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    Apparatus for providing RF return current path control in a semiconductor wafer processing system
    6.
    发明授权
    Apparatus for providing RF return current path control in a semiconductor wafer processing system 有权
    用于在半导体晶片处理系统中提供RF返回电流路径控制的装置

    公开(公告)号：US06221221B1

    公开(公告)日：2001-04-24

    申请号：US09192872

    申请日：1998-11-16

    申请人： Ayad Al-Shaikh ,  Michael Rosenstein ,  Bradley O. Stimson ,  Jianming Fu ,  Praburam Gopalraja

    发明人： Ayad Al-Shaikh ,  Michael Rosenstein ,  Bradley O. Stimson ,  Jianming Fu ,  Praburam Gopalraja

    IPC分类号： C23C1434

    CPC分类号： H01J37/32577

    摘要： Apparatus providing a low impedance RF return current path between a shield member and a pedestal in a semiconductor wafer processing chamber. The return path reduces RF voltage drop between the shield member and the pedestal during processing. The return path comprises a conductive strap connected to the pedestal and a conductive bar attached to the strap. A toroidal spring makes multiple parallel electrical connections between the conductive bar and the shield member. A support assembly, attached to a collar on the chamber wall, supports the conductive bar.

    摘要翻译： 一种在半导体晶片处理室中提供屏蔽构件和基座之间的低阻抗RF返回电流路径的装置。 返回路径在处理期间降低了屏蔽构件和基座之间的RF电压降。 返回路径包括连接到基座的导电带和附接到带的导电条。 环形弹簧在导电棒和屏蔽构件之间形成多个平行的电连接。 附接到室壁上的套环的支撑组件支撑导电棒。

    Remote plasma pre-clean with low hydrogen pressure
    9.
    发明授权
    Remote plasma pre-clean with low hydrogen pressure 有权
    远程等离子体预清洁，氢气压力低

    公开(公告)号：US07704887B2

    公开(公告)日：2010-04-27

    申请号：US11334803

    申请日：2006-01-17

    申请人： Xinyu Fu ,  John Forster ,  Jick Yu ,  Ajay Bhatnagar ,  Praburam Gopalraja

    发明人： Xinyu Fu ,  John Forster ,  Jick Yu ,  Ajay Bhatnagar ,  Praburam Gopalraja

    IPC分类号： B08B3/00 ,  H01L21/302

    CPC分类号： H01L21/02063 ,  G03F7/427 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/02068 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/76814

    摘要： A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter, removes hydrogen and other ions from the output of the remote plasma source and a supply tube from the remote plasma source includes a removable dielectric liner in combination with dielectric showerhead and manifold liner.

    摘要翻译： 一种等离子体清洗方法，特别适用于在溅射沉积之前从具有高碳含量的多孔低k电介质中除去光致抗蚀剂和氧化物残留物。 远程等离子体源产生主要为氢自由基的等离子体。 氢气压力可以保持相对较低，例如在30毫乇。 任选地，氦气可以被加到处理气体中，氢分压保持在150毫乇以下。 在400毫乇的氢气和氦气中，70％的氦气可获得卓越的结果。 优选地，诸如磁性过滤器的离子过滤器从远程等离子体源的输出中除去氢和其它离子，并且来自远程等离子体源的供应管包括与介电喷头和歧管衬套组合的可移除绝缘衬垫。