公开(公告)号：US06344234B1

公开(公告)日：2002-02-05

申请号：US08476475

申请日：1995-06-07

申请人： Hormazdyar Minocher Dalal ,  Alexis Bitaillou ,  Kenneth Michael Fallon ,  Gene Joseph Gaudenzi ,  Kenneth Robert Herman ,  Frederic Pierre ,  Georges Robert

发明人： Hormazdyar Minocher Dalal ,  Alexis Bitaillou ,  Kenneth Michael Fallon ,  Gene Joseph Gaudenzi ,  Kenneth Robert Herman ,  Frederic Pierre ,  Georges Robert

IPC分类号： B05D512

CPC分类号： H01L24/12 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/11472 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/10992 ,  H05K2203/0435 ,  Y02P70/613 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/013

摘要： A method and structure for a solder interconnection, using solder balls for making a low temperature chip attachment directly to any of the higher levels of packaging substrate is disclosed. After a solder ball has been formed using standard methods it is reflowed to give the solder ball a smooth surface. A layer of low melting point metal, such as, bismuth, indium or tin, preferably, pure tin, is deposited on the top of the solder balls. This structure results in localizing of the eutectic alloy, formed upon subsequent low temperature joining cycle, to the top of the high melting solder ball even after multiple low temperature reflow cycles. This method does not need tinning of the substrate to which the chip is to be joined, which makes this method economical. It has also been noticed that whenever temperature is raised slightly above the eutectic temperature, the structure always forms a liquid fillet around the joint with copper wires. This liquid fillet formation results in substantial thermal fatigue life improvement for reduced stress at interface; and secondly, provides an easy means to remove chip for the purpose of chip burn-in, replacement or field repairs.

摘要翻译： 公开了一种用于焊接互连的方法和结构，其使用用于将低温芯片附接到任何更高级别的封装衬底的焊球。 在使用标准方法形成焊球后，回流焊锡球表面光滑。 一层低熔点金属，例如铋，铟或锡，优选纯锡，沉积在焊料球的顶部。 这种结构导致即使在多个低温回流循环之后，在随后的低温接合循环中形成的共晶合金也定位到高熔点焊球的顶部。 该方法不需要对芯片要连接的基板进行镀锡，这使得该方法成本低廉。 还注意到，当温度升高到略高于共熔温度的情况下，结构总是用铜线在接头周围形成液体圆角。 这种液体圆角形成导致显着的热疲劳寿命改善以减少界面处的应力; 其次，为了芯片烧录，更换或现场维修的目的，提供了一种便于拆卸芯片的方法。

公开(公告)号：US06259159B1

公开(公告)日：2001-07-10

申请号：US08794982

申请日：1997-01-30

申请人： Hormazdyar Minocher Dalal ,  Alexis Bitaillou ,  Kenneth Michael Fallon ,  Gene Jospeh Gaudenzi ,  Kenneth Robert Herman ,  Frederic Pierre ,  Georges Robert

发明人： Hormazdyar Minocher Dalal ,  Alexis Bitaillou ,  Kenneth Michael Fallon ,  Gene Jospeh Gaudenzi ,  Kenneth Robert Herman ,  Frederic Pierre ,  Georges Robert

IPC分类号： H01L2348

CPC分类号： H01L24/12 ,  H01L21/0331 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11902 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K3/143 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/10992 ,  H05K2203/043 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2924/013

摘要： A method and structure for a solder interconnection, using solder balls for making a low temperature chip attachment directly to any of the higher levels of packaging substrate is disclosed. After a solder ball has been formed using standard methods it is reflowed to give the solder ball a smooth surface. A layer of low melting point metal, such as, bismuth, indium or tin, preferably, pure tin, is deposited on the top of the solder balls. This structure results in localizing of the eutectic alloy, formed upon subsequent low temperature joining cycle, to the top of the high melting solder ball even after multiple low temperature reflow cycles. This method does not need tinning of the substrate to which the chip is to be joined, which makes this method economical. It has also been noticed that whenever temperature is raised slightly above the eutectic temperature, the structure always forms a liquid fillet around the joint with copper wires. This liquid fillet formation results in substantial thermal fatigue life improvement for reduced stress at interface; and secondly, provides an easy means to remove chip for the purpose of chip burn-in, replacement or field repairs.

摘要翻译： 公开了一种用于焊接互连的方法和结构，其使用用于将低温芯片附接到任何更高级别的封装衬底的焊球。 在使用标准方法形成焊球后，回流焊锡球表面光滑。 一层低熔点金属，例如铋，铟或锡，优选纯锡，沉积在焊料球的顶部。 这种结构导致即使在多个低温回流循环之后，在随后的低温接合循环中形成的共晶合金也定位到高熔点焊球的顶部。 该方法不需要对芯片要连接的基板进行镀锡，这使得该方法成本低廉。 还注意到，当温度升高到略高于共熔温度的情况下，结构总是用铜线在接头周围形成液体圆角。 这种液体圆角形成导致显着的热疲劳寿命改善以减少界面处的应力; 其次，为了芯片烧录，更换或现场维修的目的，提供了一种便于拆卸芯片的方法。

公开(公告)号：US5137845A

公开(公告)日：1992-08-11

申请号：US729506

申请日：1991-07-12

申请人： Henri Lochon ,  Georges Robert

发明人： Henri Lochon ,  Georges Robert

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/532

CPC分类号： H01L24/11 ,  H01L23/53209 ,  H01L24/13 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11902 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  Y10S148/143

摘要： A method of forming metal contact terminals (35) of a determined size having an insulating substrate (17) with a metal land (18) formed thereon and a passivating layer (19) provided with an opening exposing a part of the metal land by forming intermediate metal contact pad (33') in the contact opening, applying and patterning a photoresist, delineating the intermediate metal contact pad (33') using pattern (31) as an in-situ mask, depositing a lead-tin solder layer (34') over a metal mask to form a solder bump (34') on the final metal contact pad, and reflowing the solder to form a solder ball (34). Thereby achieving the metal contact terminal (35) at the contact pad site. The above method has applicability to the fabrication of contact terminals for high density/high count I/O connections for advanced semiconductor chips that are appropriate for flip-chip (C4) or face-down bonding thereof on metallized ceramic (MC) substrates.