摘要:
A signal waveform measuring apparatus 1A is configured from: a signal optical system 11, a reference optical system 16, a time difference setting unit 12 setting a time difference between signal light L1 and reference light L2, a wavelength conversion element 20 including an aggregate of crystals of a dye molecule and generating converted light L5, which has been wavelength-converted to a shorter wavelength than incident light made incident on the crystal aggregate, at an intensity proportional to an r-th power (r>1) of the intensity of the incident light, a photodetector 30 detecting the converted light L5, generated at the element 20 at the intensity that is in accordance with the intensity of the signal light L1, the intensity of the reference light L2, and the time difference between the two, and a signal waveform analyzer 40 performing analysis of the detection result of the converted light L5 and thereby acquiring a time waveform of the signal light L1. A signal waveform measuring apparatus and a measuring method that enable a time waveform of signal light to be measured with good precision by a simple configuration are thereby realized.
摘要:
A signal waveform measuring apparatus 1A is configured from: a signal optical system 11, a reference optical system 16, a time difference setting unit 12 setting a time difference between signal light L1 and reference light L2, a wavelength conversion element 20 including an aggregate of crystals of a dye molecule and generating converted light L5, which has been wavelength-converted to a shorter wavelength than incident light made incident on the crystal aggregate, at an intensity proportional to an r-th power (r>1) of the intensity of the incident light, a photodetector 30 detecting the converted light L5, generated at the element 20 at the intensity that is in accordance with the intensity of the signal light L1, the intensity of the reference light L2, and the time difference between the two, and a signal waveform analyzer 40 performing analysis of the detection result of the converted light L5 and thereby acquiring a time waveform of the signal light L1. A signal waveform measuring apparatus and a measuring method that enable a time waveform of signal light to be measured with good precision by a simple configuration are thereby realized.
摘要:
A wavelength-converted light generating apparatus 1A includes: an excitation light source 10 supplying excitation light L0 of a predetermined wavelength; and a wavelength conversion element 20, in which an aggregate 22 of crystals of a dye molecule is held by a holding substrate 21 and which, by incidence of the excitation light L0, generates converted light L1 that has been wavelength-converted. The excitation light source 10 supplies the excitation light L0 of a wavelength longer than an absorption edge of the dye molecule to the wavelength conversion element 20. The wavelength conversion element 20, by incidence of the excitation light L0 on the crystal aggregate 22, generates and outputs the converted light (for example, visible light) L1 that has been wavelength-converted to a shorter wavelength than the excitation light (for example, near-infrared light) L0. A wavelength-converted light generating apparatus and generating method capable of favorably generating light of a shorter wavelength than incident light of a predetermined wavelength by wavelength conversion is thus realized.
摘要:
A wavelength-converted light generating apparatus 1A includes: an excitation light source 10 supplying excitation light L0 of a predetermined wavelength; and a wavelength conversion element 20, in which an aggregate 22 of crystals of a dye molecule is held by a holding substrate 21 and which, by incidence of the excitation light L0, generates converted light L1 that has been wavelength-converted. The excitation light source 10 supplies the excitation light L0 of a wavelength longer than an absorption edge of the dye molecule to the wavelength conversion element 20. The wavelength conversion element 20, by incidence of the excitation light L0 on the crystal aggregate 22, generates and outputs the converted light (for example, visible light) L1 that has been wavelength-converted to a shorter wavelength than the excitation light (for example, near-infrared light) L0. A wavelength-converted light generating apparatus and generating method capable of favorably generating light of a shorter wavelength than incident light of a predetermined wavelength by wavelength conversion is thus realized.
摘要:
Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate. In the compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate, propagation light of a smaller energy than a desired ideal excitation energy for the compound semiconductor is irradiated onto the substrate 13 while depositing the compound semiconductor on the substrate 13, near-field light is generated based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate 13, new vibrational levels for the compound semiconductor are formed in multiple stages based on the generated near-field light, and a component in the compound semiconductor corresponding to the excitation energy is excited with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than the energy of the propagation light is excited to desorb the component.
摘要:
A method of fabricating a light receiving element includes depositing a material for one of a P-type semiconductor, an N--type semiconductor, and electrodes, while applying a reverse bias voltage and irradiating light of a desired wavelength longer than an absorption wavelength of the material. The deposition has a non-adiabatic flow of, at a portion where a local shape to enable generation of near field light is formed on a surface of the deposited material with the irradiation light, absorbing the irradiation light through a non-adiabatic process with the near field light, thereby generating electrons, and canceling generation of a local electric field based on the voltage, and a particle adsorbing flow of, at a portion where the shape is not formed, causing the portion where the local electric field is generated to sequentially adsorb particles forming the material, and shifting to the non-adiabatic flow when the shape is formed.
摘要:
Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate. In the compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate, propagation light of a smaller energy than a desired ideal excitation energy for the compound semiconductor is irradiated onto the substrate 13 while depositing the compound semiconductor on the substrate 13, near-field light is generated based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate 13, new vibrational levels for the compound semiconductor are formed in multiple stages based on the generated near-field light, and a component in the compound semiconductor corresponding to the excitation energy is excited with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than the energy of the propagation light is excited to desorb the component.
摘要:
An optical-pickup slider is characterized in that a light-transmitting-property substrate is bonded to a surface of a layer having a tapered through hole, on which surface a larger opening of the tapered through hole exists. Thereby, it is possible to prevent the layer having an aperture from being destroyed. A method of manufacturing the optical-pickup slider comprises the steps of a) making a tapered through hole in a layer layered on a first substrate and having a thickness smaller than that of the first substrate; and, after bonding a light-transmitting-property substrate to a surface of the layer, removing the first substrate so as to expose an aperture at a tip of the tapered through hole.
摘要:
A probe opening forming apparatus 139 comprising: light detecting means 140 for detecting a quantity of a light transmitted from a tip portion of the probe through a light of the source 116, which is on contact with the tip portion of the probe; storage means 142 for previously storing information about relation of the quantity of the light transmitted from the tip portion of the probe and the size of the opening; calculating means 144 for obtaining the value of the light quantity for obtaining an opening having a desirable size based on the information stored in the storage means 142; and pressing control means 126 for controlling the press of the tip portion of the probe against the light detecting means through the pressing means 114 such that a light quantity detected by the light detecting means 140 is equal to the light quantity calculated from the calculating means 144.
摘要:
Measurement of an internal structure of a sample is performed using interference of light within a short time. Through a first optical frequency comb generator 5 using a first signal having a frequency f1 and generating reference light having a sideband every interval of the frequency f1 and a second optical frequency comb generator 6 using a second signal having a frequency f2 and generating object light having a sideband every interval of the frequency f2, and sweeping of emission timing between the reference light and the object light, by changing a phase difference or frequency difference between the first signal and second signal, and detecting a change in light intensity of the interference light due to the interference, operation of detecting the interference position is made at a high speed.