公开(公告)号：US09984940B1

公开(公告)日：2018-05-29

申请号：US15418916

申请日：2017-01-30

申请人： International Business Machines Corporation ,  ULVAC, Inc.

发明人： Jack O. Chu ,  Stephen M. Gates ,  Masanobu Hatanaka ,  Vijay Narayanan ,  Deborah A. Neumayer ,  Yohei Ogawa ,  John Rozen

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/84 ,  H01L29/78 ,  H01L27/12 ,  H01L23/31 ,  H01L23/29

CPC分类号： H01L21/845 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28008 ,  H01L21/28158 ,  H01L21/28255 ,  H01L21/28264 ,  H01L23/298 ,  H01L23/3171 ,  H01L23/3192 ,  H01L27/1211 ,  H01L29/785

摘要： A scaled dielectric stack interlayer, compatible with subsequent high temperature processing with good electrical transport & reliability properties is provided. A method for forming a conformal aSi:H passivation layer on a semiconductor device is described. A patterned semiconductor wafer is placed in in a process chamber with a first layer formed thereon and a second layer formed thereon, the first layer and the second layer being two different materials Next, a SixH(2x+2) based deposition up to a temperature of 400 degrees Celsius is used on the first layer and the second layer thereby forming a conformal aSi:H passivating layer is formed at a higher rate of deposition on the first layer selectively and a lower rate of deposit on the second layer.

公开(公告)号：US11101219B2

公开(公告)日：2021-08-24

申请号：US16258041

申请日：2019-01-25

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John Bruley ,  Jack O. Chu ,  Kam-Leung Lee ,  Ahmet S. Ozcan ,  Paul M. Solomon ,  Jeng-bang Yau

IPC分类号： H01L21/768 ,  H01L23/535 ,  H01L23/532 ,  H01L29/78 ,  C22C30/00 ,  H01L23/485 ,  H01L21/285

摘要： A method of forming a contact to a semiconductor device is provided that forms an alloy composed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti) and a semiconductor material. The methods may include forming a nickel and platinum semiconductor alloy at a base of a via. A titanium layer having an angstrom scale thickness is deposited in the via in contact with the nickel platinum semiconductor alloy. An aluminum containing fill is deposited atop the titanium layer. A forming gas anneal including an oxygen containing atmosphere is applied to the structure to provide a contact alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element from the contact surface of the semiconductor device.

公开(公告)号：US20190067198A1

公开(公告)日：2019-02-28

申请号：US16168092

申请日：2018-10-23

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John Bruley ,  Jack O. Chu ,  Kam-Leung Lee ,  Ahmet S. Ozcan ,  Paul M. Solomon ,  Jeng-bang Yau

IPC分类号： H01L23/535 ,  H01L21/768 ,  C22C30/00 ,  H01L29/78 ,  H01L23/532

摘要： A method of forming a contact to a semiconductor device is provided that forms an alloy composed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti) and a semiconductor material. The methods may include forming a nickel and platinum semiconductor alloy at a base of a via. A titanium layer having an angstrom scale thickness is deposited in the via in contact with the nickel platinum semiconductor alloy. An aluminum containing fill is deposited atop the titanium layer. A forming gas anneal including an oxygen containing atmosphere is applied to the structure to provide a contact alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element from the contact surface of the semiconductor device.

公开(公告)号：US09177956B2

公开(公告)日：2015-11-03

申请号：US13956339

申请日：2013-07-31

申请人： International Business Machines Corporation

发明人： Szu-Lin Cheng ,  Jack O. Chu ,  Isaac Lauer ,  Jeng-Bang Yau

IPC分类号： H01L21/00 ,  H01L27/092 ,  H01L21/8238 ,  H01L27/12 ,  H01L21/84

CPC分类号： H01L27/1203 ,  H01L21/823814 ,  H01L21/823871 ,  H01L21/84 ,  H01L25/065 ,  H01L27/092 ,  H01L29/41783 ,  H01L2924/0002 ,  H01L2924/00

摘要： Field Effect Transistors (FETs), Integrated Circuit (IC) chips including the FETs, and a method of forming the FETs and IC. FET locations and adjacent source/drain regions are defined on a semiconductor wafer, e.g., a silicon on insulator (SOI) wafer. Source/drains are formed in source/drains regions. A stopping layer is formed on source/drains. Contact spacers are formed above gates. Source/drain contacts are formed to the stopping layer, e.g., after converting the stopping layer to silicide. The contact spacers separate source/drain contacts from each other.

摘要翻译： 场效应晶体管（FET），包括FET的集成电路（IC）芯片，以及形成FET和IC的方法。 FET位置和相邻源/漏区限定在半导体晶片上，例如绝缘体上硅（SOI）晶片上。 源/排水渠在源/排水区形成。 在源极/漏极上形成停止层。 在门上方形成接触垫片。 源极/漏极触点形成于停止层，例如，在将停止层转换成硅化物之后。 接触间隔件将源极/漏极触点彼此分开。

公开(公告)号：US20150236147A1

公开(公告)日：2015-08-20

申请号：US14181832

申请日：2014-02-17

申请人： International Business Machines Corporation

发明人： Jack O. Chu ,  Christos Dimitrakopoulos ,  Eric C. Harley ,  Judson R. Holt ,  Timothy J. McArdle ,  Matthew W. Stoker

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/324 ,  H01L29/66 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L29/785 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/02639 ,  H01L21/324 ,  H01L29/0649 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/66037 ,  H01L29/66795 ,  H01L29/7781

摘要： Silicon-carbon alloy structures can be formed as inverted U-shaped structures around semiconductor fins by a selective epitaxy process. A planarization dielectric layer is formed to fill gaps among the silicon-carbon alloy structures. After planarization, remaining vertical portions of the silicon-carbon alloy structures constitute silicon-carbon alloy fins, which can have sublithographic widths. The semiconductor fins may be replaced with replacement dielectric material fins. In one embodiment, employing a patterned mask layer, sidewalls of the silicon-carbon alloy fins can be removed around end portions of each silicon-carbon alloy fin. An anneal is performed to covert surface portions of the silicon-carbon alloy fins into graphene layers. In one embodiment, each graphene layer can include only a horizontal portion in a channel region, and include a horizontal portion and sidewall portions in source and drain regions. If a patterned mask layer is not employed, each graphene layer can include only a horizontal portion.

摘要翻译： 硅碳合金结构可以通过选择性外延工艺形成为围绕半导体翅片的倒U形结构。 形成平坦化介电层以填充硅 - 碳合金结构之间的间隙。 在平坦化之后，硅 - 碳合金结构的剩余垂直部分构成可以具有亚光刻宽度的硅碳合金翅片。 半导体翅片可以用替换的介质材料翅片代替。 在一个实施例中，采用图案化掩模层，可以在每个硅 - 碳合金散热片的端部周围除去硅 - 碳合金散热片的侧壁。 执行退火以将硅碳合金翅片的表面部分隐藏成石墨烯层。 在一个实施例中，每个石墨烯层可以仅包括沟道区域中的水平部分，并且在源极和漏极区域中包括水平部分和侧壁部分。 如果不使用图案化掩模层，则每个石墨烯层可以仅包括水平部分。

公开(公告)号：US20210343647A1

公开(公告)日：2021-11-04

申请号：US17374327

申请日：2021-07-13

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John Bruley ,  Jack O. Chu ,  Kam-Leung Lee ,  Ahmet S. Ozcan ,  Paul M. Solomon ,  Jeng-Bang Yau

IPC分类号： H01L23/535 ,  H01L23/532 ,  H01L29/78 ,  H01L21/768 ,  C22C30/00 ,  H01L23/485 ,  H01L21/285

摘要： A method of forming a contact to a semiconductor device is provided that forms an alloy composed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti) and a semiconductor material. The methods may include forming a nickel and platinum semiconductor alloy at a base of a via. A titanium layer having an angstrom scale thickness is deposited in the via in contact with the nickel platinum semiconductor alloy. An aluminum containing fill is deposited atop the titanium layer. A forming gas anneal including an oxygen containing atmosphere is applied to the structure to provide a contact alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element from the contact surface of the semiconductor device.

公开(公告)号：US08916451B2

公开(公告)日：2014-12-23

申请号：US13759724

申请日：2013-02-05

申请人： International Business Machines Corporation

发明人： Can Bayram ,  Jack O. Chu ,  Christos Dimitrakopoulos ,  Jeehwan Kim ,  Hongsik Park ,  Devendra K. Sadana

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/02002 ,  H01L21/02378 ,  H01L21/02444 ,  H01L21/02485 ,  H01L21/02529 ,  H01L21/0254 ,  H01L33/0079 ,  H01L33/32

摘要： A method for wafer transfer includes forming a spreading layer, including graphene, on a single crystalline SiC substrate. A semiconductor layer including one or more layers is formed on and is lattice matched to the crystalline SiC layer. The semiconductor layer is transferred to a handle substrate, and the spreading layer is split to remove the single crystalline SiC substrate.

摘要翻译： 用于晶片转印的方法包括在单晶SiC衬底上形成包括石墨烯的扩散层。 包含一层或多层的半导体层形成在晶体SiC层上并与之结晶化。 将半导体层转移到处理衬底，并且分散扩散层以除去单晶SiC衬底。

公开(公告)号：US08861728B2

公开(公告)日：2014-10-14

申请号：US13654078

申请日：2012-10-17

申请人： International Business Machines Corporation

发明人： Jack O. Chu ,  Gregory M. Fritz ,  Harold J. Hovel ,  Young-Hee Kim ,  Dirk Pfeiffer ,  Kenneth P. Rodbell

IPC分类号： H01L23/544 ,  H01L45/00 ,  H01L27/24 ,  H01L23/00

CPC分类号： H01L23/576 ,  G06F21/86 ,  H01L27/24 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure relates to integrated circuits having tamper detection and response devices and methods for manufacturing such integrated circuits. One integrated circuit having a tamper detection and response device includes at least one photovoltaic cell and at least one memory cell coupled to the at least one photovoltaic cell. When the at least one photovoltaic cell is exposed to radiation, the at least one photovoltaic cell generates a current that causes an alteration to a memory state of the at least one memory cell. Another integrated circuit having a tamper detection and response device includes at least one photovoltaic cell and a reactive material coupled to the at least one photovoltaic cell, wherein a current from the at least one photovoltaic cell triggers an exothermic reaction in the reactive material.

摘要翻译： 本公开涉及具有篡改检测和响应装置的集成电路以及用于制造这种集成电路的方法。 具有篡改检测和响应装置的一个集成电路包括至少一个光伏电池和耦合到该至少一个光伏电池的至少一个存储单元。 当所述至少一个光伏电池暴露于辐射时，所述至少一个光伏电池产生导致所述至少一个存储器单元的存储器状态改变的电流。 具有篡改检测和响应装置的另一集成电路包括至少一个光伏电池和耦合到所述至少一个光伏电池的反应材料，其中来自所述至少一个光伏电池的电流触发所述反应性材料中的放热反应。

公开(公告)号：US12062614B2

公开(公告)日：2024-08-13

申请号：US17374327

申请日：2021-07-13

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John Bruley ,  Jack O. Chu ,  Kam-Leung Lee ,  Ahmet S. Ozcan ,  Paul M. Solomon ,  Jeng-Bang Yau

IPC分类号： H01L23/535 ,  C22C30/00 ,  H01L21/285 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L29/78

CPC分类号： H01L23/535 ,  C22C30/00 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76895 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53266 ,  H01L29/7851 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53252

摘要： A method of forming a contact to a semiconductor device is provided that forms an alloy composed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti) and a semiconductor material. The methods may include forming a nickel and platinum semiconductor alloy at a base of a via. A titanium layer having an angstrom scale thickness is deposited in the via in contact with the nickel platinum semiconductor alloy. An aluminum containing fill is deposited atop the titanium layer. A forming gas anneal including an oxygen containing atmosphere is applied to the structure to provide a contact alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element from the contact surface of the semiconductor device.

公开(公告)号：US11862567B2

公开(公告)日：2024-01-02

申请号：US17196267

申请日：2021-03-09

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John Bruley ,  Jack O. Chu ,  Kam-Leung Lee ,  Ahmet S. Ozcan ,  Paul M. Solomon ,  Jeng-bang Yau

IPC分类号： H01L23/535 ,  H01L23/532 ,  H01L29/78 ,  H01L21/768 ,  C22C30/00 ,  H01L23/485 ,  H01L21/285

CPC分类号： H01L23/535 ,  C22C30/00 ,  H01L21/2855 ,  H01L21/28518 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76895 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53266 ,  H01L29/7851 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53252

摘要： A method of forming a contact to a semiconductor device is provided that forms an alloy composed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti) and a semiconductor material. The methods may include forming a nickel and platinum semiconductor alloy at a base of a via. A titanium layer having an angstrom scale thickness is deposited in the via in contact with the nickel platinum semiconductor alloy. An aluminum containing fill is deposited atop the titanium layer. A forming gas anneal including an oxygen containing atmosphere is applied to the structure to provide a contact alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element from the contact surface of the semiconductor device.