公开(公告)号：US08389974B2

公开(公告)日：2013-03-05

申请号：US13017863

申请日：2011-01-31

申请人： Robert J. Mears ,  Robert John Stephenson ,  Marek Hytha ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Xiangyang Huang

发明人： Robert J. Mears ,  Robert John Stephenson ,  Marek Hytha ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Xiangyang Huang

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L29/15 ,  H01L31/076 ,  H01L33/06 ,  H01L33/08 ,  H01L33/28 ,  H01S5/3072 ,  Y02E10/548

摘要： A multiple-wavelength opto-electronic device may include a substrate and a plurality of active optical devices carried by the substrate and operating at different respective wavelengths. Each optical device may include a superlattice comprising a plurality of stacked groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon.

摘要翻译： 多波长光电器件可以包括衬底和由衬底承载并在不同的相应波长下操作的多个有源光学器件。 每个光学器件可以包括超晶格，其包括多个堆叠的层组，并且每组层可以包括限定基极半导体部分和其上的至少一个非半导体单层的多个堆叠的半导体单层。

公开(公告)号：US07718996B2

公开(公告)日：2010-05-18

申请号：US11677098

申请日：2007-02-21

申请人： Ilija Dukovski ,  Robert John Stephenson ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Robert J. Mears ,  Xiangyang Huang ,  Marek Hytha

发明人： Ilija Dukovski ,  Robert John Stephenson ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Robert J. Mears ,  Xiangyang Huang ,  Marek Hytha

IPC分类号： H01L29/06

CPC分类号： H01L29/155 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/28194 ,  H01L21/28255 ,  H01L29/1079 ,  H01L29/1083 ,  H01L29/152 ,  H01L29/51 ,  H01L29/513 ,  H01L29/78

摘要： A semiconductor device may include a first monocrystalline layer comprising a first material having a first lattice constant. A second monocrystalline layer may include a second material having a second lattice constant different than the first lattice constant. The device may also include a lattice matching layer between the first and second monocrystalline layers and comprising a superlattice. The superlattice may include a plurality of groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a semiconductor base portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween.

摘要翻译： 半导体器件可以包括包含具有第一晶格常数的第一材料的第一单晶层。 第二单晶层可以包括具有不同于第一晶格常数的第二晶格常数的第二材料。 该器件还可以包括第一和第二单晶层之间的晶格匹配层并且包括超晶格。 超晶格可以包括多组层，并且每组层可以包括多个层叠的半导体单层，其限定半导体基底部分和至少一个非半导体单层。 至少一个非半导体单层可以被约束在相邻的基底半导体部分的晶格内，并且来自相对的基极半导体部分的至少一些半导体原子可以通过其间的至少一个非半导体单层化学地结合在一起。

公开(公告)号：US07700447B2

公开(公告)日：2010-04-20

申请号：US11677099

申请日：2007-02-21

申请人： Ilija Dukovski ,  Robert John Stephenson ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Robert J. Mears ,  Xiangyang Huang ,  Marek Hytha

发明人： Ilija Dukovski ,  Robert John Stephenson ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Robert J. Mears ,  Xiangyang Huang ,  Marek Hytha

IPC分类号： H01L21/336

CPC分类号： H01L29/155 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/28194 ,  H01L21/28255 ,  H01L29/1079 ,  H01L29/1083 ,  H01L29/152 ,  H01L29/51 ,  H01L29/513 ,  H01L29/78

摘要： A method for making a semiconductor device which may include forming a first monocrystalline layer comprising a first material having a first lattice constant, a second monocrystalline layer including a second material having a second lattice constant different than the first lattice constant, and a lattice matching layer between the first and second monocrystalline layers and comprising a superlattice. More particularly, the superlattice may include a plurality of groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a semiconductor base portion and at least one non-semiconductor monolayer thereon. Furthermore, the at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween.

摘要翻译： 一种制造半导体器件的方法，其可以包括形成包括具有第一晶格常数的第一材料的第一单晶层，包括具有不同于第一晶格常数的第二晶格常数的第二材料的第二单晶层和晶格匹配层 在第一和第二单晶层之间并且包括超晶格。 更具体地，超晶格可以包括多组层，并且每组层可以包括限定半导体基底部分和至少一个非半导体单层的多个堆叠的半导体单层。 此外，至少一个非半导体单层可以被约束在相邻的基底半导体部分的晶格内，并且来自相对的基极半导体部分的至少一些半导体原子可以通过其间的至少一个非半导体单层化学地结合在一起。

公开(公告)号：US20110193063A1

公开(公告)日：2011-08-11

申请号：US13017863

申请日：2011-01-31

申请人： Robert J. Mears ,  Robert John Stephenson ,  Marek Hytha ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Xiangyang Huang

发明人： Robert J. Mears ,  Robert John Stephenson ,  Marek Hytha ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Xiangyang Huang

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L29/15 ,  H01L31/076 ,  H01L33/06 ,  H01L33/08 ,  H01L33/28 ,  H01S5/3072 ,  Y02E10/548

摘要： A multiple-wavelength opto-electronic device may include a substrate and a plurality of active optical devices carried by the substrate and operating at different respective wavelengths. Each optical device may include a superlattice comprising a plurality of stacked groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon.

摘要翻译： 多波长光电器件可以包括衬底和由衬底承载并在不同的相应波长下操作的多个有源光学器件。 每个光学器件可以包括超晶格，其包括多个堆叠的层组，并且每组层可以包括限定基极半导体部分和其上的至少一个非半导体单层的多个堆叠的半导体单层。

公开(公告)号：US07863066B2

公开(公告)日：2011-01-04

申请号：US11675846

申请日：2007-02-16

申请人： Robert J. Mears ,  Robert John Stephenson ,  Marek Hytha ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Xiangyang Huang

发明人： Robert J. Mears ,  Robert John Stephenson ,  Marek Hytha ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Xiangyang Huang

IPC分类号： H01L21/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/0725 ,  H01L31/18 ,  H01L31/1884 ,  H01L33/06 ,  Y02E10/50

摘要： A method for making a multiple-wavelength opto-electronic device which may include providing a substrates and forming a plurality of active optical devices to be carried by the substrate and operating at different respective wavelengths. Moreover, each optical device may include a superlattice comprising a plurality of stacked groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon.

摘要翻译： 一种制造多波长光电子器件的方法，其可以包括提供衬底并形成要由衬底承载并在不同的相应波长下操作的多个有源光学器件。 此外，每个光学器件可以包括超晶格，其包括多个堆叠的层组，并且每组层可以包括限定基极半导体部分和至少一个非半导体单层的多个堆叠的半导体单层。

公开(公告)号：US07880161B2

公开(公告)日：2011-02-01

申请号：US11675833

申请日：2007-02-16

申请人： Robert J. Mears ,  Robert John Stephenson ,  Marek Hytha ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Xiangyang Huang

发明人： Robert J. Mears ,  Robert John Stephenson ,  Marek Hytha ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Xiangyang Huang

IPC分类号： H01L29/06

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L29/15 ,  H01L31/076 ,  H01L33/06 ,  H01L33/08 ,  H01L33/28 ,  H01S5/3072 ,  Y02E10/548

摘要： A multiple-wavelength opto-electronic device may include a substrate and a plurality of active optical devices carried by the substrate and operating at different respective wavelengths. Each optical device may include a superlattice comprising a plurality of stacked groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon.

摘要翻译： 多波长光电器件可以包括衬底和由衬底承载并在不同的相应波长下操作的多个有源光学器件。 每个光学器件可以包括超晶格，其包括多个堆叠的层组，并且每组层可以包括限定基极半导体部分和其上的至少一个非半导体单层的多个堆叠的半导体单层。

公开(公告)号：US20100270535A1

公开(公告)日：2010-10-28

申请号：US12782211

申请日：2010-05-18

申请人： Samed Halilov ,  Xiangyang Huang ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Robert J. Mears ,  Marek Hytha ,  Robert John Stephenson

发明人： Samed Halilov ,  Xiangyang Huang ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Robert J. Mears ,  Marek Hytha ,  Robert John Stephenson

IPC分类号： H01L27/115 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L29/152 ,  B82Y10/00 ,  G01J5/34 ,  H01L28/55 ,  H01L29/151 ,  H01L29/40111 ,  H01L29/40117 ,  H01L29/516 ,  H01L29/78391 ,  H01L29/7881 ,  H01L37/025 ,  H01L41/183 ,  H03H9/02543

摘要： A method for making an electronic device may include forming a selectively polable superlattice comprising a plurality of stacked groups of layers. Each group of layers of the selectively polable superlattice may include a plurality of stacked semiconductor monolayers defining a semiconductor base portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent silicon portions, and at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween. The method may further include coupling at least one electrode to the selectively polable superlattice for selective poling thereof.

摘要翻译： 制造电子器件的方法可以包括形成包括多个堆叠层组的选择性可覆盖的超晶格。 选择性可定向超晶格的每组层可以包括限定半导体基底部分和其上的至少一个非半导体单层的多个堆叠的半导体单层。 至少一个非半导体单层可以被约束在相邻硅部分的晶格内，并且来自相对的基极半导体部分的至少一些半导体原子可以通过其间的至少一个非半导体单层化学地结合在一起。 所述方法还可以包括将至少一个电极耦合到所述选择性可触发的超晶格以用于其选择性极化。

公开(公告)号：US07517702B2

公开(公告)日：2009-04-14

申请号：US11614513

申请日：2006-12-21

申请人： Samed Halilov ,  Xiangyang Huang ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Robert J. Mears ,  Marek Hytha ,  Robert John Stephenson

发明人： Samed Halilov ,  Xiangyang Huang ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Robert J. Mears ,  Marek Hytha ,  Robert John Stephenson

IPC分类号： H01L21/00

CPC分类号： B82Y10/00 ,  H01L21/28291 ,  H01L29/151 ,  H01L29/78391 ,  H01L41/183 ,  H01L41/314

摘要： A method for making an electronic device may include forming a poled superlattice comprising a plurality of stacked groups of layers and having a net electrical dipole moment. Each group of layers of the poled superlattice may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween. The method may further include coupling at least one electrode to the poled superlattice.

摘要翻译： 制造电子设备的方法可以包括形成包括多个堆叠的层组并且具有净电偶极矩的极化超晶格。 极化超晶格的每组层可以包括限定基极半导体部分和其上的至少一个非半导体单层的多个堆叠的半导体单层。 至少一个非半导体单层可以被约束在相邻的基底半导体部分的晶格内，并且来自相对的基极半导体部分的至少一些半导体原子可以通过其间的至少一个非半导体单层化学地结合在一起。 该方法还可以包括将至少一个电极耦合到极化的超晶格。

公开(公告)号：US07446002B2

公开(公告)日：2008-11-04

申请号：US11136747

申请日：2005-05-25

申请人： Robert J. Mears ,  Marek Hytha ,  Scott A. Kreps ,  Robert John Stephenson ,  Jean Augustin Chan Sow Fook Yiptong ,  Ilija Dukovski ,  Kalipatnam Vivek Rao ,  Samed Halilov ,  Xiangyang Huang

发明人： Robert J. Mears ,  Marek Hytha ,  Scott A. Kreps ,  Robert John Stephenson ,  Jean Augustin Chan Sow Fook Yiptong ,  Ilija Dukovski ,  Kalipatnam Vivek Rao ,  Samed Halilov ,  Xiangyang Huang

IPC分类号： H01L21/336

CPC分类号： B82Y10/00 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/152 ,  H01L29/155 ,  H01L29/513 ,  H01L29/7833

摘要： A method for making a semiconductor device may include forming a superlattice comprising a plurality of stacked groups of layers adjacent a substrate. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming a high-K dielectric layer on the electrode layer, and forming an electrode layer on the high-K dielectric layer and opposite the superlattice.

摘要翻译： 制造半导体器件的方法可以包括形成包含与衬底相邻的多个堆叠层组的超晶格。 超晶格的每组层可以包括限定基极半导体部分的多个层叠的基底半导体单层和限制在相邻的基极半导体部分的晶格内的至少一个非半导体单层。 该方法还可以包括在电极层上形成高K电介质层，并在高K电介质层上形成与超晶格相对的电极层。

公开(公告)号：US20080197340A1

公开(公告)日：2008-08-21

申请号：US11675833

申请日：2007-02-16

申请人： Robert J. Mears ,  Robert John Stephenson ,  Marek Hytha ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Xiangyang Huang

发明人： Robert J. Mears ,  Robert John Stephenson ,  Marek Hytha ,  Ilija Dukovski ,  Jean Augustin Chan Sow Fook Yiptong ,  Samed Halilov ,  Xiangyang Huang

IPC分类号： H01L31/00 ,  H01L33/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L29/15 ,  H01L31/076 ,  H01L33/06 ,  H01L33/08 ,  H01L33/28 ,  H01S5/3072 ,  Y02E10/548

摘要： A multiple-wavelength opto-electronic device may include a substrate and a plurality of active optical devices carried by the substrate and operating at different respective wavelengths. Each optical device may include a superlattice comprising a plurality of stacked groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon.

摘要翻译： 多波长光电器件可以包括衬底和由衬底承载并在不同的相应波长下操作的多个有源光学器件。 每个光学器件可以包括超晶格，其包括多个堆叠的层组，并且每组层可以包括限定基极半导体部分和其上的至少一个非半导体单层的多个堆叠的半导体单层。