Hideyasu Mori ,  Yuichi Yamazaki ,  Hiroshi Mano ,  Yoshikazu Sano

发明人： Norimitsu Ikehata ,  Takashi Aoki ,  Hideyasu Mori ,  Yuichi Yamazaki ,  Hiroshi Mano ,  Yoshikazu Sano

IPC分类号： H04M11/00 ,  H04M3/00 ,  H04M11/06 ,  H04Q3/58

CPC分类号： H04M11/06

摘要： In a modem pooling system for enabling selective connection of a plurality of data terminal units 5.sub.1 to 5.sub.n to a modem 9, each of the data terminal units 5.sub.1 to 5.sub.n is detected as to whether active or inactive; one data terminal (e.g. 5.sub.1) is selected as a responsive terminal unit from among the data terminal units determined to be active in accordance with a predetermined priority order; and the modem 9 is connected to the selected responsive terminal unit (e.g. 5.sub.1), prior to an incoming call response of the modem 9.

摘要翻译： 在用于使多个数据终端单元51至5n选择性连接到调制解调器9的调制解调器池系统中，检测数据终端单元51至5n中的每一个是活动还是非活动; 从根据预定优先级顺序被确定为有效的数据终端单元中选择一个数据终端（例如51）作为响应终端单元; 并且调制解调器9在调制解调器9的来电响应之前连接到所选择的响应终端单元（例如51）。

公开(公告)号：US08878190B2

公开(公告)日：2014-11-04

申请号：US13555430

申请日：2012-07-23

申请人： Mariko Suzuki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Yuichi Yamazaki

发明人： Mariko Suzuki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Yuichi Yamazaki

IPC分类号： H01L29/15 ,  H01L31/0312 ,  H01L29/66 ,  H01L29/872 ,  H01L21/02 ,  H01L29/861

CPC分类号： H01L21/02527 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02576 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/8613 ,  H01L29/872

摘要： A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of ±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above.

摘要翻译： 根据本实施例的半导体器件包括具有从（100）面倾斜的表面平面的金刚石基板在<011±10度的方向上在10度至40度的范围内，以及n型金刚石半导体 含有磷（P）的层并形成在上述表面上方。