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    VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS
    2.
    发明申请
    VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS 有权
    垂直孔表面发射激光，垂直孔表面发射激光装置，光传输装置和信息处理装置

    公开(公告)号：US20110058587A1

    公开(公告)日：2011-03-10

    申请号：US12718457

    申请日：2010-03-05

    申请人： Jun Sakurai ,  Ryoji Ishii ,  Hiromi Otoma

    发明人： Jun Sakurai ,  Ryoji Ishii ,  Hiromi Otoma

    IPC分类号： H01S5/183 ,  H01S5/026

    CPC分类号： H01S5/1835 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18388 ,  H01S5/18394 ,  H01S5/3432

    摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector that is a first conductive type and formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector that is a second conductive type and formed on the active region; a current narrowing layer that is located between the first and second semiconductor multilayer reflectors, and in that a conductive region which has anisotropy in a long side direction and a short side direction within the surface which is parallel to a principal surface of the substrate is formed; and a convex lens member that is formed in a beam window which emits a light on the second multilayer reflector, and that has anisotropy in a long side direction and a short side direction within a surface which is parallel to the principal surface of the substrate.

    摘要翻译： 一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器，其是第一导电类型并形成在所述基板上; 形成在所述第一半导体多层反射器上的有源区; 第二半导体多层反射器，其是第二导电类型并形成在有源区上; 位于第一和第二半导体多层反射器之间的电流变窄层，并且形成在与基板的主表面平行的表面内的长边方向和短边方向上具有各向异性的导电区域 ; 以及凸透镜构件，其形成在在所述第二多层反射体上发射光并且在与所述基板的所述主表面平行的表面内的长边方向和短边方向上具有各向异性的光束窗中。

    APPARATUS FOR MEASURING BLOOD FLOW RATE AND METHOD FOR MEASURING BLOOD FLOW RATE
    4.
    发明申请
    APPARATUS FOR MEASURING BLOOD FLOW RATE AND METHOD FOR MEASURING BLOOD FLOW RATE 审中-公开
    用于测量血液流量的装置和用于测量血液流量的方法

    公开(公告)号：US20090209871A1

    公开(公告)日：2009-08-20

    申请号：US12196412

    申请日：2008-08-22

    申请人： Nobuaki Ueki ,  Ryoji Ishii

    发明人： Nobuaki Ueki ,  Ryoji Ishii

    IPC分类号： A61B5/02 ,  A61B5/00

    CPC分类号： A61B5/0261

    摘要： Provided is an apparatus for measuring blood flow rate that includes a light emitting portion for irradiating living tissues with laser light, a photo-detector for detecting at least one of reflection, scattering, or absorption of the laser light, and an operation portion for calculating blood flow rate based on the difference between the spectrum of the laser light from the light emitting portion and the spectrum of the light detected by the photo-detector. The spectrum of the laser light has plural peaks.

    摘要翻译： 本发明提供一种用于测量血液流量的装置，其包括用于用激光照射活组织的发光部分，用于检测激光的反射，散射或吸收中的至少一种的光检测器，以及用于计算 基于来自发光部的激光的光谱与由光检测器检测到的光的光谱之差的血流量。 激光的光谱具有多个峰。

    VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device
    5.
    发明申请
    VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device 有权
    具有改进的高频特性的VCSEL，半导体激光器件，模块和光传输器件

    公开(公告)号：US20080043793A1

    公开(公告)日：2008-02-21

    申请号：US11706597

    申请日：2007-02-15

    申请人： Nobuaki Ueki ,  Naotaka Mukoyama ,  Ryoji Ishii ,  Takeshi Nakamura

    发明人： Nobuaki Ueki ,  Naotaka Mukoyama ,  Ryoji Ishii ,  Takeshi Nakamura

    IPC分类号： H01S5/183

    CPC分类号： H01S5/18311 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/06226 ,  H01L2924/00014

    摘要： A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the substrate and electrically connected with the first semiconductor layer, a second electrode wiring formed on the main surface of the substrate and electrically connected with the second semiconductor layer, and a light emitting portion formed on the substrate for emitting laser light. A contact portion at which the first electrode wiring is electrically connected to the first semiconductor layer is formed in a range equal to or greater than π/2 radians and within π radians, centering on the light emitting portion.

    摘要翻译： 包括基板的VCSEL，在基板上形成的第一导电型的第一半导体层，形成在第一半导体层上的有源层，形成在有源层上的第二导电型的第二半导体层，第一电极 形成在基板的主表面上并与第一半导体层电连接的布线，形成在基板的主表面上并与第二半导体层电连接的第二电极布线，以及形成在基板上用于发射的发光部分 激光灯。 第一电极布线与第一半导体层电连接的接触部分形成在等于或大于pi / 2弧度的范围内，并且以pi弧度为单位，以发光部分为中心。

    Semiconductor laser apparatus and manufacturing method thereof
    6.
    发明申请
    Semiconductor laser apparatus and manufacturing method thereof 有权
    半导体激光装置及其制造方法

    公开(公告)号：US20050238076A1

    公开(公告)日：2005-10-27

    申请号：US10978487

    申请日：2004-11-02

    申请人： Yasuaki Kuwata ,  Hideo Nakayama ,  Akemi Murakami ,  Ryoji Ishii

    发明人： Yasuaki Kuwata ,  Hideo Nakayama ,  Akemi Murakami ,  Ryoji Ishii

    IPC分类号： H01S5/026 ,  H01S5/00 ,  H01S5/068 ,  H01S5/183 ,  H01S5/30

    CPC分类号： H01S5/0261 ,  H01S5/06825 ,  H01S5/18313 ,  H01S5/305 ,  H01S5/3054

    摘要： A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first and second mirror layers, respectively, and at least one Zener diode including a first and second semiconductor regions of a first and second conduction types, respectively, and a third and fourth electrode layers electrically connected with the first and second semiconductor regions, respectively. The second semiconductor region is formed in a portion of the first semiconductor region and forms a PN junction with the first semiconductor region. The VCSEL and the Zener diode are formed on the substrate. The first and second electrode layers are electrically connected with the fourth and third electrode layers, respectively.

    摘要翻译： 半导体激光装置包括基板，垂直腔表面发射半导体激光二极管（VCSEL），分别包括第一和第二导电类型的第一和第二反射镜层，第一和第二反射镜层之间的有源区， 分别与第一和第二镜层电连接的第一和第二电极层和分别包括第一和第二导电类型的第一和第二半导体区域的至少一个齐纳二极管以及与第一和第二电极层电连接的第三和第四电极层 第一和第二半导体区域。 第二半导体区域形成在第一半导体区域的一部分中并与第一半导体区域形成PN结。 在衬底上形成VCSEL和齐纳二极管。 第一和第二电极层分别与第四和第三电极层电连接。

    OPTICAL TRANSMISSION APPARATUS
    7.
    发明申请
    OPTICAL TRANSMISSION APPARATUS 有权
    光传输装置

    公开(公告)号：US20100104239A1

    公开(公告)日：2010-04-29

    申请号：US12390584

    申请日：2009-02-23

    申请人： Junji Okada ,  Ryoji Ishii ,  Tomoaki Kojima ,  Kazuhiro Sakai

    发明人： Junji Okada ,  Ryoji Ishii ,  Tomoaki Kojima ,  Kazuhiro Sakai

    IPC分类号： G02B6/12

    CPC分类号： G02B6/4214 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49171 ,  H01L2924/00014

    摘要： An optical transmission apparatus includes an optical element that has at least one of a light emitting part and a light receiving part on a surface opposed to a mounting surface of the optical element, an optical waveguide that is made of a polymer material, and has an optical path deflecting part in a through hole or an opening, wherein the optical path deflecting part deflects an optical path of the optical with respect to the at least one of the light emitting part and the light receiving part of the optical element, and a substrate that has a mounting region on which the mounting surface of the optical element is mounted, and a plurality of waveguide holding parts, each holding the optical waveguide so that the optical path deflecting part of the optical waveguide is arranged opposite to the at least one of the light emitting part and the light receiving part of the optical element.

    摘要翻译： 光传输装置包括光学元件，该光学元件在与光学元件的安装表面相对的表面上具有发光部和光接收部中的至少一个，由聚合物材料制成的光波导， 在通孔或开口中的光路偏转部分，其中所述光路偏转部分相对于所述光学元件的所述发光部和所述光接收部中的至少一个偏转所述光学的光路，以及基板 其具有安装光学元件的安装表面的安装区域和多个波导保持部件，每个保持部件保持光波导，使得光波导的光路偏转部分布置成与光波导的至少一个相对 光学元件的发光部分和光接收部分。

    Light-emitting module
    9.
    发明授权
    Light-emitting module 有权
    发光模块

    公开(公告)号：US07502566B2

    公开(公告)日：2009-03-10

    申请号：US11319702

    申请日：2005-12-29

    申请人： Yasuaki Kuwata ,  Hideo Nakayama ,  Akemi Murakami ,  Ryoji Ishii ,  Naotaka Mukoyama

    发明人： Yasuaki Kuwata ,  Hideo Nakayama ,  Akemi Murakami ,  Ryoji Ishii ,  Naotaka Mukoyama

    IPC分类号： H04B10/12 ,  H04B10/00

    CPC分类号： H04B10/0799 ,  G02B6/32 ,  G02B6/4206 ,  H04B10/114

    摘要： A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.

    摘要翻译： 一种发光模块，其经由透镜输出从半导体发光元件发射的激光束，所述发光模块包括第一主平面，安装半导体发光元件的第一主平面上的安装部，透镜 保持部分，其保持透镜，使得透镜的光轴对应于与第一主平面成直角交叉的参考线;半导体光接收元件，接收由所发射的激光束中的透镜反射的激光束 从半导体发光元件。 半导体光接收元件位于透镜的光轴上，半导体发光元件远离透镜的光轴设置。