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224 条记录 (耗时 0.039 秒)

    Protective seal ring for preventing die-saw induced stress
    7.
    发明授权
    Protective seal ring for preventing die-saw induced stress 有权
    用于防止模锯引起的应力的保护密封环

    公开(公告)号：US08334582B2

    公开(公告)日：2012-12-18

    申请号：US12347026

    申请日：2008-12-31

    申请人： Shin-Puu Jeng ,  Hsien-Wei Chen ,  Shang-Yun Hou ,  Hao-Yi Tsai ,  Anbiarshy N. F. Wu ,  Yu-Wen Liu

    发明人： Shin-Puu Jeng ,  Hsien-Wei Chen ,  Shang-Yun Hou ,  Hao-Yi Tsai ,  Anbiarshy N. F. Wu ,  Yu-Wen Liu

    IPC分类号： H01L23/544

    CPC分类号： H01L21/78 ,  H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor chip includes a semiconductor substrate; a plurality of low-k dielectric layers over the semiconductor substrate; a first passivation layer over the plurality of low-k dielectric layers; and a second passivation layer over the first passivation layer. A first seal ring is adjacent to an edge of the semiconductor chip, wherein the first seal ring has an upper surface substantially level to a bottom surface of the first passivation layer. A second seal ring is adjacent to the first seal ring and on an inner side of the semiconductor chip than the first seal ring. The second seal ring includes a pad ring in the first passivation layer and the second passivation layer. A trench ring includes at least a portion directly over the first seal ring. The trench ring extends from a top surface of the second passivation layer down to at least an interface between the first passivation layer and the second passivation layer.

    摘要翻译： 半导体芯片包括半导体衬底; 半导体衬底上的多个低k电介质层; 在所述多个低k电介质层上的第一钝化层; 以及在所述第一钝化层上的第二钝化层。 第一密封环邻近半导体芯片的边缘，其中第一密封环具有基本上平坦于第一钝化层的底表面的上表面。 第二密封环与第一密封环相邻，并且在半导体芯片的内侧与第一密封环相邻。 第二密封环包括在第一钝化层和第二钝化层中的焊盘环。 沟槽环包括直接在第一密封环上的至少一部分。 沟槽环从第二钝化层的顶表面延伸到至少第一钝化层和第二钝化层之间的界面。

    Scribe line metal structure
    8.
    发明授权
    Scribe line metal structure 有权
    划线金属结构

    公开(公告)号：US08368180B2

    公开(公告)日：2013-02-05

    申请号：US12619464

    申请日：2009-11-16

    申请人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Hao-Yi Tsai ,  Shang-Yun Hou ,  Hsien-Wei Chen ,  Ming-Yen Chiu

    发明人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Hao-Yi Tsai ,  Shang-Yun Hou ,  Hsien-Wei Chen ,  Ming-Yen Chiu

    IPC分类号： H01L23/544

    CPC分类号： H01L21/78

    摘要： A system and method for preventing defaults during singulation is presented. An embodiment comprises a dummy metal structure located in the scribe region. The dummy metal structure comprises a series of alternating dummy lines that are connected through dummy vias. The dummy lines are offset from dummy lines in adjacent metal layers. Additionally, the dummy lines and dummy vias in the upper layers of the scribe line may be formed with larger dimensions than the dummy lines and dummy vias located in the lower layers.

    摘要翻译： 提出了一种在分割过程中防止违约的系统和方法。 一个实施例包括位于划线区域中的虚拟金属结构。 虚拟金属结构包括通过虚拟通孔连接的一系列交替虚拟线。 伪线与相邻金属层中的虚拟线偏移。 此外，划线的上层中的虚拟线和虚拟通路可以形成为具有比位于下层中的虚拟线和虚拟通孔更大的尺寸。

    Scribe Line Metal Structure
    9.
    发明申请
    Scribe Line Metal Structure 有权
    划线金属结构

    公开(公告)号：US20100207251A1

    公开(公告)日：2010-08-19

    申请号：US12619464

    申请日：2009-11-16

    申请人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Hao-Yi Tsai ,  Shang-Yun Hou ,  Hsien-Wei Chen ,  Ming-Yen Chiu

    发明人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Hao-Yi Tsai ,  Shang-Yun Hou ,  Hsien-Wei Chen ,  Ming-Yen Chiu

    IPC分类号： H01L23/544 ,  H01L21/00

    CPC分类号： H01L21/78

    摘要： A system and method for preventing defaults during singulation is presented. An embodiment comprises a dummy metal structure located in the scribe region. The dummy metal structure comprises a series of alternating dummy lines that are connected through dummy vias. The dummy lines are offset from dummy lines in adjacent metal layers. Additionally, the dummy lines and dummy vias in the upper layers of the scribe line may be formed with larger dimensions than the dummy lines and dummy vias located in the lower layers.

    摘要翻译： 提出了一种在分割过程中防止违约的系统和方法。 一个实施例包括位于划线区域中的虚拟金属结构。 虚拟金属结构包括通过虚拟通孔连接的一系列交替虚拟线。 伪线与相邻金属层中的虚拟线偏移。 此外，划线的上层中的虚线和虚拟通路可以形成为具有比位于下层中的虚拟线和虚拟通孔更大的尺寸。

    Protective Seal Ring for Preventing Die-Saw Induced Stress
    10.
    发明申请
    Protective Seal Ring for Preventing Die-Saw Induced Stress 有权
    用于防止模切诱发应力的保护密封圈

    公开(公告)号：US20090321890A1

    公开(公告)日：2009-12-31

    申请号：US12347026

    申请日：2008-12-31

    申请人： Shin-Puu Jeng ,  Hsien-Wei Chen ,  Shang-Yun Hou ,  Hao-Yi Tsai ,  Anbiarshy N.F. Wu ,  Yu-Wen Liu

    发明人： Shin-Puu Jeng ,  Hsien-Wei Chen ,  Shang-Yun Hou ,  Hao-Yi Tsai ,  Anbiarshy N.F. Wu ,  Yu-Wen Liu

    IPC分类号： H01L23/10

    CPC分类号： H01L21/78 ,  H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor chip includes a semiconductor substrate; a plurality of low-k dielectric layers over the semiconductor substrate; a first passivation layer over the plurality of low-k dielectric layers; and a second passivation layer over the first passivation layer. A first seal ring is adjacent to an edge of the semiconductor chip, wherein the first seal ring has an upper surface substantially level to a bottom surface of the first passivation layer. A second seal ring is adjacent to the first seal ring and on an inner side of the semiconductor chip than the first seal ring. The second seal ring includes a pad ring in the first passivation layer and the second passivation layer. A trench ring includes at least a portion directly over the first seal ring. The trench ring extends from a top surface of the second passivation layer down to at least an interface between the first passivation layer and the second passivation layer.

    摘要翻译： 半导体芯片包括半导体衬底; 半导体衬底上的多个低k电介质层; 在所述多个低k电介质层上的第一钝化层; 以及在所述第一钝化层上的第二钝化层。 第一密封环邻近半导体芯片的边缘，其中第一密封环具有基本上平坦于第一钝化层的底表面的上表面。 第二密封环与第一密封环相邻，并且在半导体芯片的内侧与第一密封环相邻。 第二密封环包括在第一钝化层和第二钝化层中的焊盘环。 沟槽环包括直接在第一密封环上的至少一部分。 沟槽环从第二钝化层的顶表面延伸到至少第一钝化层和第二钝化层之间的界面。