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公开(公告)号：US06989172B2
公开(公告)日：2006-01-24
申请号：US10681515
申请日：2003-10-08
申请人： James P. DeYoung , James B. McClain , Stephen M. Gross , Doug Taylor , Mark I. Wagner , David Brainard
发明人： James P. DeYoung , James B. McClain , Stephen M. Gross , Doug Taylor , Mark I. Wagner , David Brainard
CPC分类号： H01L21/283 , B05D1/18 , B05D2401/90 , H01L21/28556 , H01L21/288 , H01L21/67028 , H01L28/65
摘要： A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.
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公开(公告)号：US06602351B2
公开(公告)日：2003-08-05
申请号：US09951247
申请日：2001-09-13
IPC分类号： B08B300
CPC分类号： B08B7/0021 , C23G5/00 , H01L21/02063 , Y10S134/902
摘要： A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water, entrained solutes, and/or solid particles or the like on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide cleaning composition, the drying composition comprising carbon dioxide and, optionally but preferably, a cleaning adjunct; (c) immersing the surface portion in the densified carbon dioxide cleaning composition; and then (d) removing the cleaning composition from the surface portion.
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公开(公告)号：US07141496B2
公开(公告)日：2006-11-28
申请号：US10762905
申请日：2004-01-22
申请人： James P. DeYoung , James B. McClain , Stephen M. Gross , Doug Taylor , Mark I. Wagner , David Brainard
发明人： James P. DeYoung , James B. McClain , Stephen M. Gross , Doug Taylor , Mark I. Wagner , David Brainard
IPC分类号： H01L21/44
CPC分类号： H01L21/32051 , H01L21/283 , H01L21/288 , H01L21/76814 , H01L21/76843 , H01L21/76871
摘要： A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.
摘要翻译： 一种处理半导体衬底的电介质表面部分的方法，包括以下步骤：（a）提供具有电介质表面部分的半导体衬底; 然后（b）用涂层试剂处理所述电介质表面部分，所述涂覆试剂包含与配位基团偶联的反应基团，所述配位基团与其结合金属，使得金属沉积在电介质表面部分上 产生用金属处理的表面部分。
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4.发明授权Methods for transferring supercritical fluids in microelectronic and other industrial processes 失效在微电子和其他工业过程中转移超临界流体的方法公开(公告)号：US06905555B2
公开(公告)日：2005-06-14
申请号：US10448474
申请日：2003-05-30
CPC分类号： B08B7/0021 , B05D1/18 , B05D2401/90 , H01L21/02063 , H01L21/02101 , H01L21/67017 , H01L21/67028 , Y10T137/0324
摘要： A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), with the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.
摘要翻译： 一种从压力容器（例如，在微电子制造过程中）置换超临界流体的方法，其步骤包括：提供包含第一超临界流体（所述超临界流体优选包含二氧化碳）的封闭压力容器; 向所述容器中加入第二流体（通常也是超临界流体），其中所述第二流体以大于第一超临界流体的压力的压力加入，并且所述第二流体的密度小于第一超临界流体的密度 ; 在所述第一超临界流体和所述第二流体之间形成界面; 并且使第二超临界流体的至少一部分与第二流体（优选流体）的压力从容器移位，同时保持其间的界面。
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公开(公告)号：US06613157B2
公开(公告)日：2003-09-02
申请号：US09951092
申请日：2001-09-13
IPC分类号： B08B300
CPC分类号： B08B7/0021 , C23G5/00 , H01L21/02063 , Y10S134/902 , Y10S438/906
摘要： A method of cleaning and removing solid particles during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide cleaning composition, the cleaning composition comprising carbon dioxide and a cleaning adjunct, the cleaning adjunct selected from the group consisting of cosolvents, surfactants, and combinations thereof; (c) immersing the surface portion in the densified carbon dioxide cleaning composition to remove solid particles from the surface portion; and then (d) removing the cleaning composition from the surface portion. Process parameters are controlled so that the cleaning composition is maintained as a homogeneous composition during the immersing step, the removing step, or both the immersing and removing step, without substantial deposition of the drying/cleaning adjunct or solid particles on the substrate.
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公开(公告)号：US07592035B2
公开(公告)日：2009-09-22
申请号：US11261299
申请日：2005-10-28
申请人： James P. DeYoung , James B. McClain , Stephen M. Gross , Doug Taylor , Mark I. Wagner , David Brainard
发明人： James P. DeYoung , James B. McClain , Stephen M. Gross , Doug Taylor , Mark I. Wagner , David Brainard
IPC分类号： B05D5/12
CPC分类号： H01L21/283 , B05D1/18 , B05D2401/90 , H01L21/28556 , H01L21/288 , H01L21/67028 , H01L28/65
摘要： A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.
摘要翻译： 涂覆基材的方法包括以下步骤：（a）在封闭容器中提供基材，所述基材具有表面部分; （b）用第一超临界流体至少部分地填充封闭的容器，使得所述第一超临界流体接触表面部分，第一超临界流体携带或包含涂层组分; 然后（c）向所述反应容器中加入单独的压缩气体气氛，使得在所述第一超临界流体和所述单独的压缩气体气氛之间形成边界，所述单独的压缩气体气氛的密度小于所述第一超临界流体; 然后（d）通过将所述单独的压缩气体气氛继续加入到所述容器中，使所述边界移动穿过所述表面部分并且将涂层组分的薄膜沉积在所述微电子衬底上，从而使所述第一超临界流体从所述容器移位。
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公开(公告)号：US07044143B2
公开(公告)日：2006-05-16
申请号：US10259066
申请日：2002-09-27
IPC分类号： B08B3/10
CPC分类号： D06F43/007 , B08B7/0021 , D06F43/005 , D06F43/08
摘要： Microelectronic substrate processing systems include a microelectronic substrate processing chamber that is configured to contain therein at least one microelectronic substrate. A carbon dioxide supply system is configured to supply densified carbon dioxide to the microelectronic substrate processing chamber. A detergent supply system is configured to supply detergent to the microelectronic substrate processing chamber.
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8.发明授权Compositions of transition metal species in dense phase carbon dioxide and methods of use thereof 失效密相二氧化碳中过渡金属物质的组成及其使用方法公开(公告)号：US06953041B2
公开(公告)日：2005-10-11
申请号：US10267276
申请日：2002-10-09
IPC分类号： C23F1/10 , H01L21/306 , H01L21/311 , H01L21/3205 , H01L21/3213 , B08B6/00 , C25F1/00
CPC分类号： C23F1/10 , H01L21/02052 , H01L21/31116 , H01L21/32051 , H01L21/32134
摘要： Compositions useful for cleaning metal from a substrate or coating metal onto a substrate are described: Such compositions comprise (a) a densified carbon dioxide continuous phase; (b) a polar discrete phase in said carbon dioxide continuous phase; (c) a metal in said discrete phase (i.e., a metal removed from the substrate, or to be coated onto the substrate); (d) at least one ligand in said continuous phase, said discrete phase, or both said continuous and said discrete phase.
摘要翻译： 描述了用于从基材或涂覆金属清洗金属到基底上的组合物：这样的组合物包含（a）致密化的二氧化碳连续相; （b）所述二氧化碳连续相中的极性离散相; （c）所述离散相中的金属（即，从基底去除或要涂覆在基底上的金属）; （d）所述连续相中的至少一种配体，所述离散相或所述连续和所述离散相两者。
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9.发明授权Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide 失效在二氧化碳中蚀刻清洁微电子衬底的方法和组合物公开(公告)号：US06669785B2
公开(公告)日：2003-12-30
申请号：US10146617
申请日：2002-05-15
IPC分类号： C23G102
CPC分类号： C11D7/08 , B08B7/0021 , C11D7/02 , C11D11/0047 , H01L21/31116 , H01L21/31133
摘要： A method of cleaning a microelectronic substrate is carried out by providing a cleaning fluid, the cleaning fluid comprising an adduct of hydrogen fluoride with a Lewis base in a carbon dioxide solvent; and then cleaning the substrate by contacting the substrate to the cleaning fluid for a time sufficient to clean the substrate.
摘要翻译： 清洁微电子基板的方法是通过提供一种清洗流体来进行的，该清洗流体包括氟化氢与路易斯碱在二氧化碳溶剂中的加合物; 然后通过使衬底与清洁流体接触足以清洁衬底的时间来清洁衬底。
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10.发明授权Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide 有权使用液体或超临界二氧化碳清洗和干燥微电子结构的方法公开(公告)号：US06562146B1
公开(公告)日：2003-05-13
申请号：US09932063
申请日：2001-08-17
IPC分类号： B08B300
CPC分类号： C23G5/00 , B08B7/0021 , H01L21/02063 , Y10S134/902 , Y10S438/906
摘要： A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide drying composition, the drying composition comprising carbon dioxide and a drying adjunct, the drying adjunct selected from the group consisting of cosolvents, surfactants, and combinations thereof; (c) immersing the surface portion in the densified carbon dioxide drying composition; and then (d) removing the drying composition from the surface portion. Process parameters are controlled so that the drying composition is maintained as a homogeneous composition during the immersing step, the removing step, or both the immersing and removing step, without substantial deposition of the drying/cleaning adjunct or entrained solutes on the substrate.
摘要翻译： 一种在制造过程中从诸如抗蚀剂涂覆半导体衬底，MEM器件或光电器件的微电子器件清洗和除去水和夹带溶质的方法，包括以下步骤：（a）提供部分制造的集成电路， MEM的装置或在基板上具有水和夹带溶质的光电装置; （b）提供致密化（例如液体或超临界）二氧化碳干燥组合物，所述干燥组合物包含二氧化碳和干燥助剂，所述干燥助剂选自助溶剂，表面活性剂及其组合; （c）将表面部分浸入致密二氧化碳干燥组合物中; 然后（d）从表面部分除去干燥组合物。 控制工艺参数，使得干燥组合物在浸渍步骤，去除步骤或浸渍和除去步骤期间保持为均匀的组合物，而基本上不沉积干燥/清洁助剂或夹带的溶质。
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