公开(公告)号：US20080118871A1

公开(公告)日：2008-05-22

申请号：US11795988

申请日：2006-01-27

申请人： Hideo Namatsu ,  Mitsuru Sato

发明人： Hideo Namatsu ,  Mitsuru Sato

IPC分类号： G03F7/26

CPC分类号： G03F7/40 ,  H01L21/0273

摘要： A fine and high-accuracy resist pattern, which is excellent in etching resistance, can be formed. Disclosed is a resist pattern forming method, which includes the steps of developing a resist composition having photosensitivity to a predetermined light source through a lithography technique to form a resist pattern 2 on a substrate 1, and bringing the resist pattern 2 into contact with a supercritical processing solution 5′ including a supercritical fluid 3′ which contains a crosslinking agent 4.

摘要翻译： 可以形成耐蚀刻性优异的精细且高精度的抗蚀剂图案。 公开了一种抗蚀剂图案形成方法，其包括通过光刻技术显影对预定光源具有光敏性的抗蚀剂组合物以在基板1上形成抗蚀剂图案2并使抗蚀剂图案2与超临界接触的步骤 处理溶液5'，其包含含有交联剂4的超临界流体3'。

公开(公告)号：US08026047B2

公开(公告)日：2011-09-27

申请号：US11795990

申请日：2006-01-27

申请人： Hideo Namatsu ,  Mitsuru Sato

发明人： Hideo Namatsu ,  Mitsuru Sato

IPC分类号： G03F1/00

CPC分类号： G03F7/16 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/168 ,  G03F7/38

摘要： A fine and high-accuracy pattern, which is also excellent in either or both of high sensitivity and etching resistance can be provided. Disclosed is a resist pattern forming method in which a single- or multi-layered film 2 is formed on a substrate 1 and a resist pattern is formed on the film 2 through a lithography technique including exposure and development, the method comprising performing supercritical processing in which the film 2 is brought into contact with a supercritical processing solution 5′ in which an organic matter 4 is dissolved before the exposure or development.

摘要翻译： 可以提供在高灵敏度和耐蚀刻性中都优异的精细高精度图案。 公开了一种抗蚀剂图案形成方法，其中单层或多层膜2形成在基板1上，并且通过包括曝光和显影的光刻技术在膜2上形成抗蚀剂图案，该方法包括进行超临界处理 膜2与暴露或显影之前有机物4溶解的超临界处理溶液5'接触。

公开(公告)号：US07977036B2

公开(公告)日：2011-07-12

申请号：US11795988

申请日：2006-01-27

申请人： Hideo Namatsu ,  Mitsuru Sato

发明人： Hideo Namatsu ,  Mitsuru Sato

IPC分类号： G03F7/26

CPC分类号： G03F7/40 ,  H01L21/0273

摘要： A fine and high-accuracy resist pattern, which is excellent in etching resistance, can be formed. Disclosed is a resist pattern forming method, which includes the steps of developing a resist composition having photosensitivity to a predetermined light source through a lithography technique to form a resist pattern 2 on a substrate 1, and bringing the resist pattern 2 into contact with a supercritical processing solution 5′ including a supercritical fluid 3′ which contains a crosslinking agent 4.

摘要翻译： 可以形成耐蚀刻性优异的精细且高精度的抗蚀剂图案。 公开了一种抗蚀剂图案形成方法，其包括通过光刻技术显影对预定光源具有光敏性的抗蚀剂组合物以在基板1上形成抗蚀剂图案2并使抗蚀剂图案2与超临界接触的步骤 处理溶液5'，其包含含有交联剂4的超临界流体3'。

公开(公告)号：US20080124648A1

公开(公告)日：2008-05-29

申请号：US11795990

申请日：2006-01-27

申请人： Hideo Namatsu ,  Mitsuru Sato

发明人： Hideo Namatsu ,  Mitsuru Sato

IPC分类号： G03F7/008 ,  G03F7/26

CPC分类号： G03F7/16 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/168 ,  G03F7/38

摘要： A fine and high-accuracy pattern, which is also excellent in either or both of high sensitivity and etching resistance can be provided. Disclosed is a resist pattern forming method in which a single- or multi-layered film 2 is formed on a substrate 1 and a resist pattern is formed on the film 2 through a lithography technique including exposure and development, the method comprising performing supercritical processing in which the film 2 is brought into contact with a supercritical processing solution 5′ in which an organic matter 4 is dissolved before or after the exposure or development.

摘要翻译： 可以提供在高灵敏度和耐蚀刻性中都优异的精细高精度图案。 公开了一种抗蚀剂图案形成方法，其中单层或多层膜2形成在基板1上，并且通过包括曝光和显影的光刻技术在膜2上形成抗蚀剂图案，该方法包括进行超临界处理 膜2与曝光或显影之前或之后溶解有机物4的超临界处理溶液5'接触。

公开(公告)号：US08568534B2

公开(公告)日：2013-10-29

申请号：US13303599

申请日：2011-11-23

申请人： Hidekazu Okamoto ,  Hideo Namatsu

发明人： Hidekazu Okamoto ,  Hideo Namatsu

IPC分类号： G03F7/30 ,  H01L21/033

CPC分类号： H01L21/0337 ,  C11D7/5018 ,  C11D11/0047 ,  G03F7/426 ,  H01L21/31133

摘要： The present invention provides a washing method for a device substrate, capable of sufficiently removing a resist attached to a device substrate, particularly a resist attached to fine pore portions of a pattern having a large aspect ratio.A method for washing a device substrate, which comprises a washing step of removing a resist attached to a device substrate by means of a solvent, wherein the solvent is a composition comprising at least one fluorinated compound selected from the group consisting of a hydrofluoroether, a hydrofluorocarbon and a perfluorocarbon, and a fluorinated alcohol.

摘要翻译： 本发明提供了一种能够充分除去附着在器件基板上的抗蚀剂的器件基板的清洗方法，特别是附着在纵横比大的图案的细孔部分上的抗蚀剂。 一种洗涤装置基板的方法，其包括通过溶剂除去附着在装置基板上的抗蚀剂的洗涤步骤，其中所述溶剂是包含至少一种氟化化合物的组合物，所述氟化化合物选自氢氟醚， 氢氟烃和全氟化碳，以及氟化醇。

公开(公告)号：US20090029894A1

公开(公告)日：2009-01-29

申请号：US12233669

申请日：2008-09-19

申请人： Hidekazu Okamoto ,  Hideo Namatsu

发明人： Hidekazu Okamoto ,  Hideo Namatsu

IPC分类号： G03F7/42

CPC分类号： H01L21/0337 ,  C11D7/5018 ,  C11D11/0047 ,  G03F7/426 ,  H01L21/31133

摘要： The present invention provides a washing method for a device substrate, capable of sufficiently removing a resist attached to a device substrate, particularly a resist attached to fine pore portions of a pattern having a large aspect ratio.A method for washing a device substrate, which comprises a washing step of removing a resist attached to a device substrate by means of a solvent, wherein the solvent is a composition comprising at least one fluorinated compound selected from the group consisting of a hydrofluoroether, a hydrofluorocarbon and a perfluorocarbon, and a fluorinated alcohol.

摘要翻译： 本发明提供了一种能够充分除去附着在器件基板上的抗蚀剂的器件基板的清洗方法，特别是附着在纵横比大的图案的细孔部分上的抗蚀剂。 一种洗涤装置基板的方法，其包括通过溶剂除去附着在装置基板上的抗蚀剂的洗涤步骤，其中所述溶剂是包含至少一种氟化化合物的组合物，所述氟化化合物选自氢氟醚， 氢氟烃和全氟化碳，以及氟化醇。

公开(公告)号：US5376590A

公开(公告)日：1994-12-27

申请号：US5670

申请日：1993-01-19

申请人： Katsuyuki Machida ,  Katsumi Murase ,  Nobuhiro Shimoyama ,  Toshiaki Tsuchiya ,  Junichi Takahashi ,  Kazushige Minegishi ,  Yasuo Takahashi ,  Hideo Namatsu ,  Kazuo Imai

发明人： Katsuyuki Machida ,  Katsumi Murase ,  Nobuhiro Shimoyama ,  Toshiaki Tsuchiya ,  Junichi Takahashi ,  Kazushige Minegishi ,  Yasuo Takahashi ,  Hideo Namatsu ,  Kazuo Imai

IPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/02126 ,  H01L21/02129 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31608 ,  H01L21/76801 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2924/0002

摘要： A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.

摘要翻译： 半导体器件包括由包含悬挂键的第一电介质膜和Si和氢的键合基团构成的层间膜和形成在第一介电膜上的第二电介质膜。

公开(公告)号：US20110067733A1

公开(公告)日：2011-03-24

申请号：US12951241

申请日：2010-11-22

申请人： Hidekazu Okamoto ,  Hideo Namatsu

发明人： Hidekazu Okamoto ,  Hideo Namatsu

IPC分类号： B08B3/00

CPC分类号： H01L21/02063 ,  C11D7/5018 ,  C11D11/0047 ,  H01L21/02057 ,  H05K3/26 ,  H05K2203/095

摘要： To provide a cleaning method capable of favorably removing an object to be cleaned having a plasma polymer formed in a plasma etching step employing a fluorinated gas.A cleaning method comprising an immersion step of immersing an object 1 to be cleaned in a cleaning liquid (fluorinated solvent) 3 containing at least a fluorine compound, wherein in the immersion step, the temperature t of the cleaning liquid 3 is at least the lower one of the normal boiling point of the fluorine compound contained in the cleaning liquid 3 at 1 atm and 100° C., and the atmospheric pressure is such a pressure that the fluorine compound is in a liquid state at the temperature t. Further, a cleaning method comprising an immersion step of immersing an object to be cleaned having a plasma polymer formed in a plasma etching step employing a fluorinated gas, in a cleaning liquid containing a fluorinated compound, wherein the fluorinated compound has a linear or branched perfluoroalkyl group having a number of carbon atoms of at least 5.

摘要翻译： 提供一种能够有利地除去在使用氟化气体的等离子体蚀刻步骤中形成的具有等离子体聚合物的待清洁物体的清洁方法。 一种清洗方法，其特征在于，包括将待清洗对象物1浸渍在至少含有氟化合物的清洗液（氟化溶剂）3）中的浸渍工序，在浸渍工序中，清洗液3的温度t至少为 在1大气压和100℃下清洗液3中含有的氟化合物的正常沸点之一，大气压是在氟化合物在温度t处于液态的压力。 此外，一种清洗方法，其特征在于，在含有氟化化合物的清洗液中，浸渍工序将浸渍具有在等离子体聚合物中形成的等离子体聚合物的等离子体聚合物浸渍在含有氟化化合物的清洗液中，其中，所述氟化化合物具有直链或支链全氟烷基 具有至少5个碳原子数的基团。

公开(公告)号：US06576066B1

公开(公告)日：2003-06-10

申请号：US09724684

申请日：2000-11-28

申请人： Hideo Namatsu

发明人： Hideo Namatsu

IPC分类号： B08B300

CPC分类号： H01L21/02052 ,  F26B5/005 ,  G03F7/40 ,  G03F7/405 ,  Y10S134/902 ,  Y10S438/906

摘要： According to a supercritical drying method of this invention, a substrate having a pattern is dipped in water and rinsed with water. Then, the substrate is placed in the reaction chamber of a predetermined sealable vessel, and surfactant-added liquid carbon dioxide is introduced into the reaction chamber. The substrate is dipped in surfactant-added liquid carbon dioxide, and liquid carbon dioxide is changed to the supercritical state. After that, supercritical carbon dioxide is gasified.

摘要翻译： 根据本发明的超临界干燥方法，将具有图案的基材浸渍在水中并用水冲洗。 然后，将基板放置在预定的可密封容器的反应室中，将表面活性剂添加的液体二氧化碳引入反应室。 将基板浸渍在加入表面活性剂的液体二氧化碳中，液态二氧化碳变为超临界状态。 之后，超临界二氧化碳气化。

公开(公告)号：US5811872A

公开(公告)日：1998-09-22

申请号：US594947

申请日：1996-01-31

申请人： Katsuyuki Machida ,  Katsumi Murase ,  Nobuhiro Shimoyama ,  Toshiaki Tsuchiya ,  Junichi Takahashi ,  Kazushige Minegishi ,  Yasuo Takahashi ,  Hideo Namatsu ,  Kazuo Imai

发明人： Katsuyuki Machida ,  Katsumi Murase ,  Nobuhiro Shimoyama ,  Toshiaki Tsuchiya ,  Junichi Takahashi ,  Kazushige Minegishi ,  Yasuo Takahashi ,  Hideo Namatsu ,  Kazuo Imai

IPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L21/02126 ,  H01L21/02129 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31608 ,  H01L21/76801 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2924/0002

摘要： A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.

摘要翻译： 半导体器件包括由包含悬挂键的第一电介质膜和Si和氢的键合基团构成的层间膜和形成在第一介电膜上的第二电介质膜。