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33 条记录 (耗时 0.036 秒)

    Method of fabricating a BI-CMOS integrated circuit device
    3.
    发明授权
    Method of fabricating a BI-CMOS integrated circuit device 失效
    制造BI-CMOS集成电路器件的方法

    公开(公告)号：US5366907A

    公开(公告)日：1994-11-22

    申请号：US24730

    申请日：1993-02-26

    申请人： Masakazu Sasaki

    发明人： Masakazu Sasaki

    IPC分类号： H01L27/06 ,  H01L21/331 ,  H01L21/822 ,  H01L21/8249 ,  H01L27/04 ,  H01L29/73 ,  H01L29/732 ,  H01L21/265

    CPC分类号： H01L21/8249 ,  Y10S148/009

    摘要： The invention provides a novel method of fabricating a semiconductor integrated circuit device involving a bipolar transistor having a collector contact with side-wall oxide films. After forming an active base region, an oxide film is formed on an entire surface of the device by a vapor phase growth method. An anisotropic etching of the oxide film is accomplished by using a photo-resist pattern so that the oxide film remains both on the active base region and at opposite side portions of the collector contact. Alternatively, the oxide film remains not only on the active base region but also over and in the vicinity of the collector contact. The active base region is free from any damage such as etching and crystal defects caused by the anisotropic etching, as being covered with the remaining oxide film. A graft base region is formed by ion-implantation with using the above remaining oxide film as a mask. An edge portion of the remaining oxide film exists directly over a boundary line between the active base region and the graft base region.

    摘要翻译： 本发明提供一种制造半导体集成电路器件的新颖方法，该半导体集成电路器件涉及具有与侧壁氧化膜的集电极接触的双极晶体管 在形成活性碱性区域之后，通过气相生长法在器件的整个表面上形成氧化物膜。 氧化膜的各向异性蚀刻是通过使用光致抗蚀剂图案来实现的，使得氧化膜保持在集电触点的有源基极区域和相对侧部分上。 或者，氧化物膜不仅保留在活性碱区域上，而且保留在集电极触点的上方和附近。 活性碱性区域不存在由各向异性蚀刻引起的蚀刻和晶体缺陷等任何损伤，被残留的氧化物膜覆盖。 通过使用上述剩余氧化膜作为掩模通过离子注入形成移植物基区。 剩余氧化物膜的边缘部分直接存在于活性碱性区域和移植物基底区域之间的边界线上。

    Actuator mechanism for magnetic disk drive
    4.
    发明授权
    Actuator mechanism for magnetic disk drive 有权
    磁盘驱动器执行机构

    公开(公告)号：US08289657B2

    公开(公告)日：2012-10-16

    申请号：US12286084

    申请日：2008-09-25

    申请人： Mutsuro Ohta ,  Masakazu Sasaki ,  Takeshi Chawanya ,  Kenji Suzuki

    发明人： Mutsuro Ohta ,  Masakazu Sasaki ,  Takeshi Chawanya ,  Kenji Suzuki

    IPC分类号： G11B5/54

    CPC分类号： G11B5/5569

    摘要： Embodiments of the present invention help provide a simple and inexpensive actuator mechanism for a magnetic disk drive. The actuator mechanism includes an approximately circular coil and a simple shaped magnet, and is capable of displaying adequate performance required for the magnetic disk drive. According to one embodiment, the magnetic disk drive includes an actuator mechanism which has an approximately circular coil and an approximately rectangular magnet. The long axis direction of the rectangular magnet is oriented in parallel to a straight line connecting the center of the inner circle of the circular coil in a state in which the actuator is positioned at the outermost circumference of a data area and the center of the inner circle of the circular coil in a state in which the actuator is positioned at the innermost circumference of the data area.

    摘要翻译： 本发明的实施例有助于提供用于磁盘驱动器的简单和便宜的致动器机构。 致动器机构包括近似圆形的线圈和简单形状的磁体，并且能够显示磁盘驱动器所需的足够的性能。 根据一个实施例，磁盘驱动器包括具有近似圆形线圈和近似矩形磁体的致动器机构。 矩形磁体的长轴方向平行于连接圆形线圈的内圆的中心的直线，该直线位于致动器位于数据区的最外周的状态，内周的中心 圆形线圈的圆圈处于致动器位于数据区域的最内周的状态。

    Electric double-layer capacitor
    5.
    发明授权
    Electric double-layer capacitor 有权
    双电层电容器

    公开(公告)号：US06995969B2

    公开(公告)日：2006-02-07

    申请号：US10507424

    申请日：2003-03-19

    申请人： Shuuichi Araki ,  Yoshiaki Yamada ,  Masakazu Sasaki

    发明人： Shuuichi Araki ,  Yoshiaki Yamada ,  Masakazu Sasaki

    IPC分类号： H01G9/00 ,  H01G2/08

    CPC分类号： B60L11/005 ,  B60L11/1864 ,  B60L11/1879 ,  H01G2/08 ,  H01G9/06 ,  H01G9/08 ,  H01G9/26 ,  H01G11/10 ,  H01G11/82 ,  Y02E60/13 ,  Y02T10/7005 ,  Y02T10/7022 ,  Y02T10/7061

    摘要： An electric double layered capacitor is provided, which can ensure a cooling capability by radiating heat to an outside air. The electric double layered capacitor comprises a capacitor cell 1 including a bag-shaped soft case in which a plurality of positive electrodes and negative electrodes, and a separator are received and laminated together with an electrolytic solution, a belt-shaped radiating fin 5a which extends from a rim of the soft case, a heat transfer frame 15 to sandwich the radiating fin 5a, and a metal hard case 21 for thermal radiation in which a plurality of the capacitor cells 1 are received/laminated through the heat transfer frames 15.

    摘要翻译： 提供了一种双层电容器，其通过向外部空气辐射热量来确保冷却能力。 电双层电容器包括：电容器单元1，其包括多个正极和负极的袋状软壳体，以及电解液接收并层叠的隔膜;带状辐射翅片5a，其形成为： 从软壳的边缘延伸，传热框架15夹住散热片5a，以及用于热辐射的金属硬壳21，其中多个电容器单元1通过传热框架15接收/层压 。

    Electric double-layer capacitor
    6.
    发明申请
    Electric double-layer capacitor 有权
    双电层电容器

    公开(公告)号：US20050168918A1

    公开(公告)日：2005-08-04

    申请号：US10507424

    申请日：2003-03-19

    申请人： Shuuichi Araki ,  Yoshiaki Yamada ,  Masakazu Sasaki

    发明人： Shuuichi Araki ,  Yoshiaki Yamada ,  Masakazu Sasaki

    IPC分类号： H01G9/00 ,  H01G11/10 ,  H01G11/82

    CPC分类号： B60L11/005 ,  B60L11/1864 ,  B60L11/1879 ,  H01G2/08 ,  H01G9/06 ,  H01G9/08 ,  H01G9/26 ,  H01G11/10 ,  H01G11/82 ,  Y02E60/13 ,  Y02T10/7005 ,  Y02T10/7022 ,  Y02T10/7061

    摘要： An electric double layered capacitor is provided, which can ensure a cooling capability by radiating heat to an outside air. The electric double layered capacitor comprises a capacitor cell 1 including a bag-shaped soft case in which a plurality of positive electrodes and negative electrodes, and a separator are received and laminated together with an electrolytic solution, a belt-shaped radiating fin 5a which extends from a rim of the soft case, a heat transfer frame 15 to sandwich the radiating fin 5a, and a metal hard case 21 for thermal radiation in which a plurality of the capacitor cells 1 are received/laminated through the heat transfer frames 15.

    摘要翻译： 提供了一种双层电容器，其通过向外部空气辐射热量来确保冷却能力。 电双层电容器包括：电容器单元1，其包括多个正极和负极的袋状软壳体，以及电解液接收并层叠的隔膜;带状辐射翅片5a，其形成为： 从软壳的边缘延伸，传热框架15夹住散热片5a，以及用于热辐射的金属硬壳21，其中多个电容器单元1通过传热框架15接收/层压 。

    Power source system for driving vehicle
    7.
    发明授权
    Power source system for driving vehicle 失效
    车辆用电源系统

    公开(公告)号：US06777912B1

    公开(公告)日：2004-08-17

    申请号：US10048589

    申请日：2002-05-03

    申请人： Jun Yamada ,  Yoshiaki Yamada ,  Tsutomu Sasaki ,  Masakazu Sasaki

    发明人： Jun Yamada ,  Yoshiaki Yamada ,  Tsutomu Sasaki ,  Masakazu Sasaki

    IPC分类号： H01M1046

    CPC分类号： B60K6/28 ,  B60K6/46 ,  B60L11/005 ,  B60W10/26 ,  Y02T10/6217 ,  Y02T10/7022 ,  Y10S903/907

    摘要： This invention allows storage electric power to be secured at a maximum by reducing variation in potential between a plurality of capacitors constituting an electric power storage device as follows. A plurality of capacitor banks are provided, in parallel, in the electric power storage device. A part of the respective capacitor banks is halted depending on the current flowing through the electric power storage device. Electric charge of the respective capacitor parallel circuits is individually discharged in the halted capacitor bank, thereby, the terminal voltage of the respective capacitor parallel circuits are equalized.

    摘要翻译： 本发明通过减少构成蓄电装置的多个电容器之间的电位变化，能够最大限度地确保蓄电量。 多个电容器组并联设置在电力存储装置中。 各个电容器组的一部分依赖于流过蓄电装置的电流而停止。 各个电容器并联电路的电荷在停止的电容器组中单独放电，从而各个电容器并联电路的端电压相等。

    Semiconductor non-volatile memory device having floating gate type field effect transistors for memory cells bipolar transistors for a high-speed circuit
    8.
    发明授权
    Semiconductor non-volatile memory device having floating gate type field effect transistors for memory cells bipolar transistors for a high-speed circuit 失效
    具有用于高速电路的存储单元双极晶体管的浮栅型场效应晶体管的半导体非易失性存储器件

    公开(公告)号：US6069389A

    公开(公告)日：2000-05-30

    申请号：US943253

    申请日：1997-10-17

    申请人： Masakazu Sasaki

    发明人： Masakazu Sasaki

    IPC分类号： G11C17/00 ,  G11C16/02 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

    CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/11546

    摘要： A semiconductor flash memory device includes floating gate type field effect transistors serving as memory cells, field effect transistors for forming peripheral circuits and bipolar transistors for forming other peripheral circuits expected to drive heavy load at high speed, and both of the floating gate electrodes and the emitter electrodes and both of the control gate electrodes and the gate electrodes are patterned from a first doped polysilicon and a second doped polysilicon so as to simplify a process sequence for fabricating the semiconductor flash memory device.

    摘要翻译： 一种半导体闪速存储器件包括用作存储单元的浮栅型场效应晶体管，用于形成外围电路的场效应晶体管和用于形成预期以高速驱动重负载的其它外围电路的双极晶体管，以及浮置栅电极和 从第一掺杂多晶硅和第二掺杂多晶硅对发射极和控制栅电极以及栅电极进行构图，以简化用于制造半导体闪速存储器件的工艺顺序。

    Semiconductor having polycrystalline silicon sandwiched by semiconductor substrate and metal silicide
    9.
    发明授权
    Semiconductor having polycrystalline silicon sandwiched by semiconductor substrate and metal silicide 失效
    半导体具有夹在半导体衬底和金属硅化物之间的多晶硅

    公开(公告)号：US5701029A

    公开(公告)日：1997-12-23

    申请号：US535400

    申请日：1995-09-28

    申请人： Masakazu Sasaki

    发明人： Masakazu Sasaki

    IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L29/417 ,  H01L29/45 ,  H01L29/43

    CPC分类号： H01L29/456 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/41708

    摘要： In a semiconductor device including a semiconductor substrate, an impurity doped region formed in the semiconductor substrate, an insulating layer formed on the semiconductor substrate and having an opening leading to the impurity doped region, a polycrystalline silicon layer formed on the insulating layer and the impurity doped region, and a metal silicide layer formed on the polycrystalline silicon layer, a transverse thickness of the polycrystalline silicon layer at a sidewall of the insulating layer is larger than a longitudinal thickness of the polycrystalline silicon layer at a bottom of the opening and at a surface of the insulating layer.

    摘要翻译： 在包括半导体衬底的半导体器件中，形成在半导体衬底中的杂质掺杂区域，形成在半导体衬底上并具有通向杂质掺杂区域的开口的绝缘层，形成在绝缘层上的多晶硅层和杂质 掺杂区域和形成在多晶硅层上的金属硅化物层，绝缘层侧壁处的多晶硅层的横向厚度大于开口底部的多晶硅层的纵向厚度， 绝缘层的表面。

    Load-unload ramp structure with cantilevered fin portion configured to reduce drop shock in a hard-disk drive
    10.
    发明授权
    Load-unload ramp structure with cantilevered fin portion configured to reduce drop shock in a hard-disk drive 有权
    具有悬臂翅片部分的卸载斜坡结构被配置为减少硬盘驱动器中的跌落冲击

    公开(公告)号：US08493690B1

    公开(公告)日：2013-07-23

    申请号：US13340586

    申请日：2011-12-29

    申请人： Makoto Ono ,  Masakazu Sasaki

    发明人： Makoto Ono ,  Masakazu Sasaki

    IPC分类号： G11B5/54

    CPC分类号： G11B21/22

    摘要： A load-unload ramp structure with a cantilevered fin portion to reduce drop shock in a hard-disk drive (HDD). The load-unload ramp structure includes a first load-unload ramp, a fin, and a bracket portion. The first load-unload ramp is configured to lift a first head-slider away from a magnetic-recording disk. The fin is coupled to the first load-unload ramp and is disposed below a first parking position of the first head-slider. The fin includes a fin base portion and a first cantilevered fin portion. The first cantilevered fin portion is coupled to, and extends outward from, the fin base portion. The bracket portion is integrally attached to the first load-unload ramp, and is configured to allow affixing the load-unload ramp structure in a static position in a disk-enclosure base of the HDD. A HDD including the load-unload ramp structure and a method for providing protection from drop shock are also provided.

    摘要翻译： 具有悬臂翅片部分的卸载斜坡结构，以减少硬盘驱动器（HDD）中的跌落冲击。 负载卸载斜坡结构包括第一负载卸载斜坡，鳍片和支架部分。 第一个装载卸载斜坡被配置为将第一磁头滑块从磁记录盘提起。 翅片联接到第一负载卸载斜坡并且设置在第一头部滑块的第一停车位置的下方。 翅片包括翅片基部和第一悬臂翅部。 第一悬臂翅片部分联接到翅片基部并从翅片基部向外延伸。 托架部分整体地附接到第一装载 - 卸载斜坡，并且被配置为允许将装载 - 卸载斜坡结构固定在HDD的盘形外壳基座中的静止位置。 还提供了包括卸载斜坡结构的HDD和用于提供防止跌落冲击的保护的方法。