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    Method of forming a solute-enriched layer in a substrate surface and article formed thereby
    1.
    发明授权
    Method of forming a solute-enriched layer in a substrate surface and article formed thereby 有权
    在基材表面形成富含溶质层的方法和由此形成的制品

    公开(公告)号：US06413866B1

    公开(公告)日：2002-07-02

    申请号：US09525367

    申请日：2000-03-15

    申请人： Horatio S. Wildman ,  Lawrence A. Clevenger ,  Chenting Lin ,  Kenneth P. Rodbell ,  Stefan Weber ,  Roy C. Iggulden ,  Maria Ronay ,  Florian Schnabel

    发明人： Horatio S. Wildman ,  Lawrence A. Clevenger ,  Chenting Lin ,  Kenneth P. Rodbell ,  Stefan Weber ,  Roy C. Iggulden ,  Maria Ronay ,  Florian Schnabel

    IPC分类号： H01L2144

    CPC分类号： H01L21/7685 ,  H01L21/321 ,  H01L21/76867 ,  H01L21/76888 ,  H01L23/53219 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of enriching the surface of a substrate with a solute material that was originally dissolved in the substrate material, to yield a uniform dispersion of the solute material at the substrate surface. The method generally entails the use of a solvent material that is more reactive than the solute material to a chosen reactive agent. The surface of the substrate is reacted with the reactive agent to preferentially form a reaction compound of the solvent material at the surface of the substrate. As the compound layer develops, the solute material segregates or diffuses out of the compound layer and into the underlying substrate, such that the region of the substrate nearest the compound layer becomes enriched with the solute material. At least a portion of the compound layer is then removed without removing the underlying enriched region of the substrate. For microcircuit applications, the method can be used to enrich the surface of an aluminum line with elemental copper to improve the electromigration resistance of the line.

    摘要翻译： 一种使用最初溶解在基片材料中的溶质材料来富集基片的表面的方法，以使溶质材料在基片表面上均匀分散。 该方法通常需要使用比溶质材料对选择的反应剂更具反应性的溶剂材料。 使基板的表面与反应剂反应，以优先在基材的表面形成溶剂材料的反应化合物。 当化合物层发展时，溶质材料从化合物层中分离或扩散到下面的衬底中，使得最接近化合物层的衬底的区域变得富集溶质材料。 然后除去化合物层的至少一部分而不去除底物的下面的富集区域。 对于微电路应用，该方法可用于通过元素铜来丰富铝线的表面，以提高线路的电迁移能力。

    Process for manufacturing a contact barrier
    3.
    发明授权
    Process for manufacturing a contact barrier 失效
    制造接触屏障的方法

    公开(公告)号：US06509265B1

    公开(公告)日：2003-01-21

    申请号：US09666240

    申请日：2000-09-21

    申请人： Patrick W. DeHaven ,  Anthony G. Domenicucci ,  Lynne M. Gignac ,  Glen L. Miles ,  Prabhat Tiwari ,  Yun-Yu Wang ,  Horatio S. Wildman ,  Kwong Hon Wong

    发明人： Patrick W. DeHaven ,  Anthony G. Domenicucci ,  Lynne M. Gignac ,  Glen L. Miles ,  Prabhat Tiwari ,  Yun-Yu Wang ,  Horatio S. Wildman ,  Kwong Hon Wong

    IPC分类号： H01L214763

    CPC分类号： H01L21/76846 ,  H01L21/28518 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864

    摘要： A process for forming a conductive contact having a flat interface. A layer containing niobium and titanium is deposited on a silicon substrate and the resulting structure is annealed in a nitrogen-containing atmosphere at about 500° C. to about 700° C. By this process, a flatter interface between silicide and silicon, which is less likely to cause junction leakage, is formed on annealing. The step of annealing also produces a more uniform bilayer, which is a better barrier against tungsten encroachment during subsequent tungsten deposition. Larger silicide grains are also formed so that fewer grain boundaries are produced, reducing metal diffusion in grain boundaries. The process can be used to form contacts for very small devices and shallow junctions, such as are required for current and future semiconductor devices.

    摘要翻译： 一种用于形成具有平坦界面的导电触头的工艺。 将含有铌和钛的层沉积在硅衬底上，所得结构在约500℃至约700℃的含氮气氛中退火。通过该过程，硅化物和硅之间的平坦界面是 在退火时形成不太可能导致结漏电。 退火步骤还产生更均匀的双层，这是在随后的钨沉积期间防止钨侵蚀的更好的屏障。 还形成更大的硅化物晶粒，使得产生更少的晶界，减少晶界中的金属扩散。 该过程可用于形成非常小的器件和浅结的接触，例如当前和未来的半导体器件所需要的。

    Process for manufacturing a contact barrier
    6.
    发明授权
    Process for manufacturing a contact barrier 失效
    制造接触屏障的方法

    公开(公告)号：US06180521B2

    公开(公告)日：2001-01-30

    申请号：US09225598

    申请日：1999-01-06

    申请人： Patrick W. DeHaven ,  Anthony G. Domenicucci ,  Lynne M. Gignac ,  Glen L. Miles ,  Prabhat Tiwari ,  Yun-Yu Wang ,  Horatio S. Wildman ,  Kwong Hon Wong

    发明人： Patrick W. DeHaven ,  Anthony G. Domenicucci ,  Lynne M. Gignac ,  Glen L. Miles ,  Prabhat Tiwari ,  Yun-Yu Wang ,  Horatio S. Wildman ,  Kwong Hon Wong

    IPC分类号： H01L2128

    CPC分类号： H01L21/76846 ,  H01L21/28518 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864

    摘要： A process for forming a conductive contact having a flat interface. A layer containing niobium and titanium is deposited on a silicon substrate and the resulting structure is annealed in a nitrogen-containing atmosphere at about 500° C. to about 700° C. By this process, a flatter interface between silicide and silicon, which is less likely to cause junction leakage, is formed on annealing. The step of annealing also produces a more uniform bilayer, which is a better barrier against tungsten encroachment during subsequent tungsten deposition. Larger silicide grains are also formed so that fewer grain boundaries are produced, reducing metal diffusion in grain boundaries. The process can be used to form contacts for very small devices and shallow junctions, such as are required for current and future semiconductor devices.

    摘要翻译： 一种用于形成具有平坦界面的导电触头的工艺。 将含有铌和钛的层沉积在硅衬底上，所得结构在约500℃至约700℃的含氮气氛中退火。通过该过程，硅化物和硅之间的平坦界面是 在退火时形成不太可能导致结漏电。 退火步骤还产生更均匀的双层，这是在随后的钨沉积期间防止钨侵蚀的更好的屏障。 还形成更大的硅化物晶粒，使得产生更少的晶界，减少晶界中的金属扩散。 该过程可用于形成非常小的器件和浅结的接触，例如当前和未来的半导体器件所需要的。