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公开(公告)号：US10804460B2
公开(公告)日：2020-10-13
申请号：US16097801
申请日：2016-07-01
申请人： MD Tofizur Rahman , Christopher J. Wiegand , Brian Maertz , Daniel G. Ouellette , Kaan Oguz , Brian S. Doyle , Mark L. Doczy , Daniel B. Bergstrom , Justin S. Brockman , Oleg Golonzka , Tahir Ghani , Intel Corporation
发明人： MD Tofizur Rahman , Christopher J. Wiegand , Brian Maertz , Daniel G. Ouellette , Kevin P. O'Brien , Kaan Oguz , Brian S. Doyle , Mark L. Doczy , Daniel B. Bergstrom , Justin S. Brockman , Oleg Golonzka , Tahir Ghani
摘要： Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.
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公开(公告)号：US20180151423A1
公开(公告)日：2018-05-31
申请号：US15570857
申请日：2015-06-03
申请人： Christopher J. Jezewski , Srijit Mukherjee , Daniel B. Bergstrom , Tejaswi K. Indukuri , Flavio Griggio , Ramanan V. Chebiam , James S. Clarke
发明人： Christopher J. Jezewski , Srijit Mukherjee , Daniel B. Bergstrom , Tejaswi K. Indukuri , Flavio Griggio , Ramanan V. Chebiam , James S. Clarke
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L21/76846 , H01L21/76843 , H01L23/5226 , H01L23/53209 , H01L23/53252 , H01L23/53266
摘要： In one embodiment, a conductive connector for a microelectronic component may be formed with a noble metal layer, acting as an adhesion/wetting layer, disposed between a barrier liner and a conductive fill material. In a further embodiment, the conductive connector may have a noble metal conductive fill material disposed directly on the barrier liner. The use of a noble metal as an adhesion/wetting layer or as a conductive fill material may improve gapfill and adhesion, which may result in the conductive connector being substantially free of voids, thereby improving the electrical performance of the conductive connector relative to conductive connectors without a noble metal as the adhesion/wetting layer or the conductive fill material.
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公开(公告)号：US09177867B2
公开(公告)日：2015-11-03
申请号：US13993330
申请日：2011-09-30
IPC分类号： H01L21/283 , H01L21/8238 , H01L29/66 , H01L29/78 , H01L29/49 , H01L29/51 , H01L21/768
CPC分类号： H01L21/823828 , H01L21/76897 , H01L21/823857 , H01L29/41791 , H01L29/495 , H01L29/51 , H01L29/66545 , H01L29/66795 , H01L29/785 , H01L2029/7858
摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
摘要翻译： 本说明书涉及制造具有非平面晶体管的微电子器件的领域。 本说明书的实施例涉及在非平面NMOS晶体管内形成栅极，其中可将NMOS功能材料（例如铝，钛和碳的组成）与含钛栅极填充物结合使用 以便于在形成非平面NMOS晶体管栅极的栅电极时使用含钨导电材料。
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4.发明申请公开(公告)号：US20150176119A1
公开(公告)日：2015-06-25
申请号：US14134087
申请日：2013-12-19
IPC分类号： C23C16/06
CPC分类号： C23C16/18
摘要： Methods of forming cobalt films utilizing a cobalt precursor comprising an additive are described. Those methods may include adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule that is coupled with a deposition tool, and then forming a cobalt film using the cobalt precursor comprising the additive. Non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule.
摘要翻译： 描述了使用包含添加剂的钴前体形成钴膜的方法。 这些方法可以包括将添加剂添加到钴前体中，其中钴前体位于与沉积工具耦合的安瓿中，然后使用包含添加剂的钴前体形成钴膜。 钴前体的非挥发性分解产物溶解在安瓿中。
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5.发明申请COMPRESSION COUPLING FOR PIPES SUBJECTED TO TENSION LOADS AND ASSOCIATED METHODS 审中-公开用于受拉伸载荷和相关方法的管道的压缩耦合公开(公告)号：US20130161021A1
公开(公告)日：2013-06-27
申请号：US13336285
申请日：2011-12-23
申请人： Stephen J. Makosey , Daniel B. Bergstrom , K. Rao Vemuri , Stephen M. Wallace , Donald W. Millard
发明人： Stephen J. Makosey , Daniel B. Bergstrom , K. Rao Vemuri , Stephen M. Wallace , Donald W. Millard
IPC分类号： E21B17/01 , B23P11/00 , F16L19/065
CPC分类号： E21B17/01 , E21B17/085 , Y10T29/49947
摘要： A riser system for underwater oil and gas wells features subsections with flanges that may be fastened together. Riser pipes extend between the flanges, through apertures with tapered seats. The riser pipes may be may from aluminum to reduce the weight of the riser system and may be a composite of two or more sections coupled together by compression fittings.
摘要翻译： 用于水下油气井的提升管系统具有可以紧固在一起的法兰的子段。 提升管在法兰之间延伸，通过具有锥形座的孔。 提升管可以是铝，以减小提升管系统的重量，并且可以是由压缩配件联接在一起的两个或多个部分的复合物。
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公开(公告)号：US20150041926A1
公开(公告)日：2015-02-12
申请号：US13993330
申请日：2011-09-30
IPC分类号： H01L21/8238 , H01L29/51 , H01L29/49
CPC分类号： H01L21/823828 , H01L21/76897 , H01L21/823857 , H01L29/41791 , H01L29/495 , H01L29/51 , H01L29/66545 , H01L29/66795 , H01L29/785 , H01L2029/7858
摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
摘要翻译： 本说明书涉及制造具有非平面晶体管的微电子器件的领域。 本说明书的实施例涉及在非平面NMOS晶体管内形成栅极，其中可将NMOS功能材料（例如铝，钛和碳的组成）与含钛栅极填充物结合使用 以便于在形成非平面NMOS晶体管栅极的栅电极时使用含钨导电材料。
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7.发明申请公开(公告)号：US20090148719A1
公开(公告)日：2009-06-11
申请号：US11952631
申请日：2007-12-07
CPC分类号： B23K20/126 , B23K20/122 , B23K2101/18 , B23K2103/10 , B23K2103/18 , Y10T428/12354
摘要： Friction-stir weldments and systems and methods for producing the same are disclosed. In one embodiment, a metal product includes a first metal plate having a first center-neutral axis, a second metal plate comprising a second center-neutral axis, and a friction-stir corner weld that connects the first metal plate to the second metal plate, where the first center-neutral axis of the first metal plate is transverse to the second center-neutral axis of the second metal plate. In another embodiment, a system for producing friction-stir weldments includes a backup anvil having a first supporting face and a second supporting face, where the first supporting face is adapted to receive and support the first metal plate, and where the second supporting face is adapted to receive and support a second metal plate, wherein the center-neutral axis of the first metal plate is transverse to the center-neutral axis of the second metal plate.
摘要翻译： 公开了摩擦搅拌焊件及其制造方法及其制造方法。 在一个实施例中，金属制品包括具有第一中心轴线的第一金属板，包括第二中心轴线的第二金属板和将第一金属板连接到第二金属板的摩擦搅拌拐角焊点 其中第一金属板的第一中心轴线横向于第二金属板的第二中心轴线。 在另一个实施例中，一种用于产生摩擦搅拌焊件的系统包括具有第一支撑面和第二支撑面的支撑砧座，其中第一支撑面适于接收和支撑第一金属板，并且其中第二支撑面是 适于接收和支撑第二金属板，其中第一金属板的中心轴线横向于第二金属板的中心轴线。
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8.发明授权Apparatus for resisting rotation of can ends in a downstacker and method regarding same 失效用于在筒仓中抵抗罐端部的旋转的装置及其方法公开(公告)号：US06887030B2
公开(公告)日：2005-05-03
申请号：US10212328
申请日：2002-08-06
CPC分类号： B65G59/067
摘要： An apparatus for resisting rotational movement of can ends in a downstacker is provided, that includes a housing having a bore, a ring having a bore that is disposed within the housing, a second ring having a bore that is disposed within the housing and a sleeve having a bore that is disposed within the housing wherein the bores of the ring, the second ring and the sleeve are in substantial alignment relative to each other. A method of resisting the rotational movement of can ends in a downstacker is also provided.
摘要翻译： 提供了一种用于抵抗罐头端部在降压器中的旋转运动的装置，其包括具有孔的壳体，具有设置在壳体内的孔的环，具有设置在壳体内的孔的第二环， 具有设置在壳体内的孔，其中环的孔，第二环和套筒相对于彼此大致对准。 还提供了一种抵抗罐底端部的旋转运动的方法。
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公开(公告)号：US10020375B2
公开(公告)日：2018-07-10
申请号：US15726609
申请日：2017-10-06
申请人： Intel Corporation
IPC分类号： H01L29/49 , C23C14/06 , H01L21/28 , H01L21/8238 , H01L29/66 , H01L27/092 , H01L29/40 , H01L29/417 , H01L23/522 , H01L29/78
CPC分类号： H01L29/4966 , C22C30/00 , C23C14/0635 , C23C14/0652 , H01L21/28088 , H01L21/823821 , H01L21/823842 , H01L23/5226 , H01L27/0924 , H01L29/0653 , H01L29/401 , H01L29/41775 , H01L29/41791 , H01L29/456 , H01L29/517 , H01L29/66795 , H01L29/785
摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
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公开(公告)号：US20160035724A1
公开(公告)日：2016-02-04
申请号：US14860336
申请日：2015-09-21
申请人： INTEL CORPORATION
IPC分类号： H01L27/088 , H01L29/51 , C22C30/00 , H01L29/06 , C22C14/00 , C22C21/00 , H01L29/45 , H01L29/49
CPC分类号： H01L29/4966 , C22C30/00 , C23C14/0635 , C23C14/0652 , H01L21/28088 , H01L21/823821 , H01L21/823842 , H01L23/5226 , H01L27/0924 , H01L29/0653 , H01L29/401 , H01L29/41775 , H01L29/41791 , H01L29/456 , H01L29/517 , H01L29/66795 , H01L29/785
摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.
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