公开(公告)号：US20080073742A1

公开(公告)日：2008-03-27

申请号：US11943277

申请日：2007-11-20

申请人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Robert Leidy ,  Stephen Luce ,  Richard Rassell ,  Edmund Sprogis

发明人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Robert Leidy ,  Stephen Luce ,  Richard Rassell ,  Edmund Sprogis

IPC分类号： H01L31/00 ,  H01L21/98

CPC分类号： H01L27/14618 ,  H01L25/0657 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/13091 ,  H01L2924/15151 ,  H01L2924/00014 ,  H01L2924/00

摘要： An imaging system for use in a digital camera or cell phone utilizes one chip for logic and one chip for image processing. The chips are interconnected using around-the-edge or through via conductors extending from bond pads on the active surface of the imaging chip to backside metallurgy on the imaging chip. The backside metallurgy of the imaging chip is connected to metallurgy on the active surface of the logic chip using an array of solder bumps in BGA fashion. The interconnection arrangement provides a CSP which matches the space constraints of a cell phone, for example. The arrangement also utilizes minimal wire lengths for reduced noise. Connection of the CSP to a carrier package may be either by conductive through vias or wire bonding. The CSP is such that the imaging chip may readily be mounted across an aperture in the wall of a cell phone, for example, so as to expose the light sensitive pixels on the active surface of said imaging chip to light.

摘要翻译： 用于数码相机或手机的成像系统利用一个芯片用于逻辑和一个芯片用于图像处理。 这些芯片使用围绕成像芯片的有源表面上的接合焊盘的边缘或通孔导体互连，从而在成像芯片上进行背面冶金。 成像芯片的背面冶金采用BGA焊料凸块阵列与逻辑芯片的有源表面上的冶金连接。 互连装置提供例如与手机的空间限制相匹配的CSP。 该布置还利用最小的线长度来降低噪声。 将CSP连接到载体封装可以通过通孔或引线键合导电。 CSP使得成像芯片可以容易地安装在例如手机的壁中的孔之间，以便将所述成像芯片的有效表面上的光敏像素曝光到光。

公开(公告)号：US20060110905A1

公开(公告)日：2006-05-25

申请号：US10904677

申请日：2004-11-23

申请人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Richard Rassel ,  Edmund Sprogis

发明人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Richard Rassel ,  Edmund Sprogis

IPC分类号： H01L21/44 ,  H01L21/50

CPC分类号： H01L24/02 ,  H01L23/3114 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/3011 ,  H01L2924/00

摘要： A bond pad for effecting through-wafer connections to an integrated circuit or electronic package and method of producing thereof. The bond pad includes a high surface area aluminum bond pad in order to resultingly obtain a highly reliable, low resistance connection between bond pad and electrical leads.

摘要翻译： 用于实现通过晶片连接到集成电路或电子封装的接合焊盘及其制造方法。 接合焊盘包括高表面积铝键合焊盘，以便得到接合焊盘和电引线之间的高度可靠的低电阻连接。

公开(公告)号：US20060113622A1

公开(公告)日：2006-06-01

申请号：US10904807

申请日：2004-11-30

申请人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Robert Leidy ,  Anthony Stamper

发明人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Robert Leidy ,  Anthony Stamper

IPC分类号： H01L31/00

CPC分类号： H01L27/14685 ,  H01L21/76819 ,  H01L21/76834 ,  H01L21/76838 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14687

摘要： An image sensor array and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack with improved thickness uniformity to result in a pixel array exhibiting increased light sensitivity. In the sensor array, each Cu metallization level includes a Cu metal wire structure formed at locations between each array pixel and, a barrier material layer is formed on top each Cu metal wire structure that traverses the pixel optical path. By implementing a single mask or self-aligned mask methodology, a single etch is conducted to completely remove the interlevel dielectric and barrier layers that traverse the optical path. The etched opening is then refilled with dielectric material. Prior to depositing the refill dielectric, a layer of either reflective or absorptive material is formed along the sidewalls of the etched opening to improve sensitivity of the pixels by either reflecting light to the underlying photodiode or by eliminating light reflections.

摘要翻译： 一种图像传感器阵列和制造方法，其中传感器包括铜（Cu）金属化水平，允许结合更薄的层间电介质叠层，改进的厚度均匀性，以产生呈现增加的光敏度的像素阵列。 在传感器阵列中，每个Cu金属化层包括在每个阵列像素之间的位置处形成的Cu金属线结构，并且阻挡材料层形成在穿过像素光路的每个Cu金属线结构上。 通过实现单掩模或自对准掩模方法，进行单次蚀刻以完全去除穿过光路的层间电介质层和阻挡层。 然后将蚀刻的开口用电介质材料重新填充。 在沉积再充填电介质之前，沿蚀刻开口的侧壁形成反射或吸收材料层，以通过将光反射到下面的光电二极管或通过消除光反射来提高像素的灵敏度。

公开(公告)号：US20070187787A1

公开(公告)日：2007-08-16

申请号：US11276160

申请日：2006-02-16

申请人： Kristin Ackerson ,  James Adkisson ,  John Ellis-Monaghan ,  Jeffrey Gambino ,  Timothy Hoague ,  Mark Jaffe ,  Robert Leidy ,  Matthew Moon ,  Richard Passel

发明人： Kristin Ackerson ,  James Adkisson ,  John Ellis-Monaghan ,  Jeffrey Gambino ,  Timothy Hoague ,  Mark Jaffe ,  Robert Leidy ,  Matthew Moon ,  Richard Passel

IPC分类号： H01L27/14

CPC分类号： H01L27/14643 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

摘要： A pixel for an image sensor includes a photosensor located within a substrate. A patterned dielectric layer having an aperture registered with the photosensor is located over the substrate. A lens structure is located over the dielectric layer and also registered with the photosensor. A liner layer is located contiguously upon a top surface of the dielectric layer, and the sidewalls and bottom of the aperture. The liner layer provides for enhanced reflection for off-axis incoming light and enhanced capture thereof by the photosensor. When the aperture does not provide a dielectric layer border for a metallization layer embedded within the dielectric layer, an exposed edge of the metallization layer may be chamfered.

摘要翻译： 用于图像传感器的像素包括位于衬底内的光电传感器。 具有与光电传感器对准的孔径的图案化电介质层位于衬底上。 透镜结构位于电介质层上方并且还与光电传感器配准。 衬垫层连续地定位在电介质层的顶表面上，孔的侧壁和底部。 衬垫层为离轴入射光提供增强的反射，并且通过光电传感器增强其捕获。 当孔径不为嵌入在电介质层内的金属化层提供介电层边界时，金属化层的暴露边缘可以被倒角。

公开(公告)号：US20060138480A1

公开(公告)日：2006-06-29

申请号：US10905277

申请日：2004-12-23

申请人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Robert Leidy ,  Richard Rassel ,  Anthony Stamper

发明人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Robert Leidy ,  Richard Rassel ,  Anthony Stamper

IPC分类号： H01L31/113 ,  H01L31/0232 ,  H01L31/00

CPC分类号： H01L27/14636 ,  H01L21/76819 ,  H01L21/76834 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14683

摘要： An image sensor and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack to result in a pixel array exhibiting increased light sensitivity. The image sensor includes structures having a minimum thickness of barrier layer metal that traverses the optical path of each pixel in the sensor array or, that have portions of barrier layer metal selectively removed from the optical paths of each pixel, thereby minimizing reflectance. That is, by implementing various block or single mask methodologies, portions of the barrier layer metal are completely removed at locations of the optical path for each pixel in the array. In a further embodiment, the barrier metal layer may be formed atop the Cu metallization by a self-aligned deposition.

摘要翻译： 一种图像传感器和制造方法，其中传感器包括铜（Cu）金属化水平，允许结合较薄的层间电介质堆叠以产生呈现增加的光敏度的像素阵列。 图像传感器包括具有穿过传感器阵列中的每个像素的光路的阻挡层金属的最小厚度的结构，或者具有从每个像素的光路中选择性地去除的阻挡层金属的部分，从而使反射率最小化。 也就是说，通过实现各种块或单掩模方法，在阵列中的每个像素的光路的位置处完全去除了阻挡层金属的部分。 在另一个实施例中，阻挡金属层可以通过自对准沉积形成在Cu金属化之上。

公开(公告)号：US20080108170A1

公开(公告)日：2008-05-08

申请号：US11959841

申请日：2007-12-19

申请人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Robert Leidy ,  Richard Rassel ,  Anthony Stamper

发明人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Robert Leidy ,  Richard Rassel ,  Anthony Stamper

IPC分类号： H01L21/04

CPC分类号： H01L27/14636 ,  H01L21/76819 ,  H01L21/76834 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14683

摘要： A CMOS image sensor and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack to result in a pixel array exhibiting increased light sensitivity. The CMOS image sensor includes structures having a minimum thickness of barrier layer metal that traverses the optical path of each pixel in the sensor array or, that have portions of barrier layer metal selectively removed from the optical paths of each pixel, thereby minimizing reflectance. That is, by implementing various block or single mask methodologies, portions of the barrier layer metal are completely removed at locations of the optical path for each pixel in the array. In a further embodiment, the barrier metal layer may be formed atop the Cu metallization by a self-aligned deposition.

摘要翻译： CMOS图像传感器和制造方法，其中传感器包括铜（Cu）金属化水平，允许结合较薄的层间电介质堆叠以产生呈现增加的光灵敏度的像素阵列。 CMOS图像传感器包括具有穿过传感器阵列中的每个像素的光路的阻挡层金属的最小厚度的结构，或者具有从每个像素的光路中选择性地去除的阻挡层金属的部分，从而使反射率最小化的结构。 也就是说，通过实现各种块或单掩模方法，在阵列中的每个像素的光路的位置处完全去除了阻挡层金属的部分。 在另一个实施例中，阻挡金属层可以通过自对准沉积形成在Cu金属化之上。

公开(公告)号：US20070114622A1

公开(公告)日：2007-05-24

申请号：US11623977

申请日：2007-01-17

申请人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Robert Leidy ,  Anthony Stamper

发明人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Robert Leidy ,  Anthony Stamper

IPC分类号： H01L29/82

CPC分类号： H01L27/14685 ,  H01L21/76819 ,  H01L21/76834 ,  H01L21/76838 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14687

摘要： A CMOS image sensor array and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a inner interlevel dielectric stack with improved thickness uniformity to result in a pixel array exhibiting increased light sensitivity. In the sensor array, each Cu metallization level includes a Cu metal wire structure formed at locations between each array pixel and, a barrier material layer is formed on top each Cu metal wire structure that traverses the pixel optical path. By implementing a single mask or self-aligned mask methodology, a single etch is conducted to completely remove the interlevel dielectric and barrier layers that traverse the optical path. The etched opening is then refilled with dielectric material. Prior to depositing the refill dielectric, a layer of either reflective or absorptive material is formed along the sidewalls of the etched opening to improve sensitivity of the pixels by either reflecting light to the underlying photodiode or by eliminating light reflections.

摘要翻译： CMOS图像传感器阵列和制造方法，其中传感器包括铜（Cu）金属化水平，允许结合具有改进的厚度均匀性的内部层间电介质叠层，以产生呈现增加的光敏度的像素阵列。 在传感器阵列中，每个Cu金属化层包括在每个阵列像素之间的位置处形成的Cu金属线结构，并且阻挡材料层形成在穿过像素光路的每个Cu金属线结构上。 通过实现单掩模或自对准掩模方法，进行单次蚀刻以完全去除穿过光路的层间电介质层和阻挡层。 然后将蚀刻的开口用电介质材料重新填充。 在沉积再充填电介质之前，沿蚀刻开口的侧壁形成反射或吸收材料层，以通过将光反射到下面的光电二极管或通过消除光反射来提高像素的灵敏度。

公开(公告)号：US20070138380A1

公开(公告)日：2007-06-21

申请号：US11275171

申请日：2005-12-16

申请人： James Adkisson ,  Jeffrey Gambino ,  Robert Leidy ,  Richard Rassel

发明人： James Adkisson ,  Jeffrey Gambino ,  Robert Leidy ,  Richard Rassel

IPC分类号： G01J1/04

CPC分类号： G01J1/04 ,  G01J1/0407 ,  G01J1/0422 ,  G01J1/0488

摘要： A photo sensing structure and methods for forming the same. The structure includes (a) a semiconductor substrate and (b) a photo collection region on the semiconductor substrate. The structure also includes a funneled light pipe on top of the photo collection region. The funneled light pipe includes (i) a bottom cylindrical portion on top of the photo collection region of the photo collection region, and (ii) a funneled portion which has a tapered shape and is on top and in direct physical contact with the bottom cylindrical portion. The structure further includes a color filter region on top of the funneled light pipe.

摘要翻译： 感光结构及其形成方法。 该结构包括（a）半导体衬底和（b）半导体衬底上的光收集区域。 该结构还包括在照片收集区域顶部的漏斗光管。 漏斗式光管包括（i）照片收集区域的照片收集区域顶部的底部圆柱形部分，和（ii）具有锥形形状并且在顶部并与底部圆柱体直接物理接触的漏斗部分 一部分。 该结构还包括在漏斗的光管的顶部上的滤色器区域。

公开(公告)号：US20070145438A1

公开(公告)日：2007-06-28

申请号：US11681454

申请日：2007-03-02

申请人： James Adkisson ,  Andres Bryant ,  John Ellis-Monaghan ,  Jeffrey Gambino ,  Mark Jaffe ,  Jerome Lasky ,  Richard Phelps

发明人： James Adkisson ,  Andres Bryant ,  John Ellis-Monaghan ,  Jeffrey Gambino ,  Mark Jaffe ,  Jerome Lasky ,  Richard Phelps

IPC分类号： H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14609 ,  H01L31/0352

摘要： A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer caused by a pinning layer is reduced.

摘要翻译： 像素传感器单元结构及其制造方法。 像素单元包括与传输栅极结构的第一侧相邻形成的用于耦合收集阱区和沟道区的掺杂层。 减少了由钉扎层引起的对电荷转移的电势障碍干扰。

公开(公告)号：US20070102738A1

公开(公告)日：2007-05-10

申请号：US11164072

申请日：2005-11-09

申请人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe

发明人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe

IPC分类号： H01L31/113 ,  H01L31/062

CPC分类号： H01L27/14623 ,  H01L27/14685

摘要： The present invention provides a light shield for shielding the floating diffusion of a complementary metal-oxide semiconductor (CMOS) imager. In accordance with an embodiment of the present invention, there is provided a pixel sensor cell including: a device region formed on a substrate; and a first layer of material forming a sidewall adjacent to a side of the device region for blocking electromagnetic radiation from the device region.

摘要翻译： 本发明提供一种用于屏蔽互补金属氧化物半导体（CMOS）成像器的浮动扩散的遮光罩。 根据本发明的实施例，提供了一种像素传感器单元，包括：形成在基板上的器件区域; 以及形成与所述器件区域的一侧相邻的侧壁的第一材料层，用于阻挡来自所述器件区域的电磁辐射。