Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels
    3.
    发明授权
    Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels 有权
    利用次大气压气体供应船的自动切换气体输送系统

    公开(公告)号:US06302139B1

    公开(公告)日:2001-10-16

    申请号:US09356020

    申请日:1999-07-16

    申请人: James Dietz

    发明人: James Dietz

    IPC分类号: B08B9027

    摘要: An auto-switching sub-atmospheric pressure gas delivery system, for dispensing gas to a gas-consuming process unit, e.g., a semiconductor manufacturing tool. The gas delivery system uses a multiplicity of gas panels, wherein one panel is in active gas dispensing mode and supplying gas from a sub-atmospheric pressure gas source coupled to the flow circuitry of the panel. During the active gas dispensing operation in such panel, a second gas panel of the system undergoes purge, evacuation and fill transition to active gas dispensing condition, to permit switching to the second panel upon exhaustion of the sub-atmospheric pressure gas source coupled to the first gas panel without the occurrence of pressure spikes or flow perturbations.

    摘要翻译: 一种用于将气体分配到诸如半导体制造工具的耗气处理单元的自动切换次大气压气体输送系统。 气体输送系统使用多个气体面板,其中一个面板处于主动气体分配模式并且从耦合到面板的流动回路的次级大气压气体源供应气体。 在这种面板中的活性气体分配操作期间,系统的第二气体面板经过吹扫,排空和填充过渡到活性气体分配条件,以便在连接到 第一个气体面板,没有发生压力尖峰或流动扰动。

    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    4.
    发明申请
    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 有权
    半导体加工系统的清洁

    公开(公告)号:US20100154835A1

    公开(公告)日:2010-06-24

    申请号:US12298727

    申请日:2007-04-26

    IPC分类号: B08B5/00

    摘要: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    摘要翻译: 一种清洁残留物的方法和装置,用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物,将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时,气相反应性材料与残余物选择性反应,并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时,气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2,XeF 4,XeF 6,NF 3,IF 5,IF 7,SF 6,C 2 F 6,F 2,CF 4,KrF 2,Cl 2,HCl,ClF 3,ClO 2,N 2 F 4,N 2 F 2,N 3 F, ,NH2F,HOBr,Br2,C3F8,C4F8,C5F8,CHF3,CH2F2,CH3F,COF2,HF,C2HF5,C2H2F4,C2H3F3,C2H4F2,C2H5F,C3F6和有机氯化物,如COCl2,CCl4,CHCl3,CH2Cl2和CH3Cl。

    Method of and system for sub-atmospheric gas delivery with backflow
control
    6.
    发明授权
    Method of and system for sub-atmospheric gas delivery with backflow control 有权
    具有回流控制的亚气体输送方法和系统

    公开(公告)号:US6155289A

    公开(公告)日:2000-12-05

    申请号:US307650

    申请日:1999-05-07

    IPC分类号: G05D16/20 G05D7/06

    摘要: A sub-atmospheric gas delivery system (100) with a backflow control apparatus (10) for preventing backflow into the sub-atmospheric gas source (14). The gas delivery system includes three fluidly coupled sticks: a purge stick (120), a process gas delivery stick (124) and an evacuation stick (130). The backflow control apparatus comprises a gas line (26) fluidly coupling the sub-atmospheric gas source to a chamber (50), a valve (20) attached to the sub-atmospheric gas source for blocking fluid communication between the gas source and the gas line upon receipt of a first signal, a flow restrictor (R) in fluid communication with the gas line and positioned between the valve and the chamber, and first and second pressure transducers (P1 and P2) in fluid communication with the gas line and positioned on either side of the flow restrictor. Each transducer is capable of generating a signal representative of pressure. The backflow control apparatus further includes a valve controller unit (40) connected to the first and second pressure transducers and the valve. The controller is capable of generating the aforementioned first signal in response to the signals from the first and second pressure transducers.

    摘要翻译: 具有用于防止回流到次大气气体源(14)中的回流控制装置(10)的次大气气体输送系统(100)。 气体输送系统包括三个流体耦合的棒:吹扫棒(120),处理气体输送棒(124)和抽空棒(130)。 回流控制装置包括将副气氛气体源流体耦合到室(50)的气体管线(26),附接到次大气气体源的阀(20),用于阻止气源和气体之间的流体连通 在与气体管线流体连通并且位于阀和腔室之间流体连通的限流器(R)以及与气体管线流体连通并定位的第一和第二压力换能器(P1和P2) 在限流器的两侧。 每个换能器能够产生代表压力的信号。 回流控制装置还包括连接到第一和第二压力换能器和阀的阀控制器单元(40)。 控制器能够响应于来自第一和第二压力换能器的信号产生上述第一信号。

    In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration

    公开(公告)号:US20060237061A1

    公开(公告)日:2006-10-26

    申请号:US11453700

    申请日:2006-06-15

    申请人: Jose Arno James Dietz

    发明人: Jose Arno James Dietz

    IPC分类号: G05D11/13

    摘要: Apparatus and method for delivery of dilute active fluid, e.g., to a downstream active fluid-consuming process unit of a semiconductor manufacturing plant. The delivery system includes an active fluid source, a diluent fluid source, a fluid flow metering device for dispensing of the active fluid at a predetermined flow rate, a mixer arranged to mix active gas from the active fluid source that is dispensed at such predetermined flow rate by the fluid flow metering device, with diluent fluid to form a diluted active fluid mixture, and a monitor arranged to measure concentration of active fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device, to control the dispensing rate of the active fluid, and maintain a predetermined concentration of active fluid in the diluted active fluid mixture.

    Interchangeable CML/LVDS data transmission circuit
    9.
    发明授权
    Interchangeable CML/LVDS data transmission circuit 有权
    可交换CML / LVDS数据传输电路

    公开(公告)号:US06847232B2

    公开(公告)日:2005-01-25

    申请号:US10059987

    申请日:2002-01-29

    摘要: A system and method is described for a driver circuit used for high speed data transmission in LVDS and CML transceiver device applications. The transceivers are intended to receive a low voltage differential input signal and interchangeably drive a standard LVDS load with a TIA/EIA-644 compliant LVDS signal, and a standard CML load with a standard CML compatible signal. The driver circuit operates at speeds up to 1.36 Gbps, making it compatible with the OC-24 signaling rate for optical transmission. To accomplish this, the driver uses a mixed combination of voltage and current mode drive sections in the output circuit when coupled to LVDS loads, and when the driver is coupled to CML loads, operates purely in a current mode using only the current mode drive section. MOS transistors and a current source are used in the current mode switch portion to switch the drive with a constant current at the high speeds, and NPN transistors in the voltage mode output portion provide variable impedance for the output circuit. A common mode compensation circuit using a feedback voltage from the load generates a compensation signal for variable impedance control of the NPN transistors to yield a regulated voltage for the common mode dc voltage.

    摘要翻译: 描述了用于LVDS和CML收发器设备应用中用于高速数据传输的驱动器电路的系统和方法。 收发器旨在接收低电压差分输入信号,并可互换地使用符合TIA / EIA-644标准的LVDS信号驱动标准LVDS负载,以及具有标准CML兼容信号的标准CML负载。 驱动器电路的工作速度高达1.36 Gbps,使其与OC-24信号传输速率兼容。 为了实现这一点,驱动器在耦合到LVDS负载时使用输出电路中的电压和电流模式驱动部分的混合组合,并且当驱动器耦合到CML负载时,仅使用当前模式驱动部分 。 MOS晶体管和电流源用于电流模式开关部分,以高速度以恒定电流切换驱动器,并且电压模式输出部分中的NPN晶体管为输出电路提供可变阻抗。 使用来自负载的反馈电压的共模补偿电路产生用于NPN晶体管的可变阻抗控制的补偿信号,以产生用于共模直流电压的调节电压。

    Apparatus and method for inhibiting decomposition of germane
    10.
    发明授权
    Apparatus and method for inhibiting decomposition of germane 有权
    用于抑制锗烷分解的装置和方法

    公开(公告)号:US06716271B1

    公开(公告)日:2004-04-06

    申请号:US10282377

    申请日:2002-10-29

    IPC分类号: B01D5304

    摘要: A germane storage and dispensing system, in which germane gas is sorptively retained on an activated carbon sorbent medium in a vessel containing adsorbed and free germane gas. The activated carbon sorbent medium is deflagration-resistant in relation to the germane gas adsorbed thereon, i.e., under deflagration conditions of 65° C. and 650 torr, under which free germane gas undergoes deflagration, the activated carbon sorbent medium does not sustain deflagration of the adsorbed germane gas or thermally desorb the germane gas so that it undergoes subsequent deflagration. The deflagration-resistance of the activated carbon sorbent medium is promoted by pre-treatment of the sorbent material to remove extraneous sorbables therefrom and by maintaining the fill level of the sorbent medium in the gas storage and dispensing vessel at a substantial value, e.g., of at least 30%.

    摘要翻译: 锗烷存储和分配系统,其中将锗烷气体吸附保留在含有吸附和游离的锗烷气体的容器中的活性炭吸附剂介质上。 活性炭吸附剂介质相对于其上吸附的锗烷气体,即在65℃和650托的爆燃条件下,具有爆燃阻力,在此条件下,游离的锗烷气体经历爆燃,活性炭吸附剂介质不能保持爆燃 吸附的锗烷气体或热解吸锗烷气体,使其经历随后的爆燃。 通过预处理吸附剂材料来促进活性炭吸附剂介质的防爆性,以从其中除去外来的吸附物,并且通过将吸附剂介质在气体储存和分配容器中的填充水平保持在基本值,例如 至少30%。