-
公开(公告)号：US10804460B2
公开(公告)日：2020-10-13
申请号：US16097801
申请日：2016-07-01
申请人： MD Tofizur Rahman , Christopher J. Wiegand , Brian Maertz , Daniel G. Ouellette , Kaan Oguz , Brian S. Doyle , Mark L. Doczy , Daniel B. Bergstrom , Justin S. Brockman , Oleg Golonzka , Tahir Ghani , Intel Corporation
发明人： MD Tofizur Rahman , Christopher J. Wiegand , Brian Maertz , Daniel G. Ouellette , Kevin P. O'Brien , Kaan Oguz , Brian S. Doyle , Mark L. Doczy , Daniel B. Bergstrom , Justin S. Brockman , Oleg Golonzka , Tahir Ghani
摘要： Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.
-
公开(公告)号：US12051698B2
公开(公告)日：2024-07-30
申请号：US17030350
申请日：2020-09-23
申请人： Intel Corporation
发明人： Daniel G. Ouellette , Daniel B. O'Brien , Jeffrey S. Leib , Orb Acton , Lukas Baumgartel , Dan S. Lavric , Dax M. Crum , Oleg Golonzka , Tahir Ghani
IPC分类号： H01L27/00 , H01L27/092 , H01L29/06 , H01L29/40 , H01L29/423 , H01L29/49 , H01L29/51 , H01L29/775
CPC分类号： H01L27/0924 , H01L29/0673 , H01L29/408 , H01L29/42392 , H01L29/4966 , H01L29/517 , H01L29/775
摘要： Gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric. The P-type conductive layer includes molybdenum and nitrogen. A second gate stack is over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric.
-
公开(公告)号：US20200006635A1
公开(公告)日：2020-01-02
申请号：US16024599
申请日：2018-06-29
申请人： Intel Corporation
发明人： Tofizur Rahman , Christopher J. Wiegand , Justin S. Brockman , Daniel G. Ouellette , Angeline K. Smith , Andrew Smith , Pedro A. Quintero , Juan G. Alzate-Vinasco , Oleg Golonzka
摘要： A memory device includes a perpendicular magnetic tunnel junction (pMTJ) stack, between a bottom electrode and a top electrode. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet structure on the tunnel barrier. The free magnet structure includes a first free magnet on the tunnel barrier and a second free magnet above the first free magnet, wherein at least a portion of the free magnet proximal to an interface with the free magnet includes a transition metal. The free magnet structure having a transition metal between the first and the second free magnets advantageously improves the switching efficiency of the MTJ, while maintaining a thermal stability of at least 50 kT.
-
公开(公告)号：US11031545B2
公开(公告)日：2021-06-08
申请号：US16327603
申请日：2016-09-30
申请人： INTEL CORPORATION
发明人： Kaan Oguz , Kevin P. O'Brien , Brian S. Doyle , Mark L. Doczy , Charles C. Kuo , Daniel G. Ouellette , Christopher J. Wiegand , Md Tofizur Rahman , Brian Maertz
摘要： Systems, apparatus, and methods for magnetoresitive memory are described. An apparatus for magnetoresitive memory includes a fixed layer, a free layer, and a tunneling barrier between the fixed layer and the free layer. The free layer is a new alloy consisting of a composition of Cobalt (Co), Iron (Fe), and Boron (B) intermixed with a non-magnetic metal according to a ratio. A thin insert layer of CoFeB may optionally be added between the alloy and the tunneling barrier.
-
公开(公告)号：US10770651B2
公开(公告)日：2020-09-08
申请号：US16463326
申请日：2016-12-30
申请人： Intel Corporation
发明人： MD Tofizur Rahman , Christopher J. Wiegand , Kaan Oguz , Daniel G. Ouellette , Brian Maertz , Kevin P. O'Brien , Mark L. Doczy , Brian S. Doyle , Oleg Golonzka , Tahir Ghani
摘要： A material layer stack for a pSTTM device includes a fixed magnetic layer, a tunnel barrier disposed above the fixed magnetic layer and a free layer disposed on the tunnel barrier. The free layer further includes a stack of bilayers where an uppermost bilayer is capped by a magnetic layer including iron and where each of the bilayers in the free layer includes a non-magnetic layer such as Tungsten, Molybdenum disposed on the magnetic layer. In an embodiment, the non-magnetic layers have a combined thickness that is less than 15% of a combined thickness of the magnetic layers in the stack of bilayers. A stack of bilayers including non-magnetic layers in the free layer can reduce the saturation magnetization of the material layer stack for the pSTTM device and subsequently increase the perpendicular magnetic anisotropy.
-
公开(公告)号：US11616192B2
公开(公告)日：2023-03-28
申请号：US16024599
申请日：2018-06-29
申请人： Intel Corporation
发明人： Tofizur Rahman , Christopher J. Wiegand , Justin S. Brockman , Daniel G. Ouellette , Angeline K. Smith , Andrew Smith , Pedro A. Quintero , Juan G. Alzate-Vinasco , Oleg Golonzka
摘要： A memory device includes a perpendicular magnetic tunnel junction (pMTJ) stack, between a bottom electrode and a top electrode. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet structure on the tunnel barrier. The free magnet structure includes a first free magnet on the tunnel barrier and a second free magnet above the first free magnet, wherein at least a portion of the free magnet proximal to an interface with the free magnet includes a transition metal. The free magnet structure having a transition metal between the first and the second free magnets advantageously improves the switching efficiency of the MTJ, while maintaining a thermal stability of at least 50 kT.
-
公开(公告)号：US11489112B2
公开(公告)日：2022-11-01
申请号：US16641582
申请日：2017-09-28
申请人： INTEL CORPORATION
发明人： Namrata S. Asuri , Oleg Golonzka , Nathan Strutt , Patrick J. Hentges , Trinh T. Van , Hiten Kothari , Ameya S. Chaudhari , Matthew J. Andrus , Timothy E. Glassman , Dragos Seghete , Christopher J. Wiegand , Daniel G. Ouellette
IPC分类号： H01L45/00 , H01L23/528 , H01L27/24
摘要： An apparatus, includes an interconnect, including a conductive material, above a substrate and a resistive random access memory (RRAM) device coupled to the interconnect. The RRAM device includes an electrode structure above the interconnect, where an upper portion of the electrode structure has a first width. The RRAM device further includes a switching layer on the electrode structure, where the switching layer has the first width and an oxygen exchange layer, having a second width less than the first width, on a portion of the switching layer. The RRAM device further includes a top electrode above the oxygen exchange layer, where the top electrode has the second width and an encapsulation layer on a portion of the switching layer, where the switching layer extends along a sidewall of the oxygen exchange layer.
-
公开(公告)号：US20190221734A1
公开(公告)日：2019-07-18
申请号：US16327603
申请日：2016-09-30
申请人： INTEL CORPORATION
发明人： Kaan Oguz , Kevin P. O'Brien , Brian S. Doyle , Mark L. Doczy , Charles C. Kuo , Daniel G. Ouellette , Christopher J. Wiegand , MD Tofizur Rahman , Brian Maertz
CPC分类号： H01L43/08 , H01L27/228 , H01L43/10 , H01L43/12
摘要： Systems, apparatus, and methods for magnetoresitive memory are described. An apparatus for magnetoresitive memory includes a fixed layer, a free layer, and a tunneling barrier between the fixed layer and the free layer. The free layer is a new alloy consisting of a composition of Cobalt (Co), Iron (Fe), and Boron (B) intermixed with a non-magnetic metal according to a ratio. A thin insert layer of CoFeB may optionally be added between the alloy and the tunneling barrier.
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.043 秒)
