公开(公告)号：US3243314A

公开(公告)日：1966-03-29

申请号：US22380462

申请日：1962-09-14

Applicant: IBM

Inventor： LEHMAN HERBERT S ,  PLISKIN WILLIAM A ,  RUGGLES JR RUDY L

IPC: C23C8/16 ,  C23C16/40 ,  H01B1/08 ,  H01B3/02 ,  H01B3/10 ,  H01L21/316

CPC classification number: H01L21/02164 ,  C23C8/16 ,  C23C16/402 ,  H01B1/08 ,  H01B3/02 ,  H01B3/10 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31612 ,  Y10S148/003 ,  Y10S148/043 ,  Y10S148/117 ,  Y10S148/118 ,  Y10S438/958

公开(公告)号：US3461360A

公开(公告)日：1969-08-12

申请号：US3461360D

申请日：1965-06-30

Applicant: IBM

Inventor： BARSON FRED ,  LEHMAN HERBERT S

IPC: H01L21/316 ,  H01L27/00 ,  H01L27/088 ,  H01L29/00 ,  H01L29/78 ,  H01L11/00

CPC classification number: H01L29/7816 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L27/00 ,  H01L27/0883 ,  H01L29/1095 ,  H01L29/4238 ,  H01L29/7838 ,  Y10S148/145

公开(公告)号：US3402081A

公开(公告)日：1968-09-17

申请号：US46822565

申请日：1965-06-30

Applicant: IBM

Inventor： LEHMAN HERBERT S

IPC: H01L21/00 ,  H01L21/225

CPC classification number: H01L21/2255 ,  H01L21/00 ,  Y10S438/91 ,  Y10S438/918 ,  Y10S438/923

公开(公告)号：US3874919A

公开(公告)日：1975-04-01

申请号：US45063174

申请日：1974-03-13

Applicant: IBM

Inventor： LEHMAN HERBERT S

IPC: H01L21/76 ,  H01L21/027 ,  H01L21/316 ,  H01L21/318 ,  H01L21/32 ,  H01L21/331 ,  H01L21/762 ,  H01L23/29 ,  H01L29/73 ,  B44D1/18 ,  H01L7/44

CPC classification number: H01L21/76202 ,  H01L21/3185 ,  H01L21/32 ,  H01L23/29 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/085 ,  Y10S148/114 ,  Y10S148/117 ,  Y10T428/261 ,  H01L2924/00

Abstract: An oxidation resistant masking layer for a semiconductor body having a first layer of oxygenated silicon nitride material having a refractive index in the range of 1.60 to 1.85, and a second overlying layer of Si3N4 bonded to the first layer having a thickness of at least 100 Angstroms. A process for forming recessed thermal SiO2 isolation regions in a silicon semiconductor body wherein a masking layer is deposited on the silicon body by depositing a blanket layer of oxygenated silicon nitride and an overlying blanket layer of Si3N4, forming openings in the resultant composite masking layer and etching grooves into the silicon semiconductor layer to the desired thickness thus defining the desired recessed isolation regions, and exposing the resultant structure to an oxidizing environment for a time sufficient to form the desired silicon oxide recessed regions.

Abstract translation: 一种用于半导体本体的抗氧化屏蔽层，其具有折射率在1.60至1.85范围内的第一氧化氮化硅层，以及与第一层结合的厚度至少为100埃的Si 3 N 4的第二覆盖层 。

公开(公告)号：US3667115A

公开(公告)日：1972-06-06

申请号：US82387669

申请日：1969-05-12

Applicant: IBM

Inventor： BARSON FRED ,  LEHMAN HERBERT S

IPC: H01L21/8236 ,  H01L23/29 ,  H01L27/00 ,  H01L27/07 ,  H01L29/00 ,  H01L29/78 ,  B01J17/00 ,  H01G13/00

CPC classification number: H01L29/7816 ,  H01L21/8236 ,  H01L23/291 ,  H01L27/00 ,  H01L27/0716 ,  H01L29/7838 ,  H01L2924/0002 ,  Y10S148/053 ,  Y10S148/145 ,  Y10S148/167 ,  Y10S438/92 ,  Y10S438/98 ,  H01L2924/00

Abstract: A method for forming a semiconductor device having a substantially cup-shaped region of one conductivity type between two regions of opposite conductivity type to preferably form a field effect transistor device. The region may be formed through one opening in an insulating layer located upon the surface of the device. Two successive diffusion operations of opposite conductivity types made through this same opening in the insulating layer forms the cup-shaped region to the desired thickness.

Abstract translation: 一种用于形成半导体器件的方法，该半导体器件具有在相反导电类型的两个区域之间具有一种导电类型的大致杯状区域，以优选形成场效应晶体管器件。 该区域可以通过位于设备表面上的绝缘层中的一个开口形成。 在绝缘层中通过相同的开口形成的相反导电类型的两个连续的扩散操作形成了杯形区域至所需的厚度。