公开(公告)号：US10804460B2

公开(公告)日：2020-10-13

申请号：US16097801

申请日：2016-07-01

申请人： MD Tofizur Rahman ,  Christopher J. Wiegand ,  Brian Maertz ,  Daniel G. Ouellette ,  Kaan Oguz ,  Brian S. Doyle ,  Mark L. Doczy ,  Daniel B. Bergstrom ,  Justin S. Brockman ,  Oleg Golonzka ,  Tahir Ghani ,  Intel Corporation

发明人： MD Tofizur Rahman ,  Christopher J. Wiegand ,  Brian Maertz ,  Daniel G. Ouellette ,  Kevin P. O'Brien ,  Kaan Oguz ,  Brian S. Doyle ,  Mark L. Doczy ,  Daniel B. Bergstrom ,  Justin S. Brockman ,  Oleg Golonzka ,  Tahir Ghani

IPC分类号： H01L29/82 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02

摘要： Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.

公开(公告)号：US10559744B2

公开(公告)日：2020-02-11

申请号：US16072301

申请日：2016-04-01

申请人： Intel Corporation

发明人： Brian Maertz ,  Christopher J. Wiegand ,  Daniel G. Oeullette ,  Md Tofizur Rahman ,  Oleg Golonzka ,  Justin S. Brockman ,  Tahir Ghani ,  Brian S. Doyle ,  Kevin P. O'Brien ,  Mark L. Doczy ,  Kaan Oguz

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

摘要： An apparatus including an array of memory cells arranged in a grid defined by word lines and bit lines in a generally orthogonal orientation relative to one another, a memory cell including a resistive memory component and an access transistor, wherein the access transistor includes a diffusion region disposed at an acute angle relative to an associated word line. A method including etching a substrate to form a plurality of fins each including a body having a length dimension including a plurality of first junction regions and a plurality of second junction regions that are generally parallel to one another and offset by angled channel regions displacing in the length dimension an end of a first junction region from the beginning of a second junction region; removing the spacer material; and introducing a gate electrode on the channel region of each of the plurality of fins.

公开(公告)号：US20180287050A1

公开(公告)日：2018-10-04

申请号：US15755488

申请日：2015-09-25

申请人： Intel Corporation

发明人： Prashanth P. Madras ,  MD Tofizur Rahman ,  Christopher J. Wiegand ,  Brian Maertz ,  Oleg Golonzka ,  Kevin P. O'Brien ,  Mark L. Doczy ,  Brian S. Doyle ,  Tahir Ghani ,  Kaan Oguz

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01F10/32 ,  G11C11/16 ,  H01L27/22

摘要： MTJ material stacks with a laterally strained free magnetic layer, STTM devices employing such stacks, and computing platforms employing such STTM devices. In some embodiments, perpendicular pMTJ material stacks included free magnetic layers that are compressively strained laterally by a surrounding material, which increases coercive field strength for a more stable device. In some embodiments, a pMTJ material stack is encased in a compressive-stressed material. In some further embodiments, a pMTJ material stack is encased first in a dielectric shell, permitting a conductive material to be deposited over the shell as the compressive-stressed, strain-inducing material layer.

公开(公告)号：US20190221734A1

公开(公告)日：2019-07-18

申请号：US16327603

申请日：2016-09-30

申请人： INTEL CORPORATION

发明人： Kaan Oguz ,  Kevin P. O'Brien ,  Brian S. Doyle ,  Mark L. Doczy ,  Charles C. Kuo ,  Daniel G. Ouellette ,  Christopher J. Wiegand ,  MD Tofizur Rahman ,  Brian Maertz

IPC分类号： H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

摘要： Systems, apparatus, and methods for magnetoresitive memory are described. An apparatus for magnetoresitive memory includes a fixed layer, a free layer, and a tunneling barrier between the fixed layer and the free layer. The free layer is a new alloy consisting of a composition of Cobalt (Co), Iron (Fe), and Boron (B) intermixed with a non-magnetic metal according to a ratio. A thin insert layer of CoFeB may optionally be added between the alloy and the tunneling barrier.

公开(公告)号：US11031545B2

公开(公告)日：2021-06-08

申请号：US16327603

申请日：2016-09-30

申请人： INTEL CORPORATION

发明人： Kaan Oguz ,  Kevin P. O'Brien ,  Brian S. Doyle ,  Mark L. Doczy ,  Charles C. Kuo ,  Daniel G. Ouellette ,  Christopher J. Wiegand ,  Md Tofizur Rahman ,  Brian Maertz

IPC分类号： H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： Systems, apparatus, and methods for magnetoresitive memory are described. An apparatus for magnetoresitive memory includes a fixed layer, a free layer, and a tunneling barrier between the fixed layer and the free layer. The free layer is a new alloy consisting of a composition of Cobalt (Co), Iron (Fe), and Boron (B) intermixed with a non-magnetic metal according to a ratio. A thin insert layer of CoFeB may optionally be added between the alloy and the tunneling barrier.

公开(公告)号：US10770651B2

公开(公告)日：2020-09-08

申请号：US16463326

申请日：2016-12-30

申请人： Intel Corporation

发明人： MD Tofizur Rahman ,  Christopher J. Wiegand ,  Kaan Oguz ,  Daniel G. Ouellette ,  Brian Maertz ,  Kevin P. O'Brien ,  Mark L. Doczy ,  Brian S. Doyle ,  Oleg Golonzka ,  Tahir Ghani

IPC分类号： H01L27/22 ,  H01L43/02 ,  H01F10/32 ,  H01L43/10 ,  H01L43/12 ,  H01L43/00

摘要： A material layer stack for a pSTTM device includes a fixed magnetic layer, a tunnel barrier disposed above the fixed magnetic layer and a free layer disposed on the tunnel barrier. The free layer further includes a stack of bilayers where an uppermost bilayer is capped by a magnetic layer including iron and where each of the bilayers in the free layer includes a non-magnetic layer such as Tungsten, Molybdenum disposed on the magnetic layer. In an embodiment, the non-magnetic layers have a combined thickness that is less than 15% of a combined thickness of the magnetic layers in the stack of bilayers. A stack of bilayers including non-magnetic layers in the free layer can reduce the saturation magnetization of the material layer stack for the pSTTM device and subsequently increase the perpendicular magnetic anisotropy.