公开(公告)号：US20160216321A1

公开(公告)日：2016-07-28

申请号：US15090717

申请日：2016-04-05

Applicant: International Business Machines Corporation

Inventor： Robert D. Edwards ,  Oleg Gluschenkov ,  Louis V. Medina ,  Tso-Hui Ting ,  Ping-Chuan Wang ,  Yongchun Xin

IPC: G01R31/28 ,  G01R1/073 ,  G01R1/067

CPC classification number: G01R31/2891 ,  G01R1/06794 ,  G01R1/07364

Abstract: A wafer probing system includes a probe card assembly having a plurality of individual probe structures configured make contact with a semiconductor wafer mounted on a motor driven wafer chuck, with each probe structure configured with a pressure sensing unit integrated therewith; and a controller configured to drive the probe card assembly with one or more piezoelectric driver units response to feedback from the pressure sensing units of the individual probe structures.

公开(公告)号：US09354252B2

公开(公告)日：2016-05-31

申请号：US14560138

申请日：2014-12-04

Applicant: International Business Machines Corporation

Inventor： Robert D. Edwards ,  Oleg Gluschenkov ,  Louis V. Medina ,  Tso-Hui Ting ,  Ping-Chuan Wang ,  Yongchun Xin

IPC: G01R1/067 ,  G01R31/28 ,  G01R1/073

CPC classification number: G01R31/2891 ,  G01R1/06794 ,  G01R1/07364

Abstract: A wafer probing system includes a probe card assembly having a plurality of individual probe structures configured make contact with a semiconductor wafer mounted on a motor driven wafer chuck, with each probe structure configured with a pressure sensing unit integrated therewith; and a controller configured to drive the probe card assembly with one or more piezoelectric driver units response to feedback from the pressure sensing units of the individual probe structures.

公开(公告)号：US20140306322A1

公开(公告)日：2014-10-16

申请号：US13860753

申请日：2013-04-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Robert D. Edwards ,  Jeffrey P. Gambino ,  Charles F. Musante ,  Ping-Chuan Wang

IPC: H01L23/00

CPC classification number: H01L24/32 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/27 ,  H01L2224/0345 ,  H01L2224/05018 ,  H01L2224/05025 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05552

Abstract: A semiconductor structure, method of manufacturing the same and design structure thereof are provided. The semiconductor structure includes a substrate including a semiconductor layer and a plurality of TSVs embedded therein. At least one TSV has a TSV tip extending from a backside surface of the substrate. The semiconductor structure further includes a multilayer metal contact structure positioned on the backside surface of the substrate. The multilayer metal contact structure includes at least a conductive layer covering the backside surface of the substrate and covering protruding surfaces of the TSV tip. The conductive layer has a non-planar first surface and a substantially planar second surface opposite of the first surface.

Abstract translation: 提供了一种半导体结构及其制造方法及其结构。 该半导体结构包括包括半导体层和嵌入其中的多个TSV的衬底。 至少一个TSV具有从衬底的背面延伸的TSV尖端。 半导体结构还包括位于基板的背面上的多层金属接触结构。 多层金属接触结构至少包括覆盖基板的背面的导电层，并且覆盖TSV尖端的突出表面。 导电层具有非平面的第一表面和与第一表面相对的基本平坦的第二表面。

公开(公告)号：US09059111B2

公开(公告)日：2015-06-16

申请号：US13860753

申请日：2013-04-11

Applicant: International Business Machines Corporation

Inventor： Robert D. Edwards ,  Jeffrey P. Gambino ,  Charles F. Musante ,  Ping-Chuan Wang

IPC: H01L23/00 ,  H01L21/768

CPC classification number: H01L24/32 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/27 ,  H01L2224/0345 ,  H01L2224/05018 ,  H01L2224/05025 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05552

Abstract: A semiconductor structure, method of manufacturing the same and design structure thereof are provided. The semiconductor structure includes a substrate including a semiconductor layer and a plurality of TSVs embedded therein. At least one TSV has a TSV tip extending from a backside surface of the substrate. The semiconductor structure further includes a multilayer metal contact structure positioned on the backside surface of the substrate. The multilayer metal contact structure includes at least a conductive layer covering the backside surface of the substrate and covering protruding surfaces of the TSV tip. The conductive layer has a non-planar first surface and a substantially planar second surface opposite of the first surface.

Abstract translation: 提供了一种半导体结构及其制造方法及其结构。 该半导体结构包括包括半导体层和嵌入其中的多个TSV的衬底。 至少一个TSV具有从衬底的背面延伸的TSV尖端。 半导体结构还包括位于基板的背面上的多层金属接触结构。 多层金属接触结构至少包括覆盖基板的背面的导电层，并且覆盖TSV尖端的突出表面。 导电层具有非平面的第一表面和与第一表面相对的基本平坦的第二表面。

公开(公告)号：US20150145544A1

公开(公告)日：2015-05-28

申请号：US14560138

申请日：2014-12-04

Applicant: International Business Machines Corporation

Inventor： Robert D. Edwards ,  Oleg Gluschenkov ,  Louis V. Medina ,  Tso-Hui Ting ,  Ping-Chuan Wang ,  Yongchun Xin

IPC: G01R1/067 ,  G01R1/073

CPC classification number: G01R31/2891 ,  G01R1/06794 ,  G01R1/07364

Abstract: A wafer probing system includes a probe card assembly having a plurality of individual probe structures configured make contact with a semiconductor wafer mounted on a motor driven wafer chuck, with each probe structure configured with a pressure sensing unit integrated therewith; and a controller configured to drive the probe card assembly with one or more piezoelectric driver units response to feedback from the pressure sensing units of the individual probe structures.

Abstract translation: 晶片探测系统包括探针卡组件，其具有构造成与安装在马达驱动晶片卡盘上的半导体晶片接触的多个单独的探针结构，每个探针结构配置有与其集成的压力感测单元; 以及控制器，被配置为用一个或多个压电驱动器单元来驱动探针卡组件，以响应来自各个探针结构的压力感测单元的反馈。

公开(公告)号：US09702930B2

公开(公告)日：2017-07-11

申请号：US15090717

申请日：2016-04-05

Applicant: International Business Machines Corporation

Inventor： Robert D. Edwards ,  Oleg Gluschenkov ,  Louis V. Medina ,  Tso-Hui Ting ,  Ping-Chuan Wang ,  Yongchun Xin

IPC: G01R31/02 ,  G01R31/28 ,  G01R1/067 ,  G01R1/073

CPC classification number: G01R31/2891 ,  G01R1/06794 ,  G01R1/07364

Abstract: A wafer probing system includes a probe card assembly having a plurality of individual probe structures configured make contact with a semiconductor wafer mounted on a motor driven wafer chuck, with each probe structure configured with a pressure sensing unit integrated therewith; and a controller configured to drive the probe card assembly with one or more piezoelectric driver units response to feedback from the pressure sensing units of the individual probe structures.

公开(公告)号：US09673089B2

公开(公告)日：2017-06-06

申请号：US14529431

申请日：2014-10-31

Applicant: International Business Machines Corporation

Inventor： Griselda Bonilla ,  Kaushik Chanda ,  Robert D. Edwards ,  Ronald G. Filippi ,  Andrew H. Simon ,  Ping-Chuan Wang

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76834 ,  H01L21/76819 ,  H01L21/76829 ,  H01L21/76849 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved interconnect structure including a dielectric layer having a conductive feature embedded therein, the conductive feature having a first top surface that is substantially coplanar with a second top surface of the dielectric layer; a metal cap layer located directly on the first top surface, wherein the metal cap layer does not substantially extend onto the second top surface; a first dielectric cap layer located directly on the second top surface, wherein the first dielectric cap layer does not substantially extend onto the first top surface and the first dielectric cap layer is thicker than the metal cap layer; and a second dielectric cap layer on the metal cap layer and the first dielectric cap layer. A method of forming the interconnect structure is also provided.

公开(公告)号：US20150056806A1

公开(公告)日：2015-02-26

申请号：US14529431

申请日：2014-10-31

Applicant: International Business Machines Corporation

Inventor： Griselda Bonilla ,  Kaushik Chanda ,  Robert D. Edwards ,  Ronald G. Filippi ,  Andrew H. Simon ,  Ping-Chuan Wang

IPC: H01L21/768

CPC classification number: H01L21/76834 ,  H01L21/76819 ,  H01L21/76829 ,  H01L21/76849 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved interconnect structure including a dielectric layer having a conductive feature embedded therein, the conductive feature having a first top surface that is substantially coplanar with a second top surface of the dielectric layer; a metal cap layer located directly on the first top surface, wherein the metal cap layer does not substantially extend onto the second top surface; a first dielectric cap layer located directly on the second top surface, wherein the first dielectric cap layer does not substantially extend onto the first top surface and the first dielectric cap layer is thicker than the metal cap layer; and a second dielectric cap layer on the metal cap layer and the first dielectric cap layer. A method of forming the interconnect structure is also provided.

Abstract translation: 一种改进的互连结构，其包括具有嵌入其中的导电特征的介电层，所述导电特征具有与介电层的第二顶表面基本共面的第一顶表面; 金属盖层直接位于第一顶表面上，其中金属盖层基本上不延伸到第二顶表面上; 位于所述第二顶表面上的第一电介质盖层，其中所述第一电介质盖层基本上不延伸到所述第一顶表面上，并且所述第一电介质盖层比所述金属盖层厚; 以及金属盖层和第一电介质盖层上的第二电介质盖层。 还提供了形成互连结构的方法。