Abstract:
A method may include forming a plurality of multilayer cores wherein each multilayer core comprises a sheet of cured dielectric material having a layer of metal on each side of the sheet of cured dielectric material, patterning each layer of metal in the plurality of multilayer cores to form wiring traces in each layer of metal, embedding a solder element in at least one sheet of a plurality of sheets of uncured dielectric material, wherein the solder element having a melting point temperature within a temperature range of a curing temperature of the uncured dielectric material, forming a printed circuit board by alternately stacking the plurality of multilayer cores with the plurality of sheets of uncured dielectric material between each multilayer core, laminating the stack of multilayer cores and sheets of uncured dielectric material to cause curing of the sheets of uncured dielectric material and melting of the solder element.
Abstract:
A photonic package is provided. The photonic package includes a base substrate defining an aperture, a top die and a photonic integrated circuit (PIC) die. The top die includes a body with first and second top die sections. The first top die section is connectable with the base substrate. The PIC die includes body with first and second PIC die sections. The PIC die is disposable in the aperture such that the second PIC die section is connectable with the second top die section and the first PIC die section extends beyond the second top die section and is exposed for connection to a waveguide assembly.
Abstract:
A device including a substrate, an upper capacitor, and a lower capacitor is described. The upper capacitor is mounted on the substrate and includes an upper body and a pillar that extends from the upper body towards the substrate. The lower capacitor includes a lower body that is disposed both lateral to the pillar and at least in part between the upper body and the substrate. Each of the upper capacitor and the lower capacitor is a respective discrete circuit component. Such capacitor stacking configurations facilitate the placement of larger numbers of capacitors in close proximity to microprocessor cores in integrated circuit modules without the need to increase module size.
Abstract:
A method including forming a first solder bump on a chip, the first solder bump made of a first alloy, and forming a second solder bump on a chip, the second solder bump made of a second alloy, where the first alloy has a different alloy concentration and is different from the second alloy.
Abstract:
Multicomponent module assembly by identifying a failed site on a laminate comprising a plurality of sites, adding a machine discernible mark associated with the failed site, placing an electrically good element at a successful site; and providing an MCM comprising the laminate, and the electrically good element.
Abstract:
A method may include forming a plurality of multilayer cores wherein each multilayer core comprises a sheet of cured dielectric material having a layer of metal on each side of the sheet of cured dielectric material, patterning each layer of metal in the plurality of multilayer cores to form wiring traces in each layer of metal, embedding a solder element in at least one sheet of a plurality of sheets of uncured dielectric material, wherein the solder element having a melting point temperature within a temperature range of a curing temperature of the uncured dielectric material, forming a printed circuit board by alternately stacking the plurality of multilayer cores with the plurality of sheets of uncured dielectric material between each multilayer core, laminating the stack of multilayer cores and sheets of uncured dielectric material to cause curing of the sheets of uncured dielectric material and melting of the solder element.
Abstract:
A standoff structure for providing improved interconnects is provided, wherein the structure employs nickel copper alloy or copper structures having increased resistivity.
Abstract:
A method including identifying a first connection location on a chip having a first connection type and a second connection location on the chip having a second connection type, applying a first solder alloy to the first connection location, heating the first solder alloy to a temperature sufficient to cause the first solder alloy to reflow, applying a second solder alloy to the second connection location, and heating the second solder alloy to a temperature sufficient to cause the second solder alloy to reflow.
Abstract:
A device including a substrate, an upper capacitor, and a lower capacitor is described. The upper capacitor is mounted on the substrate and includes an upper body and a pillar that extends from the upper body towards the substrate. The lower capacitor includes a lower body that is disposed both lateral to the pillar and at least in part between the upper body and the substrate. Each of the upper capacitor and the lower capacitor is a respective discrete circuit component. Such capacitor stacking configurations facilitate the placement of larger numbers of capacitors in close proximity to microprocessor cores in integrated circuit modules without the need to increase module size.
Abstract:
A photonic package is provided. The photonic package includes a base substrate defining an aperture, a top die and a photonic integrated circuit (PIC) die. The top die includes a body with first and second top die sections. The first top die section is connectable with the base substrate. The PIC die includes body with first and second PIC die sections. The PIC die is disposable in the aperture such that the second PIC die section is connectable with the second top die section and the first PIC die section extends beyond the second top die section and is exposed for connection to a waveguide assembly.