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    Devices having high dielectric constant, ionically-polarizable materials
    2.
    发明授权
    Devices having high dielectric constant, ionically-polarizable materials 有权
    具有高介电常数，离子极化材料的器件

    公开(公告)号：US08309955B2

    公开(公告)日：2012-11-13

    申请号：US12743764

    申请日：2009-01-07

    申请人： Howard Edan Katz ,  Bhola Nath Pal ,  Kevin Cua See

    发明人： Howard Edan Katz ,  Bhola Nath Pal ,  Kevin Cua See

    IPC分类号： H01L29/08

    CPC分类号： H01L29/408 ,  H01G9/00 ,  H01G9/022 ,  H01G9/045 ,  H01L29/401 ,  H01L51/0053 ,  H01L51/0533 ,  H01L51/0558 ,  H01L51/102

    摘要： An electronic or electro-optic device has a first electrode, a second electrode spaced apart from the first electrode, and a dielectric layer disposed between the first and second electrodes. The dielectric layer has electrically insulating planar layers with intercalated ions therebetween such that the electrically insulating planar layers provide a barrier to impede movement of the intercalated ions to the first and second electrodes under an applied voltage while permitting a polarization of the dielectric layer while in operation.

    摘要翻译： 电子或电光器件具有第一电极，与第一电极间隔开的第二电极和设置在第一和第二电极之间的电介质层。 电介质层具有电绝缘平面层，其间具有插入离子，使得电绝缘平面层在施加电压下提供阻挡插入离子到第一和第二电极的阻挡，同时在操作期间允许电介质层的极化 。

    Process for fabricating organic semiconductor device involving selective patterning
    4.
    发明授权
    Process for fabricating organic semiconductor device involving selective patterning 有权
    用于制造涉及选择性图案化的有机半导体器件的工艺

    公开(公告)号：US06403397B1

    公开(公告)日：2002-06-11

    申请号：US09605507

    申请日：2000-06-28

    申请人： Howard Edan Katz

    发明人： Howard Edan Katz

    IPC分类号： H01L5140

    CPC分类号： H01L51/0004 ,  H01L51/0014 ,  H01L51/0545

    摘要： An improved process for forming devices utilizing patterned organic semiconductor films is provided. The process involves treating a surface to selectively provide regions of greater affinity and lesser affinity for an organic semiconductor or an organic semiconductor solution. When the organic semiconductor, or solution comprising the semiconductor, is deposited on the treated surface, either the organic semiconductor or the organic semiconductor solution dewets from the lesser affinity regions or the resultant film adheres only weakly to the lesser affinity regions such that selective removal is readily performed. And even where such removal is not performed, the portions of the organic semiconductor film overlying the greater affinity regions exhibit higher mobility and better film continuity relative to the other portions of the film.

    摘要翻译： 提供了利用图案化有机半导体膜形成器件的改进方法。 该方法包括处理表面以选择性地提供对有机半导体或有机半导体溶液具有更高亲和力和较小亲和力的区域。 当有机半导体或包含半导体的溶液沉积在经处理的表面上时，有机半导体或有机半导体溶液从较小亲合性区域或所得膜露出仅对较小亲合性区域弱，使得选择性除去 很容易执行。 并且即使在不进行这种去除的情况下，覆盖较大亲合性区域的有机半导体膜的部分相对于膜的其它部分表现出更高的迁移率和更好的膜连续性。

    Material exhibiting compensation for polymerization-induced shrinkage and recording medium formed therefrom
    5.
    发明授权
    Material exhibiting compensation for polymerization-induced shrinkage and recording medium formed therefrom 失效
    表现出对聚合引起的收缩和由其形成的记录介质的补偿的材料

    公开(公告)号：US6124076A

    公开(公告)日：2000-09-26

    申请号：US108496

    申请日：1998-07-01

    申请人： Lisa Dhar ,  Howard Edan Katz

    发明人： Lisa Dhar ,  Howard Edan Katz

    IPC分类号： C08J5/00 ,  C08F2/46 ,  C08G59/42 ,  C08L101/00 ,  C08L101/16 ,  G03F7/00 ,  G03F7/027 ,  G03H1/02 ,  G03H1/04 ,  G03C1/73

    CPC分类号： G03H1/0256 ,  G03F7/001 ,  G03H1/02 ,  G03H2001/0264 ,  G03H2001/186 ,  G03H2250/44

    摘要： The invention relates to use of a material containing a polymerizable monomer or oligomer, the material exhibiting desirable shrinkage compensation upon polymerization. The material contains an expansion agent having a cleaving moiety with the capacity to be cleaved or fragmented by a catalytic reaction, e.g., acid catalysis. The cleavage, by increasing the number of molecules in the material, causes expansion that compensates, at least in part, for shrinkage induced by polymerization of the monomer or oligomer. The expansion agent is capable of providing compensation such that no more than 0.4%, advantageously no more than 0.2%, volume shrinkage per molar concentration of polymerized monomer functional groups occurs, where such compensation is performed at relatively low temperatures of less than 40.degree. C.

    摘要翻译： 本发明涉及含有可聚合单体或低聚物的材料的用途，该材料在聚合时表现出理想的收缩补偿。 该材料含有具有裂解部分的膨胀剂，其具有通过催化反应例如酸催化裂解或破碎的能力。 通过增加材料中的分子数量来进行切割，导致膨胀，至少部分地补偿由单体或低聚物的聚合引起的收缩。 膨胀剂能够提供补偿，使得发生每摩尔浓度的聚合单体官能团的体积收缩率不超过0.4％，有利地不超过0.2％，其中在相对低于40℃的较低温度下进行这种补偿 。

    Method for enhancing the pullout strength of polymer-coated optical fiber
    7.
    发明授权
    Method for enhancing the pullout strength of polymer-coated optical fiber 失效
    提高聚合物涂层光纤拉拔强度的方法

    公开(公告)号：US5345528A

    公开(公告)日：1994-09-06

    申请号：US098972

    申请日：1993-07-28

    申请人： Howard Edan Katz ,  Valerie J. Kuck ,  Marcia L. Schilling

    发明人： Howard Edan Katz ,  Valerie J. Kuck ,  Marcia L. Schilling

    IPC分类号： G02B6/44 ,  C03B37/12 ,  C03C25/12 ,  G02B6/036 ,  G02B6/10

    CPC分类号： G02B6/03694 ,  C03C25/12 ,  G02B6/02395 ,  G02B6/03638

    摘要： Applicants have discovered that by heating cured polymer-coated fiber at temperatures of 100.degree. C. or more, they can enhance the fiber pullout strength by 25% or more. This postcure heating can advantageously be done off-line by placing loosely wound fiber in a heated oven. Alternatively the postcure heating can be done on-line by reel-to-reel passage of the fiber through a heated furnace. Preferred temperatures are in the range 100.degree. C.-300.degree. C.

    摘要翻译： 申请人已经发现，通过在100℃或更高的温度下加热固化的聚合物涂覆的纤维，它们可以将纤维拔出强度提高25％或更多。 这种后固化加热可以有利地通过将松散缠绕的纤维放置在加热的烘箱中离线进行。 或者，可以通过纤维通过加热炉的卷到盘通过在线进行后固化加热。 优选的温度在100℃-300℃

    LADDER-TYPE OLIGO-P-PHENYLENE-CONTAINING COPOLYMERS WITH HIGH OPEN-CIRCUIT VOLTAGES AND AMBIENT PHOTOVOLTAIC ACTIVITY
    8.
    发明申请
    LADDER-TYPE OLIGO-P-PHENYLENE-CONTAINING COPOLYMERS WITH HIGH OPEN-CIRCUIT VOLTAGES AND AMBIENT PHOTOVOLTAIC ACTIVITY 审中-公开
    具有高开路电压和环境光伏活性的梯度型含OLYO-对苯乙烯共聚物

    公开(公告)号：US20120232238A1

    公开(公告)日：2012-09-13

    申请号：US13388855

    申请日：2010-08-03

    申请人： Howard Edan Katz ,  Qingdong Zheng ,  Byung Jun Jung

    发明人： Howard Edan Katz ,  Qingdong Zheng ,  Byung Jun Jung

    IPC分类号： C08G75/06 ,  B82Y30/00

    CPC分类号： H01L51/0036 ,  C08G61/126 ,  C08G2261/1336 ,  C08G2261/164 ,  C08G2261/3142 ,  C08G2261/3223 ,  C08G2261/91 ,  H01L51/0043 ,  H01L51/0044 ,  H01L51/0056 ,  H01L51/0068 ,  Y02E10/549

    摘要： Ladder-type oligo-p-phenylene containing donor-acceptor copolymers are disclosed. The ladder-type oligo-p-phenylene can be used as an electron donor unit in the disclosed copolymers to provide a deeper highest occupied molecular orbital (HOMO) level for obtaining polymeric solar cells having a higher open-circuit voltage. Particular electron-accepting units, e.g., a divalent fused-ring heterocyclic moiety selected from the group consisting of a substituted or unsubstituted benzothiadiazole, a substituted or unsubstituted quinoxaline, a substituted or unsubstituted benzobisthiazole, and a substituted or unsubstituted naphthothiadiazole, can be used to tune the electronic band gaps of the polymers for a better light harvesting ability. The disclosed copolymers exhibit field-effect mobilities as high as 0.011 cm2/(V s). Compared to fluorene-containing copolymers with the same acceptor unit, the disclosed ladder-type oligo-p-phenylene containing copolymers have enhanced and bathochromically shifted absorption bands and much better solubility in organic solvents.

    摘要翻译： 公开了含梯度型低聚对苯二烯的供体 - 受体共聚物。 在所公开的共聚物中，梯型低聚对亚苯基可用作电子给体单元，以提供更高的最高占据分子轨道（HOMO）水平，以获得具有较高开路电压的聚合物太阳能电池。 可以使用特定的电子接受单元，例如选自取代或未取代的苯并噻二唑，取代或未取代的喹喔啉，取代或未取代的苯并二噻唑和取代或未取代的萘并噻二唑的二价稠环杂环部分， 调整聚合物的电子带隙以获得更好的光捕获能力。 所公开的共聚物表现出高达0.011cm2 /（Vs）的场效应迁移率。 与具有相同受体单元的含芴共聚物相比，所公开的梯型低聚对亚苯基共聚物具有增强的和红移的吸收带和在有机溶剂中更好的溶解度。

    Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
    9.
    发明授权
    Semiconductor devices having regions of induced high and low conductivity, and methods of making the same 有权
    具有诱导高导电性和低导电性的区域的半导体器件及其制造方法

    公开(公告)号：US07704784B2

    公开(公告)日：2010-04-27

    申请号：US11354365

    申请日：2006-02-15

    申请人： Zhenan Bao ,  Howard Edan Katz ,  Jeffrey Scott Meth

    发明人： Zhenan Bao ,  Howard Edan Katz ,  Jeffrey Scott Meth

    IPC分类号： H01L51/40

    CPC分类号： H01L27/283 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0516

    摘要： Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

    摘要翻译： 半导体装置，包括：具有基板表面的基板; 覆盖衬底表面的第一区域的第一材料层; 覆盖所述第一材料层并覆盖所述衬底表面的第二区域的半导体层; 覆盖第一材料层并具有第一导电性的半导体层的第一区域; 半导体层的第二区域，覆盖在衬底表面的第二区域上并具有第二导电性; 并且第一导电性与第二导电性基本不同。 这种半导体装置还包括覆盖衬底表面的第二区域的第二材料层，覆盖第二材料层的半导体层的第二区域。