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24 条记录 (耗时 0.017 秒)

    Encapsulation of conductive lines of semiconductor devices
    1.
    发明授权
    Encapsulation of conductive lines of semiconductor devices 有权
    封装半导体器件的导线

    公开(公告)号：US07087438B2

    公开(公告)日：2006-08-08

    申请号：US10898858

    申请日：2004-07-26

    申请人： Ihar Kasko ,  Kia-Seng Low ,  John P. Hummel

    发明人： Ihar Kasko ,  Kia-Seng Low ,  John P. Hummel

    IPC分类号： H01L21/00

    CPC分类号： H01L43/12 ,  H01L27/222

    摘要： The invention relates to a method of encapsulating conductive lines of semiconductor devices and a structure thereof. An encapsulating protective material, such as TaN, Ta, Ti, TiN, or combinations thereof is disposed over conductive lines of a semiconductor device. The encapsulating protective material protects the conductive lines from harsh etch chemistries when a subsequently deposited material layer is patterned and etched. The encapsulating protective material is conductive and may be left remaining in the completed semiconductor device. The encapsulating material is patterned using a masking material, and processing of the semiconductor device is then continued. The masking material may be left remaining in the structure as part of a subsequently deposited insulating material layer.

    摘要翻译： 本发明涉及一种封装半导体器件的导线的方法及其结构。 在半导体器件的导线上设置有诸如TaN，Ta，Ti，TiN或其组合的封装保护材料。 当后续沉积的材料层被图案化和蚀刻时，封装保护材料保护导电线免受苛刻蚀刻化学物质的影响。 封装保护材料是导电的，并且可以保留在完成的半导体器件中。 使用掩模材料对封装材料进行图案化，然后继续加工半导体器件。 掩模材料可以留在结构中作为随后沉积的绝缘材料层的一部分。

    Magnetic switching device
    3.
    发明授权
    Magnetic switching device 失效
    磁性开关装置

    公开(公告)号：US07097777B2

    公开(公告)日：2006-08-29

    申请号：US11070856

    申请日：2005-03-02

    申请人： Gregory Costrini ,  John P. Hummel ,  George Stojakovic ,  Kia-Seng Low

    发明人： Gregory Costrini ,  John P. Hummel ,  George Stojakovic ,  Kia-Seng Low

    IPC分类号： B44C1/22

    CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/308 ,  H01L43/12

    摘要： A method of forming a magnetic switching device is provided. The method includes depositing a bilayer hardmask, which may comprise a first mask layer of titanium nitride with a second mask layer of tungsten formed thereon. A first lithography process is performed to pattern the second mask layer, and a second lithography process is performed to pattern the first mask layer. Thereafter, the magnetic tunnel junction stack may be patterned in accordance with the first mask layer. An etching process may be performed to further pattern the first mask layer in accordance with the second mask layer. An optional passivation layer may be formed over the first mask layer and the second mask layer.

    摘要翻译： 提供一种形成磁性开关装置的方法。 该方法包括沉积双层硬掩模，其可以包括氮化钛的第一掩模层和形成在其上的钨的第二掩模层。 执行第一光刻处理以对第二掩模层进行图案化，并且执行第二光刻处理以对第一掩模层进行图案化。 此后，根据第一掩模层可以对磁性隧道结堆叠进行构图。 可以执行蚀刻工艺以根据第二掩模层进一步图案化第一掩模层。 可以在第一掩模层和第二掩模层上形成可选的钝化层。

    Insulating cap layer and conductive cap layer for semiconductor devices with magnetic material layers
    4.
    发明授权
    Insulating cap layer and conductive cap layer for semiconductor devices with magnetic material layers 有权
    具有磁性材料层的半导体器件的绝缘覆盖层和导电覆盖层

    公开(公告)号：US06680500B1

    公开(公告)日：2004-01-20

    申请号：US10210742

    申请日：2002-07-31

    申请人： Kia-Seng Low ,  John P. Hummel ,  Igor Kasko ,  Gregory Costrini

    发明人： Kia-Seng Low ,  John P. Hummel ,  Igor Kasko ,  Gregory Costrini

    IPC分类号： H01L2982

    CPC分类号： H01L27/222 ,  H01L21/76834 ,  H01L21/7684 ,  H01L43/08 ,  H01L43/12

    摘要： A semiconductor device (100) and method of fabrication thereof, wherein a plurality of first conductive lines (116) are formed in a dielectric layer (112) over a substrate (110), and an insulating cap layer (140) is disposed over the first conductive lines (116) and exposed portions of the dielectric layer (112). The insulating cap layer (140) is patterned and etched to expose stack portions of the first conductive lines (116). A conductive cap layer (144) is deposited over the exposed portions of the first conductive lines (116). A magnetic material stack (118) is disposed over the insulating cap layer (140), and the magnetic material stack is etched to form magnetic stacks. The insulating cap layer (140) and conductive cap layer (144) protect the underlying first conductive line (116) material during the etching processes.

    摘要翻译： 一种半导体器件（100）及其制造方法，其中在衬底（110）上的电介质层（112）中形成多个第一导电线（116），并且绝缘覆盖层（140）设置在 第一导电线（116）和介电层（112）的暴露部分。 对绝缘覆盖层（140）进行图案化和蚀刻以暴露第一导电线（116）的堆叠部分。 导电盖层（144）沉积在第一导线（116）的暴露部分上。 磁性材料堆叠（118）设置在绝缘盖层（140）上，并且磁性材料堆叠被蚀刻以形成磁性堆叠。 在蚀刻过程期间，绝缘覆盖层（140）和导电覆盖层（144）保护下面的第一导电线（116）材料。

    Post metalization chem-mech polishing dielectric etch
    6.
    发明授权
    Post metalization chem-mech polishing dielectric etch 失效
    后金属化化学抛光电介质蚀刻

    公开(公告)号：US06551924B1

    公开(公告)日：2003-04-22

    申请号：US09432683

    申请日：1999-11-02

    申请人： Timothy J. Dalton ,  John P. Hummel

    发明人： Timothy J. Dalton ,  John P. Hummel

    IPC分类号： H01L214763

    CPC分类号： H01L21/76802 ,  H01L21/76807 ,  H01L21/76885

    摘要： A method for etching an insulating layer without damage to the conducting layer and associated liner layer within the insulating layer. A dielectric layer is deposited on a semiconductor substrate and then patterned. A liner layer and a conducting layer are then deposited within the patterned dielectric. A passivating layer is deposited on top of the conducting layer after the conducting layer has been planarized through chemical-mechanical polishing while simultaneously etching the dielectric layer through a process that does not damage the underlying conducting and liner layers. The insulating layer is preferably a dielectric such as silicon dioxide and the liner layer is tantalum, tantalum nitride or a combination of the two. The passivating layer preferably consists of carbon and fluorine bound up in various chemical forms. The conducting layer preferably consists of copper. Recipes for simultaneously forming the passivating layer and etching the dielectric layer, and for removing the passivating layer without damaging the underlying conducting and liner layers are provided.

    摘要翻译： 一种用于蚀刻绝缘层而不损坏绝缘层内的导电层和相关衬里层的方法。 介电层沉积在半导体衬底上，然后构图。 然后在图案化的电介质中沉积衬垫层和导电层。 在通过化学机械抛光平面化导电层之后，在导电层的顶部上沉积钝化层，同时通过不损坏下面的导电层和衬层的工艺同时蚀刻介电层。 绝缘层优选是诸如二氧化硅的电介质，并且衬垫层是钽，氮化钽或两者的组合。 钝化层优选由以各种化学形式结合的碳和氟组成。 导电层优选由铜组成。 提供了用于同时形成钝化层和蚀刻介电层以及用于去除钝化层而不损坏下面的导电层和衬层的配方。

    Formation of vertical devices by electroplating
    7.
    发明授权
    Formation of vertical devices by electroplating 有权
    通过电镀形成垂直装置

    公开(公告)号：US08247905B2

    公开(公告)日：2012-08-21

    申请号：US12538782

    申请日：2009-08-10

    申请人： Hariklia Deligianni ,  Qiang Huang ,  John P. Hummel ,  Lubomyr T. Romankiw ,  Mary B. Rothwell

    发明人： Hariklia Deligianni ,  Qiang Huang ,  John P. Hummel ,  Lubomyr T. Romankiw ,  Mary B. Rothwell

    IPC分类号： H01L29/40

    CPC分类号： H01L21/76879 ,  H01L21/2885 ,  Y10S205/925

    摘要： The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.

    摘要翻译： 本发明涉及通过电镀形成垂直导电结构的方法。 具体地，首先形成模板结构，其包括衬底，位于衬底表面上的离散金属接触焊盘，分立金属接触焊盘和衬底两者之间的级间电介质（ILD）层，以及金属通孔结构 延伸穿过ILD层到分立的金属接触垫上。 接下来，在模板结构中形成垂直通孔，其延伸穿过ILD层到分立的金属接触垫上。 然后通过电镀在垂直通孔中形成垂直导电结构，电镀通过通过金属通孔结构将电镀电流施加到离散的金属接触焊盘来进行。 优选地，模板结构包括多个分立的金属接触焊盘，多个金属通孔结构以及用于形成多个垂直导电结构的多个垂直通孔。

    Method of forming vertical contacts in integrated circuits
    8.
    发明授权
    Method of forming vertical contacts in integrated circuits 有权
    在集成电路中形成垂直触点的方法

    公开(公告)号：US07803639B2

    公开(公告)日：2010-09-28

    申请号：US11619623

    申请日：2007-01-04

    申请人： Solomon Assefa ,  Michael C. Gaidis ,  John P. Hummel ,  Sivananda K. Kanakasabapathy

    发明人： Solomon Assefa ,  Michael C. Gaidis ,  John P. Hummel ,  Sivananda K. Kanakasabapathy

    IPC分类号： H01L21/00 ,  H01L21/4763 ,  H01L21/44

    CPC分类号： H01L43/12 ,  H01L21/76807 ,  H01L21/76816

    摘要： A method of forming vertical contacts in an integrated circuit that couple one or more metal lines in a given metallization level to first and second features occupying different levels in the integrated circuit comprises various processing steps. A first etch stop layer is formed overlying at least of portion of the first feature while a second etch stop layer is formed overlying at least a portion of the second feature. An ILD layer is formed overlying the first and second etch stop layers. A photolithographic mask is formed overlying the ILD layer. The photolithographic mask defines a first opening over the first feature and a second opening over the second feature. A first etch process etches a first hole in the ILD layer through the first opening in the photolithographic mask that lands on the first etch stop layer and etches a second hole in the ILD layer through the second opening that lands on the second etch stop layer. Subsequently, a second etch process further etches the first hole so that it lands on the first feature.

    摘要翻译： 在集成电路中形成垂直触点的方法，其将给定金属化水平中的一个或多个金属线耦合到在集成电路中占据不同电平的第一和第二特征包括各种处理步骤。 形成第一蚀刻停止层，覆盖第一特征的至少一部分，而形成第二蚀刻停止层，覆盖第二特征的至少一部分。 形成覆盖在第一和第二蚀刻停止层上的ILD层。 在ILD层上形成光刻掩模。 光刻掩模限定第一特征上的第一开口和第二特征上的第二开口。 第一蚀刻工艺通过位于第一蚀刻停止层上的光刻掩模中的第一开口蚀刻ILD层中的第一孔，并通过第二开口蚀刻ILD层中的第二孔，该第二孔位于第二蚀刻停止层上。 随后，第二蚀刻工艺进一步蚀刻第一孔使其落在第一特征上。

    Utilizing Sidewall Spacer Features to Form Magnetic Tunnel Junctions in an Integrated Circuit
    9.
    发明申请
    Utilizing Sidewall Spacer Features to Form Magnetic Tunnel Junctions in an Integrated Circuit 审中-公开
    利用侧壁间隔件在集成电路中形成磁隧道结

    公开(公告)号：US20080211055A1

    公开(公告)日：2008-09-04

    申请号：US12120915

    申请日：2008-05-15

    申请人： Solomon Assefa ,  Michael C. Gaidis ,  Sivananda Kanakasabapathy ,  John P. Hummel ,  David W. Abraham

    发明人： Solomon Assefa ,  Michael C. Gaidis ,  Sivananda Kanakasabapathy ,  John P. Hummel ,  David W. Abraham

    IPC分类号： H01L43/00 ,  H01L43/12

    CPC分类号： H01L43/12 ,  H01L27/222

    摘要： Novel methods for reliably and reproducibly forming magnetic tunnel junctions in integrated circuits are described. In accordance with aspects of the invention, sidewall spacer features are utilized during the processing of the film stack. Advantageously, these sidewall spacer features create a tapered masking feature which helps to avoid byproduct redeposition during the etching of the MTJ film stack, thereby improving process yield. Moreover, the sidewall spacer features may be used as encapsulating layers during subsequent processing steps and as vertical contacts to higher levels of metallization.

    摘要翻译： 描述了在集成电路中可靠且可重复地形成磁隧道结的新方法。 根据本发明的方面，在膜叠层的处理期间利用侧壁间隔物特征。 有利地，这些侧壁间隔物特征产生锥形掩蔽特征，其有助于避免在MTJ膜叠层的蚀刻期间的副产物再沉积，从而提高工艺产率。 此外，侧壁间隔物特征可以在随后的处理步骤期间用作包封层，并且可以用作垂直接触以进行更高级别的金属化。

    Dual damascene flowable oxide insulation structure and metallic barrier
    10.
    发明授权
    Dual damascene flowable oxide insulation structure and metallic barrier 有权
    双镶嵌可流动氧化物绝缘结构和金属屏障

    公开(公告)号：US06727589B2

    公开(公告)日：2004-04-27

    申请号：US09725862

    申请日：2000-11-30

    申请人： Stephen E. Greco ,  John P. Hummel ,  Joyce Liu ,  Vincent J. McGahay ,  Rebecca Mih ,  Kamalesh Srivastava

    发明人： Stephen E. Greco ,  John P. Hummel ,  Joyce Liu ,  Vincent J. McGahay ,  Rebecca Mih ,  Kamalesh Srivastava

    IPC分类号： H01L2348

    CPC分类号： H01L21/76843 ,  H01L21/31116 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/7684

    摘要： A method and structure for protecting a flowable oxide insulator in a semiconductor by oxidizing sidewalls of the FOX insulator, optionally nitridizing the oxidized FOX sidewalls, and then covering all surfaces of a trough or plurality of troughs in the FOX insulator, including the sidewalls, with a conductive secondary protective layer. In a multiple layer damascene structure, the surface of the FOX insulator is also oxidized, an additional oxide layer is deposited thereon, and a nitride layer deposited on the oxide layer. Then steps are repeated to obtain a comparable damascene structure. The materials can vary and each damascene layer may be either a single damascene or a dual damascene layer.

    摘要翻译： 一种通过氧化FOX绝缘体的侧壁来保护半导体中的可流动的氧化物绝缘体的方法和结构，可选地将氧化的FOX侧壁氮化，然后覆盖包括侧壁在内的FOX绝缘体中的槽或多个槽的所有表面， 导电二级保护层。 在多层镶嵌结构中，FOX绝缘体的表面也被氧化，在其上沉积另外的氧化物层，并且沉积在氧化物层上的氮化物层。 然后重复步骤以获得可比较的镶嵌结构。 材料可以变化，并且每个镶嵌层可以是单镶嵌层或双镶嵌层。