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    Organic thin-film transistor and method of manufacturing organic thin-film transistor
    3.
    发明授权
    Organic thin-film transistor and method of manufacturing organic thin-film transistor 有权
    有机薄膜晶体管及制造有机薄膜晶体管的方法

    公开(公告)号：US08916863B2

    公开(公告)日：2014-12-23

    申请号：US14006776

    申请日：2012-09-05

    申请人： Takaaki Ukeda ,  Akihito Miyamoto

    发明人： Takaaki Ukeda ,  Akihito Miyamoto

    IPC分类号： H01L51/10 ,  H01L51/40 ,  H01L51/05

    CPC分类号： H01L51/0545 ,  H01L51/0558 ,  H01L51/102

    摘要： A transistor manufacturing method includes: forming a gate electrode above a substrate; forming a gate insulator above the gate electrode; forming source and drain electrodes above the gate insulator; forming a sacrificial layer above the source and drain electrodes; forming a partition wall layer above the sacrificial layer; forming an opening by patterning the partition wall layer to partly expose the sacrificial layer; removing the sacrificial layer to expose the source and drain electrodes; and forming an organic semiconductor layer to cover the source and drain electrodes and the gate insulator, wherein the source and drain electrodes occupy 50% or more of a surface area of the opening, and the source and drain electrodes are spaced apart at an interval smaller than an average granular diameter of crystals each of which is at least partly positioned above the source or drain electrode.

    摘要翻译： 晶体管制造方法包括：在基板上形成栅电极; 在栅电极上形成栅极绝缘体; 在栅极绝缘体上形成源极和漏极; 在源极和漏极上形成牺牲层; 在所述牺牲层上形成隔壁层; 通过图案化分隔壁层以部分地暴露牺牲层来形成开口; 去除牺牲层以暴露源极和漏极; 以及形成有机半导体层以覆盖源电极和漏电极以及栅极绝缘体，其中源电极和漏电极占开口表面积的50％或更多，源电极和漏电极间隔较小 比晶体的平均颗粒直径至少部分地位于源极或漏极之上。

    THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20140048883A1

    公开(公告)日：2014-02-20

    申请号：US14113971

    申请日：2011-10-20

    申请人： Takaaki Ukeda ,  Akihito Miyamoto

    发明人： Takaaki Ukeda ,  Akihito Miyamoto

    IPC分类号： H01L29/786 ,  H01L29/66

    CPC分类号： H01L29/786 ,  H01L27/1255 ,  H01L27/283 ,  H01L29/6675 ,  H01L29/66772 ,  H01L51/0078 ,  H01L51/0529

    摘要： The organic thin-film transistor according to the present invention includes: a gate electrode line on a substrate in a first region: a first signal line layer in a second region; a gate insulating film covering the gate electrode line and the first signal line layer; bank layers on the gate insulating film; a second signal line layer on the bank layer over the first signal line; a drain electrode and a source electrode line which are located on the bank layers and in at least one opening between the bank layers in the first region; a semiconductor layer located at least in the opening and banked up by the bank layers, the drain electrode, and the source electrode line; and a protection film covering the semiconductor layer.

    摘要翻译： 根据本发明的有机薄膜晶体管包括：第一区域中的衬底上的栅极电极线：第二区域中的第一信号线层; 覆盖所述栅电极线和所述第一信号线层的栅极绝缘膜; 栅极绝缘膜上的堤层; 在第一信号线上的堤层上的第二信号线层; 漏极电极和源电极线，其位于所述堤层和所述第一区域中的所述堤层之间的至少一个开口中; 至少位于开口中并由堤层，漏电极和源极线排列的半导体层; 以及覆盖半导体层的保护膜。

    Non-volatile memory and the fabrication method
    5.
    发明授权
    Non-volatile memory and the fabrication method 有权
    非易失性存储器及其制造方法

    公开(公告)号：US07394090B2

    公开(公告)日：2008-07-01

    申请号：US11798364

    申请日：2007-05-14

    申请人： Kiyoyuki Morita ,  Noboru Yamada ,  Akihito Miyamoto ,  Takashi Ohtsuka ,  Hideyuki Tanaka

    发明人： Kiyoyuki Morita ,  Noboru Yamada ,  Akihito Miyamoto ,  Takashi Ohtsuka ,  Hideyuki Tanaka

    IPC分类号： H01L47/00

    CPC分类号： G11C13/0004 ,  G11C14/009 ,  H01L27/1104 ,  H01L27/24 ,  H01L45/04 ,  H01L45/145

    摘要： A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.

    摘要翻译： 一种非易失性存储器，包括：第一基板（100）和第二基板（110），所述第一基板（100）具有布置成矩阵的多个开关元件（4），并且多个第一电极（18）被连接 至所述开关元件（4），所述第二基板（110）具有导电膜（32）以及其电阻值通过施加电脉冲而改变的记录层（34），其中所述多个第一电极（18）为 由记录层（34）整体覆盖，记录层（34）由此保持在多个第一电极（18）和导电膜（32）之间; 所述第一基板（100）还包括第二电极（22），所述第二电极（22）电连接到所述导电膜（32），其电压保持在设定电平，同时向所述记录层施加电流（ 34）。 这种非易失性存储器以低成本实现高集成度。

    Non-volatile memory and the fabrication method
    6.
    发明申请
    Non-volatile memory and the fabrication method 有权
    非易失性存储器及其制造方法

    公开(公告)号：US20070210362A1

    公开(公告)日：2007-09-13

    申请号：US11798364

    申请日：2007-05-14

    申请人： Kiyoyuki Morita ,  Noboru Yamada ,  Akihito Miyamoto ,  Takashi Ohtsuka ,  Hideyuki Tanaka

    发明人： Kiyoyuki Morita ,  Noboru Yamada ,  Akihito Miyamoto ,  Takashi Ohtsuka ,  Hideyuki Tanaka

    IPC分类号： H01L27/11

    CPC分类号： G11C13/0004 ,  G11C14/009 ,  H01L27/1104 ,  H01L27/24 ,  H01L45/04 ,  H01L45/145

    摘要： A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.

    摘要翻译： 一种非易失性存储器，包括：第一基板（100）和第二基板（110），所述第一基板（100）具有布置成矩阵的多个开关元件（4），并且多个第一电极（18）被连接 至所述开关元件（4），所述第二基板（110）具有导电膜（32）以及其电阻值通过施加电脉冲而改变的记录层（34），其中所述多个第一电极（18）为 由记录层（34）整体覆盖，记录层（34）由此保持在多个第一电极（18）和导电膜（32）之间; 所述第一基板（100）还包括第二电极（22），所述第二电极（22）电连接到所述导电膜（32），其电压保持在设定电平，同时向所述记录层施加电流（ 34）。 这种非易失性存储器以低成本实现高集成度。

    Carbon materials for negative electrode of secondary battery and manufacturing process
    7.
    发明授权
    Carbon materials for negative electrode of secondary battery and manufacturing process 有权
    二次电池负极碳材料及其制造工艺

    公开(公告)号：US06316146B1

    公开(公告)日：2001-11-13

    申请号：US09227807

    申请日：1999-01-11

    申请人： Kazuhiro Watanabe ,  Norishige Nanai ,  Katsuhiro Nichogi ,  Akihito Miyamoto ,  Soji Tsuchiya

    发明人： Kazuhiro Watanabe ,  Norishige Nanai ,  Katsuhiro Nichogi ,  Akihito Miyamoto ,  Soji Tsuchiya

    IPC分类号： H01M458

    CPC分类号： H01M4/583 ,  H01M4/133 ,  H01M4/366 ,  H01M10/0525

    摘要： A carbon material for negative electrode of a secondary battery, in particular lithium-ion secondary battery, is prepared by pyrolysis in an inert gas atmosphere or in a vacuum of a composite resin obtained by dissolving pitch in a pitch-soluble resin such as a nobolac phenol resin as it is, or a resin solidified by curing treatment in a state in which the above composite resin is dispersed in a resin solidified by curing treatment or in an uncured resin having a phenol hydroxyl radical such as resol type phenol resin, followed by pulverization in an inert gas, and further heat treatment in an inert gas atmosphere or in a vacuum. Also, a negative electrode material with which irreversible capacity is small, initial discharge capacity is large, and capacity decrease due to cycles is small can be provided by pyrolyzing in an inert gas atmosphere or in a vacuum powder of a resin such as a resol type phenol resin the primary chain of which containing an aromatic compound, or pyrolyzing in an inert gas atmosphere or in a vacuum in a first step, followed by heat treatment in a vacuum in a second step. By employing these negative electrode materials, it is possible to achieve a higher capacity in lithium-ion secondary batteries.

    摘要翻译： 二次电池用负极碳材料，特别是锂离子二次电池，是通过在惰性气体气氛中或在通过将沥青溶解在树脂中的沥青溶解沥青而得到的复合树脂的真空中进行热解而制备的 或者在将上述复合树脂分散在通过固化处理固化的树脂中的固化处理固化的树脂中，或者在具有酚羟基的未固化树脂如甲阶酚醛树脂型酚醛树脂中固化的树脂，其次是 在惰性气体中粉碎，并在惰性气体气氛或真空中进一步热处理。 此外，可以通过在惰性气体气氛中或在例如甲阶型树脂的真空粉末中热解而提供不可逆容量小的初始放电容量大，循环容量降低小的负极材料 酚醛树脂，其主链含有芳族化合物，或在惰性气体气氛中或在第一步骤的真空中热解，然后在第二步骤中在真空中进行热处理。 通过使用这些负极材料，可以实现锂离子二次电池的高容量化。

    ORGANIC THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC THIN-FILM TRANSISTOR
    8.
    发明申请
    ORGANIC THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC THIN-FILM TRANSISTOR 有权
    有机薄膜晶体管及制造有机薄膜晶体管的方法

    公开(公告)号：US20140014934A1

    公开(公告)日：2014-01-16

    申请号：US14006776

    申请日：2012-09-05

    申请人： Takaaki Ukeda ,  Akihito Miyamoto

    发明人： Takaaki Ukeda ,  Akihito Miyamoto

    IPC分类号： H01L51/05

    CPC分类号： H01L51/0545 ,  H01L51/0558 ,  H01L51/102

    摘要： A transistor manufacturing method includes: forming a gate electrode above a substrate; forming a gate insulator above the gate electrode; forming source and drain electrodes above the gate insulator; forming a sacrificial layer above the source and drain electrodes; forming a partition wall layer above the sacrificial layer; forming an opening by patterning the partition wall layer to partly expose the sacrificial layer; removing the sacrificial layer to expose the source and drain electrodes; and forming an organic semiconductor layer to cover the source and drain electrodes and the gate insulator, wherein the source and drain electrodes occupy 50% or more of a surface area of the opening, and the source and drain electrodes are spaced apart at an interval smaller than an average granular diameter of crystals each of which is at least partly positioned above the source or drain electrode.

    摘要翻译： 晶体管制造方法包括：在基板上形成栅电极; 在栅电极上形成栅极绝缘体; 在栅极绝缘体上形成源极和漏极; 在源极和漏极上形成牺牲层; 在所述牺牲层上形成隔壁层; 通过图案化分隔壁层以部分地暴露牺牲层来形成开口; 去除牺牲层以暴露源极和漏极; 以及形成有机半导体层以覆盖源电极和漏电极以及栅极绝缘体，其中源电极和漏电极占开口表面积的50％或更多，源电极和漏电极间隔较小 比晶体的平均颗粒直径至少部分地位于源极或漏极之上。

    Non-volatile memory and the fabrication method
    9.
    发明申请
    Non-volatile memory and the fabrication method 有权
    非易失性存储器及其制造方法

    公开(公告)号：US20050093043A1

    公开(公告)日：2005-05-05

    申请号：US10980309

    申请日：2004-11-04

    申请人： Kiyoyuki Morita ,  Noboru Yamada ,  Akihito Miyamoto ,  Takashi Ohtsuka ,  Hideyuki Tanaka

    发明人： Kiyoyuki Morita ,  Noboru Yamada ,  Akihito Miyamoto ,  Takashi Ohtsuka ,  Hideyuki Tanaka

    IPC分类号： G11C16/02 ,  H01L27/11 ,  H01L27/24 ,  H01L45/00 ,  H01L29/76 ,  H01L21/48

    CPC分类号： G11C13/0004 ,  G11C14/009 ,  H01L27/1104 ,  H01L27/24 ,  H01L45/04 ,  H01L45/145

    摘要： A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.

    摘要翻译： 一种非易失性存储器，包括：第一基板（100）和第二基板（110），所述第一基板（100）具有布置成矩阵的多个开关元件（4），并且多个第一电极（18）被连接 至所述开关元件（4），所述第二基板（110）具有导电膜（32）以及其电阻值通过施加电脉冲而改变的记录层（34），其中所述多个第一电极（18）为 由记录层（34）整体覆盖，记录层（34）由此保持在多个第一电极（18）和导电膜（32）之间; 所述第一基板（100）还包括第二电极（22），所述第二电极（22）电连接到所述导电膜（32），其电压保持在设定电平，同时向所述记录层施加电流（ 34）。 这种非易失性存储器以低成本实现高集成度。