公开(公告)号：US5356515A

公开(公告)日：1994-10-18

申请号：US988809

申请日：1992-12-10

申请人： Yoshifumi Tahara ,  Yoshihisa Hirano ,  Masahiro Ogasawara ,  Isahiro Hasegawa ,  Keiji Horioka ,  Takaya Matsushita

发明人： Yoshifumi Tahara ,  Yoshihisa Hirano ,  Masahiro Ogasawara ,  Isahiro Hasegawa ,  Keiji Horioka ,  Takaya Matsushita

IPC分类号： H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116

摘要： A dry etching method which includes supplying a workpiece having an oxide portion or a nitride portion into a processing vessel, keeping said workpiece at temperatures not higher than 0.degree. C. within said processing vessel, supplying an etching gas including a first gas containing a halogen element and a second gas containing carbon having an oxidation number of less than 4 and oxygen to a region in the vicinity of the workpiece while keeping the temperature the workpiece at a level not higher than 0.degree. C., and forming a plasma of said etching gas for etching the oxide portion or the nitride portion of the workpiece with said plasma.

摘要翻译： 一种干蚀刻方法，其包括将具有氧化物部分或氮化物部分的工件供应到处理容器中，将所述工件保持在所述处理容器内不高于0℃的温度，提供包括含有卤素的第一气体的蚀刻气体 元素和含有氧化数小于4的碳的第二气体和氧气到工件附近的区域，同时将工件的温度保持在不高于0℃的水平，并形成所述蚀刻的等离子体 用于利用所述等离子体蚀刻工件的氧化物部分或氮化物部分的气体。

公开(公告)号：US5717294A

公开(公告)日：1998-02-10

申请号：US395503

申请日：1995-02-27

申请人： Itsuko Sakai ,  Makoto Sekine ,  Keiji Horioka ,  Yukimasa Yoshida ,  Koichiro Inazawa ,  Masahiro Ogasawara ,  Yoshio Ishikawa ,  Kazuo Eguchi

发明人： Itsuko Sakai ,  Makoto Sekine ,  Keiji Horioka ,  Yukimasa Yoshida ,  Koichiro Inazawa ,  Masahiro Ogasawara ,  Yoshio Ishikawa ,  Kazuo Eguchi

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23K10/00 ,  H05H1/16

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A vacuum chamber contains a first electrode for supporting a wafer, and a second electrode opposing the first electrode. A supply system and an exhaustion system are connected to the vacuum chamber. The system supplies a reactive gas into the chamber, and the system exhaust the used gas from the chamber. A radio-frequency power supply is connected to the first electrode, for supplying power between the electrodes to generate an electric field E. An annular magnet assembly is provided around the chamber, for generating a magnetic field B which has a central plane intersecting with the electric field E. The magnet assembly has a plurality of magnet elements which have different magnetization axes in the central plane of the magnetic field. Electrons drift due to a force resulting from an outer product (E.times.B) of the electric field E and the magnetic field B. The central plane of the magnetic field B is shifted upwards from the target surface of the wafer, such that the magnetic force lines of the magnetic field intersect with the target surface of the substrate.

摘要翻译： 真空室包含用于支撑晶片的第一电极和与第一电极相对的第二电极。 供应系统和耗尽系统连接到真空室。 该系统将反应性气体供应到室中，并且系统从室中排出废气。 射频电源连接到第一电极，用于在电极之间提供电力以产生电场E.环形磁体组件设置在室周围，用于产生磁场B，磁场B具有与中心平面相交的中心平面 电场E.磁体组件具有在磁场的中心平面中具有不同磁化轴的多个磁体元件。 电子由于电场E的外部产物（ExB）和磁场B产生的力而漂移。磁场B的中心平面从晶片的目标表面向上移动，使得磁力线 的磁场与基板的目标表面相交。

公开(公告)号：US5449977A

公开(公告)日：1995-09-12

申请号：US326360

申请日：1994-10-20

申请人： Satoshi Nakagawa ,  Yoshifumi Tahara ,  Masahiro Ogasawara

发明人： Satoshi Nakagawa ,  Yoshifumi Tahara ,  Masahiro Ogasawara

IPC分类号： H01J37/32 ,  H01J37/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/3266 ,  H01J2237/0044

摘要： Under a reduced pressure, an RF electric field is applied at a right angle to a main face of an article-to-be-treated such as a semiconductor, wafer placed on a cathode in treatment chamber. At the same time, a magnetic field is applied thereto by a magnetic field applying device to generate a plasma by a magnetron discharge. The magnetic field is formed in such a fashion that adjacent magnetic lines of flux are not in parallel with one another on the main face of the article-to-be-treated. Charged particles in the plasma drift in a diverging direction with Lorenz force so as to prevent electrification of the article-to-be-treated.

摘要翻译： 在减压下，将RF电场以直角施加到被处理物体的主面，例如放置在处理室中的阴极上的半导体，晶片。 同时，通过磁场施加装置向其施加磁场，以通过磁控管放电产生等离子体。 磁场以这样的方式形成，使得相邻的磁通线在被处理物体的主面上彼此不平行。 等离子体中的带电粒子以Lorenz力沿发散方向漂移，以防止被处理物品的通电。

公开(公告)号：US5494522A

公开(公告)日：1996-02-27

申请号：US214282

申请日：1994-03-17

申请人： Shuji Moriya ,  Masahiro Ogasawara ,  Jun Yashiro ,  Yoshifumi Tahara ,  Satoru Kawakami ,  Susumu Tanaka

发明人： Shuji Moriya ,  Masahiro Ogasawara ,  Jun Yashiro ,  Yoshifumi Tahara ,  Satoru Kawakami ,  Susumu Tanaka

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/45568 ,  C23C16/4401 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32706 ,  H01J2237/022 ,  H01J2237/184

摘要： A plasma process system for producing gas plasma in an air-tight chamber by high frequency power to process a substrate with the gas plasma comprising a lower electrode on which the substrate to be plasma-processed is mounted, an upper electrode arranged above the lower electrode, a plasma generator circuit for generating plasma between the upper and the lower electrode, a power source for supplying high frequency power to the plasma generator circuit, and bias generator for generating negative voltage in the upper or lower electrode when high frequency power is supplied from the power source to the upper or lower electrode, wherein the plasma generator circuit includes transformer for supplying a part of high frequency power, which is supplied from the power source, to the bias generator.

摘要翻译： 一种用于通过高频功率在气密室中产生气体等离子体的等离子体处理系统，其中包括安装有待等离子体处理的衬底的下电极的气体等离子体处理衬底;布置在下电极上方的上电极 用于在上下电极之间产生等离子体的等离子体发生器电路，用于向等离子体发生器电路提供高频电力的电源，以及当从高电源供应高频电力时在上电极或下电极产生负电压的偏置发生器 电源到上电极或下电极，其中等离子体发生器电路包括用于将从电源提供的一部分高频电力提供给偏置发生器的变压器。

公开(公告)号：US5411624A

公开(公告)日：1995-05-02

申请号：US173473

申请日：1993-12-27

申请人： Yoshihisa Hirano ,  Yoshifumi Takara ,  Masahiro Ogasawara

发明人： Yoshihisa Hirano ,  Yoshifumi Takara ,  Masahiro Ogasawara

IPC分类号： H01J37/34 ,  H01L21/00

CPC分类号： H01J37/3411 ,  H01J37/3405 ,  H01J37/347

摘要： A magnetron plasma processing apparatus includes a reaction chamber for housing an object to be processed, an electric field generating device, provided in the reaction chamber and having a first electrode for placing the object to be processed thereon and a second electrode opposing the first electrode, for generating an electric field between the first and second electrodes, a magnetic field generating device for generating a magnetic field having a component perpendicular to the electric field, and a device for supplying a reaction gas into the reaction chamber to generate a magnetron plasma by functions of the electric field and the magnetic field. A ring for strengthening the component of the electric field perpendicular to the magnetic field and for increasing the plasma generated at the peripheral portion of the object to be processed is provided to surround the peripheral portion of the object to be processed.

摘要翻译： 磁控管等离子体处理装置包括用于容纳待处理物体的反应室，设置在反应室中的电场产生装置，具有用于放置待处理物体的第一电极和与第一电极相对的第二电极， 用于在第一和第二电极之间产生电场，用于产生具有垂直于电场的分量的磁场的磁场产生装置，以及用于将反应气体供应到反应室中以通过功能产生磁控管等离子体的装置 的电场和磁场。 设置用于加强与磁场垂直的电场的分量并增加在被处理物体的周边部分产生的等离子体的环，以包围被处理物体的周边部分。

公开(公告)号：US08609549B2

公开(公告)日：2013-12-17

申请号：US13045988

申请日：2011-03-11

申请人： Sungtae Lee ,  Masahiro Ogasawara ,  Junichi Sasaki ,  Naohito Yanagida

发明人： Sungtae Lee ,  Masahiro Ogasawara ,  Junichi Sasaki ,  Naohito Yanagida

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01J37/32091

摘要： A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.

摘要翻译： 提供了一种等离子体蚀刻方法，用于通过在非晶碳膜的图案作为最终掩模的非晶碳膜上形成的氧化硅膜或氮化硅膜上进行等离子体蚀刻，所述多层掩模包括具有 预定图案，在光致抗蚀剂层下形成的有机底部防反射涂层（BARC）膜，在BARC膜下面形成的SiON膜和形成在SiON膜下面的无定形碳膜。 在氧化硅膜或氮化硅膜的等离子体蚀刻开始时使用的初始掩模是在无定形碳膜上残留SiON膜的状态和无定形碳膜的膜厚比 残留SiON膜的膜厚小于或等于约14。

公开(公告)号：US07506610B2

公开(公告)日：2009-03-24

申请号：US11137516

申请日：2005-05-26

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32577 ,  H01J37/32082 ,  H01J37/32174 ,  H01L21/31116

摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

摘要翻译： 一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。 上电极被设置为面对放置在处理容器内的目标衬底。 电动给料器包括在环形方向上连续地连接到上电极的第一圆柱形导电构件。 电馈送器被配置为将第一RF电源的第一RF输出提供给上电极。

公开(公告)号：US07300881B2

公开(公告)日：2007-11-27

申请号：US10935103

申请日：2004-09-08

申请人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

发明人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32082 ,  H01L21/31116 ,  H01L21/31138

摘要： A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.

摘要翻译： 在具有图案的基板上进行等离子体蚀刻，其中形成在抗蚀剂掩模上的相邻开口之间的间隔等于或小于200nm，其中通过将包括活性物质产生气体的处理气体转化为包括 具有碳和氟的化合物，以及包含氙气进入等离子体的非反应性气体。 非反应性气体还包括氩气。

公开(公告)号：US20050126488A1

公开(公告)日：2005-06-16

申请号：US11047595

申请日：2005-02-02

申请人： Masahiro Ogasawara ,  Kazuya Kato

发明人： Masahiro Ogasawara ,  Kazuya Kato

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/00 ,  C23C16/509 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32834 ,  H01J37/3244 ,  H01L21/67069

摘要： A plasma processing apparatus having an evacuation ring with high plasma resistance and capable of minimizing abnormal discharge is provided. A processing chamber 100 includes a ceiling unit 110 at which an upper electrode 112 is provided and a container unit 120 having a lower electrode 122 provided to face opposite the upper electrode 112, on which a substrate can be placed. An evacuation ring 126 is provided around the lower electrode 122 so as to divide the space in the processing chamber 100 into a plasma processing space 102 and an evacuation space 104. At the evacuation ring 126, through holes 126a and blind holes 126b which are fewer than the through holes 126a and open toward the plasma processing space 102 are formed. An insulation coating constituted of Y2O3 is applied onto the surface of the evacuation ring 126 towards the plasma processing space 102.

摘要翻译： 提供了一种具有高等离子体电阻并能够使异常放电最小化的排气环的等离子体处理装置。 处理室100包括设置有上电极112的天花板单元110和具有设置成与上电极112相对设置的下电极122的容器单元120，可以放置基板。 在下电极122周围设置有排气环126，以将处理室100中的空间分成等离子体处理空间102和抽空空间104。 在排气环126处形成通孔126a和盲孔126b，盲孔126b比通孔126a少并且朝向等离子体处理空间102开口。 由排气环126的表面向等离子体处理空间102施加由Y 2 O 3 3构成的绝缘涂层。

公开(公告)号：US4558510A

公开(公告)日：1985-12-17

申请号：US592596

申请日：1984-03-23

申请人： Keizo Tani ,  Masahiro Ogasawara

发明人： Keizo Tani ,  Masahiro Ogasawara

IPC分类号： H01L21/56 ,  H01L23/24 ,  H01L23/28 ,  H05K7/00 ,  H05K5/06 ,  H01L23/30

CPC分类号： H01L21/56 ,  H01L23/24 ,  H05K7/005 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01039

摘要： There is provided a method of producing a semiconductor device comprising a protecting silicone gel layer which covers a semiconductor chip and bonding wires for taking electrodes out of this chip, and a resin layer which has a smaller thermal expansion coefficient than that of this silicone gel layer at least part of which contacts the silicone gel layer. This method comprises the steps of: thermally expanding the silicone gel layer until it reaches the product environmental guarantee temperature which comes before the cure acceleration reaction in the resin layer; and completely curing the resin layer while maintaining the volume of the silicone gel layer at the same time, thereby fixedly adhering it with the other parts.

摘要翻译： 提供一种制造半导体器件的方法，该半导体器件包括覆盖半导体芯片的保护硅凝胶层和用于从该芯片取出电极的接合线，以及具有比该硅凝胶层的热膨胀系数小的热膨胀系数的树脂层 其至少一部分接触硅凝胶层。 该方法包括以下步骤：将硅胶凝胶层热膨胀直到达到在树脂层中固化加速反应之前产生的环境保护温度; 并在同时保持硅凝胶层的体积的同时完全固化树脂层，从而将其与其它部分固定。