Abstract:
A mobile communications terminal and a method for preventing an input error of a key input unit are provided. The mobile communications terminal includes a touch sensor unit for sensing a key that is input by touching a keypad region in order to output a key input signal corresponding to the key and a controller adapted to determine a key input according to either a priority between multiple keys from which key signals are received or whether a received key signal was generated inadvertently.
Abstract:
An electronic component embedded printed circuit board and a method of manufacturing the same are disclosed. The electronic component embedded printed circuit board in accordance with an embodiment of the present invention can include a first substrate, which has a cavity formed therein, a first electronic component, which is embedded in the cavity in a face-down manner, a second electronic component, which is stacked on an upper side of the first electronic component and embedded in the cavity in a face-up manner, and a second substrate, which is stacked on upper and lower surfaces of the first substrate.
Abstract:
Provided is a side view light emitting diode package including a housing that includes a front side part and a rear side part integrally formed with the front side part, the front side part having a light emission part; and a lead frame that is located between the front side part and the rear side part, wherein the lead frame includes a first lead connected to a first electrode of a Light Emitting Diode (LED) chip and a second lead connected to a second electrode of the LED chip, wherein the front side part includes a first groove, a second groove, and a third groove, wherein the first lead and the second lead are extended through the first groove and the second groove, respectively, and a heat dissipation part is extended from the first lead through the third groove to an outside of the LED package.
Abstract:
A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin film transistor array substrate may include an insulating substrate on which a gate electrode is formed, a gate insulating film formed on the insulating substrate, an oxide semiconductor pattern disposed on the gate insulating film, an anti-etching pattern formed on the oxide semiconductor pattern, and a source electrode and a drain electrode formed on the anti-etching pattern. The oxide semiconductor pattern may include an edge portion positioned between the source electrode and the drain electrode, and the edge portion may include at least one conductive region and at least one non-conductive region.
Abstract:
An image stabilizer is provided, which compensates for an external turbulence caused by hand-shake by moving an imaging unit. The image stabilizer includes a first yoke, a second yoke, and a driving frame interposed between the first yoke and the second yoke and movable in a vertical direction, a horizontal direction, and a rotation direction with respect to an optical axis. The imaging unit is mounted in a center of the driving frame. The image stabilizer also includes a coil plate connected to a surface of the driving frame facing the first yoke and having a plurality of pattern coils arranged at locations corresponding to a plurality of magnets of the second yoke. The image stabilizer further includes a support unit disposed on a surface of the driving frame facing the second yoke and supporting the driving frame in pitch, yaw and roll directions with respect to the second yoke.
Abstract:
A thin film transistor array panel includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a first electrode and an oxide semiconductor disposed directly on the gate insulating layer; a source electrode and a drain electrode formed on the oxide semiconductor; a passivation layer disposed on the first electrode, the source electrode, and the drain electrode; and a second electrode disposed on the passivation layer.
Abstract:
A method for manufacturing a thin film transistor array panel includes forming a gate line and a gate electrode protruding from the gate line on a substrate; forming a gate insulating layer on the gate line and the gate electrode; depositing sequentially a semiconductor material and a metal material on the gate insulating layer; performing a first etching operation on the semiconductor material and the metal material using a first mask to form a semiconductor layer and a metal layer, the metal layer including a data line, a source electrode, and a drain electrode, in which the drain electrode protrudes from the data line, and the source electrode and the drain electrode having an integral shape; and performing a second etching operation on the metal layer using a second mask to divide the source electrode and the drain electrode.
Abstract:
An electronic component embedded printed circuit board and a method of manufacturing the same are disclosed. The electronic component embedded printed circuit board in accordance with an embodiment of the present invention can include a first substrate, which has a cavity formed therein, a first electronic component, which is embedded in the cavity in a face-down manner, a second electronic component, which is stacked on an upper side of the first electronic component and embedded in the cavity in a face-up manner, and a second substrate, which is stacked on upper and lower surfaces of the first substrate.
Abstract:
A imaging apparatus is disclosed. The imaging apparatus according to an exemplary embodiment includes a camera configured to capture a subject, a combiner configured to be combined with another imaging apparatus, a controller configured to perform capturing by controlling the camera and the other imaging apparatus, respectively, and an image processor configured to in response to a field of view interference occurring between the camera and the other imaging apparatus, delete an area where the field of view interference occurs from an image captured by the camera.
Abstract:
A thin film transistor panel includes a substrate, a light blocking layer on the substrate, a first protective film on the light blocking layer, a first electrode and a second electrode on the first protective film, an oxide semiconductor layer on a portion of the first protective film exposed between the first electrode and the second electrode, an insulating layer, a third electrode overlapping with the oxide semiconductor layer and on the insulating layer, and a fourth electrode on the insulating layer. The light blocking layer includes first sidewalls, and the first protective film includes second sidewalls. The first and the second sidewalls are disposed along substantially the same line.