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37 条记录 (耗时 0.033 秒)

    Non-Oriented Electrical Steel Sheets with Excellent Magnetic Properties and Method for Manufacturing the Same
    1.
    发明申请
    Non-Oriented Electrical Steel Sheets with Excellent Magnetic Properties and Method for Manufacturing the Same 有权
    具有优异磁性的非取向电工钢板及其制造方法

    公开(公告)号：US20080121314A1

    公开(公告)日：2008-05-29

    申请号：US11792987

    申请日：2005-12-20

    申请人： Jae-Young Choi ,  Byung-Keun Bae ,  Jong-Tae Park ,  Jae-Kwan Kim ,  Chel-Min Park

    发明人： Jae-Young Choi ,  Byung-Keun Bae ,  Jong-Tae Park ,  Jae-Kwan Kim ,  Chel-Min Park

    IPC分类号： H01F1/01 ,  C21D8/02

    CPC分类号： C22C38/004 ,  C21D8/1205 ,  C21D8/1222 ,  C21D8/1233 ,  C21D8/1272 ,  C21D9/46 ,  C22C38/002 ,  C22C38/008 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/60 ,  H01F1/14791 ,  H01F1/16

    摘要： The present invention relates to technology for manufacturing electrical steel sheets having excellent magnetic properties through the control of a hot-rolled texture using the phase transformation of steel. More particularly, it relates to a non-oriented electrical steel sheet that has reduced iron loss and increased magnetic flux density by controlling alloy component elements and optimizing hot-rolling conditions, even though hot-rolled sheet annealing is not carried out, as well as a manufacturing method thereof. More specifically, the invention provides a non-oriented electrical steel sheet which has excellent magnetic properties while hot-rolled sheet annealing can be omitted, the steel sheet being comprised of 0.005 wt % or less of C, 1.0-3.0 w % of Si, 0.1-2.0 wt % of Mn, 0.1 wt % or less of P, 0.1-1.5 wt % of Al, and a remainder of Fe and other inevitable impurities, in which the relationship between the elements Mn and Al satisfies an equation of −0.2

    摘要翻译： 本发明涉及通过使用钢的相变控制热轧组织来制造具有优异磁性的电工钢板的技术。 更具体地，涉及一种无取向电工钢板，即使不进行热轧板退火，也可以通过控制合金成分元素并优化热轧条件而减少铁损和增加磁通密度，以及 其制造方法。 更具体地说，本发明提供一种磁性能优异的无取向电工钢板，可以省略热轧板退火，该钢板由C：0.005重量％以下，Si：1.0〜3.0重量％，Si： 0.1-2.0重量％的Mn，0.1重量％以下的P，0.1〜1.5重量％的Al，剩余的Fe和其他不可避免的杂质，元素Mn和Al之间的关系满足公式-0.2

    Non-oriented electrical steel sheets with excellent magnetic properties and method for manufacturing the same
    2.
    发明授权
    Non-oriented electrical steel sheets with excellent magnetic properties and method for manufacturing the same 有权
    磁性优异的无取向电工钢板及其制造方法

    公开(公告)号：US07846271B2

    公开(公告)日：2010-12-07

    申请号：US11792987

    申请日：2005-12-20

    申请人： Jae-Young Choi ,  Byung-Keun Bae ,  Jong-Tae Park ,  Jae-Kwan Kim ,  Chel-Min Park

    发明人： Jae-Young Choi ,  Byung-Keun Bae ,  Jong-Tae Park ,  Jae-Kwan Kim ,  Chel-Min Park

    IPC分类号： H01F1/147

    CPC分类号： C22C38/004 ,  C21D8/1205 ,  C21D8/1222 ,  C21D8/1233 ,  C21D8/1272 ,  C21D9/46 ,  C22C38/002 ,  C22C38/008 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/60 ,  H01F1/14791 ,  H01F1/16

    摘要： The present invention relates to technology for manufacturing electrical steel sheets having excellent magnetic properties through the control of a hot-rolled texture using the phase transformation of steel. More particularly, it relates to a non-oriented electrical steel sheet that has reduced iron loss and increased magnetic flux density by controlling alloy component elements and optimizing hot-rolling conditions, even though hot-rolled sheet annealing is not carried out, as well as a manufacturing method thereof. More specifically, the invention provides a non-oriented electrical steel sheet which has excellent magnetic properties while hot-rolled sheet annealing can be omitted, the steel sheet being comprised of 0.005 wt % or less of C, 1.0-3.0 w % of Si, 0.1-2.0 wt % of Mn, 0.1 wt % or less of P, 0.1-1.5 wt % of Al, and a remainder of Fe and other inevitable impurities, in which the relationship between the elements Mn and Al satisfies an equation of −0.2

    摘要翻译： 本发明涉及通过使用钢的相变控制热轧组织来制造具有优异磁性的电工钢板的技术。 更具体地，涉及一种无取向电工钢板，即使不进行热轧板退火，也可以通过控制合金成分元素并优化热轧条件而减少铁损和增加磁通密度，以及 其制造方法。 更具体地说，本发明提供一种磁性能优异的无取向电工钢板，可以省略热轧板退火，该钢板由C：0.005重量％以下，Si：1.0〜3.0重量％，Si： 0.1-2.0重量％的Mn，0.1重量％以下的P，0.1〜1.5重量％的Al，剩余的Fe和其他不可避免的杂质，其中元素Mn和Al之间的关系满足公式-0.2

    Chemical mechanical polishing pad with micro-mold and production method thereof
    6.
    发明申请
    Chemical mechanical polishing pad with micro-mold and production method thereof 审中-公开
    化学机械抛光垫用微型模具及其制造方法

    公开(公告)号：US20060068088A1

    公开(公告)日：2006-03-30

    申请号：US10952292

    申请日：2004-09-28

    申请人： Hae-Do Jeong ,  Jae-Young Choi ,  Hyoung-Jae Kim ,  Heon-Deok Seo ,  Boum-Young Park ,  Jae-Hong Park

    发明人： Hae-Do Jeong ,  Jae-Young Choi ,  Hyoung-Jae Kim ,  Heon-Deok Seo ,  Boum-Young Park ,  Jae-Hong Park

    IPC分类号： B28B7/38

    CPC分类号： B24B37/26 ,  B24D18/0009

    摘要： The present invention relates to a chemical mechanical polishing (CMP) pad with a micro-mold, and a production method thereof. More particularly, the present invention relates to a CMP pad with a micro-mold, in which the surface of the CMP pad is uniformly formed so as to avoid the glazing of the polishing pad, prevent a change in slurry flow and maintain the contact area between the polishing pad and a semiconductor wafer constant, thus allowing the wafer to be polished in a continuous and stable manner, and permitting the semiconductor wafer to be polished into the desired shape, as well as a production method thereof.

    摘要翻译： 本发明涉及具有微型模具的化学机械抛光（CMP）垫及其制造方法。 更具体地说，本发明涉及一种具有微模的CMP垫，其中CMP垫的表面均匀地形成，以避免抛光垫的上光，防止浆料流动的变化并保持接触面积 在抛光垫和半导体晶片之间恒定，从而允许晶片以连续且稳定的方式被抛光，并且允许半导体晶片被抛光成所需的形状，以及其制造方法。

    Gate structure, semiconductor memory device having the gate structure and methods of fabricating the same
    10.
    发明申请
    Gate structure, semiconductor memory device having the gate structure and methods of fabricating the same 审中-公开
    门结构，具有栅极结构的半导体存储器件及其制造方法

    公开(公告)号：US20100109074A1

    公开(公告)日：2010-05-06

    申请号：US12654029

    申请日：2009-12-08

    申请人： Kwang-Soo Seol ,  Byung-Kl Kim ,  Eun-Kyung Lee ,  Yo-Sep Min ,  Kyung-Sang Cho ,  Jae-Ho Lee ,  Jae-Young Choi

    发明人： Kwang-Soo Seol ,  Byung-Kl Kim ,  Eun-Kyung Lee ,  Yo-Sep Min ,  Kyung-Sang Cho ,  Jae-Ho Lee ,  Jae-Young Choi

    IPC分类号： H01L29/792

    CPC分类号： H01L29/42332 ,  B82Y10/00 ,  H01L29/40114 ,  H01L29/42348

    摘要： A gate structure using nanodots as a trap site, a semiconductor device having the gate structure and methods of fabricating the same are provided. The gate structure may include a tunneling layer, a plurality of nanodots on the tunneling layer, and a control insulating layer including a high-k dielectric layer on the tunneling layer and the nanodots. A semiconductor memory device may further include a semiconductor substrate, the gate structure according to example embodiments on the semiconductor substrate and a first impurity region and a second impurity region in the semiconductor substrate, wherein the gate structure is in contact with the first and second impurity regions.

    摘要翻译： 提供了使用纳米点作为陷阱位置的栅极结构，具有栅极结构的半导体器件及其制造方法。 栅极结构可以包括隧道层，隧道层上的多个纳米点，以及在隧道层和纳米点上包括高k电介质层的控制绝缘层。 半导体存储器件还可以包括半导体衬底，半导体衬底上的示例性实施例的栅极结构和半导体衬底中的第一杂质区和第二杂质区，其中栅极结构与第一和第二杂质接触 地区。