公开(公告)号：US08044703B2

公开(公告)日：2011-10-25

申请号：US12109091

申请日：2008-04-24

申请人： Hiroaki Kenjyo ,  Tadashi Miyazaki ,  Yasushi Goto ,  Naotaka Oda ,  Toshifumi Sato

发明人： Hiroaki Kenjyo ,  Tadashi Miyazaki ,  Yasushi Goto ,  Naotaka Oda ,  Toshifumi Sato

IPC分类号： G06F11/16

CPC分类号： G06F11/183

摘要： Each of APRM units equipped for each of the diversity channels has printed circuit boards having circuit patterns thereon and a circuit description elements installed on the printed circuit board. The circuit description elements are FPGA elements manufactured by mutually different providers for example and implemented an electric circuit described in a hardware description language by a configuration tool. The circuit description elements can be implemented mutually different descriptions of the electric circuit, or can be implemented the electric circuit by mutually different configuration tools. Also, the printed circuit boards for the diversity channels can be different from each other.

摘要翻译： 为每个分集通道配备的每个APRM单元具有其上具有电路图案的印刷电路板和安装在印刷电路板上的电路描述元件。 电路描述元件是由相互不同的提供商制造的FPGA元件，并且通过配置工具实现了以硬件描述语言描述的电路。 电路描述元件可以实现相互不同的电路描述，或者可以通过相互不同的配置工具来实现电路。 此外，用于分集通道的印刷电路板可以彼此不同。

公开(公告)号：US20090315614A1

公开(公告)日：2009-12-24

申请号：US12109091

申请日：2008-04-24

申请人： Hiroaki KENJYO ,  Tadashi Miyazaki ,  Yasushi Goto ,  Naotaka Oda ,  Toshifumi Sato

发明人： Hiroaki KENJYO ,  Tadashi Miyazaki ,  Yasushi Goto ,  Naotaka Oda ,  Toshifumi Sato

IPC分类号： G06F11/16

CPC分类号： G06F11/183

摘要： Each of APRM units equipped for each of the diversity channels has printed circuit boards having circuit patterns thereon and a circuit description elements installed on the printed circuit board. The circuit description elements are FPGA elements manufactured by mutually different providers for example and implemented an electric circuit described in a hardware description language by a configuration tool. The circuit description elements can be implemented mutually different descriptions of the electric circuit, or can be implemented the electric circuit by mutually different configuration tools. Also, the printed circuit boards for the diversity channels can be different from each other.

摘要翻译： 为每个分集通道配备的每个APRM单元具有其上具有电路图案的印刷电路板和安装在印刷电路板上的电路描述元件。 电路描述元件是由相互不同的提供商制造的FPGA元件，并且通过配置工具实现了以硬件描述语言描述的电路。 电路描述元件可以实现相互不同的电路描述，或者可以通过相互不同的配置工具来实现电路。 此外，用于分集通道的印刷电路板可以彼此不同。

公开(公告)号：US08605851B2

公开(公告)日：2013-12-10

申请号：US11494541

申请日：2006-07-28

申请人： Naotaka Oda ,  Yasushi Goto ,  Tadashi Miyazaki

发明人： Naotaka Oda ,  Yasushi Goto ,  Tadashi Miyazaki

IPC分类号： G21C17/00

CPC分类号： G21C7/08 ,  G21C17/10 ,  G21Y2002/201 ,  G21Y2002/304 ,  G21Y2004/30 ,  G21Y2004/40 ,  Y02E30/39

摘要： To provide a rod block monitor in which irrespective of the selection or non-selection of a control rod, such a process is repeatedly executed that gain adjustment is performed at fixed intervals at all times to match a local area average value of signals of neutron detectors surrounding the control rod with a nuclear reactor average power and a block level appropriate to the local area average value of the neutron detector signals after the gain adjustment is set.

摘要翻译： 为了提供一种棒状监视器，其中不管选择或不选择控制杆，这种处理被重复地执行，总是以固定的间隔执行增益调整以匹配中子检测器的信号的局部平均值 围绕具有核反应堆平均功率的控制棒，并且在设置增益调整之后，适合于中子探测器信号的局部平均值的块电平。

公开(公告)号：US20070063839A1

公开(公告)日：2007-03-22

申请号：US11494541

申请日：2006-07-28

申请人： Naotaka Oda ,  Yasushi Goto ,  Tadashi Miyazaki

发明人： Naotaka Oda ,  Yasushi Goto ,  Tadashi Miyazaki

IPC分类号： G08B21/00

CPC分类号： G21C7/08 ,  G21C17/10 ,  G21Y2002/201 ,  G21Y2002/304 ,  G21Y2004/30 ,  G21Y2004/40 ,  Y02E30/39

摘要： To provide a rod block monitor in which irrespective of the selection or non-selection of a control rod, such a process is repeatedly executed that gain adjustment is performed at fixed intervals at all times to match a local area average value of signals of neutron detectors surrounding the control rod with a nuclear reactor average power and a block level appropriate to the local area average value of the neutron detector signals after the gain adjustment is set.

摘要翻译： 为了提供一种棒状监视器，其中不管选择或不选择控制杆，这种处理被重复地执行，总是以固定的间隔执行增益调整以匹配中子检测器的信号的局部平均值 围绕具有核反应堆平均功率的控制棒，并且在设置增益调整之后，适合于中子探测器信号的局部平均值的块电平。

公开(公告)号：US08327706B2

公开(公告)日：2012-12-11

申请号：US12832965

申请日：2010-07-08

申请人： Heewon Jeong ,  Yasushi Goto

发明人： Heewon Jeong ,  Yasushi Goto

IPC分类号： G01P15/08

CPC分类号： G01P3/22 ,  G01C19/5747 ,  G01C19/5762

摘要： A high-performance angular rate detecting device is provided. A driving part including a drive frame and a Coriolis frame is levitated by at least two fixing beams which share a fixed end and are extending in a direction orthogonal to a driving direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixed beam and a supporting beam is small, thereby maintaining a vibrating state such as resonance frequency and vibration amplitude constant. Therefore, a high-performance angular rate detecting device which is robust to changes in mounting environment can be obtained.

摘要翻译： 提供了一种高性能角速率检测装置。 包括驱动框架和科里奥利框架的驱动部分通过共享固定端并且沿与驱动方向正交的方向延伸的至少两个固定梁悬浮，从而使驱动部分振动。 即使当通过安装或热波动使基板变形时，产生到固定梁和支撑梁的内应力也小，从而保持振动状态，例如共振频率和振动幅度恒定。 因此，可以获得对安装环境变化坚固的高性能角速度检测装置。

公开(公告)号：US07405588B2

公开(公告)日：2008-07-29

申请号：US10933272

申请日：2004-09-03

申请人： Takayuki Kawahara ,  Masayuki Miyazaki ,  Yasushi Goto ,  Natsuki Yokoyama ,  Takahiro Onai

发明人： Takayuki Kawahara ,  Masayuki Miyazaki ,  Yasushi Goto ,  Natsuki Yokoyama ,  Takahiro Onai

IPC分类号： H03K19/173

CPC分类号： G11C23/00 ,  H03K19/1776 ,  H03K19/1778

摘要： The present invention relates to an LSI in which functions can be changed, and realizes, particularly, a system LSI in which functions are changed by changing connections of the circuit by use of MEMS switches. A bistable MEMS switch which can maintain states, and exhibits optimal stitching property, i.e., the switch has a very small resistance of several Ω or less in an on-state, and has an infinite resistance in an off-state; is employed. An element in which functions can be changed during operation, is produced by utilizing a wiring layer of a CMOS semiconductor to form the MEMS switch. A semiconductor device exhibiting high-degree of freedom for changing functions, high-speed, and having small area, is realized.

摘要翻译： 本发明涉及可以改变功能的LSI，特别是实现通过使用MEMS开关改变电路的连接来改变功能的系统LSI。 可以保持状态并且表现出最佳缝合性能的双稳态MEMS开关，即开关在导通状态下具有几欧姆或更小的非常小的电阻，并且在断开状态下具有无限电阻; 被雇用。 通过使用CMOS半导体的布线层来形成功能可以在操作期间改变的元件来形成MEMS开关。 实现了具有高自由度，高速度，小面积化的高自由度的半导体装置。

公开(公告)号：US20080018709A1

公开(公告)日：2008-01-24

申请号：US11737791

申请日：2007-04-20

申请人： KEI TAKENAKA ,  Yasushi Goto

发明人： KEI TAKENAKA ,  Yasushi Goto

IPC分类号： B41J2/05

CPC分类号： F04B19/006 ,  B01F13/0076 ,  B01L3/502792 ,  B01L2200/10 ,  B01L2300/0816 ,  B01L2300/0819 ,  B01L2300/089 ,  B01L2400/0415

摘要： A liquid conveying substrate comprises: rectangular electrodes which are disposed on the substrate surface and whose surfaces are covered with a dielectric with a water repellent surface; first axial electrode columns where the rectangular electrodes are coupled in an x direction; and second axial electrode columns where the rectangular electrodes are coupled in a y direction. Accordingly, electrodes necessary for conveying liquid droplets can be arranged on one substrate, and the number of mechanisms for controlling the potential can be suppressed.

摘要翻译： 液体输送基板包括：矩形电极，其设置在基板表面上，其表面被具有防水表面的电介质覆盖; 第一轴向电极柱，其中矩形电极沿x方向耦合; 以及第二轴向电极列，其中矩形电极在y方向上耦合。 因此，可以在一个基板上配置用于输送液滴所必需的电极，并且可以抑制用于控制电位的机构的数量。

公开(公告)号：US07199022B2

公开(公告)日：2007-04-03

申请号：US10814627

申请日：2004-04-01

申请人： Kan Yasui ,  Toshiyuki Mine ,  Yasushi Goto ,  Natsuki Yokoyama

发明人： Kan Yasui ,  Toshiyuki Mine ,  Yasushi Goto ,  Natsuki Yokoyama

IPC分类号： H01L21/76

CPC分类号： H01L21/76224 ,  Y10S438/907

摘要： In order to achieve an isolation trench formation process according to the present invention in which the structure of a silicon nitride film liner can be easily controlled and to allow both of reduction of the device feature length and reduction in stress occurring in an isolation trench, the silicon nitride film liner is first deposited on the inner wall of the trench formed on a silicon substrate. The upper surface of a first embedded insulator film for filling the inside of the trench is recessed downward so as to expose an upper end portion of the silicon nitride film liner. Next, the exposed portion of the silicon nitride film liner is converted into non-silicon-nitride type insulator film, such as a silicon oxide film. A second embedded insulator film is then deposited on the upper portion of the first embedded insulator film, and the deposited surface is then planarized.

摘要翻译： 为了实现根据本发明的隔离沟槽形成方法，其中可以容易地控制氮化硅膜衬垫的结构并且允许器件特征长度的减小和在隔离沟槽中发生的应力的减小， 氮化硅膜衬垫首先沉积在形成在硅衬底上的沟槽的内壁上。 用于填充沟槽内部的第一嵌入式绝缘体膜的上表面向下凹入以暴露氮化硅膜衬垫的上端部分。 接下来，将氮化硅膜衬垫的露出部分转换成诸如氧化硅膜的非氮化硅型绝缘膜。 然后将第二嵌入式绝缘膜沉积在第一嵌入式绝缘膜的上部上，然后将沉积的表面平坦化。

公开(公告)号：US07193281B2

公开(公告)日：2007-03-20

申请号：US11296289

申请日：2005-12-08

申请人： Jiro Yugami ,  Natsuki Yokoyama ,  Toshiyuki Mine ,  Yasushi Goto

发明人： Jiro Yugami ,  Natsuki Yokoyama ,  Toshiyuki Mine ,  Yasushi Goto

IPC分类号： H01L29/76

CPC分类号： H01L21/28194 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823456 ,  H01L21/823462 ,  H01L29/42368 ,  H01L29/495 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： There is provided a semiconductor device configured as follows. On a semiconductor substrate, a titanium oxide film which is an insulating film having a higher dielectric constant than that of a silicon dioxide film is formed as a gate insulating film, and a gate electrode is disposed thereon, resulting in a field effect transistor. The end portions in the gate length direction of the titanium oxide film are positioned inwardly from the respective end portions on the source side and on the drain side of the gate electrode, and the end portions of the titanium oxide film are positioned in a region in which the gate electrode overlaps with the source region and the drain region in plan configuration. This semiconductor device operates at a high speed, and is excellent in short channel characteristics and driving current. Further, in the semiconductor device, the amount of metallic elements introduced into a silicon substrate is small.

摘要翻译： 提供如下配置的半导体器件。 在半导体衬底上形成作为绝缘膜的介电常数高于二氧化硅膜的氧化钛膜作为栅极绝缘膜，并且在其上设置栅电极，得到场效应晶体管。 氧化钛膜的栅极长度方向的端部位于栅电极的源极侧和漏极侧的各端部的内侧，氧化钛膜的端部位于 其中栅电极以平面构型与源区和漏区重叠。 该半导体器件以高速度工作，并且具有优异的短沟道特性和驱动电流。 此外，在半导体器件中，导入硅衬底的金属元素的量小。

公开(公告)号：US20070030791A1

公开(公告)日：2007-02-08

申请号：US11483093

申请日：2006-07-10

申请人： Takehiko Hasebe ,  Yasushi Goto ,  Kiyoko Yamanaka

发明人： Takehiko Hasebe ,  Yasushi Goto ,  Kiyoko Yamanaka

IPC分类号： G11B9/00

CPC分类号： G11B9/1436 ,  B82Y10/00

摘要： In a probe memory device, a technique of realizing consistency of high-density recording and high-speed reading/writing is provided. A recording medium is placed to a probe array chip on which a plurality of probes are arranged in such a way as to maintain a constant spacing thereto by adopting a high-stiffness elastic support structure. The recording medium is equipped with a stage scanner that is driven continuously while drawing a constant trajectory on an X-Y plane almost in parallel to a probe array chip plane. The probes are equipped with respective actuators each being driven in a Z direction almost perpendicular to the X-Y plane. Each of the probes is made to write or read by altering a distance between the probe and the recording medium in parallel processing. The X-Y actuator is controlled so that the probe may continue a predetermined cyclic movement. Moreover, a tracking area is provided in a portion of the recording medium, and a trajectory of the probe by actuation is controlled so as to have a fixed geometry.

摘要翻译： 在探针存储装置中，提供了实现高密度记录和高速读/写一致性的技术。 将记录介质放置在探针阵列芯片上，通过采用高刚度弹性支撑结构，多个探针以其保持恒定间隔的方式布置在其上。 记录介质配备有台式扫描仪，其在与探针阵列芯片平面几乎平行的X-Y平面上绘制恒定轨迹的同时连续驱动。 探头配备有各自的致动器，每个致动器沿着几乎垂直于X-Y平面的Z方向驱动。 通过在并行处理中改变探头和记录介质之间的距离，使每个探针进行写入或读取。 控制X-Y致动器，使得探头可以继续预定的循环运动。 此外，在记录介质的一部分中设置有跟踪区域，并且通过致动来控制探测器的轨迹以具有固定的几何形状。