公开(公告)号：US5029236A

公开(公告)日：1991-07-02

申请号：US516187

申请日：1990-04-30

申请人： Hiroshi Yasuda ,  Satoshi Yokoya ,  Nobutaka Takao ,  Akira Todo

发明人： Hiroshi Yasuda ,  Satoshi Yokoya ,  Nobutaka Takao ,  Akira Todo

IPC分类号： H04B1/036

CPC分类号： H04B1/036

摘要： A radiotelephone apparatus employed as a so-called portable telephone or a car telephone includes an outer casing, a chassis base plate provided in the outer casing and mounting an electronic circuit section containing above all a heated element or elements, and a fan containing section containing a heat sink and a fan device connected in a heat conductive relation with the chassis base plate. The electronic circuit section and the fan containing section within the outer casing are isolated from each other by an air current interrupting device for air cooling heated electronic components while preventing dust and dirt in the air from flowing into portions in the casing other than the fan containing section. An air intake window is provided in the vicinity of mechanically operating portion of the apparatus for self cleaning dust and dirt sucked by the air flow through the normal telephone operation.

公开(公告)号：US5020138A

公开(公告)日：1991-05-28

申请号：US500507

申请日：1990-03-28

申请人： Hiroshi Yasuda ,  Satoshi Yokoya ,  Nobutaka Takao

发明人： Hiroshi Yasuda ,  Satoshi Yokoya ,  Nobutaka Takao

IPC分类号： H04B1/036 ,  H04Q7/32

CPC分类号： H04B1/036

摘要： A radio communication apparatus has a modulating portion for modulating a carrier with a signal to be transmitting so as to produce a transmission signal. A signal transmitting portion causes the transmissible signal to be subjected to power amplification. The transmissible signal is transmitted after having been subjected to power amplification. A cooling device is provided for cooling by force a heat source contained in the signal transmitting portion in response to a condition detector for detecting a temperature condition or an operating condition of the signal transmitting portion. An operation control unit is operative to cause the cooling device to be in operation when a particular temperature condition in which temperature of the signal transmitting portion has exceeded a predetermined value or a particular operating condition in which the signal transmitting portion has been in a predetermined state is detected by the condition dectector.

公开(公告)号：US4700377A

公开(公告)日：1987-10-13

申请号：US784472

申请日：1985-10-04

申请人： Hiroshi Yasuda ,  Kanji Ohnishi ,  Satoshi Yokoya ,  Jon Strom

发明人： Hiroshi Yasuda ,  Kanji Ohnishi ,  Satoshi Yokoya ,  Jon Strom

IPC分类号： H04M1/56 ,  G09G1/00 ,  H04M1/30

CPC分类号： H04M1/56

摘要： An electronic apparatus includes a plurality of selectively actuable selection devices for causing the apparatus to perform a plurality of distinct operations. A first actuation of a selection device establishes a first condition to cause the apparatus to generate an externally detectable identification such as by voice synthesis of the selected operation, and a second actuation of the selection device establishes a second condition to cause the apparatus to perform the selected operation and identify the operation on a display. In a preferred embodiment, the selection devices are each a push button actuable from a rest position to a first depressed position to establish the first condition by actuating a first switch, and thereafter actuable from the first depressed position to a second depressed position to establish the second condition by actuating a second switch.

摘要翻译： 电子设备包括多个可选择性致动的选择装置，用于使装置执行多个不同的操作。 选择装置的第一动作建立了第一条件，以使装置产生例如通过语音合成选择的操作的外部可检测的识别，并且选择装置的第二动作建立第二条件以使装置执行 选择操作并识别显示器上的操作。 在优选实施例中，选择装置各自是从静止位置致动的第一按压位置，以通过致动第一开关来建立第一状态，并且此后可从第一按压位置致动到第二按压位置，以建立 通过启动第二开关来执行第二条件。

公开(公告)号：US5524287A

公开(公告)日：1996-06-04

申请号：US242337

申请日：1994-05-13

申请人： Satoshi Yokoya ,  Hiroshi Yasuda ,  Ryuji Oki ,  Nobuhiko Watanabe

发明人： Satoshi Yokoya ,  Hiroshi Yasuda ,  Ryuji Oki ,  Nobuhiko Watanabe

IPC分类号： H04B1/38 ,  H04B7/005 ,  H04B7/26 ,  H01Q11/12 ,  H04B1/04

CPC分类号： H04W52/52

摘要： A radio communication apparatus comprises a transmitting circuit, a receiving circuit, an amplifier, a control circuit and a detecting circuit. The receiving circuit receives a signal from an opposite station such as a base station. The transmitting circuit transmits a signal to the opposite station. The amplifier amplifies the signal to be transmitted from the transmitting circuit. The control circuit controls the level of the transmission signal outputted from the amplifier. The detecting circuit detects the reception state in response to the reception level or the error rate of the signal transmitted from the opposite station. And the control circuit selectively switches, in response to the detection signal obtained from the detecting circuit, the output level of the transmission signal obtained via the amplifier from a high-level mode to a low-level mode when the reception state of the signal transmitted from the opposite station satisfies a preset value.

摘要翻译： 无线通信装置包括发送电路，接收电路，放大器，控制电路和检测电路。 接收电路接收来自诸如基站的对方站的信号。 发送电路向对方发送信号。 放大器放大要从发送电路发送的信号。 控制电路控制从放大器输出的发送信号的电平。 检测电路响应于从相对站发送的信号的接收电平或错误率来检测接收状态。 并且，当发送的信号的接收状态被发送时，控制电路响应于从检测电路获得的检测信号选择性地将经由放大器获得的发送信号的输出电平从高电平模式切换到低电平模式 从相对站满足预设值。

公开(公告)号：US08536002B2

公开(公告)日：2013-09-17

申请号：US13567552

申请日：2012-08-06

申请人： Hiroshi Yasuda ,  Berthold Staufer

发明人： Hiroshi Yasuda ,  Berthold Staufer

IPC分类号： H01L21/8238

CPC分类号： H01L27/0623 ,  H01L21/8249 ,  H01L29/1004 ,  H01L29/66287 ,  H01L29/732 ,  H01L29/7833

摘要： A process of forming an integrated circuit containing a bipolar transistor and an MOS transistor, by forming a base layer of the bipolar transistor using a non-selective epitaxial process so that the base layer has a single crystalline region on a collector active area and a polycrystalline region on adjacent field oxide, and concurrently implanting the MOS gate layer and the polycrystalline region of the base layer, so that the base-collector junction extends into the substrate less than one-third of the depth of the field oxide, and vertically cumulative doping density of the polycrystalline region of the base layer is between 80 percent and 125 percent of a vertically cumulative doping density of the MOS gate. An integrated circuit containing a bipolar transistor and an MOS transistor formed by the described process.

摘要翻译： 通过使用非选择性外延工艺形成双极型晶体管的基极层，使得基极层在集电极有源区域上具有单一结晶区域和多晶硅层，形成包含双极晶体管和MOS晶体管的集成电路的工艺 区域，并且同时注入基极层的MOS栅极层和多晶区域，使得基极 - 集电极结延伸到小于场氧化物深度的三分之一的衬底中，并且垂直累积掺杂 基极层的多晶区域的密度在MOS栅极的垂直累积掺杂密度的80％至125％之间。 包含双极晶体管和通过所描述的工艺形成的MOS晶体管的集成电路。

公开(公告)号：US08450179B2

公开(公告)日：2013-05-28

申请号：US11670729

申请日：2007-02-02

申请人： Badih El-Kareh ,  Hiroshi Yasuda ,  Scott Balster

发明人： Badih El-Kareh ,  Hiroshi Yasuda ,  Scott Balster

IPC分类号： H01L21/331

CPC分类号： H01L29/7378 ,  H01L21/8222 ,  H01L21/8249 ,  H01L27/0825 ,  H01L29/66242

摘要： A method for fabricating a semiconductor device having a first and second bipolar devices of the same dopant type includes: depositing a dielectric layer over a semiconductor layer, depositing a gate conductor layer over the dielectric layer, defining base regions of both bipolar devices, removing the gate conductor layer and dielectric layer in the base regions, depositing a base layer on the gate conductor layer and on the exposed semiconductor layer in the base regions, depositing an insulating layer over the base layer, forming a photoresist layer and defining emitter regions of both bipolar devices, removing the photoresist layer in the emitter regions thereby forming two emitter windows, masking the emitter window of the first bipolar device and exposing the base layer in the base region of the second bipolar device to an additional emitter implant through the associated emitter window.

摘要翻译： 一种用于制造具有相同掺杂剂类型的第一和第二双极器件的半导体器件的方法包括：在半导体层上沉积介电层，在电介质层上沉积栅极导体层，限定两个双极器件的基极区域， 栅极导体层和电介质层，在栅极导体层和基极区域的暴露的半导体层上沉积基底层，在基底层上沉积绝缘层，形成光致抗蚀剂层并限定两者的发射极区域 去除发射极区域中的光致抗蚀剂层，从而形成两个发射器窗口，掩蔽第一双极器件的发射极窗口，并将第二双极器件的基极区域中的基极层通过相关的发射极窗口暴露于另外的发射体注入 。

公开(公告)号：US08222619B2

公开(公告)日：2012-07-17

申请号：US12586717

申请日：2009-09-25

申请人： Akio Yamada ,  Hiroshi Yasuda ,  Mitsuhiro Nakano ,  Takashi Kiuchi

发明人： Akio Yamada ,  Hiroshi Yasuda ,  Mitsuhiro Nakano ,  Takashi Kiuchi

IPC分类号： A61N5/00 ,  G21G5/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/24507 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542

摘要： A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.

摘要翻译： 多列电子束曝光装置包括：多个柱单元; 包括用于测量电子束特性的电子束特性检测单元的晶片台; 以及用于通过使用电子束特性检测单元来测量在所有列单元中使用的电子束的光束特性的控制器，并且用于调节各列电池的电子束，使得在列中使用的电子束的性质 细胞可以大致相同。 电子束特性可以是要发射的电子束的光束位置，光束强度和光束形状中的任何一个。 电子束特性检测单元可以是用于在其上形成有参考标记的校准芯片或法拉第杯。

公开(公告)号：US20110226967A1

公开(公告)日：2011-09-22

申请号：US13068995

申请日：2011-05-25

申请人： Akio Yamada ,  Tomohiro Sakazaki ,  Hiroshi Yasuda

发明人： Akio Yamada ,  Tomohiro Sakazaki ,  Hiroshi Yasuda

IPC分类号： G21K5/00

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.

摘要翻译： 一种电子束光刻设备，包括：存储器，用于根据设备图案所要求的准确度，对分配了等级的绘图图形进行数据存储;绘图模式调整单元，基于该等级生成分割图形的数据;结算等待时间调整 基于等级确定结算等待时间的单元，以及基于划分的绘图图案和结算等待时间的数据来照射电子束时绘制设备图案的控制器。 绘制图案调整单元基于等级来确定分割绘制图案的长边长度的上限或划分的绘制图案的区域的上限，并且基于上限划分绘图图案。

公开(公告)号：US20110057289A1

公开(公告)日：2011-03-10

申请号：US12718142

申请日：2010-03-05

申请人： Rick L. Wise ,  Hiroshi Yasuda

发明人： Rick L. Wise ,  Hiroshi Yasuda

IPC分类号： H01L29/73 ,  H01L21/331

CPC分类号： H01L29/36 ,  H01L21/02063 ,  H01L21/2254 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/73 ,  H01L29/7325

摘要： An integrated circuit containing a bipolar transistor including an emitter diffused region with a peak doping density higher than 1·1020 atoms/cm3, and an emitter-base junction less than 40 nanometers deep in a base layer. A process of forming the bipolar transistor, which includes forming an emitter dopant atom layer between a base layer and an emitter layer, followed by a flash or laser anneal step to diffuse dopant atoms from the emitter dopant atom layer into the base layer.

摘要翻译： 一种包含双极晶体管的集成电路，其包括具有高于1×1020原子/ cm3的峰值掺杂密度的发射极扩散区域，以及在基极层中小于40纳米深的发射极 - 基极结。 一种形成双极晶体管的工艺，其包括在基极层和发射极层之间形成发射极掺杂剂原子层，随后进行闪光或激光退火步骤，以将掺杂剂原子从发射极掺杂剂原子层扩散到基底层中。

公开(公告)号：US07847272B2

公开(公告)日：2010-12-07

申请号：US11235422

申请日：2005-09-26

申请人： Hiroshi Yasuda ,  Akio Yamada

发明人： Hiroshi Yasuda ,  Akio Yamada

IPC分类号： A61N5/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J2237/31769

摘要： An electron beam exposure system is designed to correct a proximity effect. The electron beam exposure system includes: an electron beam generation unit for generating an electron beam; an electron beam exposure mask having opening portions that are arranged so that sizes of the opening portions change at a predetermined rate in order of arrangement; a mask deflection unit for deflecting the electron beam on the electron beam exposure mask; a substrate deflection unit for deflecting and projecting the electron beam onto a substrate; and a control unit for controlling deflection amounts in the mask deflection unit and the substrate deflection unit. The direction or directions of the change may be any one of a row direction and a column direction or may be the row and column directions.

摘要翻译： 电子束曝光系统设计用于校正邻近效应。 电子束曝光系统包括：用于产生电子束的电子束产生单元; 电子束曝光掩模，其具有开口部，其设置成使得开口部的尺寸按照布置的顺序以预定的速率变化; 用于使电子束在电子束曝光掩模上偏转的掩模偏转单元; 用于将电子束偏转和投影到衬底上的衬底偏转单元; 以及用于控制掩模偏转单元和基板偏转单元中的偏转量的控制单元。 改变的方向或方向可以是行方向和列方向中的任何一个，或者可以是行和列方向。